# Fast / Ultrafast Diode, 200 V, 1 A, Single, 930 mV, 25 ns, 35 A ![Product image](https://novapart.co/image/farnell:3774913RL/) **URL**: https://novapart.co/products/VS-1EFH02HM3/I/fast-ultrafast-diode-200-v-1-a-single-930-mv-25-ns **SKU**: VS-1EFH02HM3/I **Manufacturer**: VISHAY **Category**: Semiconductors - Discretes || Diodes & Rectifiers || Fast & Ultrafast Recovery Rectifier Diodes **Price**: €0.1050 **Stock**: 1000+ **Lead Time**: 134 days (indicative) ## Specifications | Parameter | Value | |---|---| | Svhc | Lead (04-Feb-2026) | | No. Of Pins | 2 Pin | | Product Range | FRED Pt Series | | Qualification | AEC-Q101 | | Diode Case Style | DO-219AB (SMF) | | Diode Configuration | Single | | Forward Voltage Max | 930mV | | Forward Surge Current | 35A | | Reverse Recovery Time | 25ns | | Average Forward Current | 1A | | Operating Temperature Max | 175°C | | Repetitive Peak Reverse Voltage | 200V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3774913RL/) **VS-1EFH02HM3** www.vishay.com ## Vishay Semiconductors ## **Hyperfast Rectifier, 1 A FRED Pt[®]** **==> picture [120 x 128] intentionally omitted <==** **----- Start of picture text -----**
eSMP [®] Series
.
Top view Bottom view
SMF (DO-219AB)
Cathode Anode
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## **FEATURES** - Hyperfast recovery time, reduced Qrr, and soft recovery - 175 °C maximum operating junction temperature - Specified for output and snubber operation - Low forward voltage drop - Low leakage current - Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C - Wave and reflow solderable - Compatible to SOD-123W package case outline - AEC-Q101 qualified, meets JESD 201 class 2 whisker test ## **LINKS TO ADDITIONAL RESOURCES** 3D Models ## **PRIMARY CHARACTERISTICS** |**PRIMARY CHARACTERISTICS**|**PRIMARY CHARACTERISTICS**| |---|---| |IF(AV)|1 A| |VR|200 V| |VFat IF(typ. 125 °C)|0.74 V| |trr|25 ns| |TJmax.|175 °C| |Package|SMF (DO-219AB)| |Circuit configuration|Single| - Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 ## **DESCRIPTION / APPLICATIONS** State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop and hyperfast recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness, and reliability characteristics. These devices are intended for use in snubber boost, lighting, piezo-injection, as high frequency rectifiers, and freewheeling diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce power dissipation in the switching element. ## **MECHANICAL DATA** **Case:** SMF (DO-219AB) Molding compound meets UL 94 V-0 flammability rating Halogen-free, RoHS-compliant **Terminals:** matte tin plated leads, solderable per J-STD-002 **Polarity:** color band denotes cathode end |**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**| |---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**VALUES**|**UNITS**| |Peak repetitive reverse voltage|VRRM||200|V| |Average rectified forward current|IF(AV)|TC= 160 °C(1)|1|A| |Non-repetitive peak surge current|IFSM|TJ= 25 °C|35|| |Operatingjunction and storage temperature range|TJ, TStg||-65 to +175|°C| ## **Note** - (1) Device on PCB with 8 mm x 16 mm soldering lands Revision: 30-Apr-2025 Document Number: 95786 **1** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **VS-1EFH02HM3** www.vishay.com ## Vishay Semiconductors ## **ELECTRICAL SPECIFICATIONS** (TJ = 25 °C unless otherwise specified) |**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)| |---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNITS**| |Breakdown voltage, blockingvoltage|VBR, VR|IR= 100 μA|200|-|-|V| |Forward voltage|VF|IF= 1 A|-|0.87|0.93|| |||IF= 1 A, TJ= 125 °C|-|0.74|0.8|| |Reverse leakage current|IR|VR= VRrated|-|-|2|μA| |||TJ= 125 °C, VR= VRrated|-|1|8|| |Junction capacitance|CT|VR= 200 V|-|5|-|pF| ## **DYNAMIC RECOVERY CHARACTERISTICS** (TJ = 25 °C unless otherwise specified) |**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise specified)| |---|---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**MIN.**|**TYP.**|**MAX.**|**UNITS**| |Reverse recovery time|trr|IF= 1 A, dIF/dt = 50 A/μs, VR= 30 V||-|24|-|ns| |||IF= 0.5 A, IR= 1 A, Irr= 0.25 A||-|-|25|| |||TJ= 25 °C|IF= 1 A
dIF/dt = 200 A/μs
VR= 160 V|-|16|-|| |||TJ= 125 °C||-|23|-|| |Peak recovery current|IRRM|TJ= 25 °C||-|1.6|-|A| |||TJ= 125 °C||-|2.5|-|| |Reverse recovery charge|Qrr|TJ= 25 °C||-|13|-|nC| |||TJ= 125 °C||-|30|-|| ## **THERMAL - MECHANICAL SPECIFICATIONS** |**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**| |---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNITS**| |Maximum junction and storage
temperature range|TJ, TStg||-65|-|+175|°C| |Thermal resistance, junction to mount|RthJM|Device mounted on PCB with 8 mm x 16 mm
soldering lands|-|-|17|°C/W| |Thermal resistance, junction to ambient|RthJA|Device mounted on PCB with 2 mm x 3.5 mm
solderinglands|-|-|140|°C/W| |Approximate weight|||0.015|||g| ||||0.0005|||oz.| |Markingdevice||Case style SMF (DO-219AB)|MDH|||| **==> picture [203 x 164] intentionally omitted <==** **----- Start of picture text -----**
100
10 TJ = 175 ° C
TJ = 150 °C
1 TJ = 125 °C
T J = 25 °C
T J = -40 °C
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
VF - Forward Voltage Drop (V)
- Instantaneous Forward Current (A)
IF
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Fig. 1 - Typical Forward Voltage Drop Characteristics **==> picture [230 x 182] intentionally omitted <==** **----- Start of picture text -----**
100
175 °C
10
150 °C
1 125 °C
0.1
0.01
25 °C
0.001
0 50 100 150 200
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
- Reverse Current (µA)
IR
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Revision: 30-Apr-2025 Document Number: 95786 **2** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **VS-1EFH02HM3** **==> picture [77 x 10] intentionally omitted <==** **----- Start of picture text -----**
www.vishay.com
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## Vishay Semiconductors **==> picture [204 x 149] intentionally omitted <==** **----- Start of picture text -----**
100
10
1
0 50 100 150 200
- Junction Capacitance (pF)
T
C
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**==> picture [92 x 9] intentionally omitted <==** **----- Start of picture text -----**
VR - Reverse Voltage (V)
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Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage **==> picture [202 x 148] intentionally omitted <==** **----- Start of picture text -----**
1.25
RMS limit
1
0.75
D = 0.02
0.5 D = 0.05
D = 0.1
D = 0.2
0.25 D = 0.5
DC
0
0 0.25 0.5 0.75 1 1.25 1.5
Average Power Loss (W)
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**==> picture [136 x 10] intentionally omitted <==** **----- Start of picture text -----**
IF(AV) - Average Forward Current (A)
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Fig. 5 - Forward Power Loss Characteristics **==> picture [472 x 166] intentionally omitted <==** **----- Start of picture text -----**
180 35
175 30
170 25
DC 125 °C
165 20
160 15 25 °C
Square wave (D = 0.50)
155 80 % rated VR applied 10
See note [(1)]
150 5
0 0.2 0.4 0.6 0.8 1 1.2 100 1000
IF(AV) - Average Forward Current (A) dIF/dt (A/µs)
C)
°
(ns)
trr
Allowable Case Temperature (
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Fig. 4 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Typical Reverse Recovery Time vs. dIF/dt **==> picture [506 x 224] intentionally omitted <==** **----- Start of picture text -----**
40
35
125 °C
30
25
20
25 °C
15
10
100 1000
dIF/dt (A/µs)
Fig. 7 - Typical Stored Charge vs. dIF/dt
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR
(nC)
rr
Q
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**==> picture [19 x 7] intentionally omitted <==** **----- Start of picture text -----**
Note
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Revision: 30-Apr-2025 **3** Document Number: 95786 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **VS-1EFH02HM3** www.vishay.com ## Vishay Semiconductors **==> picture [272 x 220] intentionally omitted <==** **----- Start of picture text -----**
(3)
IF trr
ta tb
0
(4)
Qrr
(2)
IRRM 0.5 IRRM
di(rec)M/dt (5)
0.75 IRRM
(1) diF/dt
(1) diF/dt - rate of change of current (4) Qrr - area under curve defined by trr
through zero crossing and IRRM
(2) IRRM - peak reverse recovery current Qrr = t 2rr x IRRM
(3) t from zero crossing point of negative rr - reverse recovery time measured (5) di(rec)M/dt - peak rate of change of
going IF to point where a line passing current during tb portion of trr
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
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Fig. 8 - Reverse Recovery Waveform and Definitions ## **ORDERING INFORMATION TABLE** |**Device code**|**VS-**|**VS-**||**1**
**E**
**F**
**H**|**1**
**E**
**F**
**H**|**02**|**H**|**M3**|| |---|---|---|---|---|---|---|---|---|---| |||**1**||**5**
**3**
**2**
**4**||**6**|**7**|**8**|| ||**1**||-||Vishay Semiconductors product||||| ||**2**||-||Current rating (1 = 1 A)||||| ||**3**||-||Circuit confguration:||||| ||||||E = single diode||||| ||**4**||-||F = SMF package||||| ||**5**||-||Process type,||||| ||||||H = hyperfast recovery||||| ||**6**||-||Voltage code (02 = 200 V)||||| ||**7**||-||H = AEC-Q101 qualifed||||| ||**8**||-||M3 = halogen-free, RoHS-compliant, and|||terminations lead (Pb)-free|| |**ORDERING INFORMATION** (Example)|**ORDERING INFORMATION** (Example)|**ORDERING INFORMATION** (Example)|**ORDERING INFORMATION** (Example)|**ORDERING INFORMATION** (Example)| |---|---|---|---|---| |**PREFERRED P/N**|**QUANTITY PER REEL**|**MINIMUM ORDER QUANTITY**||**PACKAGING DESCRIPTION**| |VS-1EFH02HM3/I|10 000|10 000||13"diameter plastic tape and reel| |||||| |**LINKS TO RELATED DOCUMENTS**||||| |Dimensions|||www.vishay.com/doc?95572|| |Part marking information|||www.vishay.com/doc?95618|| |Packaginginformation|||www.vishay.com/doc?95577|| |SPICE model|||www.vishay.com/doc?96012|| Revision: 30-Apr-2025 **4** Document Number: 95786 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Outline Dimensions** **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## Vishay Semiconductors ## **SMF (DO-219AB)** ## **DIMENSIONS** in millimeters (inches) **==> picture [315 x 453] intentionally omitted <==** **----- Start of picture text -----**
0.85 (0.033)
0.35 (0.014)
Detail Z
enlarged
1.08 (0.043)
2.9 (0.114)
0.88 (0.035)
2.7 (0.106)
3.9 (0.154)
3.5 (0.138)
Foot print recommendation:
1.3 (0.051) 1.3 (0.051)
2.9 (0.114)
5
5
0.25 (0.010) 0.10 (0.003) 0.1 (0.004) 0 (0.000)
1.2 (0.047) 0.8 (0.031)
1.9 (0.075) 1.7 (0.067)
1.4 (0.055)
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Created - Date: 15. February 2005 Rev. 3 - Date: 13. March 2007 Document no.:S8-V-3915.01-001 (4) 17247 Revision: 16-Apr-18 Document Number: 95572 **1** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Legal Disclaimer Notice** Vishay www.vishay.com ## **Disclaimer** ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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