# THYRISTOR, 285A, 1000V, TO-93

![Product image](https://novapart.co/image/farnell:9104623/)

**URL**: https://novapart.co/products/VS-181RKI100PBF/thyristor-285a-1000v-to-93
**SKU**: VS-181RKI100PBF
**Manufacturer**: VISHAY
**Category**: Semiconductors - Discretes || Thyristors || Thyristors - SCR Modules
**Price**: €32.6900
**Stock**: 10+

## Description

SCR Module Type:Single SCR; Peak Repetitive Off-State Voltage, Vdrm:1kV; Gate Trigger Current Max, Igt:150mA; Current It av:180A; On State RMS Current IT(rms):285A; Peak Non Rep Surge Curre

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (17-Dec-2014) |
| No. Of Pins | - |
| Product Range | - |
| Scr Module Type | Single SCR |
| Thyristor Mounting | Stud Mount |
| On State Rms Current | 285A |
| Thyristor Case Style | TO-209AB |
| Average Forward Current | 180A |
| Gate Trigger Current Max | 150mA |
| Gate Trigger Voltage Max | 2.5V |
| Operating Temperature Max | 125°C |
| Repetitive Peak Reverse Voltage | 1kV |
| Peak Repetitive Off State Voltage | 1kV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:9104623/)

## **VS-180RKI...PbF, VS-181RKI...PbF Series** 

www.vishay.com 

## Vishay Semiconductors 

# **Phase Control Thyristors (Stud Version), 180 A** 

## **FEATURES** 

- Hermetic glass-metal seal 

- International standard case TO-209AB (TO-93) 

- Designed and qualified for industrial level 

- Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 

**TO-209AB (TO-93)** 

## **TYPICAL APPLICATIONS** 

- DC motor controls 

## **PRODUCT SUMMARY** 

|**PRODUCT SUMMARY**|**PRODUCT SUMMARY**|
|---|---|
|IT(AV)|180 A|
|VDRM/VRRM|400 V, 800 V, 1000 V|
|VTM|1.35 V|
|IGT|65 mA|
|TJ|-40 °C to 125 °C|
|Package|TO-209AB (TO-93)|
|Diode variation|Single SCR|



- Controlled DC power supplies 

- AC controllers 

## **MAJOR RATINGS AND CHARACTERISTICS** 

|**MAJOR RATINGS AND CHARACTERISTICS**|**MAJOR RATINGS AND CHARACTERISTICS**|**MAJOR RATINGS AND CHARACTERISTICS**|**MAJOR RATINGS AND CHARACTERISTICS**|
|---|---|---|---|
|**PARAMETER**|**TEST CONDITIONS**|**VALUES**|**UNITS**|
|IT(AV)||180|A|
||TC|80|°C|
|IT(RMS)||285|A|
|ITSM|50 Hz|3800||
||60 Hz|4000||
|I2t|50 Hz|72|kA2s|
||60 Hz|66||
|VDRM/VRRM||400 to 1000|V|
|tq|Typical|100|μs|
|TJ||-40 to 125|°C|



## **ELECTRICAL SPECIFICATIONS** 

## **VOLTAGE RATINGS** 

|**VOLTAGE RATINGS**|**VOLTAGE RATINGS**|**VOLTAGE RATINGS**|**VOLTAGE RATINGS**|**VOLTAGE RATINGS**|
|---|---|---|---|---|
|**PART NUMBER**|**VOLTAGE**<br>**CODE**|**VDRM/VRRM, MAXIMUM REPETITIVE**<br>**PEAK AND OFF-STATE VOLTAGE**<br>**V**|**VRSM, MAXIMUM NON-REPETITIVE**<br>**PEAK VOLTAGE**<br>**V**|**IDRM/IRRM MAXIMUM**<br>**AT TJ = TJ MAXIMUM**<br>**mA**|
|VS-180RKI<br>VS-181RKI|40|400|500|30|
||80|800|900||
||100|1000|1100||



Revision: 11-Mar-14 

Document Number: 94382 

**1** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-180RKI...PbF, VS-181RKI...PbF Series** 

Vishay Semiconductors 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**||||||
|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|||**VALUES**|**UNITS**|
|Maximum average on-state current<br>at case temperature|IT(AV)|180° conduction, half sine wave|||180|A|
||||||80|°C|
|Maximum RMS on-state current|IRMS|DC at 79 °C case temperature|||285|A|
|Maximum peak, one-cycle<br>non-repetitive surge current|ITSM|t = 10 ms|No voltage<br>reapplied|Sinusoidal half wave,<br>intial TJ= TJmaximum|3800||
|||t = 8.3 ms|||4000||
|||t = 10 ms|100 % VRRM<br>reapplied||3500||
|||t = 8.3 ms|||3660||
|Maximum I2t for fusing|I2t|t = 10 ms|No voltage<br>reapplied||72|kA2s|
|||t = 8.3 ms|||66||
|||t = 10 ms|100 % VRRM<br>reapplied||61||
|||t = 8.3 ms|||56||
|Maximum I2t for fusing|I2t|t = 0.1 ms to 10 ms, no voltage reapplied|||720|kA2s|
|Low level value of threshold voltage|VT(TO)1|(16.7 % xx IT(AV)< I <x IT(AV)), TJ= TJmaximum|||0.83|V|
|High level value of threshold voltage|VT(TO)2|(I >x IT(AV)), TJ= TJmaximum|||0.89||
|Low level value of on-state slope resistance|rt1|(16.7 % xx IT(AV)< I <x IT(AV)), TJ= TJmaximum|||0.92|m|
|High level value of on-state slope resistance|rt2|(I >x IT(AV)), TJ= TJmaximum|||0.81||
|Maximum on-state voltage|VTM|Ipk= 570 A, TJ= TJmaximum, tp= 10 ms sine pulse|||1.35|V|
|Maximum holding current|IH|TJ= 25 °C, anode supply 12 V resistive load|||600|mA|
|Typical latching current|IL||||1000||



|**SWITCHING**|**SWITCHING**|**SWITCHING**|**SWITCHING**|**SWITCHING**|
|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**VALUES**|**UNITS**|
|Maximum non-repetitive rate of<br>rise of turned-on current|dI/dt|Gate drive 20 V, 20, tr 1 μs<br>TJ= TJmaximum, anode voltage80 % VDRM|300|A/μs|
|Typical delay time|td|Gate current 1 A, dIg/dt = 1 A/μs<br>Vd= 0.67 % VDRM, TJ= 25 °C|1.0|μs|
|Typical turn-off time|tq|ITM= 50 A, TJ= TJmaximum, dI/dt = 10 A/μs,<br>VR= 100 V, dV/dt = 20 V/μs|100||



|**BLOCKING**|**BLOCKING**|**BLOCKING**|**BLOCKING**|**BLOCKING**|
|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**VALUES**|**UNITS**|
|Maximum critical rate of<br>rise of off-state voltage|dV/dt|TJ= TJmaximum linear to 80 % rated VDRM|500|V/μs|
|Maximum peak reverse and<br>off-state leakage current|IRRM,<br>IDRM|TJ= TJmaximum rated VDRM/VRRMapplied|30|mA|



Revision: 11-Mar-14 

Document Number: 94382 

**2** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

## **VS-180RKI...PbF, VS-181RKI...PbF Series** 

## Vishay Semiconductors 

## **TRIGGERING** 

|**TRIGGERING**|**TRIGGERING**|**TRIGGERING**|**TRIGGERING**|**TRIGGERING**|**TRIGGERING**|**TRIGGERING**|
|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**VALUES**||**UNITS**|
|||||**TYP.**|**MAX.**||
|Maximum peak gate power|PGM|TJ= TJmaximum, tp 5 ms||10||W|
|Maximum average gate power|PG(AV)|TJ= TJmaximum, f = 50 Hz, d% = 50||2.0|||
|Maximum peak positive gate current|IGM|TJ= TJmaximum, tp5 ms||3.0||A|
|Maximum peak positive gate voltage|+ VGM|||20||V|
|Maximum peak negative gate voltage|- VGM|||5.0|||
|DC gate current required to trigger|IGT|TJ= - 40 °C|Maximum required gate trigger/<br>current/voltage are the lowest<br>value which will trigger all units<br>12 V anode to cathode applied|130|-|mA|
|||TJ= 25 °C||65|150||
|||TJ= 125 °C||35|-||
|DC gate voltage required to trigger|VGT|TJ= - 40 °C||2.0|-|V|
|||TJ= 25 °C||1.2|2.5||
|||TJ= 125 °C||0.9|-||
|DC gate current not to trigger|IGD|TJ= TJmaximum|Maximum gate current/voltage not<br>to trigger is the maximum value<br>which will not trigger any unit with<br>rated VDRManode to cathode<br>applied|10||mA|
|DC gate voltage not to trigger|VGD|||0.25||V|



## **THERMAL AND MECHANICAL SPECIFICATIONS** 

|**THERMAL AND MECHANICAL SPECIFICATIONS**|**THERMAL AND MECHANICAL SPECIFICATIONS**|**THERMAL AND MECHANICAL SPECIFICATIONS**|**THERMAL AND MECHANICAL SPECIFICATIONS**|**THERMAL AND MECHANICAL SPECIFICATIONS**|
|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**VALUES**|**UNITS**|
|Maximum operating junction<br>temperature range|TJ||-40 to 125|°C|
|Maximum storage temperature range|TStg||-40 to 150||
|Maximum thermal resistance,<br>junction to case|RthJC|DC operation|0.15|K/W|
|Maximum thermal resistance,<br>junction to ambient|RthCS|Mounting surface, smooth, flat and greased|0.04||
|Mounting force, ± 10 %||Non-lubricated threads|31<br>(275)|N · m<br>(lbf · in)|
|||Lubricated threads|24.5<br>(210)||
|Approximate weight|||280|g|
|Case style||See dimensions - link at the end of datasheet|TO-209AB (TO-93)||



##  **RthJC CONDUCTION** 

|**RthJC CONDUCTION**|**RthJC CONDUCTION**|**RthJC CONDUCTION**|**RthJC CONDUCTION**|**RthJC CONDUCTION**|
|---|---|---|---|---|
|**CONDUCTION ANGLE**|**SINUSOIDAL CONDUCTION**|**RECTANGULAR CONDUCTION**|**TEST CONDITIONS**|**UNITS**|
|180°|0.050|0.032|TJ= TJmaximum|K/W|
|120°|0.063|0.059|||
|90°|0.080|0.082|||
|60°|0.118|0.124|||
|30°|0.225|0.228|||



## **Note** 

- The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC 

Revision: 11-Mar-14 

Document Number: 94382 

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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-180RKI...PbF, VS-181RKI...PbF Series** 

**==> picture [59 x 48] intentionally omitted <==**

## www.vishay.com 

## Vishay Semiconductors 

**==> picture [204 x 165] intentionally omitted <==**

**----- Start of picture text -----**<br>
130<br>R thJC  (DC) = 0.15 K/W<br>120<br>110<br>Ø<br>Conduction angle<br>100<br>90<br>80 30° 60°<br>120°<br>90° 180°<br>70<br>0 20 40 60 80 100 120 140 160 180 200<br>94382_01 Average On-State Current (A)<br>Temperature (°C)<br>Maximum Allowable Case<br>**----- End of picture text -----**<br>


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130<br>R thJC  (DC) = 0.15 K/W<br>120<br>110<br>Ø<br>Conduction period<br>100<br>90 30° DC<br>80<br>60° 120°<br>180°<br>90°<br>70<br>0 50 100 150 200 250 300<br>94382_02 Average On-State Current (A)<br> Fig. 2 - Current Ratings Characteristics<br>240<br>220<br>200<br>180<br>160<br>140<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>0 25 50 75 100 125<br>94382_03b Maximum Allowable<br>Ambient Temperature (°C)<br>350<br>300<br>250<br>200<br>150<br>100<br>50<br>0<br>0 25 50 75 100 125<br>94382_04b Maximum Allowable<br>Ambient Temperature (°C)<br>2 K/W<br>1.5 K/W<br>2 K/W<br>1 K/W 0.8 K/W<br>1.5 K/W<br>0.6 K/W<br>1 K/W<br>0.8 K/W<br>0.6 K/W<br>0.3 K/W<br>0.2 K/W<br>0.3 K/W<br>0.2 K/W<br>R<br>thSA<br> = 0.1 K/W -<br>ΔR<br>R<br>thSA<br> = 0.1 K/W -<br>Δ<br>R<br>Temperature (°C)<br>Maximum Allowable Case<br>Power Loss (W)<br>Maximum Average On-State<br>Power Loss (W)<br>Maximum Average On-State<br>**----- End of picture text -----**<br>


Fig. 1 - Current Ratings Characteristics 

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**----- Start of picture text -----**<br>
240<br>220<br>200 180°<br>180 120°<br>160 90°<br>60°<br>140 30° RMS limit<br>120<br>100<br>80<br>60<br>Ø<br>40 Conduction angle<br>20 TJ = 125 °C<br>0<br>0 20 40 60 80 100 120 140 160 180<br>94382_03a Average On-State Current (A)<br>Power Loss (W)<br>Maximum Average On-State<br>**----- End of picture text -----**<br>


Fig. 3 - On-State Power Loss Characteristics 

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**----- Start of picture text -----**<br>
350<br>300 DC<br>180°<br>120°<br>250<br>90°<br>60°<br>200 30° RMS limit<br>150<br>100<br>Ø<br>Conduction period<br>50<br>TJ = 125 °C<br>0<br>0 50 100 150 200 250 300<br>94382_04a Average On-State Current (A)<br>Power Loss (W)<br>Maximum Average On-State<br>**----- End of picture text -----**<br>


Fig. 4 - On-State Power Loss Characteristics 

Revision: 11-Mar-14 

Document Number: 94382 

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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

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**==> picture [59 x 48] intentionally omitted <==**

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## Vishay Semiconductors 

**==> picture [204 x 174] intentionally omitted <==**

**----- Start of picture text -----**<br>
4000<br>At any rated load condition and with<br>rated VRRM applied following surge.<br>3500 Initial T J  = 125 °C<br>at 60 Hz 0.0083 s<br>at 50 Hz 0.0100 s<br>3000<br>2500<br>2000<br>1500<br>1 10 100<br>94382_05 Number of Equal Amplitude Half<br>Cycle Current Pulses (N)<br>Peak Half Sine Wave  On-State Current (A)<br>**----- End of picture text -----**<br>


Fig. 5 - Maximum Non-Repetitive Surge Current 

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**----- Start of picture text -----**<br>
4000<br>Maximum non-repetitive surge current<br>versus pulse train duration. Control of<br>3500 conduction may not be maintained.<br>Initial TJ = 125 °C<br>No voltage reapplied<br>3000 Rated V RRM  reapplied<br>2500<br>2000<br>1500<br>0.01 0.1 1<br>94382_06 Pulse Train Duration (s)<br>Peak Half Sine Wave  On-State Current (A)<br>**----- End of picture text -----**<br>


Fig. 6 - Maximum Non-Repetitive Surge Current 

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**----- Start of picture text -----**<br>
10 000<br>T J  = 25 °C<br>1000 TJ = 125 °C<br>100<br>0.5 1.0 1.5 2.0 2.5 3.0<br>94382_07 Instantaneous On-State Voltage (V)<br> Fig. 7 - On-State Voltage Drop Characteristics<br>1<br>Steady state value<br>RthJC = 0.15 K/W<br>(DC operation)<br>0.1<br>0.01<br>0.001<br>0.001 0.01 0.1 1 10<br>94382_08 Square Wave Pulse Duration (s)<br>Instantaneous On-State Current (A)<br> - Transient Thermal<br>Impedance (K/W)<br>thJC<br>Z<br>**----- End of picture text -----**<br>


Fig. 8 - Thermal impedance ZthJC Characteristics 

Document Number: 94382 

Revision: 11-Mar-14 

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## **VS-180RKI...PbF, VS-181RKI...PbF Series** 

## Vishay Semiconductors 

**==> picture [412 x 427] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>Rectangular gate pulse (1) PGM = 12 W,  tp = 5 ms<br>(a) Recommended load line for (2) PGM = 30 W,  tp = 2 ms<br>rated dI/dt: 20 V, 30 t r  ≤ 0.5 μs, t p  ≥ 6 μs Ω, (b) (3) P(4) P GMGM  = 60 W,  t = 200 W,  t p  = 1 ms p  = 300 μs<br>10 (b) Recommended load line for<br>≤ 30 % rated dI/dt: 15 V, 40 t r  ≤ 1 μs, t p  ≥ 6 μs Ω, (a)<br>1<br>(1) (2) (3) (4)<br>V GD<br>IGD Frequency limited by PG(AV)<br>0.1<br>0.001 0.01 0.1 1 10 100 1000<br>94382_09 Instantaneous Gate Current (A)<br> Fig. 9 - Gate Characteristics<br>ORDERING INFORMATION TABLE<br>Device code VS- 18 1 RKI 100 PbF<br>1 2 3 4 5 6<br>1 - Vishay Semiconductors product<br>2 - IT(AV) rated average output current (rounded/10)<br>3 - 0 = Eyelet terminals (gate and auxiliary cathode leads)<br>1 = Fast-on terminals (gate and auxiliary cathode leads)<br>4 - Thyristor<br>5 - Voltage code x 10 = VRRM (see Voltage Ratings table)<br>6 -  None = Standard production<br> PbF = Lead (Pb)-free<br>JT JT<br>J T C 25 =°  = 40 °C<br> = 125 °C<br>Instantaneous Gate Voltage (V)<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION TABLE** 

## **LINKS TO RELATED DOCUMENTS** 

Dimensions www.vishay.com/doc?95077 

Revision: 11-Mar-14 

Document Number: 94382 

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**Outline Dimensions** 

Vishay Semiconductors 

**==> picture [59 x 48] intentionally omitted <==**

## **TO-209AB (TO-93)** 

## **DIMENSIONS** in millimeters (inches) 

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**----- Start of picture text -----**<br>
Glass metal seal<br>19 (0.75) MAX.<br>Ø 8.5 (0.33)<br>Ø 4.3 (0.17)<br>Red silicon rubber<br>C.S. 0.51 mm [2]<br>(0.0008 s.i.)<br>Red cathode<br>213.5 ± 10<br>(8.41 ± 0.39) White gate 238.5 ± 10<br>(9.39 ± 0.39)<br>Red shrink<br>75 (2.95) White shrink<br>MIN.<br>28.5 (1.12) Ø 28.5 (1.12)<br>MAX. MAX.<br>16 (0.63) MAX.<br>21 (0.83)<br>MAX.<br>SW 32<br>3/4"-16UNF-2A<br>35 (1.38)<br>MAX.<br>0° to 15° Fast-on terminals<br>4 MAX. AMP. 280000-1<br>REF-250<br>38 MAX.<br>23 MIN.<br>Flexible lead<br>C.S. 35 mm [2]<br>(0.054 s.i.)<br>**----- End of picture text -----**<br>


For technical questions, contact: indmodules@vishay.com 

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Document Number: 95077 Revision: 19-May-10 

**Legal Disclaimer Notice** Vishay 

www.vishay.com 

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## **Disclaimer** 

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product.  To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. 

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications.  Such statements are not binding statements about the suitability of products for a particular application.  It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application.  Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time.  All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. 

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.  Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. 

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.  Product names and markings noted herein may be trademarks of their respective owners. 

## **Material Category Policy** 

**Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant.** 

**Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.** 

**Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards.  Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition.  We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards.** 

Revision: 02-Oct-12 

Document Number: 91000 

**1** 



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