# SCR THYRISTOR, 16A, 600V, TO-208AA

![Product image](https://novapart.co/image/farnell:2415896/)

**URL**: https://novapart.co/products/VS-16RIA60/scr-thyristor-16a-600v-to-208aa
**SKU**: VS-16RIA60
**Manufacturer**: VISHAY
**Category**: Semiconductors - Discretes || Thyristors || Thyristors - SCR Modules
**Price**: €7.2200
**Stock**: 10+
**Lead Time**: 94 days (indicative)

## Description

SCR Module Type:Single SCR; Peak Repetitive Off State Voltage:600V; Gate Trigger Current Max:60mA; Average Forward Current:16A; On State RMS Current:35A; Gate Trigger Voltage Max:2V; N

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2415896/)

**VS-16RIA Series** 

www.vishay.com 

## Vishay Semiconductors 

## **Medium Power Phase Control Thyristors (Stud Version), 16 A** 

## **FEATURES** 

- Improved glass passivation for high reliability and exceptional stability at high temperature 

- High dI/dt and dV/dt capabilities 

- Standard package 

- Low thermal resistance 

**TO-48 (TO-208AA)** 

- Metric threads version available 

- Types up to 1200 V VDRM/VRRM 

## **PRIMARY CHARACTERISTICS** 

|**PRIMARY CHARACTERISTICS**|**PRIMARY CHARACTERISTICS**|
|---|---|
|IT(AV)|16 A|
|VDRM/VRRM|100 V, 200 V, 400 V, 600 V, 800 V,<br>1000 V, 1200 V|
|VTM|1.75 V|
|IGT|60 mA|
|TJ|-65 °C to +125 °C|
|Package|TO-48 (TO-208AA)|
|Circuit configuration|Single SCR|



- Designed and qualified for industrial and consumer level 

- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 

## **TYPICAL APPLICATIONS** 

- Medium power switching 

- Phase control applications 

## **MAJOR RATINGS AND CHARACTERISTICS** 

|**MAJOR RATINGS AND CHARACTERISTICS**|**MAJOR RATINGS AND CHARACTERISTICS**|**MAJOR RATINGS AND CHARACTERISTICS**|**MAJOR RATINGS AND CHARACTERISTICS**|
|---|---|---|---|
|**PARAMETER**|**TEST CONDITIONS**|**VALUES**|**UNITS**|
|IT(AV)||16|A|
||TC|85|°C|
|IT(RMS)||35|A|
|ITSM|50 Hz|340|A|
||60 Hz|360||
|I2t|50 Hz|574|A2s|
||60 Hz|524||
|VDRM/VRRM||100 to 1200|V|
|tq|Typical|110|μs|
|TJ||-65 to +125|°C|



## **ELECTRICAL SPECIFICATIONS** 

## **VOLTAGE RATINGS** 

|**VOLTAGE RATINGS**|**VOLTAGE RATINGS**|**VOLTAGE RATINGS**|**VOLTAGE RATINGS**|**VOLTAGE RATINGS**|
|---|---|---|---|---|
|**TYPE**<br>**NUMBER**|**VOLTAGE**<br>**CODE**|**VDRM/VRRM, MAXIMUM REPETITIVE PEAK**<br>**AND OFF-STATE VOLTAGE(1)**<br>**V**|**VRSM, MAXIMUM NON-REPETITIVE**<br>**PEAK VOLTAGE(2)**<br>**V**|**IDRM/IRRM MAXIMUM**<br>**AT TJ = TJ MAXIMUM**<br>**mA**|
|VS-16RIA|10|100|150|20|
||20|200|300|10|
||40|400|500||
||60|600|700||
||80|800|900||
||100|1000|1100||
||120|1200|1300||



## **Notes** 

> (1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/μs 

> (2) For voltage pulses with tp  5 ms 

**1** 

Revision: 21-Sep-17 

Document Number: 93695 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-16RIA Series** 

Vishay Semiconductors 

**==> picture [59 x 48] intentionally omitted <==**

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|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**||||||
|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|||**VALUES**|**UNITS**|
|Maximum average on-state current<br>at case temperature|IT(AV)|180° sinusoidal conduction|||16|A|
||||||85|°C|
|Maximum RMS on-state current|IT(RMS)||||35|A|
|Maximum peak, one-cycle<br>non-repetitive surge current|ITSM|t = 10 ms|No voltage<br>reapplied|Sinusoidal half wave,<br>initial TJ= TJmaximum|340|A|
|||t = 8.3 ms|||360||
|||t = 10 ms|100 % VRRM<br>reapplied||285||
|||t = 8.3 ms|||300||
|Maximum I2t for fusing|I2t|t = 10 ms|No voltage<br>reapplied||574|A2s|
|||t = 8.3 ms|||524||
|||t = 10 ms|100 % VRRM<br>reapplied||405||
|||t = 8.3 ms|||375||
|Maximum I2t for fusing|I2t|t = 0.1 to 10 ms, no voltage reapplied,<br>TJ= TJmaximum|||5740|A2s|
|Low level value of threshold voltage|VT(TO)1|(16.7 % xx IT(AV)< I <x IT(AV)),<br>TJ= TJmaximum|||0.97|V|
|High level value of threshold voltage|VT(TO)2|(I >x IT(AV)), TJ= TJmaximum|||1.24||
|Low level value of<br>on-state slope resistance|rt1|(16.7 % xx IT(AV)< I <x IT(AV)),<br>TJ= TJmaximum|||17.9|m|
|High level value of<br>on-state slope resistance|rt2|(I >x IT(AV)), TJ= TJmaximum|||13.6||
|Maximum on-state voltage|VTM|Ipk= 50 A, TJ= 25 °C|||1.75|V|
|Maximum holding current|IH|TJ= 25 °C, anode supply 6 V, resistive load|||130|mA|
|Latching current|IL||||200||



|**SWITCHING**||||||
|---|---|---|---|---|---|
|**PARAMETER**||**SYMBOL**|**TEST CONDITIONS**|**VALUES**|**UNITS**|
|Maximum rate of rise<br>of turned-on current|VDRM 600 V|dI/dt|TJ= TJmaximum, VDM= Rated VDRM<br>Gate pulse = 20 V, 15, tp= 6 μs, tr= 0.1 μs maximum<br>ITM= (2 x rated dI/dt) A|200|A/μs|
||VDRM 800 V|||180||
||VDRM 1000 V|||160||
||VDRM 1600 V|||150||
|Typical turn-on time||tgt|TJ= 25 °C,<br>at rated VDRM/VRRM, TJ= 125 °C|0.9|μs|
|Typical reverse recovery time||trr|TJ= TJmaximum,<br>ITM= IT(AV), tp> 200 μs, dI/dt = - 10 A/μs|4||
|Typical turn-off time||tq|TJ= TJmaximum, ITM= IT(AV), tp> 200 μs, VR= 100 V,<br>dI/dt = - 10 A/μs, dV/dt = 20 V/μs linear to 67 % VDRM,<br>gate bias 0 V to 100 W|110||



## **Note** 

- tq = 10 μs up to 600 V, tq = 30 μs up to 1600 V available on special request 

|**BLOCKING**|**BLOCKING**||||
|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**VALUES**|**UNITS**|
|Maximum critical rate of rise<br>of off-state voltage|dV/dt|TJ= TJmaximum linear to 100 % rated VDRM|100|V/μs|
|||TJ= TJmaximum linear to 67 % rated VDRM|300(1)||



## **Note** 

- (1)   Available with: dV/dt = 1000 V/μs, to complete code add S90 i.e. 16RIA120S90 

Revision: 21-Sep-17 

Document Number: 93695 

**2** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-16RIA Series** 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

## Vishay Semiconductors 

|**TRIGGERING**|**TRIGGERING**|||||
|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**VALUES**|**UNITS**|
|Maximum peak gate power|PGM|TJ= TJmaximum||8.0|W|
|Maximum average gate power|PG(AV)|||2.0||
|Maximum peak positive gate current|IGM|TJ= TJmaximum||1.5|A|
|Maximum peak negative gate voltage|-VGM|TJ= TJmaximum||10|V|
|DC gate current required to trigger|IGT|TJ= - 65 °C|Maximum required gate trigger<br>current/voltage are the lowest<br>value which will trigger all units<br>6 V anode to cathode applied|90|mA|
|||TJ= 25 °C||60||
|||TJ= 125 °C||35||
|DC gate voltage required to trigger|VGT|TJ= - 65 °C||3.0|V|
|||TJ= 25 °C||2.0||
|||TJ= 125 °C||1.0||
|DC gate current not to trigger|IGD|TJ= TJmaximum, VDRM= Rated value||2.0|mA|
|DC gate voltage not to trigger|VGD|TJ= TJmaximum,<br>VDRM= Rated value|Maximum gate current/voltage<br>not to trigger is the maximum<br>value which will not trigger any<br>unit with rated VDRManode to<br>cathode applied|0.2|V|



## **THERMAL AND MECHANICAL SPECIFICATIONS** 

|**THERMAL AND MECHANICAL SPECIFICATIONS**|**THERMAL AND MECHANICAL SPECIFICATIONS**|**THERMAL AND MECHANICAL SPECIFICATIONS**|**THERMAL AND MECHANICAL SPECIFICATIONS**|**THERMAL AND MECHANICAL SPECIFICATIONS**|**THERMAL AND MECHANICAL SPECIFICATIONS**|
|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**VALUES**||**UNITS**|
|Maximum operating junction<br>and storage temperature range|TJ, TStg||-65 to +125||°C|
|Maximum thermal resistance,<br>junction to case|RthJC|DC operation|0.86||K/W|
|Maximum thermal resistance,<br>case to heat sink|RthCS|Mounting surface, smooth, flat and greased|0.35|||
||||**TO NUT**|**TO DEVICE**||
|Mounting torque||Lubricated threads<br>(Non-lubricated threads)|20 (27.5)|25|lbfin|
||||0.23 (0.32)|0.29|kgf · m|
||||2.3 (3.1)|2.8|N · m|
|Approximate weight|||14||g|
||||0.49||oz.|
|Case style||See dimensions - link at the end of datasheet|TO-48 (TO-208AA)|||



##  **RthJC CONDUCTION** 

|**RthJC CONDUCTION**|**RthJC CONDUCTION**|**RthJC CONDUCTION**|**RthJC CONDUCTION**|**RthJC CONDUCTION**|
|---|---|---|---|---|
|**CONDUCTION ANGLE**|**SINUSOIDAL CONDUCTION**|**RECTANGULAR CONDUCTION**|**TEST CONDITIONS**|**UNITS**|
|180°|0.21|0.15|TJ= TJmaximum|K/W|
|120°|0.25|0.25|||
|90°|0.31|0.34|||
|60°|0.45|0.47|||
|30°|0.76|0.76|||



## **Note** 

- The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC 

Revision: 21-Sep-17 

Document Number: 93695 

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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-16RIA Series** 

**==> picture [59 x 48] intentionally omitted <==**

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## Vishay Semiconductors 

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**----- Start of picture text -----**<br>
130<br>16RIA Series 16RIA Series<br>R         (DC)  thJC = 1.15 K/W 1.15 K/W 120 R         (DC) = 1.15 K/WthJC<br>110<br>100<br>Conduction Angle Conduction Period<br>90<br>30 °<br>30° 60 ° 80 60°<br>90 ° 90 °<br>120°° 70 120°<br>180°<br>180°<br>60<br>DC<br>50<br>10 15 20 25 0 10 20 30 40<br>Average On-state Current (A) Average On-state Current (A)<br>Fig. 2 - Current Ratings Characteristics<br>45<br>180°<br>40 120°<br>90°<br>35 60°<br>30°<br>30<br>RMS Limit<br>25<br>20<br>15 Conduction Angle<br>10 16RIA Series<br>5 T  = 125°CJ<br>0<br>0 5 10 15 20 250 25 50 75 100 125<br>Average On-state Current (A) Maximum Allowable Ambient Temperature (°C)<br>Fig. 3 - On-State Power Loss Characteristics<br>45<br>DC<br>40 180°<br>120°<br>35<br>90°<br>30 60°<br>30°<br>25<br>RMS Limit<br>20<br>15 Conduction Period<br>10 16RIA Series<br>T  = 125°C<br>J<br>5<br>0<br>0 4 8 12 16 20 24 280 25 50 75 100 125<br>Average On-state Current (A) Maximum Allowable Ambient Temperature (°C)<br>Fig. 4 - On-State Power Loss Characteristics<br>10 K/W<br>10 K/W<br>7 K/W<br>7 K/W<br>4 K/W<br>5 K/W<br>4 K/W<br>5 K/W<br>3 K/W<br>3K/W<br>2 K/W<br>2 K/W<br>R<br>=0.1 K/W- DeltaR<br>R<br>= 0.1 K/W- DeltaR<br>thSA<br>thSA<br>Maximum Allowable Case Temperature (°C)<br>Maximum Average On-state Power Loss (W)<br>Maximum Average On-state Power Loss (W)<br>**----- End of picture text -----**<br>


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130<br>16RIA Series<br>120 R         (DC)  thJC = 1.15 K/W 1.15 K/W<br>110<br>100<br>Conduction Angle<br>90<br>80 30° 60 °<br>90 °<br>120°°<br>70<br>180°<br>60<br>50<br>0 5 10 15 20 25<br>Average On-state Current (A)<br>Maximum Allowable Case Temperature (°C)<br>**----- End of picture text -----**<br>


Fig. 1 - Current Ratings Characteristics 

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**VS-16RIA Series** 

**==> picture [59 x 48] intentionally omitted <==**

## www.vishay.com 

## Vishay Semiconductors 

**==> picture [447 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
300 350<br>At Any Rated Load Condition And With Maximum Non Repetitive Surge Current<br>280 Rated V         ARRM pplied Following Surge. 325 Versus Pulse Train Duration. Control<br>260 @ 60 Hz 0.0083 sInitial T  = 125°CJ 300 Of Conduction May Not Be Maintained. Initial T  = 125J ° C<br>@ 50 Hz 0.0100 s No Voltage Reapplied<br>240 275 Rated V       Reapplied RRM<br>250<br>220<br>225<br>200<br>200<br>180<br>175<br>160 16RIA Series 150 16RIA Series<br>140 125<br>1 10 100 0.01 0.1 1<br>Number Of Equal Amplitude Half Cycle Current Pulses (N) Pulse Train Duration (s)<br>Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A)<br>**----- End of picture text -----**<br>


Fig. 5 - Maximum Non-Repetitive Surge Current 

Fig. 6 - Maximum Non-Repetitive Surge Current 

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**----- Start of picture text -----**<br>
1000<br>16RIA Series<br>100<br>10<br>T  = 25°CJ<br>T  = 125°C J<br>1<br>0.5 1 1.5 2 2.5 3 3.5<br>Instantaneous On-state Voltage (V)<br>Instantaneous On-state Current (A)<br>**----- End of picture text -----**<br>


Fig. 7 - Forward Voltage Drop Characteristics 

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**----- Start of picture text -----**<br>
10<br>Steady State Value<br>R         = 1.15 K/WthJC<br>(DC Operation)<br>1<br>0.1<br>16RIA Series<br>0.01<br>0.001 0.01 0.1 1 10<br>Square Wave Pulse Duration (s)<br>thJC<br>Transient Thermal Impedance Z          (K/W)<br>**----- End of picture text -----**<br>


Fig. 8 - Thermal Impedance ZthJC Characteristics 

Revision: 21-Sep-17 

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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-16RIA Series** 

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## Vishay Semiconductors 

**==> picture [332 x 422] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>Rectangular gate pulse (1) PGM = 16W,  tp = 4ms<br>a) Recommended load line for<br>(2) PGM = 30W,  tp = 2ms<br>     rated di/dt : 10V, 20ohms<br>     tr <=0.5 µs, tp >= 6 µs (3) PGM = 60W,  tp = 1ms<br>b) Recommended load line for (4) PGM = 60W,  tp = 1ms<br>10     tr<=1 µs, tp >= 6 µs     <=30% rated di/dt : 10V, 65ohms<br>(a)<br>(b)<br>1<br>(4)<br>(1) (2) (3)<br>VGD<br>IGD 16RIA Series Frequency Limited by PG(AV)<br>0.1<br>0.001 0.01 0.1 1 10 100<br>Instantaneous Gate Current (A)<br>Fig. 9 - Gate Characteristics<br>Device code VS- 16 RIA 120 M S90<br>1 2 3 4 5 6<br>1 - Vishay Semiconductors product<br>2 - Current code<br>3 - Essential part number<br>4 - Voltage code x 10 = VRRM (see Voltage Ratings table)<br>5 - None = stud base TO-48 (TO-208AA) 1/4" 28UNF-2A<br>M = stud base TO-48 (TO-208AA) M6 x 1<br>6 - Critical dV/dt:<br>None = 300 V/µs (standard value)<br>S90 = 1000 V/µs (special selection)<br>jT<br>Tj = -65 °C<br>Tj = 125  °  = 25 °C<br>Instantaneous Gate Voltage (V) C<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION TABLE** 

## **LINKS TO RELATED DOCUMENTS** 

Dimensions www.vishay.com/doc?95333 

Revision: 21-Sep-17 

Document Number: 93695 

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**Outline Dimensions** 

Vishay Semiconductors 

**==> picture [59 x 48] intentionally omitted <==**

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## **TO-208AA (TO-48)** 

## **DIMENSIONS** in millimeters (inches) 

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**----- Start of picture text -----**<br>
C<br>Ø 1.7/1.8<br>(Ø 0.06/0.07)<br>Ø 3.9/4.1<br>(Ø 0.15/0.16)<br>G<br>30.2 max.<br>(0.18 max.)<br>22.2 max..<br>(0.87 max.)<br>12.8 max.<br>(0.5 max.)<br>10.7/11.5<br>(0.42/0.45)<br>Note:<br>A = Anode<br>C = Cathode<br>A<br>G = Gate<br>1/4"-28UNF-2A<br>For metric device M6 x 1<br>Ø 15.5<br>(Ø 0.61)<br>13.8/14.3<br>(0.54/0.56)<br>Across flats<br>45°<br>3.1/3.3(0.12/0.13)<br>1.24/1.44<br>(0.04/0.05)<br>**----- End of picture text -----**<br>


Revision: 02-Jun-17 

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**Legal Disclaimer Notice** Vishay 

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**==> picture [59 x 48] intentionally omitted <==**

## **Disclaimer** 

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product.  To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. 

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications.  Such statements are not binding statements about the suitability of products for a particular application.  It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time.  All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts.  Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. 

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. 

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.  Product names and markings noted herein may be trademarks of their respective owners. 

_**© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_ 

Revision: 08-Feb-17 

Document Number: 91000 

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## Links

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