# Fast / Ultrafast Diode, 200 V, 150 A, Single, 1.13 V, 34 ns, 1.6 kA

![Product image](https://novapart.co/image/farnell:2690130/)

**URL**: https://novapart.co/products/VS-150EBU02/fast-ultrafast-diode-200-v-150-a-single-113-34-ns
**SKU**: VS-150EBU02
**Manufacturer**: VISHAY
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Fast & Ultrafast Recovery Rectifier Diodes
**Price**: €5.3400
**Stock**: 10+

## Description

Repetitive Reverse Voltage Vrrm Max:200V; Forward Current If(AV):150A; Diode Configuration:Single; Forward Voltage VF Max:1.13V; Reverse Recovery Time trr Max:34ns; Forward Surge Curr

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (14-Jun-2023) |
| No. Of Pins | - |
| Product Range | - |
| Qualification | - |
| Diode Case Style | PowerTab |
| Diode Configuration | Single |
| Forward Voltage Max | 1.13V |
| Forward Surge Current | 1.6kA |
| Reverse Recovery Time | 34ns |
| Average Forward Current | 150A |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 200V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2690130/)

**VS-150EBU02** 

Vishay Semiconductors 

www.vishay.com 

## **Ultrafast Soft Recovery Diode, 150 A FRED Pt[®]** 

## **FEATURES** 

- Ultrafast recovery time 

**==> picture [186 x 92] intentionally omitted <==**

**----- Start of picture text -----**<br>
1<br>Cathode Anode<br>2<br>ee<br>PowerTab [®]<br>**----- End of picture text -----**<br>


- 175 °C max. operating junction temperature 

- Screw mounting only 

- Designed and qualified according to JEDEC[®] -JESD 47 

- PowerTab[®] package 

- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 

## **BENEFITS** 

- Reduced RFI and EMI 

|**PRIMARY CHARACTERISTICS**|**PRIMARY CHARACTERISTICS**|
|---|---|
|IF(AV)|150 A|
|VR|200 V|
|VFat IF|0.79 V|
|trr(typ.)|See recovery table|
|TJmax.|175 °C|
|Package|PowerTab®|
|Circuit configuration|Single|



- Higher frequency operation 

- Reduced snubbing 

- Reduced parts count 

## **DESCRIPTION / APPLICATIONS** 

These diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. 

The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses. 

## **ABSOLUTE MAXIMUM RATINGS** 

|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|
|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**MAX.**|**UNITS**|
|Cathode to anode voltage|VR||200|V|
|Continuous forward current|IF(AV)|TC= 116 °C|150|A|
|Single pulse forward current|IFSM|TC= 25 °C|1600||
|Maximum repetitive forward current|IFRM|Square wave, 20 kHz|380||
|Operating junction and storage temperatures|TJ, TStg||-55 to +175|°C|



|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)<br>~~COO~~|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)<br>~~COO~~|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)<br>~~COO~~|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)<br>~~COO~~|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)<br>~~COO~~|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)<br>~~COO~~|**ELECTRICAL SPECIFICATIONS**(TJ= 25 °C unless otherwise specified)<br>~~COO~~|
|---|---|---|---|---|---|---|
|**PARAMETER**<br>~~COO~~<br>~~a~~<br>~~Po~~|**SYMBOL**<br>~~COO~~<br>~~es~~<br>|**TEST CONDITIONS**<br>~~COO~~<br>|**MIN.**<br>~~COO~~<br>|**TYP.**<br>~~COO~~<br>|**MAX.**<br>~~COO~~<br>|**UNITS**<br>~~COO~~<br>|
|Breakdown voltage, blocking voltage<br>~~a~~<br>~~ee~~<br>~~Po~~|VBR,<br>VR<br>~~ee~~<br>~~es~~<br>|IR= 100 μA<br>~~ee~~<br>|200<br>~~ee~~<br>|-<br>~~ee~~<br>|-<br>~~ee~~<br>|V<br>|
|Forward voltage<br>~~Po~~|VF<br>~~es~~<br>|IF= 150 A<br>|-<br>|0.99<br>|1.13<br>||
|||IF= 150 A, TJ= 175 °C<br>|-<br>|0.79<br>|0.90<br>||
|Reverse leakage current<br>~~Po|~~|IR<br>~~es~~<br>~~|~~|VR= VRrated<br>~~|~~|-<br>~~|~~|-<br>~~|~~|50<br>~~|~~|μA<br>~~|~~|
|||TJ= 150 °C, VR= VRrated<br>~~|~~<br>~~a~~|-<br>~~|~~<br>~~a~~|-<br>~~|~~<br>~~a~~|2<br>~~|~~<br>~~a~~|mA<br>~~|~~<br>~~a~~|
|Junction capacitance<br>~~|~~<br>~~a~~|CT<br>~~|~~|VR= 200 V<br>~~|~~<br>~~a~~|-<br>~~|~~<br>~~a~~|180<br>~~|~~<br>~~a~~|-<br>~~|~~<br>~~a~~|pF<br>~~|~~<br>~~a~~|
|Series inductance<br>~~a~~<br>~~a~~|LS|Measured lead to lead 5 mm from package body|-|3.5|-|nH|



Revision: 30-Jan-18 **1** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

Document Number: 93002 

**VS-150EBU02** 

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www.vishay.com 

## Vishay Semiconductors 

|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise|**DYNAMIC RECOVERY CHARACTERISTICS**(TJ= 25 °C unless otherwise|specified)|specified)|specified)|specified)|specified)|specified)|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**PARAMETER**||**SYMBOL**|**TEST CONDITIONS**||||**MIN.**||**TYP.**||**MAX.**|**UNITS**|
|Reverse recovery time||trr|IF= 1.0 A, dIF/dt = 200 A/μs, VR= 30 V||||-||-||45|ns|
||||TJ= 25 °C|IF= 150 A<br>VR= 160 V<br>dIF/dt = 200 A/μs|||-||34||-||
||||TJ= 125 °C||||-||58||-||
|Peak recovery current||IRRM|TJ= 25 °C||||-||4.5||-|A|
||||TJ= 125 °C||||-||9.0||-||
|Reverse recovery charge||Qrr|TJ= 25 °C||||-||87||-|nC|
||||TJ= 125 °C||||-||300||-||
||||||||||||||
|**THERMAL - MECHANICAL SPECIFICATIONS**|||||||||||||
|**PARAMETER**||**SYMBOL**|**TEST CONDITIONS**||||**MIN.**||**TYP.**||**MAX.**|**UNITS**|
|Thermal resistance, junction to case||RthJC|||||-||-||0.35|K/W|
|Thermal resistance, case to heatsink||RthCS|Mounting surface, flat, smooth,||and greased||-||0.2||-||
|Weight|||||||-||-||5.02|g|
||||||||-||0.18||-|oz.|
|Mounting torque|||||||1.2<br>(10)||-||2.4<br>(20)|N · m<br>(lbf · in)|
|Markingdevice|||Case style PowerTab®||||150EBU02||||||
||**VFM- Forward Voltage Drop (V)**<br>0      0.2    0.4    0.6    0.8     1     1.2    1.4    1.6    1.8<br>~~TJ = 175 °C~~<br>~~T~~J~~= 125 °C~~<br>~~T~~J~~=   25 °C~~<br>**VR **<br>**IR - Reverse Current (μA)**<br>0.001<br>0.01<br>0.1<br>1<br>10<br>100<br>1000<br>0                 50||||||**- Reverse Voltage (V)**<br>100              150              200<br>~~25 °C~~<br>~~T~~J~~= 175 °C~~<br>~~125~~°~~C~~||||||
|**IF - Instantaneous Forward Current (A)**<br>1<br>10<br>100<br>1000|||||||||||||
|||||||||~~T~~J~~= 17~~<br>~~1~~||~~C~~<br>~~25~~°~~C~~|||
||||||||||||||
||||||||||||||
|||||||||||~~°~~|||
|||||||||||~~25 C~~|||
||||||||||||||
||||||||||||||
||||||||||||||



Fig. 1 - Maximum Forward Voltage Drop Characteristics 

Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 

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**----- Start of picture text -----**<br>
10 000<br>TJ = 25  ° C<br>1000<br>100<br>1                        10                      100                    1000<br>VR - Reverse Voltage (V)<br>Junction Capacitance (pF)<br>-<br>T<br>C<br>**----- End of picture text -----**<br>


Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 

Revision: 30-Jan-18 

Document Number: 93002 

**2** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-150EBU02** 

www.vishay.com 

Vishay Semiconductors 

**==> picture [59 x 48] intentionally omitted <==**

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**----- Start of picture text -----**<br>
1<br>D = 0.50<br>D = 0.20<br>D = 0.10D = 0.05 PDM<br>0.1 D = 0.02 t<br>D = 0.01  1<br>t 2<br>Single Pulse Notes:<br>(Thermal Resistance)  1. Duty factor D =  t1/ t2<br>2. Peak TJ = PDM x ZthJC + Tc<br>0.01<br>0.00001                       0.0001                           0.001                              0.01                               0.1                                 1<br>t1 - Rectangular Pulse Duration (s)<br>Thermal Impedance (°C/W)<br>-<br>thJC<br>Z<br>**----- End of picture text -----**<br>


Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics 

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**----- Start of picture text -----**<br>
180<br>160<br>140 DC<br>120<br>100 Square wave (D = 0.50)<br>80 % Rated VR applied<br>80<br>see note (1)<br>60<br>0             50           100           150          200         250<br>IF(AV) - Average Forward Current (A)<br> Allowable Case Temperature (°C)<br>**----- End of picture text -----**<br>


Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current 

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**----- Start of picture text -----**<br>
70<br>I F  = 150 A<br>60 I F = 75 A<br>50<br>40<br>30<br>20 T VJ R  = 160 V = 125 °C<br>TJ =  25 °C<br>10<br>100 1000<br>dIFdt (A/μs)<br> (ns)<br>trr<br>**----- End of picture text -----**<br>


Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt 

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**----- Start of picture text -----**<br>
250<br>200 RMS Limit<br>150<br>D = 0.01<br>D = 0.02<br>100<br>D = 0.05<br>D = 0.10<br>D = 0.20<br>50<br>D = 0.50<br>DC<br>0<br>0             50           100           150          200         250<br>IF(AV) - Average Forward Current (A)<br>Fig. 6 - Forward Power Loss Characteristics<br> Average Power Loss (W)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
900<br>800 VR = 160 V<br>TJ = 125 ˚ C<br>700 T J  =  25 ˚  C<br>600 I F  = 150 A<br>500 IF = 75 A<br>400<br>300<br>200<br>100<br>0<br>100 1000<br>dIFdt (A/μs)<br> (nC)<br>rr<br>Q<br>**----- End of picture text -----**<br>


Fig. 8 - Typical Stored Charge vs. dIF/dt 

## **Note** 

> (1) Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR 

Revision: 30-Jan-18 

Document Number: 93002 

**3** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-150EBU02** 

Vishay Semiconductors 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

**==> picture [240 x 135] intentionally omitted <==**

**----- Start of picture text -----**<br>
VR = 200 V<br>0.01 Ω<br>L = 70 μH<br>D.U.T.<br>D<br>dIF/dt<br>adjust<br>G IRFP250<br>S<br>**----- End of picture text -----**<br>


Fig. 9 - Reverse Recovery Parameter Test Circuit 

**==> picture [274 x 221] intentionally omitted <==**

**----- Start of picture text -----**<br>
(3)<br>IF trr<br>ta tb<br>0<br>(4)<br>Qrr<br>(2)<br>IRRM 0.5 IRRM<br>di(rec)M/dt (5)<br>0.75 IRRM<br>(1) diF/dt<br>(1) diF/dt - rate of change of current  (4) Qrr - area under curve defined by trr<br>      through zero crossing       and IRRM<br>(2) IRRM - peak reverse recovery current Qrr = t      2rr x IRRM<br>(3) t     from zero crossing point of negative rr - reverse recovery time measured  (5) di(rec)M/dt - peak rate of change of<br>     going IF to point where a line passing        current during tb portion of trr<br>    through 0.75 IRRM and 0.50 IRRM<br>    extrapolated to zero current.<br>**----- End of picture text -----**<br>


Fig. 10 - Reverse Recovery Waveform and Definitions 

Revision: 30-Jan-18 

Document Number: 93002 

**4** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-150EBU02** 

Vishay Semiconductors 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

## **ORDERING INFORMATION TABLE** 

|**Device code**|**VS-**|**VS-**||**150**<br>**E**|**150**<br>**E**|**B**|**U**|**02**||
|---|---|---|---|---|---|---|---|---|---|
||1|||2<br>3||4|5|6||
||**1**||-||Vishay Semiconductors product|||||
|||||||||||
||**2**||-||Current rating (150||= 150 A)|||
|||||||||||
||**3**||-||Single diode|||||
|||||||||||
||**4**||-||PowerTab®(ultrafast/hyperfast only)|||||
|||||||||||
||**5**||-||Ultrafast recovery|||||
|||||||||||
||**6**||-||Voltage rating (02 = 200 V)|||||



|**LINKS TO RELATED DOCUMENTS**|**LINKS TO RELATED DOCUMENTS**||
|---|---|---|
|Dimensions||www.vishay.com/doc?95240|
|Part marking information||www.vishay.com/doc?95370|
|Application note||www.vishay.com/doc?95179|
|SPICE model||www.vishay.com/doc?96503|



Revision: 30-Jan-18 

Document Number: 93002 

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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Outline Dimensions** 

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www.vishay.com 

## Vishay Semiconductors 

## **PowerTab[®]** 

## **DIMENSIONS** in millimeters (inches) 

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**----- Start of picture text -----**<br>
15.90 (0.62)<br>1.35 (0.05)<br>15.60 (0.61)<br>1.20 (0.04)<br>15.60 (0.61)<br>14.80 (0.58)<br>Lead 1<br>Ø 4.20 (Ø 0.16)<br>Ø 4.00 (Ø 0.15)<br>Lead 2<br>Ø 4.20 (Ø 0.16)<br>Ø 4.00 (Ø 0.15) 3.09 (0.12) 1.30 (0.05)<br>3.00 (0.11) 1.10 (0.04)<br>5.45 REF.<br>(0.21 REF.) 0.60 (0.02) 12.20 (0.48)<br>0.40 (0.01)<br>12.00 (0.47)<br>Lead assignments<br>Lead 1 = Cathode<br>Lead 2 = Anode<br>4.70 (0.19) 4.50 (0.18)<br>8.54 (0.34) 8.20 (0.32)<br>)(0.71<br>)<br>18.25  18.00 (0.70) )<br>(1.08<br>12.40 (0.48) 12.10 (0.47) (1.56<br>27.65  27.25 (1.07)<br>39.8  39.6 (1.55)<br>)(0.205.20  4.95 (0.19)<br>4.95 (0.19) 4.75 (0.18)<br>**----- End of picture text -----**<br>


Revision: 08-Jun-15 

Document Number: 95240 

**1** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Legal Disclaimer Notice** Vishay 

www.vishay.com 

**==> picture [59 x 48] intentionally omitted <==**

## **Disclaimer** 

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product.  To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. 

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications.  Such statements are not binding statements about the suitability of products for a particular application.  It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time.  All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts.  Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. 

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. 

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.  Product names and markings noted herein may be trademarks of their respective owners. 

_**© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_ 

Revision: 08-Feb-17 

Document Number: 91000 

**1** 



## Links

- [View this product on Novapart](https://novapart.co/products/VS-150EBU02/fast-ultrafast-diode-200-v-150-a-single-113-34-ns)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/vishay/vs-150ebu02/diode-single-200v-150a-powertab/dp/2690130)
---

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