# Thyristor, 800 V, 15 mA, 8 A, 12.5 A, TO-220AB, 3 Pins

![Product image](https://novapart.co/image/farnell:2989363/)

**URL**: https://novapart.co/products/VS-12TTS08HM3/thyristor-800-v-15-ma-8-a-125-to-220ab-3-pins
**SKU**: VS-12TTS08HM3
**Manufacturer**: VISHAY
**Category**: Semiconductors - Discretes || Thyristors || Thyristors - SCRs
**Price**: €1.0400
**Stock**: 1000+
**Lead Time**: 148 days (indicative)

## Description

Peak Repetitive Off-State Voltage, Vdrm:800V; Gate Trigger Current Max, Igt:15mA; Current It av:8A; On State RMS Current IT(rms):12.5A; Thyristor Case Style:TO-220AB; No. of Pins

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Thyristor Mounting | Through Hole |
| Holding Current Max | 30mA |
| On State Rms Current | 12.5A |
| Thyristor Case Style | TO-220AB |
| Average On State Current | 8A |
| Gate Trigger Current Max | 15mA |
| Gate Trigger Voltage Max | 1V |
| Operating Temperature Max | 125°C |
| Peak Non Repetitive Surge Current | 95A |
| Peak Repetitive Off State Voltage | 800V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2989363/)

**==> picture [506 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
VS-12TTS08HM3<br>www.vishay.com Vishay Semiconductors<br>“wv Te<br>High Voltage, Phase Control Thyristor, 12 A<br>FEATURES<br>2<br>(A) • AEC-Q101 qualified<br>€ • Meets JESD 201 class 1A whisker test RoHS<br>• Flexible solution for reliable AC power<br>rectification<br>• Easy control peak current at charger power<br>[3]<br>1 [2] up to reduce passive / electromechanical<br>TO-220AB 1 (K) (G) 3<br>**----- End of picture text -----**<br>


- Easy control peak current at charger power up to reduce passive / electromechanical components 

- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 

## **PRIMARY CHARACTERISTICS** 

|**PRIMARY CHARACTERISTICS**|**PRIMARY CHARACTERISTICS**|
|---|---|
|IT(AV)|8 A|
|VDRM/VRRM|800 V|
|VTM|1.2 V|
|IGT|15 mA|
|TJ|-40 to +125 °C|
|Package|TO-220AB|
|Circuit configuration|Single SCR|



## **APPLICATIONS** 

- On-board and off-board EV / HEV battery chargers 

- Renewable energy inverters 

## **DESCRIPTION** 

The VS-12TTS08HM3 high voltage series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. 

## **OUTPUT CURRENT IN TYPICAL APPLICATIONS** 

|**APPLICATIONS**|**SINGLE-PHASE BRIDGE**|**THREE-PHASE BRIDGE**|**UNITS**|
|---|---|---|---|
|Capacitive input filter TA= 55 °C, TJ= 125 °C,<br>common heatsink of 1 °C/W|13.5|17|A|



|**MAJOR RATINGS AND CHARACTERISTICS**|**MAJOR RATINGS AND CHARACTERISTICS**|**MAJOR RATINGS AND CHARACTERISTICS**|**MAJOR RATINGS AND CHARACTERISTICS**|
|---|---|---|---|
|**PARAMETER**|**TEST CONDITIONS**|**VALUES**|**UNITS**|
|IT(AV)|Sinusoidal waveform|8|A|
|IT(RMS)||12.5||
|VRRM/VDRM||800|V|
|ITSM||110|A|
|VT|8 A, TJ= 25 °C|1.2|V|
|dV/dt||150|V/μs|
|dI/dt||100|A/μs|
|TJ|Range|-40 to +125|°C|



## **VOLTAGE RATINGS** 

||**VRRM, MAXIMUM PEAK**|**VDRM, MAXIMUM PEAK**|**IRRM / IDRM**|
|---|---|---|---|
|**PART NUMBER**|**REVERSE VOLTAGE**|**DIRECT VOLTAGE**|**AT 125 °C**|
||**V**|**V**|**mA**|
|VS-12TTS08HM3|800|800|5.0|



Revision: 04-Jun-2018 

Document Number: 96538 

**1** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-12TTS08HM3** 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

## Vishay Semiconductors 

|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|||||
|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**VALUES**|**UNITS**|
|Maximum average on-state current|IT(AV)|TC= 108 °C, 180° conduction, half sine wave||8|A|
|Maximum RMS on-state current|IT(RMS)|||12.5||
|Maximum peak one-cycle<br>non-repetitive surge current|ITSM|10 ms sine pulse, rated VRRMapplied, TJ= 125 °C||95||
|||10 ms sine pulse, no voltage reapplied, TJ= 125 °C||110||
|Maximum I2t for fusing|I2t|10 ms sine pulse, rated VRRMapplied, TJ= 125 °C||45|A2s|
|||10 ms sine pulse, no voltage reapplied, TJ= 125 °C||64||
|Maximum I2t for fusing|I2t|t = 0.1 ms to 10 ms, no voltage reapplied, TJ= 125 °C||640|A2s|
|Maximum on-state voltage drop|VTM|8 A, TJ= 25 °C||1.2|V|
|On-state slope resistance|rt|TJ= 125 °C||16.2|m|
|Threshold voltage|VT(TO)|||0.87|V|
|Maximum reverse and direct leakage current|IRM/IDM|TJ= 25 °C|VR= rated VRRM/ VDRM|0.05|mA|
|||TJ= 125 °C||5.0||
|Typical holding current|IH|Anode supply = 6 V, resistive load, initial IT= 1 A,<br>TJ= 25 °C||30||
|Typical latchingcurrent|IL|Anode supply = 6 V, resistive load, TJ= 25 °C||50||
|Maximum rate of rise of off-state voltage|dV/dt|TJ= TJmax., linear to 80 %, VDRM= Rg- k = open||150|V/μs|
|Maximum rate of rise of turned-on current|dI/dt|||100|A/μs|



|**TRIGGERING**|**TRIGGERING**||||
|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**VALUES**|**UNITS**|
|Maximum peakgate power|PGM||8.0|W|
|Maximum averagegate power|PG(AV)||2.0||
|Maximum peak positivegate current|+IGM||1.5|A|
|Maximum peak negativegate voltage|-VGM||10|V|
|Maximum required DC gate current to trigger|IGT|Anode supply = 6 V, resistive load, TJ= - 65 °C|20|mA|
|||Anode supply = 6 V, resistive load, TJ= 25 °C|15||
|||Anode supply = 6 V, resistive load, TJ= 125 °C|10||
|Maximum required DC gate voltage to trigger|VGT|Anode supply = 6 V, resistive load, TJ= -65 °C|1.2|V|
|||Anode supply = 6 V, resistive load, TJ= 25 °C|1||
|||Anode supply = 6 V, resistive load, TJ= 125 °C|0.7||
|Maximum DCgate voltage not to trigger|VGD|TJ= 125 °C, VDRM= rated value|0.2||
|Maximum DCgate current not to trigger|IGD||0.1|mA|



|**SWITCHING**|**SWITCHING**|**SWITCHING**|||
|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**VALUES**|**UNITS**|
|Typical turn-on time|tgt|TJ= 25 °C|0.8|μs|
|Typical reverse recovery time|trr|TJ= 125 °C|3||
|Typical turn-off time|tq||100||



Revision: 04-Jun-2018 

Document Number: 96538 

**2** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-12TTS08HM3** 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

## Vishay Semiconductors 

|**THERMAL AND MECHANICAL SPECIFICATIONS**|**THERMAL AND MECHANICAL SPECIFICATIONS**|**THERMAL AND MECHANICAL SPECIFICATIONS**|||
|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**VALUES**|**UNITS**|
|Maximum junction and storage<br>temperature range|TJ, TStg||-40 to +125|°C|
|Maximum thermal resistance,<br>junction to case|RthJC|DC operation|1.5|°C/W|
|Maximum thermal resistance,<br>junction to ambient|RthJA||62||
|Typical thermal resistance,<br>case to heatsink|RthCS|Mounting surface, smooth, and greased|0.5||
|Approximate weight|||2<br>0.07|g|
|||||oz.|
|Mounting torque|minimum<br>maximum||6 (5)|kgf · cm<br>(lbf · in)|
||||12 (10)||
|Markingdevice||Case style TO-220AB|12TTS08H||



**==> picture [165 x 377] intentionally omitted <==**

**----- Start of picture text -----**<br>
125<br>R         (DC) = 1.5 K/W thJC<br>120<br>115 Conduction angle<br>110<br>30°<br>60°<br>105 90°<br>120°<br>180°<br>100<br>0 2 4 6 8 10<br>Average On-state Current (A)<br>Fig. 1 - Current Rating Characteristics<br>125<br>R       thJC (DC) = 1.5 K/W<br>120<br>115<br>Conduction period<br>110<br>30°<br>60°<br>105 90°<br>120°<br>180° DC<br>100<br>0 2 4 6 8 10 12 14<br>Average On-state Current (A)<br>Fig. 2 - Current Rating Characteristics<br>Maximum Allowable Case Temperature (°C)<br>Maximum Allowable Case Temperature (°C)<br>**----- End of picture text -----**<br>


**==> picture [177 x 377] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>180°<br>9<br>120°<br>8 90 °<br>60°<br>7 30°<br>6<br>5 RMS Limit<br>4<br>3 Conduction angle<br>2<br>1 T J = 125 °C<br>0<br>0 1 2 3 4 5 6 7 8 9<br>Average On-state Current (A)<br>Fig. 3 - On-State Power Loss Characteristics<br>14<br>DC<br>12 180 °<br>120°<br>90°<br>10<br>60°<br>30°<br>8<br>6 RMS Limit<br>4 Conduction Period<br>2 TJ = 125 °C<br>0<br>0 2 4 6 8 10 12 14<br>Average On-state Current (A)<br>Fig. 4 - On-State Power Loss Characteristics<br>Maximum Average On-state Power Loss (W)<br>Maximum Average On-state Power Loss (W)<br>**----- End of picture text -----**<br>


Revision: 04-Jun-2018 

Document Number: 96538 

**3** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-12TTS08HM3** 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

**==> picture [179 x 166] intentionally omitted <==**

**----- Start of picture text -----**<br>
110<br>At any rated load condition and with<br>100 rated V rrm  applied following surge.<br>Initial Tj = 150°C<br>at 60 Hz 0.0083s<br>90 at 50 Hz 0.0100s<br>80<br>70<br>60<br>50<br>40<br>1 10 100<br>Number of Equal Amplitude Half Cycle<br>Current Pulses (N)<br>Peak Half Sine Wave Forward Current (A)<br>**----- End of picture text -----**<br>


Fig. 5 - Maximum Non-Repetitive Surge Current 

## Vishay Semiconductors 

**==> picture [176 x 158] intentionally omitted <==**

**----- Start of picture text -----**<br>
120<br>Maximum non-repetitive surge current<br>110 versus pulse train duration.<br>Initial Tj = Tj max.<br>100 No voltage reapplied<br>Rated Vrrm reapplied<br>90<br>80<br>70<br>60<br>50<br>40<br>0.01 0.1 1 10<br>Pulse Train Duration (s)<br>Peak Half Sine Wave Forward Current (A)<br>**----- End of picture text -----**<br>


Fig. 6 - Maximum Non-Repetitive Surge Current 

**==> picture [168 x 160] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>100<br>T  = 25 °CJ<br>10<br>T  = 125 °CJ<br>1<br>0.5 1 1.5 2 2.5 3 3.5<br>Instantaneous On-state Voltage (V)<br>Instantaneous On-state Current (A)<br>**----- End of picture text -----**<br>


Fig. 7 - On-State Voltage Drop Characteristics 

**==> picture [296 x 174] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>Steady state value<br>(DC operation)<br>1 D = 0.50<br>D = 0.33<br>D = 0.25<br>D = 0.17<br>D = 0.08<br>0.1<br>Single pulse<br>0.01<br>0.0001 0.001 0.01 0.1 1<br>Square Wave Pulse Duration (s)<br>Fig. 8 - Thermal Impedance ZthJC Characteristics<br>thJC<br>Transient Thermal Impedance Z        (°C/W)<br>**----- End of picture text -----**<br>


Revision: 04-Jun-2018 

Document Number: 96538 

**4** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-12TTS08HM3** 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

## Vishay Semiconductors 

## **ORDERING INFORMATION TABLE** 

|**Device code**|**VS-**|**VS-**||**12**<br>**T**<br>**T**<br>**S**|**12**<br>**T**<br>**T**<br>**S**|**08**|**H**|**M3**||
|---|---|---|---|---|---|---|---|---|---|
|||1||5<br>3<br>2<br>4||6|7|8||
||**1**||-||Vishay Semiconductors product|||||
||**2**||-||Current rating (12.5 A)|||||
||**3**||-||Circuit configuration:|||||
||||||T = single thyristor|||||
||**4**||-||Package:|||||
|||||T = TO-220||||||
||**5**||-||Type of silicon:|||||
||||||S = standard recovery rectifier|||||
||**6**||-||Voltage rating (08 = 800 V)|||||
|||||||||||
||**7**||-||H = AEC-Q101 qualified|||||
|||||||||||
||**8**||-||Environmental digit:|||||
||||||M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free|||||



|**ORDERING INFORMATION** (Example)|**ORDERING INFORMATION** (Example)|**ORDERING INFORMATION** (Example)|**ORDERING INFORMATION** (Example)|**ORDERING INFORMATION** (Example)|
|---|---|---|---|---|
|**PREFERRED P/N**|**QUANTITY PER T/R**|**MINIMUM ORDER QUANTITY**||**PACKAGING DESCRIPTION**|
|VS-12TTS08HM3|50|1000||Antistatic plastic tube|
||||||
|**LINKS TO RELATED DOCUMENTS**|||||
|Dimensions|||www.vishay.com/doc?95222||
|Part markinginformation|||www.vishay.com/doc?95028||



Revision: 04-Jun-2018 

Document Number: 96538 

**5** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Outline Dimensions** 

**==> picture [59 x 48] intentionally omitted <==**

## Vishay Semiconductors 

## **TO-220AB** 

## **DIMENSIONS** in millimeters and inches 

|(6)||(6|)|)|H1<br>Detail B<br>C<br>A<br>B<br>L<br>Ø P<br>0.014<br>A<br>B<br>M<br>M<br>Seating<br>plane<br>c<br>A2<br>A1<br>A<br>A<br>A<br>**Lead assignments**<br>Diodes<br>1. - Anode/open<br>2. - Cathode<br>3. - Anode<br>(6)<br>(7)|H1<br>Detail B<br>C<br>A<br>B<br>L<br>Ø P<br>0.014<br>A<br>B<br>M<br>M<br>Seating<br>plane<br>c<br>A2<br>A1<br>A<br>A<br>A<br>**Lead assignments**<br>Diodes<br>1. - Anode/open<br>2. - Cathode<br>3. - Anode<br>(6)<br>(7)|H1<br>Detail B<br>C<br>A<br>B<br>L<br>Ø P<br>0.014<br>A<br>B<br>M<br>M<br>Seating<br>plane<br>c<br>A2<br>A1<br>A<br>A<br>A<br>**Lead assignments**<br>Diodes<br>1. - Anode/open<br>2. - Cathode<br>3. - Anode<br>(6)<br>(7)|H1<br>Detail B<br>C<br>A<br>B<br>L<br>Ø P<br>0.014<br>A<br>B<br>M<br>M<br>Seating<br>plane<br>c<br>A2<br>A1<br>A<br>A<br>A<br>**Lead assignments**<br>Diodes<br>1. - Anode/open<br>2. - Cathode<br>3. - Anode<br>(6)<br>(7)|A|A|A|A|B<br>Seating<br>|(H<br>|||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||||||A||||||||||||||||||||
|||E2|E<br>(7)||Ø P||||||||plane<br>A1<br>A<br>A||||||||||||
||||||0.014<br>A<br>B<br>M<br>M||||||||||||||||||||
||D|1<br>D1<br>Q|||Detail B<br>C<br>L<br>(<br>(||||1||||||1)||||||||||
||||||||||||||||||||||||||
||||3<br>2||||||c||A2||||||||||||||
||||||||||||||||||||||||||
||||||||||||||||||||||||||
|||2|e1<br>e<br>x||||||||||||||||||||||
||||||||||||||||||||||||||
||||||||||||||||||||||||||
||||||||||||||||||||||||||
|||0015<br>A<br>B<br>M<br>|||||||||||||||||||||||
||Lead tip<br>.<br><br><br><br>||||||||||||||||||||||||
||||||||||||||||||||||||||
|**SYMBOL**<br>**MILL**<br>**MIN.**|||**IMETERS**|||**INCHES**||||**NOTES**||||**SYMBOL**<br>E<br>E1<br>E2<br>e<br>e1<br>H1<br>L<br>L1<br>Ø P<br>Q<br>|||**MILLIMETERS**<br>**MIN.**<br>**MAX.**|||||**INCHES**||**NOTES**|
||||**MAX.**||**MIN.**||**MAX.**|||||||||||||**MAX.**||**MIN.**|**MAX.**||
|A<br>4.25|||4.65||0.167||0.183||||||||||10.11|||10.51||0.398|0.414|3,6|
|A1<br>1.14|||1.40||0.045||0.055||||||||||6.86|||8.89||0.270|0.350|6|
|A2<br>2.56|||2.92||0.101||0.115||||||||||-|||0.76||-|0.030|7|
|b<br>0.69|||1.01||0.027||0.040||||||||||2.41|||2.67||0.095|0.105||
|b1<br>0.38|||0.97||0.015||0.038|||4|||||||4.88|||5.28||0.192|0.208||
|b2<br>1.20|||1.73||0.047||0.068||||||||||6.09|||6.48||0.240|0.255|6,7|
|b3<br>1.14|||1.73||0.045||0.068|||4|||||||13.52|||14.02||0.532|0.552||
|c<br>0.36|||0.61||0.014||0.024||||||||||3.32|||3.82||0.131|0.150|2|
|c1<br>0.36|||0.56||0.014||0.022|||4|||||||3.54|||3.73||0.139|0.147||
|D<br>14.85|||15.25||0.585||0.600|||3|||||||2.60|||3.00||0.102|0.118||
|D1<br>8.38|||9.02||0.330||0.355||||||||||90° to 93°|||||90° to 93°|||
|D2<br>11.68|||12.88||0.460||0.507|||6|||||||||||||||



## **Notes** 

- (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 

- (2) Lead dimension and finish uncontrolled in L1 

- (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body 

   - (7) Dimensions E2 x H1 define a zone where stamping and singulation irregularities are allowed 

   - (8) Outline conforms to JEDEC TO-220, except A2 (maximum) and D2 (minimum) where dimensions are derived from the actual package outline 

- (4) Dimension b1, b3 and c1 apply to base metal only 

- (5) Controlling dimensions: inches 

- (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 

Document Number: 95222 For technical questions within your region, please contact one of the following: Revision: 08-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 

www.vishay.com 1 

**Legal Disclaimer Notice** Vishay 

www.vishay.com 

**==> picture [59 x 48] intentionally omitted <==**

## **Disclaimer** 

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product.  To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. 

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications.  Such statements are not binding statements about the suitability of products for a particular application.  It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time.  All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts.  Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. 

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. 

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.  Product names and markings noted herein may be trademarks of their respective owners. 

_**© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_ 

Revision: 08-Feb-17 

Document Number: 91000 

**1** 



## Links

- [View this product on Novapart](https://novapart.co/products/VS-12TTS08HM3/thyristor-800-v-15-ma-8-a-125-to-220ab-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/vishay/vs-12tts08hm3/scr-thyristor-aec-q101-12-5a-to/dp/2989363)
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