# Thyristor, 800 V, 15 mA, 6.5 A, 10 A, TO-263AB, 3 Pins

![Product image](https://novapart.co/image/farnell:2909599/)

**URL**: https://novapart.co/products/VS-10TTS08S-M3/thyristor-800-v-15-ma-65-a-10-to-263ab-3-pins
**SKU**: VS-10TTS08S-M3
**Manufacturer**: VISHAY
**Category**: Semiconductors - Discretes || Thyristors || Thyristors - SCRs
**Price**: €0.8170
**Stock**: 1000+
**Lead Time**: 148 days (indicative)

## Description

Peak Repetitive Off-State Voltage, Vdrm:800V; Gate Trigger Current Max, Igt:15mA; Current It av:6.5A; On State RMS Current IT(rms):10A; Thyristor Case Style:TO-263AB; No. of Pins:3Pins

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Thyristor Mounting | Surface Mount |
| Holding Current Max | 30mA |
| On State Rms Current | 10A |
| Thyristor Case Style | TO-263AB |
| Average On State Current | 6.5A |
| Gate Trigger Current Max | 15mA |
| Gate Trigger Voltage Max | 1V |
| Operating Temperature Max | 125°C |
| Peak Non Repetitive Surge Current | 95A |
| Peak Repetitive Off State Voltage | 800V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2909599/)

**VS-10TTS08S-M3 Series** 

www.vishay.com 

## , VISHAY, ~~—~~ 

## Vishay Semiconductors 

## **Thyristor High Voltage Surface Mount Phase Control SCR, 10 A** 

## **FEATURES** 

**==> picture [202 x 89] intentionally omitted <==**

**----- Start of picture text -----**<br>
2, 4<br>Anode<br>2<br>1<br>1 3<br>3<br>Cathode Gate<br>**----- End of picture text -----**<br>


**D[2] PAK (TO-263AB)** 

- Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 

- Designed and qualified according JEDEC[®] -JESD 47 

- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 

## **APPLICATIONS** 

- Input rectification (soft start) 

## **PRIMARY CHARACTERISTICS** 

|**PRIMARY CHARACTERISTICS**|**PRIMARY CHARACTERISTICS**|
|---|---|
|IT(AV)|6.5 A|
|VDRM/VRRM|800 V|
|VTM|< 1.15 V|
|IGT|15 mA|
|TJ|-40 to +125 °C|
|Package|D2PAK (TO-263AB)|
|Circuit configuration|Single SCR|



- Vishay input diodes, switches and output rectifiers which are available in identical package outlines 

## **DESCRIPTION** 

The VS-10TTS08S-M3 high voltage series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 °C junction temperature. 

## **OUTPUT CURRENT IN TYPICAL APPLICATIONS** 

|**OUTPUT CURRENT IN TYPICAL APPLICATIONS**|**OUTPUT CURRENT IN TYPICAL APPLICATIONS**|**OUTPUT CURRENT IN TYPICAL APPLICATIONS**|**OUTPUT CURRENT IN TYPICAL APPLICATIONS**|
|---|---|---|---|
|**APPLICATIONS**|**SINGLE-PHASE BRIDGE**|**THREE-PHASE BRIDGE**|**UNITS**|
|NEMA FR-4 or G-10 glass fabric-based epoxy<br>with 4 oz. (140 μm) copper|2.5|3.5|A|
|Aluminum IMS, RthCA= 15 °C/W|6.3|9.5||
|Aluminum IMS with heatsink, RthCA= 5 °C/W|14.0|18.5||



## **Note** 

- TA = 55 °C, TJ = 125 °C, footprint 300 mm[2] 

## **MAJOR RATINGS AND CHARACTERISTICS** 

|**MAJOR RATINGS AND CHARACTERISTICS**|**MAJOR RATINGS AND CHARACTERISTICS**|**MAJOR RATINGS AND CHARACTERISTICS**|**MAJOR RATINGS AND CHARACTERISTICS**|
|---|---|---|---|
|**PARAMETER**|**TEST CONDITIONS**|**VALUES**|**UNITS**|
|IT(AV)|Sinusoidal waveform|6.5|A|
|IRMS||10||
|VRRM/VDRM||800|V|
|ITSM||110|A|
|VT|6.5 A, TJ= 25 °C|1.15|V|
|dV/dt||150|V/μs|
|dI/dt||100|A/μs|
|TJ|Range|-40 to +125|°C|



## **VOLTAGE RATINGS** 

||**VRRM, MAXIMUM**|**VDRM, MAXIMUM PEAK**|**IRRM/IDRM**|
|---|---|---|---|
|**PART NUMBER**|**PEAK REVERSE VOLTAGE**|**DIRECT VOLTAGE**|**AT 125 °C**|
||**V**|**V**|**mA**|
|VS-10TTS08S-M3|800|800|1.0|



Document Number: 96410 

**1** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-10TTS08S-M3 Series** 

Vishay Semiconductors 

www.vishay.com 

|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|||||
|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**VALUES**|**UNITS**|
|Maximum average on-state current|IT(AV)|TC= 112 °C, 180° conduction half sine wave||6.5|A|
|Maximum RMS on-state current|IT(RMS)|||10||
|Maximum peak, one-cycle,<br>non-repetitive surge current|ITSM|10 ms sine pulse, rated VRRMapplied, TJ= 125 °C||95||
|||10 ms sine pulse, no voltage reapplied, TJ= 125 °C||110||
|Maximum I2t for fusing|I2t|10 ms sine pulse, rated VRRMapplied, TJ= 125 °C||45|A2s|
|||10 ms sine pulse, no voltage reapplied, TJ= 125 °C||64||
|Maximum I2√t for fusing|I2√t|t = 0.1 ms to 10 ms, no voltage reapplied, TJ= 125 °C||640|A2√s|
|Maximum on-state voltage drop|VTM|6.5 A, TJ= 25 °C||1.15|V|
|On-state slope resistance|rt|TJ= 125 °C||17.3|mΩ|
|Threshold voltage|VT(TO)|||0.85|V|
|Maximum reverse and direct leakage current|IRM/IDM|TJ= 25 °C|VR= rated VRRM/VDRM|0.05|mA|
|||TJ= 125 °C||1.0||
|Typical holding current|IH|Anode supply = 6 V, resistive load, initial IT= 1 A,<br>TJ= 25 °C||30||
|Maximum latching current|IL|Anode supply = 6 V, resistive load, TJ= 25 °C||50||
|Maximum rate of rise of off-state voltage|dV/dt|TJ= TJmax., linear to 80 %, VDRM= Rg- k = open|||V/μs|
|Maximum rate of rise of turned-on current|dI/dt|||100|A/μs|
|||||||
|**TRIGGERING**||||||
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**VALUES**|**UNITS**|
|Maximum peakgate power|PGM|||8.0|W|
|Maximum averagegate power|PG(AV)|||2.0||
|Maximum peak positivegate current|+IGM|||1.5|A|
|Maximum peak negativegate voltage|-VGM|||10|V|
|Maximum required DC gate current to trigger|IGT|Anode supply = 6 V, resistive load, TJ= - 65 °C||20|mA|
|||Anode supply = 6 V, resistive load, TJ= 25 °C||15||
|||Anode supply = 6 V, resistive load, TJ= 125 °C||10||
|Maximum required DC gate<br>voltage to trigger|VGT|Anode supply = 6 V, resistive load, TJ= - 65 °C||1.2|V|
|||Anode supply = 6 V, resistive load, TJ= 25 °C||1||
|||Anode supply = 6 V, resistive load, TJ= 125 °C||0.7||
|Maximum DCgate voltage not to trigger|VGD|TJ= 125 °C, VDRM= rated value||0.2||
|Maximum DC gate current not to trigger|IGD|||0.1|mA|



|**SWITCHING**|**SWITCHING**|**SWITCHING**|||
|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**VALUES**|**UNITS**|
|Typical turn-on time|tgt|TJ= 25 °C|0.8|μs|
|Typical reverse recovery time|trr|TJ= 125 °C|3||
|Typical turn-off time|tq||100||



Document Number: 96410 

**2** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-10TTS08S-M3 Series** 

www.vishay.com 

## Vishay Semiconductors 

|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|**THERMAL - MECHANICAL SPECIFICATIONS**|||
|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**VALUES**|**UNITS**|
|Maximum junction and storage<br>temperature range|TJ, TStg||-40 to +125|°C|
|Maximum thermal resistance,<br>junction to case|RthJC|DC operation|1.5|°C/W|
|Typical thermal resistance,<br>junction to ambient (PCB mount)|RthJA(1)||40||
|Approximate weight|||2|g|
||||0.07|oz.|
|Markingdevice||Case style D2PAK (TO-263AB)|10TTS08S||



## **Note** 

> (1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W. For recommended footprint and soldering techniques refer to application note #AN-994 

**==> picture [163 x 392] intentionally omitted <==**

**----- Start of picture text -----**<br>
125<br>10TTS08<br>R         (DC) = 1.5 K/W thJC<br>120<br>Conduction Angle<br>115<br>30°<br>60°<br>110 90 °<br>120°<br>180 °<br>105<br>0 1 2 3 4 5 6 7<br>Average On-state Current (A)<br>Fig. 1 - Current Rating Characteristics<br>125<br>10TTS08<br>R         (DC) = 1.5 K/W thJC<br>120<br>Conduction Period<br>115<br>30°<br>60°<br>110 90°<br>120°<br>180° DC<br>105<br>0 2 4 6 8 10 12<br>Average On-state Current (A)<br>Fig. 2 - Current Rating Characteristics<br>Maximum Allowable Case Temperature (°C)<br>Maximum Allowable Case Temperature (°C)<br>**----- End of picture text -----**<br>


**==> picture [175 x 391] intentionally omitted <==**

**----- Start of picture text -----**<br>
8<br>180°<br>7 120°<br>90°<br>6 60°<br>30°<br>5<br>4 RMS Limit<br>3<br>Conduction Angle<br>2<br>10TTS08<br>1 T  = 125 J ° C<br>0<br>0 1 2 3 4 5 6 7<br>Average On-state Current (A)<br>Fig. 3 - On-State Power Loss Characteristics<br>12<br>DC<br>180°<br>10<br>120°<br>90°<br>8 60 °<br>30°<br>6<br>RMS Limit<br>4 Conduction Period<br>2 10TTS08<br>T   = 125°CJ<br>0<br>0 2 4 6 8 10 12<br>Average On-state Current (A)<br>Fig. 4 - On-State Power Loss Characteristics<br>Maximum Average On-state Power Loss (W)<br>Maximum Average On-state Power Loss (W)<br>**----- End of picture text -----**<br>


Document Number: 96410 

**3** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-10TTS08S-M3 Series** 

www.vishay.com 

## Vishay Semiconductors 

**==> picture [180 x 166] intentionally omitted <==**

**----- Start of picture text -----**<br>
110<br>At any rated load condition and with<br>100 rated V rrm  applied following surge.Initial Tj = 150 °C<br>at 60 Hz 0.0083 s<br>90 at 50 Hz 0.0100 s<br>80<br>70<br>60<br>50 VS-10TTS08<br>40<br>1 10 100<br>Number of Equal Amplitude Half Cycle<br>Current Pulses (N)<br>Peak Half Sine Wave Forward Current (A)<br>**----- End of picture text -----**<br>


Fig. 5 - Maximum Non-Repetitive Surge Current 

**==> picture [177 x 161] intentionally omitted <==**

**----- Start of picture text -----**<br>
120<br>Maximum non-repetitive surge current<br>110 versus pulse train duration.<br>Initial Tj = Tj max.<br>100 No voltage reapplied<br>Rated Vrrm reapplied<br>90<br>80<br>70<br>60<br>50 VS-10TTS08<br>40<br>0.01 0.1 1 10<br>Pulse Train Duration (s)<br>Peak Half Sine Wave Forward Current (A)<br>**----- End of picture text -----**<br>


Fig. 6 - Maximum Non-Repetitive Surge Current 

**==> picture [296 x 372] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>10TTS08<br>100<br>10 T   J = 25°C<br>T  J = 125°C<br>1<br>0.5 1 1.5 2 2.5 3 3.5<br>Instantaneous On-state Voltage (V)<br>Fig. 7 - On-State Voltage Drop Characteristics<br>10<br>Steady State Value<br>(DC Operation)<br>1 D = 0.50<br>D = 0.33<br>D = 0.25<br>D = 0.17<br>D = 0.08<br>0.1<br>Single Pulse<br>10TTS08<br>0.01<br>0.0001 0.001 0.01 0.1 1<br>Square Wave Pulse Duration (s)<br>Instantaneous On-state Current (A)<br>thJC<br>Transient Thermal Impedance Z         (°C/W)<br>**----- End of picture text -----**<br>


Fig. 8 - Thermal Impedance ZthJC Characteristics 

Document Number: 96410 

**4** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**VS-10TTS08S-M3 Series** 

www.vishay.com 

## Vishay Semiconductors 

## **ORDERING INFORMATION TABLE** 

|**Device code**|**VS-**|**VS-**|||**10**<br>**T**<br>**T**|**S**|**08**|**S**|**TRL**|**-M3**||
|---|---|---|---|---|---|---|---|---|---|---|---|
|||1|||3<br>2<br>4|5|6|7|8|9||
||**1**||-||Vishay Semiconductors product|||||||
||**2**||-||Current rating, RMS value|||||||
||**3**||-||Circuit configuration:|||||||
||||||T = single thyristor|||||||
||**4**||-||Package:|||||||
||||||T = D2PAK (TO-263AB)|||||||
||**5**||-||Type of silicon:|||||||
||||||S =converter grade|||||||
||**6**||-||Voltage code x 100|= VRRM||||||
||**7**||-||S = surface mountable|||||||
||**8**||-||Tape and reel option:|||||||
||||||TRL = tape and reel (left oriented)|||||||
||||||TRR = tape and reel (right oriented)|||||||
||**9**||-||-M3 = halogen-free, RoHS-compliant, and||||terminations lead (Pb)-free|||



|**ORDERING INFORMATION** (Example)|**ORDERING INFORMATION** (Example)|**ORDERING INFORMATION** (Example)|||
|---|---|---|---|---|
|**PREFERRED P/N**|**BASE QUANTITY**|||**PACKAGING DESCRIPTION**|
|VS-10TTS08S-M3|50|||Antistatic plastic tubes|
|VS-10TTS08STRL-M3|800|||13" diameter plastic tape and reel|
|VS-10TTS08STRR-M3|800|||13" diameter plastic tape and reel|
||||||
|**LINKS TO RELATED DOCUMENTS**|||||
|Dimensions|||www.vishay.com/doc?96164||
|Part markinginformation|||www.vishay.com/doc?95444||
|Packaginginformation|||www.vishay.com/doc?96424||



Document Number: 96410 

**5** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Outline Dimensions** 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

## Vishay Semiconductors 

## **D[2] PAK** 

## **DIMENSIONS** in millimeters and inches 

**==> picture [496 x 342] intentionally omitted <==**

**----- Start of picture text -----**<br>
Conforms to JEDEC [®]  outline D [2] PAK (SMD-220) B<br>A Pad layout<br>(2)(3) A (E)<br>c2 11.00<br>E MIN.<br>(0.43)<br>A<br>(3) L1 4<br>9.65<br>MIN.<br>(0.38)<br>(D1) (3)<br>Detail A<br>D 17.90 (0.70)<br>H 15.00 (0.625)<br>(2)<br>1 2 3<br>3.81<br>MIN.<br>L2 (0.15)<br>B B 2.32<br>MIN.<br>(0.08)<br>A<br>2.64 (0.103)<br>2 x b2 C E1 (3) 2.41 (0.096)<br>c<br>2 x b View A - A<br>0.010 M A M B ± 0.004 M B<br>2 x e<br>Base<br>Plating (4) Metal<br>H b1, b3<br>Gauge<br>plane<br>(c) c1 (4)<br>0° to 8° B<br>L Seating<br>plane<br>L3 A1<br>(b, b2)<br>Lead tip L4 Section B - B and C - C<br>Detail “A” Scale: None<br>Rotated 90 °CW<br>Scale: 8:1<br>**----- End of picture text -----**<br>


|**SYMBOL**|**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**|**NOTES**||**SYMBOL**|**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**|**NOTES**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
||**MIN.**|**MAX.**|**MIN.**|**MAX.**||||**MIN.**|**MAX.**|**MIN.**|**MAX.**||
|A|4.06|4.83|0.160|0.190|||D1|6.86|8.00|0.270|0.315|3|
|A1|0.00|0.254|0.000|0.010|||E|9.65|10.67|0.380|0.420|2, 3|
|b|0.51|0.99|0.020|0.039|||E1|7.90|8.80|0.311|0.346|3|
|b1|0.51|0.89|0.020|0.035|4||e|2.54 BSC||0.100 BSC|||
|b2|1.14|1.78|0.045|0.070|||H|14.61|15.88|0.575|0.625||
|b3|1.14|1.73|0.045|0.068|4||L|1.78|2.79|0.070|0.110||
|c|0.38|0.74|0.015|0.029|||L1|-|1.65|-|0.066|3|
|c1|0.38|0.58|0.015|0.023|4||L2|1.27|1.78|0.050|0.070||
|c2|1.14|1.65|0.045|0.065|||L3|0.25 BSC||0.010 BSC|||
|D|8.51|9.65|0.335|0.380|2||L4|4.78|5.28|0.188|0.208||



## **Notes** 

- (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 

- (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body 

- (3) Thermal pad contour optional within dimension E, L1, D1 and E1 

- (4) Dimension b1 and c1 apply to base metal only 

- (5) Datum A and B to be determined at datum plane H 

- (6) Controlling dimension: inches 

- (7) Outline conforms to JEDEC® outline TO-263AB 

Revision: 13-Jul-17 

**1** 

Document Number: 96164 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Legal Disclaimer Notice** Vishay 

www.vishay.com 

## **Disclaimer** 

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. 

Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. 

Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. 

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. 

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 

_**© 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_ 

Revision: 01-Jan-2023 

Document Number: 91000 

**1** 



## Links

- [View this product on Novapart](https://novapart.co/products/VS-10TTS08S-M3/thyristor-800-v-15-ma-65-a-10-to-263ab-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/vishay/vs-10tts08s-m3/scr-thyristor-10a-800v-to-263ab/dp/2909599)
---

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