# Power MOSFET, P Channel, 100 V, 120 mA, 12 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:2857808/)

**URL**: https://novapart.co/products/VP2110K1-G/power-mosfet-p-channel-100-v-120-ma-12-ohm-sot-23
**SKU**: VP2110K1-G
**Manufacturer**: MICROCHIP
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4590
**Stock**: 1000+
**Lead Time**: 57 days (indicative)

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:-120mA; Drain Source Voltage Vds:-100V; On Resistance Rds(on):9ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3.

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (04-Feb-2026) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 360mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 120mA |
| Drain Source On State Resistance | 12ohm |
| Gate Source Threshold Voltage Max | 3.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2857808/)

_**Su ertex inc. p**_ 

**VP2110** 

## **P-Channel Enhancement-Mode Vertical DMOS FET** 

## **Features** 

- Free from secondary breakdown 

- Low power drive requirement 

- Ease of paralleling 

- Low CISS and fast switching speeds 

- Excellent thermal stability 

- Integral source-to-drain diode 

- High input impedance and high gain 

## **Applications** 

- Motor controls 

- Converters 

- Amplifiers 

- Switches 

- Power supply circuits 

## **General Description** 

The Supertex VP2110 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. 

Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. 

- Drivers (relays, hammers, solenoids, lamps, 

   - memories, displays, bipolar transistors, etc.) 

## **Ordering Information** 

## **Product Summary** 

**Part Number Package Option Packing BV /BV RDS(ON) ID(ON DSS DGS (max) (min)** VP2110K1-G TO-236AB (SOT-23) 3000/Reel _-G denotes a lead (Pb)-free / RoHS compliant package._ ~~ao~~ -100V 12Ω -500mA _Contact factory for Wafer / Die availablity. Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant._ **Pin Configuration Absolute Maximum Ratings Parameter Value DRAIN** Drain-to-source voltage BVDSS Drain-to-gate voltage BVDGS **SOURCE** Gate-to-source voltage ±20V **GATE** ~~—e~~ Operating and storage temperature -55[O] C to +150[O] C **TO-236AB (SOT-23)** _Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground._ **Product Marking** 

## **Product Marking** 

**Typical Thermal Resistance P1AW** W = Code for Week Sealed = “Green” Packaging **Package** _**θja** Package may or may not include the following marks: Si or_ TO-236AB (SOT-23) 203[O] C/W ~~oe~~ **TO-236AB (SOT-23)** 

_**Supertex inc. www.supertex.com**_ 

_Doc.# DSFP-VP2110 B082313_ 

**VP2110** 

## **Thermal Characteristics** 

|**Package**|**ID**<br>**(continuous)****_†_**|**ID**<br>**(pulsed)**|**Power Dissipation**<br>**@TA = 25OC**|**IDR**<br>**_†_**|**IDRM**|
|---|---|---|---|---|---|
|TO-236AB (SOT-23)|-120mA|-400mA|0.36W|-120mA|-400mA|



_**Notes:**_ 

_†    ID (continuous) is limited by max rated Tj._ 

## **Electrical Characteristics** _(TA = 25[O] C unless otherwise specified)_ 

|**Sym**|**Parameter**|**Min**|**Typ**|**Max**|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|BVDSS|Drain-to-Source breakdown voltage|-100|-|-|V|VGS= 0V, ID= -1.0mA|
|VGS(th)|Gate threshold voltage|-1.5|-|-3.5|V|VGS= VDS, ID= -1.0mA|
|ΔVGS(th)|Change in VGS(th)with temperature|-|5.8|6.5|mV/OC|VGS= VDS, ID= -1.0mA|
|IGSS|Gate body leakage|-|-1.0|-100|nA|VGS= ± 20V, VDS= 0V|
|IDSS|Zero Gate voltage Drain current|-|-|-10|µA|VGS= 0V, VDS= Max Rating|
|||-|-|-1.0|mA|VDS= 0.8 Max Rating,<br>VGS= 0V, TA= 125°C|
|ID(ON)|On-state Drain current|-0.5|-1.0|-|A|VGS= -10V, VDS= -25V|
|RDS(ON)|Static Drain-to-Source on-state resistance|-|11|15|Ω|VGS= -5.0V, ID= -100mA|
|||-|9.0|||VGS= -10V, ID= -500mA|
|ΔRDS(ON)|Change in RDS(ON)with temperature|-||||VGS= -10V, ID= -500mA|
|GFS|Forward transductance|150|200||mmho  V|mmho  VDS= -25V, ID= -500mA|
|CISS|Input capacitance|-|45|60|pF|VGS= 0V,<br>VDS= -25V,<br>f = 1.0MHz|
|COSS|Common Source output capacitance|-|22|30|||
|CRSS|Reverse transfer capacitance|-|3.0|8.0|||
|td(ON)|Turn-on delay time|-|4.0|5.0|ns|VDD= -25V,<br>ID= -500mA,<br>RGEN= 25Ω|
|tr|Rise time|-|5.0|8.0|||
|td(OFF)|Turn-off delay time|-|5.0|9.0|||
|tf|Fall time|-|4.0|8.0|||
|VSD|Diode forward voltage drop|-|-1.2|-2.0|V|VGS= 0V, ISD= -500mA|
|trr|Reverse recovery time|-|400|-|ns|VGS= 0V, ISD= -500mA|



_**Notes:**_ 

_1.  All D.C. parameters 100% tested at 25[O] C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)_ 

_2.  All A.C. parameters sample tested._ 

## **Switching Waveforms and Test Circuit** 

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**----- Start of picture text -----**<br>
0V Pulse<br>10%<br>Generator<br>INPUT<br>R<br>-10V 90% GEN<br>t t<br>(ON) (OFF)<br>D.U.T.<br>td(ON) tr td(OFF) tf INPUT<br>OUTPUT<br>0V<br>OUTPUT 90% 90% RL<br>10% 10%<br>VDD<br>VDD<br>**----- End of picture text -----**<br>


_**Supertex inc.**_ 

_Doc.# DSFP-VP2110 B082313_ 

_**www.supertex.com**_ 

2 

**VP2110** 

## **Typical Performance Curves** 

## **BVDSS Variation with Temperature** 

**==> picture [195 x 186] intentionally omitted <==**

**----- Start of picture text -----**<br>
-1.1<br>-1.0<br>-0.9<br>-50                     0                     50                   100                  150<br>Tj ( [O] C)<br>(normalized)<br>DSS<br>BV<br>**----- End of picture text -----**<br>


## **Transfer Characteristics** 

**==> picture [195 x 401] intentionally omitted <==**

**----- Start of picture text -----**<br>
-1.0<br>VDS = -25V<br>-0.6<br>-0.4<br>-0.2<br>0<br>0                 -2                -4                -6                -8               -10<br>VGS (volts)<br>Capacitance vs. Drain-to-Source Voltage<br>100<br>f = 1.0MHz<br>75<br>50<br>CISS<br>25<br>CRSS<br>0<br>0                     -10                   -20                   -30                  -40<br>VDS (volts)<br>TA = -55OC<br>COSS<br>25OC<br>125OC<br>(amperes)<br>ID<br>C (picofarads)<br>**----- End of picture text -----**<br>


## **Capacitance vs. Drain-to-Source Voltage** 

## **On-Resistance vs. Drain Current** 

**==> picture [215 x 613] intentionally omitted <==**

**----- Start of picture text -----**<br>
20<br>16<br>VGS = -5.0V<br>12<br>VGS = -10V<br>8<br>4<br>0<br>0                -0.2             -0.4             -0.6            -0.8             -1.0<br>ID (amperes)<br> V(th) and RDS Variation with Temperature<br>2.0<br>1.4<br>RDS(ON) @ -10V, 0.5A<br>1.6<br>1.2<br>1.2<br>1.0<br>0.8<br>0.8  V(th) @ 1.0mA<br>0.4<br>0.6  0<br>-50                     0                     50                   100                  150<br>Tj ( [O] C)<br>Gate Drive Dynamic Characteristics<br>-10<br>VDS = -10V<br>-6  VDS = -40V<br>101pF<br>-4<br>-2<br>35pF<br>0<br>0                                            1.0                                            2.0<br>QG (nanocoulombs)<br>(ohms)<br>DS(ON)<br>R<br>(normalized) (normalized)<br>GS(th)  DS(ON)<br>V R<br>(volts)<br>GS<br>V<br>**----- End of picture text -----**<br>


_**Supertex inc.**_ 

_Doc.# DSFP-VP2110 B082313_ 

_**www.supertex.com**_ 

3 

**VP2110** 

## **Typical Performance Curves** _**(cont.)**_ 

## **Output Characteristics** 

**==> picture [204 x 191] intentionally omitted <==**

**----- Start of picture text -----**<br>
-2.0<br>-1.6<br>-1.2<br>VGS = -10V<br>-9V<br>-0.8<br>-8V<br>-7V<br>-0.4  -6V<br>-5V<br>-4V<br>0<br>0                 -10                -20               -30              -40               -50<br>VDS (volts)<br>(amperes)<br>ID<br>**----- End of picture text -----**<br>


## **Transconductance vs. Drain Current** 

**==> picture [206 x 420] intentionally omitted <==**

**----- Start of picture text -----**<br>
250<br>VDS = -25V  TA = -55 [O] C<br>200<br>25 [O] C<br>150<br>125 [O] C<br>100<br>50<br>0<br>0                -0.2              -0.4              -0.6              -0.8              -1.0<br>ID (amperes)<br>Maximum Rated Safe Operating Area<br>-1.0<br>TO-236AB (pulsed)<br>TO-236AB (DC)<br>-0.1<br>-0.01<br>TA = 25 [O] C<br>-0.001<br>-0.1                            -1.0                            -10                           -100<br>VDS (volts)<br>(millisiemens)<br>FS<br>G<br>(amperes)<br>ID<br>**----- End of picture text -----**<br>


**==> picture [125 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
Saturation Characteristics<br>**----- End of picture text -----**<br>


**==> picture [209 x 650] intentionally omitted <==**

**----- Start of picture text -----**<br>
-1.0<br>VGS = -10V<br>-0.8<br>-9V<br>-8V<br>-0.6<br>-7V<br>-0.4<br>-6V<br>-5V<br>-0.2<br>-4V<br>-3V<br>-0<br>0                  -2                 -4                 -6                 -8                -10<br>VDS (volts)<br>Power Dissipation vs. Ambient Temperature<br>1.0<br>0.5<br>TO-236AB<br>0<br>0              25             50             75            100          125           150<br>TA ( [O] C)<br>Thermal Response Characteristics<br>1.0<br>0.8<br>TO-236AB<br>0.6  PD = 0.36W<br>TA = 25 [O] C<br>0.4<br>0.2<br>0<br>0.001              0.01               0.1                 1.0                 10<br>tp (seconds)<br>(amperes)<br>ID<br>(watts)<br>D<br>P<br>Thermal Resistance (normalized)<br>**----- End of picture text -----**<br>


## **Power Dissipation vs. Ambient Temperature** 

_**Supertex inc.**_ 

_Doc.# DSFP-VP2110 B082313_ 

_**www.supertex.com**_ 

4 

**VP2110** 

## **3-Lead TO-236AB (SOT-23) Package Outline (K1)** _**2.90x1.30mm body, 1.12mm height (max), 1.90mm pitch**_ 

**==> picture [450 x 220] intentionally omitted <==**

**----- Start of picture text -----**<br>
D<br>3<br>E1 E<br>Gauge<br>0.25<br>Plane<br>1 2 L Seating<br>Plane<br>e b L1<br>e1<br>Top View View B<br>**----- End of picture text -----**<br>


**==> picture [459 x 114] intentionally omitted <==**

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View B<br>A<br>A2<br>A<br>Seating<br>Plane<br>A1<br>Side View  A View A - A<br>**----- End of picture text -----**<br>


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Symbol A A1 A2 b D E E1 e e1 L L1 θ<br>MIN 0.89 0.01 0.88 0.30 2.80 2.10 1.20 0.20 [†] 0 [O]<br>Dimension 0.95 1.90 0.54<br>NOM - - 0.95 - 2.90 - 1.30 0.50 -<br>(mm) BSC BSC REF<br>MAX 1.12 0.10 1.02 0.50 3.04 2.64 1.40 0.60 8 [O]<br>**----- End of picture text -----**<br>


_JEDEC Registration TO-236, Variation AB, Issue H, Jan. 1999. † This dimension differs from the JEDEC drawing._ _**Drawings not to scale.**_ 

_**Supertex Doc.#:** DSPD-3TO236ABK1, Version C041309._ 

_(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.)_ 

_**Supertex inc.**_ does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” _**Supertex inc.**_ does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the _**Supertex inc.**_ (website: http//www.supertex.com) 

©2013 _**Supertex inc.**_ All rights reserved. Unauthorized use or reproduction is prohibited. 

_**Supertex inc.**_ 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 _**www.supertex.com**_ 

_Doc.# DSFP-VP2110 B082313_ 

5 



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