# Power MOSFET, N Channel, 80 V, 18 A, 0.028 ohm, TO-220, Through Hole
**URL**: https://novapart.co/products/VNP35N07-E/power-mosfet-n-channel-80-v-18-a-0028-ohm-to-220
**SKU**: VNP35N07-E
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.8400
**Stock**: 1000+
**Lead Time**: 106 days (indicative)
## Description
Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.028ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power D
## Specifications
| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 125W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220 |
| Drain Source Voltage Vds | 80V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 18A |
| Drain Source On State Resistance | 0.028ohm |
| Gate Source Threshold Voltage Max | 3V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:1739428/)
## **VNP35N07-E, VNB35N07-E, VNV35N07-E**
OMNIFET: fully autoprotected Power MOSFET
**Datasheet** - **production data**
- Diagnostic feedback through input pin
- ESD protection
**==> picture [146 x 100] intentionally omitted <==**
**----- Start of picture text -----**
3
2 3 1
1
TO-220 D2PAK
10 “AN AY 1
PowerSO-10
**----- End of picture text -----**
## **Features**
**==> picture [198 x 61] intentionally omitted <==**
**----- Start of picture text -----**
||||||
|---|---|---|---|---|
|Type|Vclamp|RDS(on)|Ilim|
|VNP35N07-E|70 V|0.028|Ω|35 A|
|VNB35N07-E|70 V|0.028|Ω|35 A|
|VNV35N07-E|70 V|0.028|Ω|35 A|
**----- End of picture text -----**
- Direct access to the gate of the Power MOSFET (analog driving)
- Compatible with standard Power MOSFET
- Standard TO-220 package
- Compliant with 2002/95/EC European directive
## **Description**
The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower[®] technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications.
Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.
Fault feedback can be detected by monitoring the voltage at the input pin.
- Automotive qualified
- Linear current limitation
- Thermal shutdown
- Short circuit protection
- Integrated clamp
- Low current drawn from input pin
**Table 1. Device summary**
**==> picture [366 x 81] intentionally omitted <==**
**----- Start of picture text -----**
||||||
|---|---|---|---|---|
|Order codes|
|Package|
|Tube|Tape and reel|
|TO-220|VNP35N07-E|VNP35N07TR-E|
|D|[2]|PAK|VNB35N07-E|VNB35N07TR-E|
|PowerSO-10|VNV35N07-E|VNV35N07TR-E|
**----- End of picture text -----**
February 2015 DocID023779 Rev 3
This is information on a product in full production.
_www.st.com_
1/24
**Contents**
**VNP35N07-E, VNB35N07-E, VNV35N07-E**
|**Contents**|**Contents**||
|---|---|---|
|**1**|**Block**|**diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5**|
|**2**|**Electrical specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6**||
||2.1|Absolute maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
||2.2|Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
||2.3|Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7|
|**3**|**Protection features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16**||
|**4**|**Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17**||
||4.1|TO-220 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17|
||4.2|D2PAK package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19|
||4.3|PowerSO-10 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21|
|**5**|**Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23**||
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DocID023779 Rev 3
**VNP35N07-E, VNB35N07-E, VNV35N07-E**
**List of tables**
## **List of tables**
|Table|1.|Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
|---|---|---|
|Table|2.|Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|Table|3.|Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|Table|4.|Off . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7|
|Table|5.|On . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7|
|Table|6.|Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7|
|Table|7.|Switching . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7|
|Table|8.|Source drain diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8|
|Table|9.|Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8|
|Table|10.|TO-220 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17|
|Table|11.|D2PAK mechanical data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19|
|Table|12.|PowerSO-10 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21|
|Table|13.|Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23|
DocID023779 Rev 3
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**List of figures**
**VNP35N07-E, VNB35N07-E, VNV35N07-E**
## **List of figures**
|Figure|1.|Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5|
|---|---|---|
|Figure|2.|Switching times test circuits for resistive load. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9|
|Figure|3.|Input charge test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9|
|Figure|4.|Unclamped inductive load test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10|
|Figure|5.|Test circuit for inductive load switching & diode recovery times. . . . . . . . . . . . . . . . . . . . . 10|
|Figure|6.|Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11|
|Figure|7.|Unclamped inductive waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11|
|Figure|8.|Thermal impedance for TO-220 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12|
|Figure|9.|Derating curve . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12|
|Figure|10.|Static drain-source on resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12|
|Figure|11.|Static drain-source on resistance vs input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12|
|Figure|12.|Output characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12|
|Figure|13.|Transconductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12|
|Figure|14.|Static drain-source on resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13|
|Figure|15.|Input charge vs input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13|
|Figure|16.|Normalized on resistance vs temperature (part 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13|
|Figure|17.|Normalized on resistance vs temperature (part 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13|
|Figure|18.|Normalized input threshold voltage vs temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13|
|Figure|19.|Capacitance variations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13|
|Figure|20.|Turn-on current slope (part 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14|
|Figure|21.|Turn-on current slope (part 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14|
|Figure|22.|Turn-off drain-source voltage slope (part 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14|
|Figure|23.|Turn-off drain-source voltage slope (part 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14|
|Figure|24.|Switching time resistive load (part 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14|
|Figure|25.|Switching time resistive load (part 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14|
|Figure|26.|Current limit vs junction temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15|
|Figure|27.|Source drain diode forward characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15|
|Figure|28.|Switching time resistive load. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15|
|Figure|29.|Step response current Limit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15|
|Figure|30.|Thermal impedance for D2PAK/ PowerSO-10 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15|
|Figure|31.|TO-220 package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18|
|Figure|32.|D2PAK package dimensions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20|
|Figure|33.|PowerSO-10 package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22|
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**VNP35N07-E, VNB35N07-E, VNV35N07-E**
**Block diagram**
## **1 Block diagram**
## **Figure 1. Block diagram**
**==> picture [396 x 266] intentionally omitted <==**
1. PowerSO-10 pin configuration: INPUT = 6, 7, 8, 9, 10; SOURCE = 1, 2, 4, 5; DRAIN = TAB.
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**Electrical specification**
**VNP35N07-E, VNB35N07-E, VNV35N07-E**
## **2 Electrical specification**
## **2.1 Absolute maximum rating**
Stressing the device above the rating listed in _Table 3_ may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to the conditions in table below for extended periods may affect device reliability.
**Table 2. Absolute maximum ratings**
||**Table 2. Absolute maximum**|**ratings**|**ratings**||
|---|---|---|---|---|
|**Symbol**|**Parameter**|**Value**||**Unit**|
|||**D2PAK**
**PowerSO-10**|**TO-220**||
|VDS|Drain-source voltage (Vin= 0)|Internally clamped||V|
|Vin|Input voltage|18||V|
|ID|Drain current|Internally limited||A|
|IR|Reverse DC output current|-50||A|
|Vesd|Electrostatic Discharge (C = 100 pF; R = 1.5 KΩ)|2000||V|
|Ptot|Total dissipation at TC= 25°C|125|40|W|
|Tj|Operating junction temperature|Internally limited||°C|
|Tc|Case operating temperature|Internally limited||°C|
|Tstg|Storage temperature|-55 to 150||°C|
## **2.2 Thermal data**
**Table 3. Thermal data**
|**Symbol**|**Parameter**|**Value**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|---|
|||**PowerSO-10**|**D2PAK**|**TO-220**||
|Rthj-case|Thermal Resistance Junction-case (max)|1|1|3.12|°C/W|
|Rthj-amb|Thermal Resistance Junction-ambient (max)|50|62.5|62.5|°C/W|
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**VNP35N07-E, VNB35N07-E, VNV35N07-E**
**Electrical specification**
## **2.3 Electrical characteristics**
Tcase = 25°C unless otherwise specified.
**Table 4. Off**
|||**Table 4. Off**|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|VCLAMP|Drain-source clamp voltage|ID= 200 mA; Vin= 0 V|60|70|80|V|
|VCLTH|Drain-source clamp threshold
voltage|ID= 2 mA;Vin= 0 V|55|||V|
|VINCL|Input-source reverse clamp
voltage|Iin= -1 mA|-1||-0.3|V|
|IDSS|Zero input voltage drain
current (Vin= 0 V)|VDS= 13 V; Vin= 0 V|||50|mA|
|||VDS= 25 V; Vin= 0 V|||200|µA|
|IISS|Supply current from input pin|VDS= 0 V; Vin= 10 V||250|500|μA|
**Table 5. On**
|||**Table 5. On**|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|VIN(th)
(1)|Input threshold voltage|VDS= Vin; ID+Iin= 1 mA|0.8|—|3|V|
|RDS(on)
(1)|Static drain-source on
resistance|Vin= 10 V;ID= 18 A||—|0.028|Ω|
|||Vin= 5 V; ID= 18 A||—|0.035|Ω|
1. Pulsed: Pulse duration = 300 ms, duty cycle 1.5%.
**Table 6. Dynamic**
|||**Table 6. Dynamic**|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|gfs
(1)|Forward
transconductance|VDS= 13 V; ID= 18 A|20|25||S|
|COSS|Output capacitance|VDS= 13 V; f = 1 MHz; Vin= 0 V||980|1400|pF|
1. Pulsed: Pulse duration = 300 ms, duty cycle 1.5%.
**Table 7. Switching**
|||**Table 7. Switching**|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|td(on)
(1)|Turn-on delay time|VDD= 28 V; Id= 18 A;
Vgen= 10 V; Rgen= 10Ω
(see_Figure 2_)|—|100|200|ns|
|tr
(1)|Rise time||—|350|600|ns|
|td(off)
(1)|Turn-off delay time||—|650|1000|ns|
|tf
(1)|Fall time||—|200|350|ns|
|td(on)
(1)|Turn-on delay time|VDD= 28 V; Id= 18 A;
Vgen= 10 V; Rgen= 1000Ω
(see_Figure 2_)|—|500|800|μs|
|tr
(1)|Rise time||—|2.7|4.2|μs|
|td(off)
(1)|Turn-off delay time||—|10|16|μs|
|tf
(1)|Fall time||—|4.3|6.5|μs|
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**Electrical specification**
**VNP35N07-E, VNB35N07-E, VNV35N07-E**
**Table 7. Switching (continued)**
|**Symbol**|**Parameter**|**Test Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|
|(di/dt)on
(1)
|Turn-on current slope|VDD= 28 V; ID= 18 A; Vin= 10 V;
Rgen= 10Ω|—|60||A/μs|
|Qi
(1)|Total input charge|VDD= 12 V; ID= 18 A; Vin= 10 V|—|100||nC|
1. Parameters guaranteed by design/characterization.
## **Table 8. Source drain diode**
|**Symbol**|**Parameter**|**Test Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|
|VSD
(1)|Forward on voltage|ISD= 18 A; Vin= 0 V|—||1.6|V|
|trr
(2)|Reverse recovery time|ISD= 18 A; di/dt = 100 A/μs;
VDD= 30 V; TJ= 25°C
(see_Figure 5_)|—|250||ns|
|Qrr
(2)|Reverse recovery charge||—|1||μC|
|IRRM
(2)|Reverse recovery current||—|8||A|
1. Pulsed: Pulse duration = 300 ms, duty cycle 1.5%.
2. Parameters guaranteed by design/characterization.
## **Table 9. Protection**
|||**Table 9. Protection**|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|Ilim|Drain current limit|VIN= 10 V; VDS= 13 V|25|35|45|A|
|||VIN= 5 V; VDS= 13 V|25|35|45|A|
|tdlim
(1)|Step response current
limit|Vin= 10 V||35|60|μs|
|||Vin= 5 V||70|140|μs|
|Tjsh
(1)|Overtemperature
shutdown||150|||°C|
|Tjrs
(1)|Overtemperature reset||135|||°C|
|Igf
(1)|Fault sink current|VIN= 10 V; VDS= 13 V||50||mA|
|||VIN= 5 V; VDS= 13 V||20||mA|
|Eas
(1)|Single pulse avalanche
energy|Starting Tj= 25 °C;
VDD= 20 V; Vin= 10 V;
Rgen= 1 KΩ; L = 10 mH|2.5|||J|
1. Parameters guaranteed by design/characterization.
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**VNP35N07-E, VNB35N07-E, VNV35N07-E**
**Electrical specification**
**Figure 2. Switching times test circuits for resistive load**
**==> picture [385 x 166] intentionally omitted <==**
## **Figure 3. Input charge test circuit**
**==> picture [340 x 194] intentionally omitted <==**
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**Electrical specification**
**VNP35N07-E, VNB35N07-E, VNV35N07-E**
**==> picture [228 x 11] intentionally omitted <==**
**----- Start of picture text -----**
Figure 4. Unclamped inductive load test circuits
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**Figure 5. Test circuit for inductive load switching & diode recovery times**
**==> picture [361 x 195] intentionally omitted <==**
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**VNP35N07-E, VNB35N07-E, VNV35N07-E**
**Electrical specification**
## **Figure 6. Waveforms**
**==> picture [382 x 190] intentionally omitted <==**
## **Figure 7. Unclamped inductive waveforms**
**==> picture [317 x 259] intentionally omitted <==**
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**Electrical specification**
**VNP35N07-E, VNB35N07-E, VNV35N07-E**
**Figure 8. Thermal impedance for TO-220**
**==> picture [163 x 157] intentionally omitted <==**
**Figure 10. Static drain-source on resistance**
**==> picture [163 x 153] intentionally omitted <==**
**Figure 12. Output characteristics**
**==> picture [163 x 156] intentionally omitted <==**
**Figure 9. Derating curve**
**==> picture [163 x 159] intentionally omitted <==**
**Figure 11. Static drain-source on resistance vs input voltage**
**==> picture [163 x 153] intentionally omitted <==**
**Figure 13. Transconductance**
**==> picture [163 x 154] intentionally omitted <==**
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**VNP35N07-E, VNB35N07-E, VNV35N07-E**
**Electrical specification**
**==> picture [405 x 601] intentionally omitted <==**
**----- Start of picture text -----**
Figure 14. Static drain-source on Figure 15. Input charge vs input voltage
resistance
Figure 16. Normalized on resistance vs Figure 17. Normalized on resistance vs
temperature (part 1) temperature (part 2)
Figure 18. Normalized input threshold Figure 19. Capacitance variations
voltage vs temperature
**----- End of picture text -----**
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**Electrical specification**
**VNP35N07-E, VNB35N07-E, VNV35N07-E**
**==> picture [392 x 11] intentionally omitted <==**
**----- Start of picture text -----**
Figure 20. Turn-on current slope (part 1) Figure 21. Turn-on current slope (part 2)
**----- End of picture text -----**
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**==> picture [394 x 23] intentionally omitted <==**
**----- Start of picture text -----**
Figure 22. Turn-off drain-source voltage Figure 23. Turn-off drain-source voltage
slope (part 1) slope (part 2)
**----- End of picture text -----**
**==> picture [163 x 147] intentionally omitted <==**
**==> picture [163 x 147] intentionally omitted <==**
**==> picture [393 x 23] intentionally omitted <==**
**----- Start of picture text -----**
Figure 24. Switching time resistive load Figure 25. Switching time resistive load
(part 1) (part 2)
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**Electrical specification**
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Figure 26. Current limit vs junction
temperature
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**Figure 28. Switching time resistive load**
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**Figure 27. Source drain diode forward characteristics**
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**Figure 29. Step response current Limit**
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**Figure 30. Thermal impedance for D[2] PAK/ PowerSO-10**
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**Protection features**
**VNP35N07-E, VNB35N07-E, VNV35N07-E**
## **3 Protection features**
During normal operation, the Input pin is electrically connected to the gate of the internal power MOSFET. The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50 KHz. The only difference from the user‘s standpoint is that a small DC current (Iiss) flows into the Input pin in order to supply the internal circuitry.
The device integrates:
- Overvoltage Clamp Protection: internally set at 70V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability. This feature is mainly important when driving inductive loads.
- Linear Current Limiter Circuit: limits the drain current Id to Ilim whatever the Input pin voltage. When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold Tjsh.
- Overtemperature and Short Circuit Protection: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs at minimum 150°C. The device is automatically restarted when the chip temperature falls below 135°C.
- Status Feedback: in the case of an overtemperature fault condition, a Status Feedback is provided through the input pin. The internal protection circuit disconnects the input from the gate and connects it instead to ground via an equivalent resistance of 100 Ω.
The failure can be detected by monitoring the voltage at the Input pin, which will be close to ground potential.
Additional features of this devices are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit (with a small increase in RDS(on)).
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**Package information**
## **4 Package information**
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com.
ECOPACK[®] is an ST trademark.
## **4.1 TO-220 package information**
**Table 10. TO-220 mechanical data**
||**Table 10. TO-220 mechanical data**|**Table 10. TO-220 mechanical data**|**Table 10. TO-220 mechanical data**|
|---|---|---|---|
|**Dim.**|**mm.**|||
||**Min.**|**Typ**|**Max.**|
|A|4.40||4.60|
|b|0.61||0.88|
|b1|1.14||1.70|
|c|0.48||0.70|
|D|15.25||15.75|
|D1||1.27||
|E|10||10.40|
|e|2.40||2.70|
|e1|4.95||5.15|
|F|1.23||1.32|
|H1|6.20||6.60|
|J1|2.40||2.72|
|L|13||14|
|L1|3.50||3.93|
|L20||16.40||
|L30||28.90||
|∅P|3.75||3.85|
|Q|2.65||2.95|
|Package weight|1.9Gr. (Typ.)|||
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**Package information**
**VNP35N07-E, VNB35N07-E, VNV35N07-E**
**Figure 31. TO-220 package dimensions**
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**Package information**
## **4.2 D[2] PAK package information**
**Table 11. D[2] PAK mechanical data**
||**Table 11. D2PAK mechanical data**|**Table 11. D2PAK mechanical data**|**Table 11. D2PAK mechanical data**|
|---|---|---|---|
|**Dim.**|**mm.**|||
||**Min.**|**Typ**|**Max.**|
|A|4.40||4.60|
|A1|0.03||0.23|
|b|0.70||0.93|
|b2|1.14||1.70|
|c|0.45||0.60|
|c2|1.23||1.36|
|D|8.95||9.35|
|D1|7.50|7.75|8.00|
|D2|1.10|1.30|1.50|
|E|10||10.40|
|E1|8.50|8.70|8.90|
|E2|6.85|7.05|7.25|
|e||2.54||
|e1|4.88||5.28|
|H|15||15.85|
|J1|2.49||2.69|
|L|2.29||2.79|
|L1|1.27||1.40|
|L2|1.30||1.75|
|R||0.4||
|V2|0°||8°|
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**Package information**
**VNP35N07-E, VNB35N07-E, VNV35N07-E**
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Figure 32. D [2] PAK package dimensions
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**Package information**
## **4.3 PowerSO-10 mechanical data**
**Table 12. PowerSO-10 mechanical data**
||**Table 12. PowerSO-10 mechanical data**|**Table 12. PowerSO-10 mechanical data**|**Table 12. PowerSO-10 mechanical data**|
|---|---|---|---|
|**Dim.**|**mm.**|||
||**Min.**|**Typ.**|**Max.**|
|A|||3.70|
|A1|0.00||0.10|
|A2|3.40||3.60|
|A3|1.25||1.35|
|b|0.40||0.53|
|c|0.35||0.55|
|D|9.40||9.60|
|D1(1)|7.40||7.60|
|E|13.80||14.40|
|E1(1)|9.30||9.50|
|E2|7.20||7.60|
|E3|5.90||6.10|
|e||1.27||
|L|0.95||1.65|
|<|0°||8°|
1. Resin protrusion not included (max value: 0.20 mm per side)
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**Package information**
**VNP35N07-E, VNB35N07-E, VNV35N07-E**
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Figure 33. PowerSO-10 package dimensions
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**Revision history**
## **5 Revision history**
**Table 13. Document revision history**
|**Date**|**Revision**|**Changes**|
|---|---|---|
|09-Jan-2014|1|Initial release.|
|07-May-2014|2|Added D2PAK package and related details.
_Table 2: Absolute maximum ratings_:
– Ptot: updated value
_Table 3: Thermal data_:
– Rthj-case: updated value|
|02-Feb-2015|3|Added PowerSO-10 package and related details.
Updated_Chapter 4: Package information_|
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**VNP35N07-E, VNB35N07-E, VNV35N07-E**
## **IMPORTANT NOTICE – PLEASE READ CAREFULLY**
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2015 STMicroelectronics – All rights reserved
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## Links
- [View this product on Novapart](https://novapart.co/products/VNP35N07-E/power-mosfet-n-channel-80-v-18-a-0028-ohm-to-220)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/vnp35n07-e/mosfet-omnifet-70v-35a-to-220/dp/1739428)
---
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