# THYRISTOR DIODE MODULE, 1.6KV, 31A

![Product image](https://novapart.co/image/farnell:3930059/)

**URL**: https://novapart.co/products/VGO36-16IO7/thyristor-diode-module-16kv-31a
**SKU**: VGO36-16IO7
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || Thyristors || Thyristors - SCR Modules
**Price**: €13.2300
**Stock**: 10+
**Lead Time**: 204 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | To Be Advised |
| No. Of Pins | 6Pins |
| Product Range | - |
| Scr Module Type | Bridge Rectifier, Single Phase - SCR / Diode |
| Thyristor Mounting | Panel |
| On State Rms Current | 31A |
| Thyristor Case Style | Module |
| Average Forward Current | 40A |
| Gate Trigger Current Max | 65mA |
| Gate Trigger Voltage Max | 1V |
| Operating Temperature Max | 125°C |
| Repetitive Peak Reverse Voltage | 1.6kV |
| Peak Repetitive Off State Voltage | 1.6kV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3930059/)

**VGO 36-16io7** 

## **Single Phase Rectifier Bridge** 

**I = 36 A dAV VRRM = 1600 V** 

Preliminary data 

K **VRSM VRRM Type** A **VDSM VDRM** H N V V G **1700 1600 VGO 36-16io7** D ~~n~~ a 

|**Symbol**|**Test Conditions**|||**Maximum Ratings**|**Maximum Ratings**|**Maximum Ratings**|
|---|---|---|---|---|---|---|
|**IdAV**|TH= 85°C, module||||36|A|
|**IdAVM**|module||||40|A|
|**IFRMS, ITRMS**|per leg||||31|A|
|**IFSM, ITSM**|TVJ= 45°C;|t = 10 ms|t = 10 ms (50 Hz), sine||320|A|
||VR= 0 V|t = 8.3 ms|t = 8.3 ms (60 Hz), sine||350|A|
||TVJ= TVJM|t = 10 ms|t = 10 ms (50 Hz), sine||280|A|
||VR= 0 V|t = 8.3 ms|t = 8.3 ms (60 Hz), sine||310|A|
|**I2t**|TVJ= 45°C|t = 10 ms|t = 10 ms (50 Hz), sine||500|A2s|
||VR= 0 V|t = 8.3 ms|t = 8.3 ms (60 Hz), sine||520|A2s|
||TVJ= TVJM|t = 10 ms|t = 10 ms (50 Hz), sine||390|A2s|
||VR= 0 V|t = 8.3 ms|t = 8.3 ms (60 Hz), sine||400|A2s|
|**(di/dt)cr**|TVJ= 125°C|repetitive, IT= 50 A|||150|A/μs|
||f = 50 Hz, tP= 200μs||||||
||VD= 2/3 VDRM||||||
||IG= 0.3 A,|non repetitive, IT= 1/2 • I||= 1/2 • IdAV|500|A/μs|
||diG/dt = 0.3 A/μs||||||
|**(dv/dt)cr**|TVJ= TVJM;  VDR= 2/3 VDRM||||1000|V/μs|
||RGK=∞; method 1 (linear voltage rise)||||||
|**VRGM**|||||10|V|
|**PGM**|TVJ= TVJM|tp=|30μs|≤|10|W|
||IT= ITAVM|tp=<br>500μs||≤|5|W|
|||tp=<br>10 ms||≤|1|W|
|**PGAVM**|||||0.5|W|
|**TVJ**||||-40...+125||°C|
|**TVJM**|||||125|°C|
|**Tstg**||||-40...+125||°C|
|**VISOL**|50/60 Hz, RMS|t = 1 min|||2500|V~|
||IISOL ≤1 mA|t = 1 s|||3000|V~|
|**Md**|Mounting torque (M4)||||1.5 - 2|Nm|
||||||14 - 18|lb.in.|
|**Weight**|typ.||||18|g|



## **Features** 

- Package with DCB ceramic base plate 

- Isolation voltage 3000 V~ 

- Planar passivated chips 

- Low forward voltage drop 

- Leads suitable for PC board soldering 

## **Applications** 

- Supplies for DC power equipment 

- Input rectifiers for PWM inverter 

- Battery DC power supplies 

- Field supply for DC motors 

## **Advantages** 

- Easy to mount with two screws 

- Space and weight savings 

- Improved temperature and power cycling capability 

- Small and light weight 

Data according to IEC 60747 refer to a single diode/thyristor unless otherwise stated for resistive load at bridge output. IXYS reserves the right to change limits, test conditions and dimensions. 

IXYS reserves the right to change limits, test conditions and dimensions. 

20100705a 

© 2010 IXYS All rights reserved 

1 - 2 

**VGO 36-16io7** 

**==> picture [508 x 422] intentionally omitted <==**

**----- Start of picture text -----**<br>
|||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
|Symbol|Test Conditions|Characteristic Values|10|
|IR, ID|VR = VRRM; VD = VDRM|TTVJVJ = T = 25VJM°C|≤≤|0.35|mAmA|V|2: I3: I1: I|GTGTGT|,, T, T T|VJ VJ VJ|= 125°C=   25°C=  -40°C|
|VT, VF|IT, IF = 45 A; TVJ = 25°C|≤|1.45|V|VG|
|VT0|For power-loss calculations only (TVJ = 125°C)|0.85|V|
|rT|13|mΩ|2|3|
|1|6|
|VGT|VD = 6 V;|TVJ = 25°C|≤|1.0|V|1|
|TVJ = -40°C|≤|1.2|V|4|5|
|IGT|VD = 6 V;|TVJ = 25°C|≤|65|mA|
|TVJ = -40°C|≤|80|mA|
|TVJ = 125°C|≤|50|mA|
|VIGDGD|TTVJVJ = T = TVJMVJM;;|VVDD = 2/3 V = 2/3 VDRMDRM|≤≤|0.25|mAV|IGD, TVJ = 125°C|6: P5: P|4: P|GAV GM  GM  =    1 W=  10 W|= 0.5 W|
|IL|IG = 0.3 A; tG = 30 μs;|TVJ = 25°C|≤|150|mA|0.1|1|10|100|1000|mA|
|diG/dt = 0.3 A/μs;|TVJ = -40°C|≤|200|mA|IG|
|TVJ = 125°C|≤|100|mA|Fig. 1|Gate trigger range|
|IH|TVJ = 25°C; VD = 6 V; RGK = ∞|≤|100|mA|
|tgd|TVJ = 25°C; VD = 1/2 VDRM|≤|2|μs|1000|TVJ|= 25°C|
|IG = 0.3 A; diG/dt = 0.3 A/μs|
|tq|TVJ = 125°C, IT = 15 A, tP = 300 μs, VR = 100 V|typ.|150|μs|t|μ|s|
|di/dt = -10 A/μs, dv/dt = 20 V/μs, VD = 2/3 VDRM|gd|
|typ.|Limit|
|RthJC|per thyristor (diode); DC current|1.4|K/W|100|
|per module|0.35|K/W|
|RthJK|per thyristor (diode); DC current|2.0|K/W|
|per module|0.5|K/W|
|dS|Creepage distance on surface|12.6|mm|10|
|dA|Creepage distance in air|6.3|mm|
|a|Max. allowable acceleration|50|m/s|[2]|
|1|
|10|100|mA|1000|
|IG|

**----- End of picture text -----**<br>


## **Dimensions in mm (1 mm = 0.0394")** 

Fig. 2 Gate controlled delay time tgd 

**==> picture [135 x 126] intentionally omitted <==**

**==> picture [162 x 50] intentionally omitted <==**

IXYS reserves the right to change limits, test conditions and dimensions. 

© 2010 IXYS All rights reserved 

20100705a 

2 - 2 



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- [Supplier page](https://es.farnell.com/littelfuse/vgo36-16io7/thyristor-diode-module-1-6kv-31a/dp/3930059)
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