# Bridge Rectifier, Single Phase, 1.6 kV, 45 A, PWS-B, 4 Pins, 1.14 V

![Product image](https://novapart.co/image/farnell:2674830/)

**URL**: https://novapart.co/products/VBO50-16NO7/bridge-rectifier-single-phase-16-kv-45-a-pws-b-4
**SKU**: VBO50-16NO7
**Manufacturer**: IXYS SEMICONDUCTOR
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Bridge Rectifier Diodes
**Price**: €25.9300
**Stock**: 10+

## Description

No. of Phases:Single Phase; Repetitive Reverse Voltage Vrrm Max:1.6kV; Forward Current If(AV):45A; Bridge Rectifier Case Style:PWS-B; Forward Voltage VF Max:1.14V; No. of Pins:4Pin

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (12-Jan-2017) |
| No. Of Pins | 4Pins |
| No. Of Phases | Single Phase |
| Product Range | - |
| Forward Voltage Max | 1.14V |
| Forward Surge Current | 750A |
| Average Forward Current | 45A |
| Bridge Rectifier Mounting | Panel Mount |
| Operating Temperature Max | 150°C |
| Bridge Rectifier Case Style | PWS-B |
| Repetitive Peak Reverse Voltage | 1.6kV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2674830/)

## **VBO50-16NO7** 

## **Standard Rectifier Module** 

||**3~**<br>**1~**||
|---|---|---|
||**Rectifier**||
|RRM<br>1600<br>V<br>=||V|
|I|45<br>DAV<br>=|A|
|I|FSM<br>750<br>=|A|



## 1~ Rectifier Bridge 

## **Part number** 

VBO50-16NO7 

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## **Features / Advantages:** 

- Package with DCB ceramic 

- Improved temperature and power cycling 

- Planar passivated chips 

- Very low forward voltage drop 

- Very low leakage current 

## **Applications:** 

- Diode for main rectification 

- For one phase bridge configurations 

- Supplies for DC power equipment 

- Input rectifiers for PWM inverter 

- Battery DC power supplies 

- Field supply for DC motors 

## PWS-B 

## **Package:** 

- Industry standard outline 

- RoHS compliant 

- Easy to mount with two screws 

- Base plate: Aluminium internally DCB isolated 

- Advanced power cycling 

IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20130306a 

© 2013 IXYS all rights reserved 

**VBO50-16NO7** 

|Ratings<br>**Rectifier**|Ratings<br>**Rectifier**|Ratings<br>**Rectifier**|Ratings<br>**Rectifier**|Ratings<br>**Rectifier**|Ratings<br>**Rectifier**|
|---|---|---|---|---|---|
|Symbol<br>Definition<br>Conditions||min.|typ.|max.|Unit|
|VRSM<br>_max. non-repetitive reverse blocking voltage_<br>T    =   25°C<br>VJ||||1700|V|
|VRRM<br>_max. repetitive reverse blocking voltage_<br>T    =   25°C<br>VJ||||1600|V|
|IR<br>_reverse current_|V    =          V<br>R<br>T    =   25°C<br>VJ<br>T    =       °C<br>VJ<br>V    =          V<br>R<br>1600<br>150<br>1600|||100<br>1.5|mA<br>µA|
|V F<br>_forward voltage drop_|T    =   25°C<br>VJ<br>I  =          A<br>F<br>20<br>I  =          A<br>F<br>40|||1.03<br>1.14|V<br>V|
||T    =       °C<br>VJ<br>I  =          A<br>F<br>20<br>I  =          A<br>F<br>40<br>125|||0.92<br>1.06|V<br>V|
|I<br>DAV<br>_bridge output current_|T  =       °C<br>C<br>85<br>T    =       °C<br>VJ<br>150<br>d =<br>rectangular<br>0.5|||45|A|
|VF0<br>T    =       °C<br>VJ<br>150<br>r F<br>_threshold voltage_<br>_slope resistance_<br>_for power loss calculation only_||||0.76<br>6.9|V<br>mΩ|
|R<br>_thermal resistance junction to case_<br>thJC||||2.7|K/W|
|R<br>_thermal resistance case to heatsink_<br>thCH|||0.4||K/W|
|Ptot<br>_total power dissipation_|T    =   25°C<br>C|||46|W|
|IFSM<br>_max. forward surge current_|t =  10 ms; (50 Hz), sine<br>T    =   45°C<br>VJ<br>V    = 0 V<br>R<br>t = 8,3 ms; (60 Hz), sine|||750<br>810|A<br>A|
||T    =       °C<br>VJ<br>150<br>V    = 0 V<br>R<br>t =  10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine|||640<br>690|A<br>A|
|I²t<br>_value for fusing_|T    =   45°C<br>V    = 0 V<br>t =  10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine<br>VJ<br>R|||2.82<br>2.73|kA²s<br>kA²s|
||T    =       °C<br>150<br>V    = 0 V<br>t =  10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine<br>VJ<br>R|||2.05<br>1.98|kA²s<br>kA²s|
|CJ<br>_junction capacitance_|V  =          V;<br>400<br>T    =   25°C<br>f = 1 MHz<br>R<br>VJ||10||pF|



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IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20130306a 

© 2013 IXYS all rights reserved 

**VBO50-16NO7** 

|Symbol<br>Definition<br>Conditions|min.|typ.|max.|Unit|
|---|---|---|---|---|
|I RMS<br>_RMS current_<br>per terminal|~~TS~~|~~TS~~|100|A|
|Tstg<br>_storage temperature_|-40<br>~~TS~~<br>~~a~~|~~TS~~<br>~~a~~|125|°C|
|TVJ<br>_virtual junction temperature_|-40<br>~~a~~<br>~~a~~|~~a~~<br>~~a~~|150|°C|
|Weight|~~a~~|193<br>~~a~~||g|
|M D<br>_mounting torque_<br>M T<br>_terminal torque_|4.25<br>2.5<br>~~a~~<br>~~|~~|~~a~~<br>~~|~~|5.75<br>3.5|Nm<br>Nm|
|d Spp/App<br>_creepage distance on surface | striking distance through air_<br>d Spb/Apb<br>_terminal to backside_<br>_terminal to terminal_|11.0<br>7.5<br>~~|~~<br>~~|~~|~~|~~<br>~~|~~||mm<br>mm|
|V<br>t = 1 second<br>t = 1 minute<br>_isolation voltage_<br>50/60 Hz, RMS; I      ≤ 1 mA<br>ISOL<br>ISOL|2500<br>3000<br>~~|~~|~~|~~||V<br>V|



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Circuit<br>Made in Germany Diagram<br>Product<br>Number e XXXX-XXXX s [YYCW Lot#]<br>Date Code<br>**----- End of picture text -----**<br>


Ordering Part Number Marking on Product Delivery Mode Quantity Code No. ~~ee~~ Standard VBO50-16NO7 VBO50-16NO7 Box 10 472271 

~~|~~ **Equivalent Circuits for Simulation** _* on die level_ T    =VJ 150 °C I V0 ~~R~~ 0 Rectifier ~~>~~ V 0 max _threshold voltage_ 0.76 V R0 max _slope resistance *_ 5.7 mΩ 

IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20130306a 

© 2013 IXYS all rights reserved 

**VBO50-16NO7** 

## **Outlines PWS-B** 

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9<br>10<br>M5<br>24 20 16<br>60<br>72<br>~<br>60 36 18 5.3 10<br>~<br>2<br>28 26<br>5.5<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
- ~ ~ +<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20130306a 

© 2013 IXYS all rights reserved 

**VBO50-16NO7** 

## **Rectifier** 

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**----- Start of picture text -----**<br>
100 3000<br>50 Hz<br>0.8 x V RRM VR = 0 V<br>600<br>80 2500<br>IF 60 500 2000<br>IFSM TVJ = 45°C I [2] t TVJ = 45°C<br>[A]<br>40 1500<br>[A]<br>400 [A [2] s] TVJ = 130°C<br>20 T VJ = 125°C TVJ = 130°C 1000<br>150°C<br>TVJ = 25°C<br>0 300 500<br>0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 [-3] 10 [-2] 10 [-1] 10 [0] 1 10<br>VF [V] t [s] t [ms]<br>Fig. 1 Forward current vs. Fig. 2 Surge overload current Fig. 3 I [2] t vs. time per diode<br>voltage drop per diode vs. time per diode<br>24 60<br>RthJA:<br>DC = DC =<br>0.6 KW<br>1 1<br>0.5 0.8 KW<br>18 0.4 1 KW 0.5<br>0.33 2 KW 40 0.4<br>0.17 4 KW I 0.33<br>Ptot 0.08 8 KW F(AV)M 0.17<br>12<br>[A] 0.08<br>[W]<br>20<br>6<br>0 0<br>0 5 10 15 20 0 25 50 75 100 125 150 0 25 50 75 100 125 150<br>IF(AV)M [A] TA  [°C] TC [°C]<br>Fig. 4 Power dissipation vs. forward current Fig. 5 Max. forward current vs.<br>and ambient temperature per diode case temperature per diode<br>3.0<br>2.5<br>Constants for ZthJC calculation:<br>2.0 i Rth (K/W) ti (s)<br>ZthJC<br>1 0.040 0.010<br>1.5<br>[K/W] 2 0.150 0.030<br>1.0 3 0.610 1.350<br>4 1.900 14.00<br>0.5<br>0.0<br>1 10 100 1000 10000 100000<br>t [ms]<br>Fig. 6 Transient thermal impedance junction to case vs. time per diode<br>**----- End of picture text -----**<br>


Fig. 5 Max. forward current vs. case temperature per diode 

IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20130306a 

© 2013 IXYS all rights reserved 



## Links

- [View this product on Novapart](https://novapart.co/products/VBO50-16NO7/bridge-rectifier-single-phase-16-kv-45-a-pws-b-4)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/ixys-semiconductor/vbo50-16no7/diode-bridge-rect-1-ph-1-6kv-pws/dp/2674830)
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