# Dual MOSFET, N Channel, 20 V, 20 V, 1.5 A, 1.5 A, 0.18 ohm

![Product image](https://novapart.co/image/farnell:2706719/)

**URL**: https://novapart.co/products/US6K4TR/dual-mosfet-n-channel-20-v-15-a-018-ohm
**SKU**: US6K4TR
**Manufacturer**: ROHM
**Category**: Semiconductors - Discretes || FETs || Dual MOSFETs
**Price**: €0.1490
**Stock**: 10+
**Lead Time**: 113 days (indicative)

## Description

Transistor Polarity:Dual N Channel; Continuous Drain Current Id:1.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.13ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Po

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 6Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Transistor Case Style | TUMT |
| Operating Temperature Max | - |
| Power Dissipation N Channel | 1W |
| Power Dissipation P Channel | 1W |
| Drain Source Voltage Vds N Channel | 20V |
| Drain Source Voltage Vds P Channel | 20V |
| Continuous Drain Current Id N Channel | 1.5A |
| Continuous Drain Current Id P Channel | 1.5A |
| Drain Source On State Resistance N Channel | 0.18ohm |
| Drain Source On State Resistance P Channel | - |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2706719/)

US6K4 

Transistors 

## 1.8V Drive Nch+Nch MOSFET 

## **US6K4** 

## � **Structure** 

Silicon N-channel MOSFET 

� **Features** 

1) Two Nch MOSFETs are put in TUMT6 package. 

2) High-speed switching, Low On-resistance. 3) 1.8V drive. 

## � **Applications** Switching 

- **Dimensions** (Unit : mm) 

**==> picture [186 x 130] intentionally omitted <==**

**----- Start of picture text -----**<br>
TUMT6<br>Abbreviated symbol : K04<br>0.2Max.<br>**----- End of picture text -----**<br>


- **Packaging specifications** � **Inner circuit** 

|Type|Package|Taping|
|---|---|---|
||Code|TR|
||Basic ordering unit (pieces)|3000|
|US6K4|||



## � **Absolute maximum ratings** (Ta=25°C) 

**==> picture [158 x 132] intentionally omitted <==**

**----- Start of picture text -----**<br>
(6) (5) (4)<br>∗ 1<br>∗ 2<br>∗ 2<br>∗ 1<br>(1) Tr1 Source<br>(2) Tr1 Gate<br>(3) Tr2 Drain<br>(1) (2) (3) (4) Tr2 Source<br>∗ 1 ESD PROTECTION DIODE (5) Tr2 Gate<br>∗ 2 BODY DIODE (6) Tr1 Drain<br>**----- End of picture text -----**<br>


## <It is the same ratings for the Tr1 and Tr2> 

|Parameter||Symbol|Limits|
|---|---|---|---|
|Drain-source voltage||VDSS|20|
|Gate-source voltage||VGSS|±10|
|Drain current|Continuous|ID|±1.5|
||Pulsed|∗1<br>IDP|±3.0|
|Source current<br>(Body diode)|Continuous|IS|0.6|
||Pulsed|∗1<br>ISP|2.4|
|Total power dissipation||∗2<br>PD|1.0|
||||0.7|
|Channel temperature||Tch|150|
|Range of storage temperature||Tstg|−55 to+150|



- ∗ 1 Pw ≤ 10 µ s, Duty cycle ≤ 1% 

- ∗ 2 Mounted on a ceramic board 

## � **Thermal resistance** 

|�**Thermal resistance**|||
|---|---|---|
|Parameter|Symbol|Limits|
|Channel to ambient|Rth(ch-a)<br>∗|125|
|||179|



- ∗ Mounted on a ceramic board 

Rev.A 

1/3 

US6K4 

Transistors 

- **Electrical characteristics** (Ta=25°C) 

## <It is the same characteristics for the Tr1 and Tr2> 

|Parameter|Symbol|Symbol|Symbol|Min.|Typ.|Max.|Unit|Conditions|
|---|---|---|---|---|---|---|---|---|
|Gate-source leakage|IGSS|||−|−|±10|µA|VGS=±10V, VDS=0V|
|Drain-source breakdown voltage|V(BR) DSS|||20|−|−|V|ID= 1mA, VGS=0V|
|Zero gate voltage drain current|IDSS|||−|−|1|µA|VDS= 20V, VGS=0V|
|Gate threshold voltage|VGS (th)|||0.3|−|1.0|V|VDS= 10V, ID= 1mA|
|Static drain-source on-state<br>resistance|RDS (on)<br>∗|||−|130|180|mΩ|ID= 1.5A, VGS= 4.5V|
|||||−|170|240|mΩ|ID= 1.5A, VGS= 2.5V|
|||||−|220|310|mΩ|ID= 0.8A, VGS= 1.8V|
|Forward transfer admittance||Yfs|∗|1.6|−|−|S|VDS= 10V, ID= 1.5A|
|Input capacitance|Ciss|||−|110|−|pF|VDS= 10V<br>VGS=0V<br>f=1MHz|
|Output capacitance|Coss|||−|18|−|pF||
|Reverse transfer capacitance|Crss|||−|15|−|pF||
|Turn-on delay time|td (on)<br>∗|||−|5|−|ns|VDD10V<br>ID= 1.0A<br>VGS= 4.5V<br>RL= 10Ω<br>RGS=10Ω|
|Rise time|tr<br>∗|||−|5|−|ns||
|Turn-off delay time|td (off)<br>∗|||−|20|−|ns||
|Fall time|tf<br>∗|||−|3|−|ns||
|Total gate charge|Qg<br>∗|||−|1.8|2.5|nC|VDD  10V<br>VGS= 4.5V<br>ID= 1.5A|
|Gate-sourcecharge|Qgs<br>∗|||−|0.3|−|nC||
|Gate-draincharge|Qgd<br>∗|||−|0.3|−|nC||
|∗Pulsed|||||||||



## � **Body diode characteristics** (Source-drain) (Ta=25°C) 

## <It is the same characteristics for the Tr1 and Tr2> 

|Parameter|Symbol|Min.|Typ.|Max.|Unit|Conditions|
|---|---|---|---|---|---|---|
|Forward voltage|VSD|−|−|1.2|V|IS= 0.6A, VGS=0V|



Rev.A 

2/3 

US6K4 

## Transistors 

## � **Electrical characteristics curves** 

**==> picture [434 x 535] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000 Ta=25 ° C 1000 Ta=25 ° C 5 Ta=25 ° C<br>f=1MHz VDD=10V VDD=10V<br>VGS=0V VGS=4.5V ID=1.5A<br>RG=10 Ω 4 RG=10 Ω<br>Pulsed Pulsed<br>100 tf<br>3<br>100 Ciss<br>td(off)<br>2<br>10<br>td(on)<br>1<br>tr<br>Coss<br>Crss<br>10 1 0<br>0.01 0.1 1 10 100 0.01 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0<br>DRAIN-SOURCE VOLTAGE : VDS (V) DRAIN CURRENT : ID (A) TOTAL GATE CHARGE : Qg (nC)<br>Fig.1  Typical Capacitance Fig.2  Switching Characteristics Fig.3  Dynamic Input Characteristics<br>                  vs. Drain-Source Voltage<br>10 500 10<br>VDS=10V Ta=25 ° C VGS=0V<br>Pulsed 450 Pulsed Pulsed<br>1 Ta=125 ° C 400 Ta=125 ° C<br>75 ° C 350 75 ° C<br>25 ° C 1 25 ° C<br>0.1 − 25 ° C 300 − 25 ° C<br>ID=1.5A<br>250<br>0.01 200<br>ID=0.8A 0.1<br>150<br>0.001 100<br>50<br>0.0001 0 0.01<br>0.0 0.5 1.0 1.5 2.0 0 1 2 3 4 5 6 7 8 9 10 0.0 0.5 1.0 1.5<br>GATE-SOURCE VOLTAGE : VGS (V) GATE-SOURCE VOLTAGE : VGS (V) SOURCE-DRAIN VOLTAGE : VSD (V)<br>Fig.4  Typical Transfer Characteristics Fig.5  Static Drain-Source Fig.6  Source Current vs.<br>                  On-State Resistance vs.               Source-Drain Voltage<br>            Gate-source Voltage<br>1000 Ta=12575 °° CC PulsedVGS=1.8V 1000 Ta=12575 °° CC PulsedVGS=2.5V 1000 Ta=125 ° C PulsedVGS=4.5V<br>25 ° C 25 ° C 75 ° C<br>− 25 ° C − 25 ° C 25 ° C<br>− 25 ° C<br>100 100<br>100<br>10 10 10<br>0.01 0.1 1 10 0.01 0.1 1 10 0.01 0.1 1 10<br>DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A)<br>Fig.7  Static Drain-Source Fig.8 Static Drain-Source Fig.9  Static Drain-Source<br>            On-State Resistance             On-State Resistance             On-State Resistance<br>             vs. Drain Current (  Ι  )                vs. Drain Current (  ΙΙ  )                vs. Drain Current (  ΙΙΙ  )<br> (V)<br>GS<br>CAPACITANCE : C (pF) SWITCHING TIME : t (ns) GATE-SOURCE VOLTAGE : V<br>) Ω<br> (m<br> (A) DS(on)  (A)S<br>D<br>DRAIN CURRENT : I<br>SOURCE CURRENT : I<br>STATIC DRAIN-SOURCE<br>ON-STATE RESISTANCE : R<br>) Ω ) Ω ) Ω<br> (m  (m  (m<br>DS (on) DS (on) DS (on)<br>STATIC DRAIN-SOURCE                         ON-STATE RESISTANCE : R STATIC DRAIN-SOURCE                         ON-STATE RESISTANCE : R STATIC DRAIN-SOURCE                         ON-STATE RESISTANCE : R<br>**----- End of picture text -----**<br>


**==> picture [35 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
� Notice<br>**----- End of picture text -----**<br>


This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. 

Rev.A 

3/3 

Appendix 

Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. 

The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). 

Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. 

It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. 

Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. 

## **ROHM** Customer Support System 

## www.rohm.com 

**THE AMERICAS** / **EUPOPE** / **ASIA** / **JAPAN** 

**Contact us** : webmaster@ rohm.co.jp 

Copyright © 2007 ROHM CO.,LTD. 

21,  Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan 

TEL : +81-75-311-2121 FAX : +81-75-315-0172 

Appendix1-Rev2.0 



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