US1JDFQ-13

|<br>NEW PRODUCT<br>:|**US1JDFQ / US1MDFQ**<br>**1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER**<br>**Product Summary **(@TA= +25°C)<br>**VRRM (V)**<br>**IO (A)**<br>**VF(MAX) (V)**<br>**IR(MAX) (µA)**<br>600,1000<br>1<br>1.7<br>5<br>**Description and Applications**<br>The US1JDFQ and US1MDFQ are rectifiers packaged in the low<br>profile D-FLAT package. Providing ultra-fast recovery time for high<br>efficiency,  this device is ideal for use in applications such as:<br><br>Reverse Protection<br><br>Switching<br><br>Blocking<br>**Features** **and Benefits**<br><br>Glass Passivated Die Construction<br><br>Ultra-Fast Recovery Time for High Efficiency<br><br>Surge Overload Rating to 30A Peak<br><br>High Current Capability<br><br>Low Profile Design, Package Height Less than 1.1mm<br><br>**Lead-Free Finish; RoHS Compliant (Notes 1 & 2)**<br><br>**Halogen and Antimony Free. “Green” Device (Note 3)**<br><br>**Qualified to AEC-Q101 Standards for High Reliability**<br><br>**PPAP Capable (Note 4)**<br>**Mechanical Data**<br><br>Case: D-FLAT<br><br>Case Material: Molded Plastic, “Green” Molding Compound. UL<br>Flammability Classification Rating 94V-0<br><br>Moisture Sensitivity: Level 1 per J-STD-020<br><br>Terminals: Finish - Matte Tin Annealed over Copper Leadframe.<br>Solderable per MIL-STD-202, Method 208<br>**Green**<br>DIODES.<br>~~@7~~|
|---|---|



- **Green US1JDFQ / US1MDFQ 1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER** 

- **Product Summary** (@TA = +25°C) **Features and Benefits VRRM (V) IO (A) VF(MAX) (V) IR(MAX) (µA)**  Glass Passivated Die Construction 600, 1000 1 1.7 5  Ultra-Fast Recovery Time for High Efficiency  Surge Overload Rating to 30A Peak  High Current Capability  Low Profile Design, Package Height Less than 1.1mm  **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)**  **Halogen and Antimony Free. “Green” Device (Note 3)**  **Qualified to AEC-Q101 Standards for High Reliability**  **PPAP Capable (Note 4)** 

- **Description and Applications Mechanical Data** The US1JDFQ and US1MDFQ are rectifiers packaged in the low  Case: D-FLAT 

- profile D-FLAT package. Providing ultra-fast recovery time for high  Case Material: Molded Plastic, “Green” Molding Compound. UL 

- efficiency,  this device is ideal for use in applications such as:  Reverse Protection Flammability Classification Rating 94V-0  Switching  Moisture Sensitivity: Level 1 per J-STD-020  Blocking  Terminals: Finish - Matte Tin Annealed over Copper Leadframe. DIODES. ~~@ 7~~ Solderable per MIL-STD-202, Method 208 

- Polarity: Cathode Band  Weight: 0.035 grams (Approximate) 

D-FLAT 

Top View 

## **Ordering Information** (Note 5) 

|**Ordering Informationg Information Information** (Note 5)|**Ordering Informationg Information Information** (Note 5)|**Ordering Informationg Information Information** (Note 5)|**Ordering Informationg Information Information** (Note 5)|
|---|---|---|---|
|||||
|**Part Number**|**Qualification**|**Case**|**Packaging**|
|US1JDFQ-13|Automotive|D-FLAT|10,000/Tape &Reel|
|US1MDFQ-13|Automotive|D-FLAT|10,000/Tape &Reel|



- Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html. 

   5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

U1J or U1M = Product Type Marking Code = Manufacturers’ Code Marking YWW = Date Code Marking Y = Last Digit of Year (ex: 6 for 2016) WW = Week Code (01 to 53) AB = Foundry and Assembly Code 

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US1JDFQ / US1MDFQ Document number: DS38447  Rev. 2 - 2 

May 2016 © Diodes Incorporated 

**US1JDFQ / US1MDFQ** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. 

|Single phase, half wave, 60Hz, resistive or inductive load.<br>For capacitive load,or capacitive load,r capacitive load,capacitive load,itive load,tive load,ive load,e load,load,oad, deraterateate currentrrententntt by 20%.20%.0%..|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**US1JDFQ**|**US1MDFQ**|**Unit**|
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|600|1000|V|
|RMS Reverse Voltage|VR(RMS)|420|700|V|
|Average Rectified Output Current<br> @TT= +25°C|IO|1.0||A|
|Non-Repetitive Peak Forward Surge Current 8.3ms<br>SingleHalfSine-Wave Superimposed on RatedLoad|IFSM|30||A|



## **Thermal Characteristics** 

|**Thermal Characteristics**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Typical Thermal Resistance,Junction to Terminal(Note 8)|RJT|44|°C/W|
|Typical Thermal Resistance,Junction to Ambient(Note 8)|RJA|80|°C/W|
|Operatingand Storage Temperature Range|TJ,TSTG|-55 to +150|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

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**----- Start of picture text -----**<br>
Characteristic  Symbol  US1JDFQ US1MDFQ Unit<br>Minimum Reverse Breakdown Voltage (Note 6) @IR = 5μA     V(BR)R 600  1000  V<br>Maximum Forward Voltage Drop @IF = 1.0A  VF 1.7  V<br>Peak Reverse Current                                     @TA = +25°C  5.0<br>IR μA<br>at Rated DC Blocking Voltage (Note 6) @TA = +100°C  100<br>Maximum Reverse Recovery Time (Note 7) tRR 75  ns<br>Typical Total Capacitance (Note 10) CT 10  pF<br>Notes:  6. Short duration pulse test used to minimize self-heating effect.<br>7. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See Figure 7.<br>8. Device mounted on FR-4 substrate, 1" * 1", 2oz, single-sided, PC boards with 0.1" * 0.15" copper pads.<br>9. Device mounted on FR-4 substrate, 0.4" * 0.5", 2oz, single-sided, PC boards with 0.2" * 0.25" copper pads.<br>10. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.<br>1.20 10<br>TA = 150°C<br>1 TA = 125°C<br>0.80 1<br>Note 9<br>0.60 TA = 100°C<br>Note 8 TA  = 85°C<br>0.40 0 1 .<br>TA = 25°C<br>0.20<br>TA = -55°C<br>0 0 25 50 75 100 125 “ 150 0 01 . 0 5 a . 1 0 . 1 5 . 2 0 . 2 5 . 3 0 .<br>TA, AMBIENT TEMPERATURE (°C) VF, INSTANTANEOUS FORWARD VOLTAGE (V)<br>Figure 1 Forward Current Derating Figure 2 Typical Forward Characteristics<br>, INSTANTANEOUS FORWARD CURRENT (A)<br>IF<br>, DC FORWARD CURRENT (A)<br>IF<br>, DC FORWARD CURRENT (A)<br>IF(DC)<br>**----- End of picture text -----**<br>


8. Device mounted on FR-4 substrate, 1" * 1", 2oz, single-sided, PC boards with 0.1" * 0.15" copper pads. 9. Device mounted on FR-4 substrate, 0.4" * 0.5", 2oz, single-sided, PC boards with 0.2" * 0.25" copper pads. 10. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 

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US1JDFQ / US1MDFQ Document number: DS38447  Rev. 2 - 2 

May 2016 © Diodes Incorporated 

**US1JDFQ / US1MDFQ** 

**==> picture [481 x 440] intentionally omitted <==**

**----- Start of picture text -----**<br>
40 Single Half Sin e- Wave 100 —SSS]SSS=<br>10 T A = 150°C<br>nn ————<br>30<br>T A  = 125°C<br>1 TA =100°C<br>\ SSS TA = 85°C<br>Cl a<br>20<br>0 1 . TA = 25°C<br>10 |bin! === — =— — —— — ——<br>— 0 01 . TA  = -55°C<br>0 hh| CU 0 001 . ===————<br>1 10 100 20 40 60 80 100<br>NUMBER OF CYCLES AT 60Hz PERCENT OF RATED PEAK REVERSE VOLTAGE (%)<br>Figure 3 Fig. 3  Forward Surge Current Derating Curve Figure 4 Typical Reverse Characteristics<br>20 1.2<br>f=1MHz  TJ = 150°C<br>1<br>Ua<br>15<br>0.8<br>10 0.6<br>SACI =  EE<br>il 0.4 cope<br>5<br>SINT 0.2 AA<br>Note 8<br>0 TIM MriTht 0 Za<br>0 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2<br>V R, DC REVERSE VOLTAGE (V) IF(AV) AVERAGE FORWARD CURRENT (A)<br>Figure 5 Total Capacitance Figure 6 Forward Power Dissipation<br>F(AV)<br>, AVERAGE FORWARD POWER DISSIPATION (W)<br>P<br>, INSTANTANEOUS REVERSE CURRENT (µA)<br>IR<br>T<br>C , TOTAL CAPACITANCE (pF)<br>(av)<br>, Average Forward Power Dissipation (W)<br>PF<br>FSM<br>, PEAK FORWARD SURGE CURRENT (A)<br>I<br>**----- End of picture text -----**<br>


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US1JDFQ / US1MDFQ Document number: DS38447  Rev. 2 - 2 

May 2016 © Diodes Incorporated 

**US1JDFQ / US1MDFQ** fe 

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**----- Start of picture text -----**<br>
t RR<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
— Approx Generator (Note 12)<br>(Note 11)<br>, COU<br>Notes:<br>11.  Rise Time = 7.0ns max. Input Impedance = 1.0MQ, 22pF.<br>12.  Rise Time = 10ns max. Input Impedance = 50Q.<br>Figure 7  Reverse Recovery<br>**----- End of picture text -----**<br>


## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **D-FLAT** 

**==> picture [227 x 120] intentionally omitted <==**

**----- Start of picture text -----**<br>
$ $$$$ HE | L k<br>[~ E -_<br>b<br>D<br>A<br>! c<br>**----- End of picture text -----**<br>


|**D-FLAT**|**D-FLAT**|**D-FLAT**|
|---|---|---|
|**Dim**|**Min**|**Max**|
|**A**|0.90|1.10|
|**b**|1.25|1.65|
|**c**|0.10|0.40|
|**D**|2.25|2.95|
|**E**|3.95|4.60|
|**k**|2.80|-|
|**HE**|5.00|5.60|
|**L**|0.50|1.30|
|**All Dimensions in mm**|||



## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **D-FLAT** 

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**----- Start of picture text -----**<br>
X1<br>X<br>Y<br>ae G<br>C<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value**<br>**(in mm)**|
|---|---|
|**C**|4.65|
|**G**|2.80|
|**X**|1.85|
|**X1**|6.50|
|**Y**|1.70|



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US1JDFQ / US1MDFQ Document number: DS38447  Rev. 2 - 2 

May 2016 © Diodes Incorporated 

**US1JDFQ / US1MDFQ** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1.  are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2016, Diodes Incorporated 

**www.diodes.com** 

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US1JDFQ / US1MDFQ Document number: DS38447  Rev. 2 - 2 

May 2016 © Diodes Incorporated