# Bipolar Transistor Array, Dual NPN, 50 V, 150 mA, 150 mW

![Product image](https://novapart.co/image/farnell:1680411/)

**URL**: https://novapart.co/products/UMX2NTR/bipolar-transistor-array-dual-npn-50-v-150-ma-mw
**SKU**: UMX2NTR
**Manufacturer**: ROHM
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Bipolar Junction Transistor Arrays - BJT
**Price**: €0.0510
**Stock**: 10+

## Description

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Power Dissipation Pd:150mW; DC Collector Current:150mA; DC Current Gain hFE:120hFE; Transistor Case Style:SOT-363; No. of Pins

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 6Pins |
| Product Range | - |
| Qualification | - |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | Dual NPN |
| Power Dissipation Npn | 150mW |
| Power Dissipation Pnp | - |
| Transistor Case Style | SOT-363 |
| Transition Frequency Npn | 180MHz |
| Transition Frequency Pnp | - |
| Operating Temperature Max | 150°C |
| Dc Current Gain Hfe Min Npn | 120hFE |
| Dc Current Gain Hfe Min Pnp | - |
| Continuous Collector Current Npn | 150mA |
| Continuous Collector Current Pnp | - |
| Collector Emitter Voltage Max Npn | 50V |
| Collector Emitter Voltage Max Pnp | - |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1680411/)

EMX2 / UMX2N **/** IMX2 

Transistors 

## General purpose (dual transistors) 

## **EMX2 / UMX2N / IMX2** 

## � **Features** 

- 1)  Two 2SC2412AK chips in a EMT or UMT or SMT package. 

## � **Equivalent circuits** 

**==> picture [123 x 79] intentionally omitted <==**

**----- Start of picture text -----**<br>
EMX2 / UMX2N IMX2<br>(3) (2) (1) (4) (5) (6)<br>Tr1 Tr1<br>Tr2 Tr2<br>(4) (5) (6) (3) (2) (1)<br>**----- End of picture text -----**<br>


- **Absolute maximum ratings** (Ta=25°C) 

|Parameter|Parameter|Symbol|Limits|Unit|
|---|---|---|---|---|
|Collector-base voltage<br>||VCBO<br>|60<br>|V<br>|
|Collector-emitter voltage<br>Emitter-base voltage||VCEO<br>VEBO|50<br>7|V<br>V|
|<br>Collector current|<br>|IC|150|mA|
|Collector power<br>dissipation|EMX2 / UMX2N<br>IMX2|PC|150(TOTAL)|mW<br>∗1<br>∗2|
||||300(TOTAL)||
|Junction temperature<br>Storage temperature||Tj<br>Tstg|150<br>−55to+150|°C<br>°C|



- ∗ 1 120mW per element must not be exceeded. 

- ∗ 2 200mW per element must not be exceeded. 

## � **Package, marking, and packaging specifications** 

|Type|EMX2|UMX2N|IMX2|
|---|---|---|---|
|Package|EMT6|UMT6|SMT6|
|Marking|X2|X2|X2|
|Code|T2R|TR|T108|
|Basic ordering unit (pieces)|8000|3000|3000|



## � **External dimensions** (Unit : mm) 

**==> picture [198 x 480] intentionally omitted <==**

**----- Start of picture text -----**<br>
EMX2<br>(4) (3)<br>(5) (2)<br>(6) (1)<br>1.2<br>1.6<br>ROHM  :  EMT6  Each lead has same dimensions<br>UMX2N<br>1.25<br>2.1<br>0.1Min.<br>ROHM  :  UMT6 Each lead has same dimensions<br>EIAJ  :  SC-88<br>IMX2<br>1.6<br>2.8<br>0.3Min.<br>ROHM  :  SMT6 Each lead has same dimensions<br>EIAJ  :  SC-74<br>0.5<br>0.22 0.5 1.0 1.6<br>0.13 0.5<br>(4) (3) 0.65<br>0.2 (5) (2)<br>1.3 2.0<br>(6) (1)<br>0.65<br>0.15<br>0.7 0.9<br>0~0.1<br>0.3 (6) (1) 0.95<br>1.9 2.9<br>(5) (2) 0.95<br>(4) (3)<br>0.15 0.8 1.1<br>0~0.1<br>**----- End of picture text -----**<br>


Rev.A 1/3 

## EMX2 / UMX2N **/** IMX2 

## Transistors 

## � **Electrical characteristics** (Ta=25°C) 

|�**Electrical characteristics**(Ta=25°|C)||||||
|---|---|---|---|---|---|---|
|Parameter|Symbol|Min.|Typ.<br>|Max.|Unit|Conditions|
|Collector-base breakdown voltage|BVCBO|60|−|−|V|IC=50µA|
|Collector-emitter breakdown voltage|BVCEO|50|−|−|V|IC=1mA|
|Emitter-base breakdown voltage|BVEBO|7|−|−|V|IE=50µA|
|Collector cutoff current|ICBO|−|−|0.1|µA|VCB=60V|
|Emitter cutoff current|IEBO|−|−|0.1|µA|VEB=7V|
|Collector-emitter saturation voltage|VCE(sat)|−|−|0.4|V|IC/IB=50mA/5mA|
|DC current transfer ratio|hFE|120|−|560|−|VCE=6V, IC=1mA|
|Transition frequency|fT|−|180|−|MHz|∗<br>VCE=12V, IE= −2mA, f=100MHz|
|Output capacitance|Cob|−|2|3.5|pF|VCB=12V, IE=0mA, f=1MHz|



∗ Transition frequency of the device. 

## � **Electrical characteristics curves** 

**==> picture [436 x 350] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.50mA<br>50 VCE=6V 100 Ta=25 ° C 10 Ta=25 ° C 30 µ A<br>20 27 µ A<br>10 80 0.30mA 8 24 µ A<br>21 µ A<br>5 60 0.25mA 6 18 µ A<br>0.20mA<br>2 15 µ A<br>1 40 0.15mA 4 12 µ A<br>0.10mA 9 µ A<br>0.5 20 0.05mA 2 6 µ A<br>0.2 3 µ A<br>0.10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 0 0.4 0.8 1.2 1.6 IB=0A2.0 00 4 8 IB=0A12 16 20<br>BASE  TO  EMITTER  VOLTAGE : VBE (V) COLLECTOR  TO  EMITTER  VOLTAGE  : VCE (V) COLLECTOR  TO  EMITTER  VOLTAGE : VCE (V)<br>Fig.1    Grounded emitter propagation  Fig.2    Grounded emitter output Fig.3    Grounded emitter output<br>characteristics characteristics (  Ι  ) characteristics (  ΙΙ  )<br>500 Ta=25 ° C 500 Ta=100 ° C VCE=5V 0.5 Ta=25 ° C<br>200 VCE=5V 200 25 ° C 0.2<br>3V − 55 ° C<br>1V IC/IB=50<br>100 100 0.1 1020<br>0.05<br>50 50<br>0.02<br>20 20<br>10 10 0.01<br>0.2 0.5 1 2 5 10 20 50 100 200 0.2 0.5 1 2 5 10 20 50 100 200 0.2 0.5 1 2 5 10 20 50 100 200<br>COLLECTOR  CURRENT : IC (mA) COLLECTOR  CURRENT : IC (mA) COLLECTOR  CURRENT : IC (mA)<br>Fig.4   DC current gain vs. Fig.5   DC current gain vs.  Fig. 6   Collector-emitter saturation<br>collector current (  Ι  ) collector current (  ΙΙ  ) voltage vs. collector current<br>0.35mA<br>0.40mA<br>0.45mA<br>25C ° 55C °−<br>100C °<br>=<br>Ta<br>(mA)COLLECTOR  CURRENT : IC  (mA)COLLECTOR  CURRENT : IC   (mA)COLLECTOR  CURRENT : IC<br>(V)<br>CE(sat)<br>FE FE<br>DC  CURRENT  GAIN : h DC  CURRENT  GAIN : h<br>COLLECTOR  SATURATION  VOLTAGE : V<br>**----- End of picture text -----**<br>


Rev.A 

2/3 

## EMX2 / UMX2N **/** IMX2 

## Transistors 

**==> picture [435 x 363] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.5 IC/IB=10 0.5 IC/IB=50 Ta=25 ° C<br>VCE=6V<br>500<br>0.2 Ta=100 ° C<br>0.2 25 ° C<br>Ta=100 ° C − 55 ° C<br>0.1 25 ° C 0.1<br>− 55 ° C 200<br>0.05 0.05<br>0.02 100<br>0.02<br>0.01 0.01<br>50<br>0.2 0.5 1 2 5 10 20 50 100 200 0.2 0.5 1 2 5 10 20 50 100 − 0.5 − 1 − 2 − 5 − 10 − 20 − 50 − 100<br>COLLECTOR  CURRENT : IC (mA) COLLECTOR  CURRENT : IC (mA) EMITTER  CURRENT : IE (mA)<br>Fig.7   Collector-emitter saturation Fig.8  Collector-emitter saturation  Fig.9  Gain bandwidth product vs.<br>voltage vs. collector current (  Ι  ) voltage vs. collector current ( ΙΙ ) emitter current<br>20 Ta=25f=1MHz ° C 200 Ta=25f=32MHVCB=6V ° CZ<br>IE=0A<br>10 IC=0A<br>100<br>5<br>50<br>2 20<br>1 10<br>0.2 0.5 1 2 5 10 20 50 − 0.2 − 0.5 − 1 − 2 − 5 − 10<br>COLLECTOR  TO  BASE  VOLTAGE : VCB (V) EMITTER  CURRENT : IE (mA)<br>EMITTER  TO  BASE  VOLTAGE       : VEB (V)<br>Fig.10    Collector output capacitance vs.  Fig.11  Base-collector time constant<br>collector-base voltage vs. emitter current<br>Emitter input capacitance vs.<br>emitter-base voltage<br>Cib<br>Cob<br>(V) (V)<br>CE(sat)  CE(sat)  (MHz)<br>T<br>TRANSITION  FREQUENCY : f<br>COLLECTOR  SATURATION  VOLTAGE : V COLLECTOR  SATURATION  VOLTAGE : V<br>(ps)<br>pF)pF) bb'<br>EMITTER  INPUT  CAPACITANCE   : Cib (<br>COLLECTOR  OUTPUT  CAPACITANCE : Cob (  BASE  COLLECTOR  TIME  CONSTANT : Cc·r<br>**----- End of picture text -----**<br>


Rev.A 

3/3 

Appendix 

## Notes 

No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. 

The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. 

## About Export Control Order in Japan 

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. 

In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. 

Appendix1-Rev1.1 



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