# Bipolar (BJT) Single Transistor, NPN, 40 V, 600 mA, 200 mW, SOT-323, Surface Mount

![Product image](https://novapart.co/image/farnell:1834026/)

**URL**: https://novapart.co/products/UMT2222AT106/bipolar-bjt-single-transistor-npn-40-v-600-ma-200
**SKU**: UMT2222AT106
**Manufacturer**: ROHM
**Price**: €0.0270
**Stock**: 10+

## Description

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation Pd:200mW; DC Collector Current:600mA; DC Current Gain hFE:100hFE; Transi

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (23-Jan-2024) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 200mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | 300MHz |
| Transistor Case Style | SOT-323 |
| Dc Current Gain Hfe Min | 100hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 600mA |
| Collector Emitter Voltage Max | 40V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1834026/)

UMT2222A / SST2222A / MMST2222A 

Transistors 

## NPN Medium Power Transistor (Switching) 

## **UMT2222A / SST2222A / MMST2222A** 

- **Features** 

- 1)  BVCEO > 40V (IC=10mA) 

- 2)  Complements the UMT2907A / SST2907A / MMST2907A. 

## � **Package, marking, and packaging specifications** 

|Part No.|UMT2222A|SST2222A|MMST2222A|
|---|---|---|---|
|Packaging type<br>Marking|UMT3<br>R1P|SST3<br>R1P|SMT3<br>R1P|
|Code|T106|T116|T146|
|Basic ordering unit<br>(pieces)|3000|3000|3000|



## � **Absolute maximum ratings** (Ta = 25°C) 

**==> picture [201 x 82] intentionally omitted <==**

**----- Start of picture text -----**<br>
Parameter Symbol Limits Unit<br>Collector-base voltage VCBO 75 V<br>Collector-emitter voltage VCEO 40 V<br>Emitter-base voltage VEBO 6 V<br>Collector current IC 0.6 A<br>UMT2222A,SST2222A,<br>MMST2222A 0.2 W<br>Collector power dissipation SST2222A PC 0.35 W ∗<br>Junction temperature Tj 150 ° C<br>Storage temperature Tstg − 55 to  + 150 ° C<br>∗  When mounted on a 7 x 5 x 0.6 mm ceramic board<br>**----- End of picture text -----**<br>


## � **Dimensions** (Unit : mm) 

**==> picture [206 x 206] intentionally omitted <==**

**----- Start of picture text -----**<br>
UMT2222A<br>(1)  Emitter<br>ROHM  :  UMT3 (2)  Base<br>EIAJ  :  SC-70 (3)  Collector<br>SOT-323<br>SST2222A<br>(1)  Emitter<br>(2)  Base<br>ROHM  :  SST3 (3)  Collector<br>MMST2222A<br>(1)  Emitter<br>ROHM  :  SMT3 (2)  Base<br>EIAJ  :  SC-59 (3)  Collector<br>**----- End of picture text -----**<br>


## � **Electrical characteristics** (Ta = 25°C) 

|Parameter<br>Collector-base breakdown voltage<br>Collector-emitter breakdown voltage<br>Emitter-base breakdown voltage<br>Collector cutoff current<br>Emitter cutoff current<br>Base-emitter saturation voltage<br>Collector-emitter saturation voltage<br>DC current transfer ratio<br>Transition frequency<br>Output capacitance<br>Emitter input capacitance<br>Delay time<br>Rise time<br>Storage time<br>Fall time|Symbol|Min.|Typ.|Max.|Unit|Conditions|
|---|---|---|---|---|---|---|
||BVCBO|75|−|−|V|IC=10µA|
||BVCEO|40|−|−|V|IC=10mA|
||BVEBO|6|−|−|V|IE=10µA|
||ICBO|−|−|100|nA|VCB=60V|
||IEBO|−|−|100|nA|VEB=3V|
||VCE(sat)|−|−|0.3|V|IC/IB=150mA/15mA|
|||−|−|1||IC/IB=500mA/50mA|
||VBE(sat)|0.6|−|1.2|V|IC/IB=150mA/15mA|
|||−|−|2||IC/IB=500mA/50mA|
||hFE|35|−|−|−|VCE=10V , IC=0.1mA|
|||50|−|−||VCE=10V , IC=1mA|
|||75|−|−||VCE=10V , IC=10mA|
|||50|−|−||VCE=1V , IC=150mA|
|||100|−|300||VCE=10V , IC=150mA|
|||40|−|−||VCE=10V , IC=500mA|
||fT|300|−|−|MHz|VCE=20V , IC=−20mA, f=100MHz|
||Cob|−|−|8|pF|VCB=10V , f=100kHz|
||Cib|−|−|25|pF|VEB=0.5V , f=100kHz|
||td|−|−|10|ns|VCC=30V , VBE(OFF)=0.5V , IC=150mA , IB1=15mA|
||tr|−|−|25|ns|VCC=30V , VBE(OFF)=0.5V , IC=150mA , IB1=15mA|
||tstg|−|−|225|ns|VCC=30V , IC=150mA , IB1=−IB2=15mA|
||tf|−|−|60|ns|VCC=30V , IC=150mA , IB1=−IB2=15mA|



Rev.A 1/3 

UMT2222A / SST2222A / MMST2222A 

Transistors 

## � **Electrical characteristic curves** 

**==> picture [136 x 315] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>Ta=25 ° C 600<br>500<br>400<br>50 300<br>200<br>100<br>IB=0 µ A<br>0<br>0 5 10<br>COLLECTOR-EMITTER  VOLTAGE : VCE(V)<br>Fig.1  Grounded emitter output<br>            characteristics<br>Ta = 25 ° C<br>IC / IB = 10<br>0.3<br>0.2<br>0.1<br>0<br>1.0 10 100 1000<br>COLLECTOR  CURRENT : Ic(mA)<br>(mA)<br>COLLECTOR  CURRENT : Ic<br>(V)<br>CE(sat)<br>COLLECTOR  EMITTER  SATURATION  VOLTAGE : V<br>**----- End of picture text -----**<br>


Fig.2  Collector-emitter saturation voltage vs. collector current 

**==> picture [247 x 127] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000 Ta = 25 ° C<br>VCE = 10V<br>100<br>1V<br>10<br>0.1 1.0 10 100 1000<br>COLLECTOR  CURRENT : Ic(mA)<br>FE<br>DC  CURRENT  GAIN : h<br>**----- End of picture text -----**<br>


Fig.3  DC current gain vs. collector current( Ι ) 

**==> picture [243 x 128] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000 VCE = 10V<br>Ta = 125 ° C<br>25 ° C<br>100 − 55 ° C<br>10<br>0.1 1.0 10 100 1000<br>COLLECTOR  CURRENT : Ic(mA)<br>FE<br>DC  CURRENT  GAIN : h<br>**----- End of picture text -----**<br>


Fig.4  DC current gain vs. collector current( ΙΙ ) 

**==> picture [433 x 153] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.8 Ta = 25 ° C<br>1000 Ta = 25 ° C IC / IB = 10<br>VCE = 10V 1.6<br>f = 1kHz<br>1.2<br>100 0.8<br>0.4<br>0<br>1.0 10 100 1000<br>100.1 1.0 10 100 1000 COLLECTOR  CURRENT : Ic(mA)<br>COLLECTOR  CURRENT : Ic(mA)<br>Fig.6  Base-emitter saturation<br>Fig.5  AC current gain vs. collector current             voltage vs. collector current<br>(V)<br>BE(sat)<br>FE<br>AC  CURRENT  GAIN : h<br>BASE  EMITTER  SATURATION  VOLTAGE : V<br>**----- End of picture text -----**<br>


Rev.A 2/3 

UMT2222A / SST2222A / MMST2222A 

## Transistors 

**==> picture [136 x 127] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.8 Ta = 25 ° C<br>VCE = 10V<br>1.6<br>1.2<br>0.8<br>0.4<br>0<br>1 10 100 1000<br>COLLECTOR  CURRENT : Ic(mA)<br>(V)<br>BE(ON)<br>BASE  EMITTER  VOLTAGE : V<br>**----- End of picture text -----**<br>


Fig.7  Grounded emitter propagation characteristics 

**==> picture [136 x 332] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000 Ta = 25 ° C<br>VCC = 30V<br>IC = 10IB1 = 10IB2<br>100<br>10<br>1.0 10 100 1000<br>COLLECTOR  CURRENT : Ic(mA)<br>Fig.10  Storage time vs. collector<br>              current<br>100 Ta = 25 ° C<br>100MHz 250MHz 300MHz<br>200MHz<br>10<br>1<br>250MHz<br>0.1<br>1 10 100 1000<br>COLLECTOR  CURRENT : Ic(mA)<br>Fig.13  Gain bandwidth product<br>(ns)<br>STORAGE  TIME : Ts<br>(V)<br>CE<br>COLLECTOR-EMITTER  VOLTAGE : V<br>**----- End of picture text -----**<br>


**==> picture [283 x 349] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000 Ta = 25 ° C 500 Ta = 25 ° C<br>IC / IB = 10 VCC = 30V<br>IC / IB = 10<br>100<br>100<br>VCC = 30V<br>10V<br>10<br>10 5<br>1.0 10 100 1000 1.0 10 100 1000<br>COLLECTOR  CURRENT : Ic(mA) COLLECTOR  CURRENT : Ic(mA)<br>Fig.8  Turn-on time vs. collector Fig.9  Rise time vs. collector<br>            current             current<br>1000 Ta = 25 ° C 100 Ta = 25 ° C<br>VCC = 30V f = 1MHz<br>IC = 10IB1 = 10IB2<br>Cib<br>100 10 Cob<br>10 1<br>1.0 10 100 1000 0.1 1.0 10 100<br>COLLECTOR  CURRENT : Ic(mA) REVERSE  BIAS  VOLTAGE(V)<br>Fig.11  Fall time vs. collector  Fig.12  Input / output capacitance<br>              current               vs. voltage<br>(ns)<br>(ns)<br>RISE  TIME : tr<br>TURN  ON  TIME : ton<br>FALL  TIME : tf(ns) CAPACITANCE(pF)<br>**----- End of picture text -----**<br>


**==> picture [115 x 18] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig.12  Input / output capacitance<br>              vs. voltage<br>**----- End of picture text -----**<br>


**==> picture [135 x 129] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000 Ta = 25 ° C<br>VCE = 10V<br>100<br>10<br>1.0 10 100 1000<br>COLLECTOR  CURRENT : Ic(mA)<br>(MHz)<br>CURRENT  GAIN-BANDWIDTH  PRODUCT<br>**----- End of picture text -----**<br>


Fig.14  Gain bandwidth product vs. collector current 

3/3 

Rev.A 

Appendix 

Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. 

The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). 

Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. 

It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. 

Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. 

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Copyright © 2007 ROHM CO.,LTD. 

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Appendix1-Rev2.0 



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