UMH8NTR

Datasheet 

**NPN  100mA  50V  Complex Digital Transistors (Bias Resistor Built-in Transistors)** 

## UMH8N / IMH8A 

|Parameter<br>~~S=—~~|Tr1 and Tr2<br>~~S=—~~|
|---|---|
|VCEO<br>~~S=—~~|50V<br>~~S=—~~|
|IC<br>~~S=—~~|100mA<br>~~S=—~~|
|R1<br>~~S=—~~|10k<br>~~S=—~~|



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 Outline<br>UMT6 (6) SMT6 (4)<br>(5) (5)<br>(4) (6)<br>(1) (3)<br>(2) (2)<br>(3) (1)<br>UMH8N IMH8A<br>SOT-363 (SC-88) SOT-457 (SC-74)<br>|*|*<br>**----- End of picture text -----**<br>


##  **Features** 

- 1) Built-In Biasing Resistors. 

- 2) Two DTC114T chips in one package. 

- 3) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit). 

- 4) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of completely eliminating parasitic effects. 

- 5) Only the on/off conditions need to be set for operation, making the circuit design easy. 

- 6) Lead Free/RoHS Compliant. 

##  **Application** 

Inverter circuit, Interface circuit, Driver circuit 

##  **Inner circuit** 

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Collector Base Collector<br>(6) (5) (4)<br>R1 DTr2<br>DTr1<br>R1<br>(1) (2) (3)<br>Emitter Emitter Base<br>UMH8N<br>**----- End of picture text -----**<br>


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Base Emitter Emitter<br>(4) (5) (6)<br>R1<br>DTr1<br>DTr2<br>R1<br>a.<br>(3) (2) (1)<br>Collector Base Collector<br>IMH8A<br>**----- End of picture text -----**<br>


 **Packaging specifications** Package Basic Taping Reel size Tape width Part No. Package size ordering Marking code (mm) (mm) (mm) unit (pcs) UMH8N UMT6 2021 TN 180 8 3,000 H8 IMH8A SMT6 2928 T110 180 8 3,000 H8 ~~=~~ 

www.rohm.com 

**2014.10 -  Rev.C** 

© 2014  ROHM Co., Ltd. All rights reserved. 

1/5 

Data Sheet 

**UMH8N / IMH8A** 

##  **Absolute maximum ratings** (Ta = 25°C) 

<For  DTr1 and DTr2 in common> 

|Parameter||Symbol|Values|Unit|
|---|---|---|---|---|
|Collector-base voltage||VCBO|50|V|
|Collector-emitter voltage||VCEO|50|V|
|Emitter-base voltage||VEBO|5|V|
|Collector current||IC<br>*1|100|mA|
|Collector Power dissipation|UMH8N|PD<br>*2|150 (Total)*3|mW|
||IMH8A||300 (Total)*4|mW|
|Junction temperature||Tj|150|°C|
|Range of storage temperature||Tstg|55 to150|°C|



##  **Electrical characteristics** (Ta = 25°C) 

<For DTr1 and DTr2 in common> 

|Parameter|Symbol|Conditions|Min.|Typ.|Max.|Unit|
|---|---|---|---|---|---|---|
|Collector-base breakdown voltage|BVCBO|IC= 50A|50|-|-|V|
|Collector-emitter breakdown voltage|BVCEO|IC= 1mA|50|-|-|V|
|Emitter-base breakdown voltage|BVEBO|IE= 50A|5|-|-|V|
|Collector cut-off current|ICBO|VCB= 50V|-|-|0.5|A|
|Emitter cut-off current|IEBO|VEB= 4V|-|-|0.5|A|
|Collector-emitter saturation voltage|VCE(sat)|IC/ IB= 10mA / 1mA|-|-|0.3|V|
|DC current gain|hFE|VCE= 5V , IC= 1mA|100|250|600|-|
|Input resistance|R1|-|7|10|13|k|
|Transition frequency|fT *1|VCE= 10V, IE=5mA<br>f = 100MHz|-|250|-|MHz|



- *1 Characteristics of built-in transistor 

- *2 Each terminal mounted on a reference footprint 

- *3 120mW per element must not be exceeded. 

- *4 200mW per element must not be exceeded. 

www.rohm.com © 2014  ROHM Co., Ltd. All rights reserved. 

**2014.10 -  Rev.C** 

2/5 

Data Sheet 

**UMH8N / IMH8A** 

##  **Electrical characteristic curves** (Ta = 25°C) <For DTr1 and DTr2 in common> 

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Fig.1 Grounded emitter propagation<br>characteristics<br>10<br>(munE=SLF VCE=5V 25 2a>=eaaaaae<br>1 CCEA CEP<br>pp pes<br>NY<br>0.1<br>COCR TEC<br>Ta=100ºC<br>25ºC<br>40ºC<br>liga aut<br>0.01 =5=!/5 =: =============<br>BERRA EH Ree ER EE rES<br>Oe 2 oe<br>0.001 COPE CT<br>0 0.5 1 1.5 2<br> [mA]<br>C<br>COLLECTOR CURRENT : I<br>**----- End of picture text -----**<br>


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Fig.2 Grounded emitter output<br>characteristics IB= 500A<br>100<br>Ta=25ºC 450A<br>ne apoeee 400A<br>80 350A<br>( =<br>wf ae 300A<br>60 ff 250A<br>Wo 200A<br>Yeo<br>40 150A<br>Yo 100A<br>20 (2<br>po 50A<br>a a a a<br>0 Pi tit tT tty 0A<br>0 5 10<br> [mA]<br>C<br>COLLECTOR CURRENT : I<br>**----- End of picture text -----**<br>


BASE TO EMITTER VOLTAGE : VBE [V] 

COLLECTOR TO EMITTER VOLTAGE : VCE [V] 

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Fig.3 DC Current gain  Fig.4 Collector-emitter saturation voltage<br>vs. Collector Current vs. Collector Current<br>SE Sati]a SSSSS oo<br>500 |Vcessv i 500m reoP|loft F<br>0Oe<br>400 RH |_| Ta=100°C: AZT 100m fp Ta 100°C.<br>Pp peo tt po BC<br>Poti nl eeeare<br>s =eeeee sm ahFH<br>a Po<br>> LIC om | LUTTE<br>+ L_LLIIME LTT im CULM LIE |<br>100p 200n 500n1m 2m 5m 10m 20m 50m100m 100p 2001 500n1m 2m 5m 10m 20m 50m100m<br>COLLECTOR CURRENT : IC [mA] COLLECTOR CURRENT : IC [mA]<br>FE<br> [V]<br>CE(sat)<br>VOLTAGE : V<br>DC CURRENT GAIN : h<br>COLLECTOR SATURATION<br>**----- End of picture text -----**<br>


www.rohm.com © 2014  ROHM Co., Ltd. All rights reserved. 

**2014.10 -  Rev.C** 

3/5 

Data Sheet 

**UMH8N / IMH8A** 

##  **Dimensions** (Unit : mm) 

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D<br>A<br>UMT6 e<br>b<br>x S A<br>y S<br>S<br>E<br>E H<br>A<br>A1<br>**----- End of picture text -----**<br>


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c<br>Q<br>A3<br>e<br>b2<br>Pattern of terminal position areas<br>[Not a recommended pattern of soldering pads]<br>Lp<br>L1<br>e1<br>l1<br>**----- End of picture text -----**<br>


|DIM|MILIMETERS|MILIMETERS|INCHES|INCHES|
|---|---|---|---|---|
||MIN|MAX|MIN|MAX|
|A|0.80|1.00|0.031|0.039|
|A1|0.00|0.10|0.000|0.004|
|A3|0.25||0.010||
|b|0.15|0.30|0.006|0.012|
|c|0.10|0.20|0.004|0.008|
|D|1.90|2.10|0.075|0.083|
|E|1.15|1.35|0.045|0.053|
|e|0.65||0.026||
|HE|2.00|2.20|0.079|0.087|
|L1|0.20|0.50|0.008|0.020|
|Lp|0.25|0.55|0.010|0.022|
|Q|0.10|0.30|0.004|0.012|
|x|-|0.10|-|0.004|
|y|-|0.10|-|0.004|
||||||
|DIM|MILIMETERS||INCHES||
||MIN|MAX|MIN|MAX|
|b2|-|0.40|-|0.016|
|e1|1.55||0.061||
|l1|-|0.65|-|0.026|



Dimension in mm / inches 

www.rohm.com © 2014  ROHM Co., Ltd. All rights reserved. 

**2014.10 -  Rev.C** 

4/5 

Data Sheet 

**UMH8N / IMH8A** 

##  **Dimensions** (Unit : mm) 

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D<br>A<br>e<br>SMT6 c<br>Q<br>A3<br>b<br>x S A<br>e<br>y S<br>S<br>b2<br>Pattern of terminal position areas<br>[Not a recommended pattern of soldering pads]<br>E<br>E H<br>L1 Lp<br>e1<br>A<br>l1<br>A1<br>**----- End of picture text -----**<br>


|DIM|MIN<br>MAX<br>MILIMETERS|MIN<br>MAX<br>MILIMETERS|INCHES|INCHES|
|---|---|---|---|---|
|||MAX|MIN|MAX|
|A|1.00|1.30|0.039|0.051|
|A1|0.00|0.10|0.000|0.004|
|A3|0.25||0.010||
|b|0.25|0.40|0.010|0.016|
|c|0.09|0.25|0.004|0.010|
|D|2.80|3.00|0.110|0.118|
|E|1.50|1.80|0.059|0.071|
|e|0.95||0.037||
|HE|2.60|3.00|0.102|0.118|
|L1|0.30|0.60|0.012|0.024|
|Lp|0.40|0.70|0.016|0.028|
|Q|0.20|0.30|0.008|0.012|
|x|-|0.20|-|0.008|
|y|-|0.10|-|0.004|
||||||
|DIM|MIN<br>MAX<br>MILIMETERS||INCHES||
|||MAX|MIN|MAX|
|b2||0.60|-|0.024|
|e1|2.10||0.083||
|l1|-|0.90|-|0.035|



Dimension in mm / inches 

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**2014.10 -  Rev.C** 

5/5 

Notice 

- **N o t e s** 

- 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications : 

- 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 

- 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 

- 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 

- 6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. 

- 7) The Products specified in this document are not designed to be radiation tolerant. 8) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. 

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- 12) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have  no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 

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