# Dual MOSFET, N Channel, 50 V, 50 V, 200 mA, 200 mA, 1.6 ohm

![Product image](https://novapart.co/image/farnell:4319919/)

**URL**: https://novapart.co/products/UM6K34NTCN/dual-mosfet-n-channel-50-v-200-ma-16-ohm
**SKU**: UM6K34NTCN
**Manufacturer**: ROHM
**Category**: Semiconductors - Discretes || FETs || Dual MOSFETs
**Price**: €0.0540
**Stock**: 10+
**Lead Time**: 134 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 6Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Transistor Case Style | SOT-363 |
| Operating Temperature Max | 150°C |
| Power Dissipation N Channel | 150mW |
| Power Dissipation P Channel | 150mW |
| Drain Source Voltage Vds N Channel | 50V |
| Drain Source Voltage Vds P Channel | 50V |
| Continuous Drain Current Id N Channel | 200mA |
| Continuous Drain Current Id P Channel | 200mA |
| Drain Source On State Resistance N Channel | 1.6ohm |
| Drain Source On State Resistance P Channel | 1.6ohm |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4319919/)

## 0.9V Drive Nch + Nch MOSFET 

## **UM6K34N** 

##  **Structure** 

Silicon N-channel MOSFET 

##  **Features** 

1) Mounting cost and area can be cut in half. 

2) Low On-resistance. 

3) Low voltage drive(0.9Vdrive)makes this device ideal for portable equipment. 

##  **Dimensions** (Unit : mm) 

**==> picture [112 x 107] intentionally omitted <==**

**----- Start of picture text -----**<br>
UMT6<br>(SC-88)<br><SOT-363><br>(6) (5) (4)<br>(1) (2) (3)<br>Abbreviated symbol : K34<br>**----- End of picture text -----**<br>


##  **Application** 

Interfacing, Switching 

##  **Inner circuit** 

##  **Packaging specifications** 

|Type|Package|Taping|
|---|---|---|
||g<br>Code|pg<br>TCN|
||Basic orderingunit(pieces)|3000|
|UM6K34N||○|



(6) (5) (4) ∗ 1 ∗ 2 ∗ 2 (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Drain ∗ 1 (4) Tr2 Source (5) Tr2 Gate (1) (2) (3) (6) Tr1 Drain ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE 

 **Absolute maximum ratings** (Ta = 25C) 

|**Absolute maximum ratingsgss **(Ta = 25C)Ta = 25C)C)|**Absolute maximum ratingsgss **(Ta = 25C)Ta = 25C)C)|(Ta = 25C)Ta = 25C)C)C))|||
|---|---|---|---|---|
|Parameter||Symbol<br>~~a~~|Limits<br>~~a~~|Unit|
|Drain-source voltage||VDSS<br>~~a~~|50<br>~~a~~|V|
|Gate-source voltage||VGSS<br>~~a~~<br>~~ee~~|8<br>~~a~~<br>~~ee~~|V|
|Drain current|Continuous<br>~~ee~~|ID<br>~~ee~~<br>~~ee~~<br>~~ee~~|200<br>~~ee~~<br>~~ee~~|mA|
||Pulsed<br>~~ee~~|IDP<br>*1<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~es~~|800<br>~~ee~~<br>~~ee~~|mA|
|Source current<br>(Body Diode)|Continuous<br>~~ee~~|Is<br>~~ee~~<br>~~ee~~<br>~~es~~<br>~~ee~~|125<br>~~ee~~|mA|
||Pulsed<br>~~ee~~|Isp<br>*1<br>~~es~~<br>~~ee~~<br>~~ee~~|800<br>~~ee~~|mA|
|Power dissipation||PD<br>*2<br>~~ee~~<br>~~pL~~<br>~~ee~~|150<br>~~pL~~|mW / TOTAL|
||||120<br>~~pL~~<br>~~|~~<br>~~ee~~|mW / ELEMENT|
|Channel temperature||Tch<br>~~ee~~|150<br>~~|~~<br>~~ee~~|C|
|Range of storage temperature||Tstg<br>~~ee~~<br>~~ee~~|55 to150<br>~~|~~<br>~~ee~~<br>~~ee~~|C|



*1 Pw10s, Duty cycle1% 

- *2 Each terminal mounted on a recommended land. 

##  **Thermal resistance** 

|**Thermal resistance**||||
|---|---|---|---|
|Parameter|Symbol|Limits|Unit|
|Channel to Ambient|Rth (ch-a)<br>*|833|˚C / W /TOTAL|
|||1042|˚C / W /ELEMENT|



- Each terminal mounted on a recommended land. 

www.rohm.com © 2011  ROHM Co., Ltd. All rights reserved. 

**2011.04 -  Rev.A** 

1/6 

Data Sheet 

**UM6K34N** 

##  **Electrical characteristics** (Ta = 25C) 

<It is the same ratings for Tr1 and Tr2.> 

|Parameter|Symbol|Min.|Typ.|Max.|Unit|Conditions|
|---|---|---|---|---|---|---|
|Gate-source leakage|IGSS|-|-|10|A|VGS=8V, VDS=0V|
|Drain-source breakdown voltage|V(BR)DSS|50|-|-|V|ID=1mA, VGS=0V|
|Zerogate voltage drain current|IDSS|-|-|1|A|VDS=50V, VGS=0V|
|Gate threshold voltage|VGS(th)|0.3|-|0.8|V|VDS=10V, ID=1mA|
|Static drain-source on-state<br>resistance|RDS (on)<br>*|-|1.6|2.2||ID=200mA, VGS=4.5V|
|||-|1.7|2.4||ID=200mA, VGS=2.5V|
|||-|2.0|2.8||ID=200mA, VGS=1.5V|
|||-|2.2|3.3||ID=100mA, VGS=1.2V|
|||-|3.0|9.0||ID=10mA, VGS=0.9V|
|Forward transfer admittance|l Yfsl<br>*|0.2|-|-|S|ID=200mA, VDS=10V|
|Input capacitance|Ciss|-|26|-|pF|VDS=10V<br>VGS=0V<br>f=1MHz|
|Output capacitance|Coss|-|6|-|pF||
|Reverse transfer capacitance|Crss|-|3|-|pF||
|Turn-on delaytime|td(on)<br>*|-|5|-|ns|ID=100mA, VDD 25V<br>VGS=4.5V<br>RL=250<br>RG=10|
|Rise time|tr<br>*|-|8|-|ns||
|Turn-off delaytime|td(off)<br>*|-|17|-|ns||
|Fall time|tf<br>*|-|43|-|ns||



*Pulsed 

##  **Body diode characteristics** (Source-Drain) (Ta = 25C) 

<It is the same ratings for Tr1 and Tr2.> 

|Parameter|Symbol|Min.|Typ.|Max.|Unit|Conditions|
|---|---|---|---|---|---|---|
|Forward Voltage|VSD<br>*|-|-|1.2|V|Is=200mA, VGS=0V|



*Pulsed 

www.rohm.com © 2011  ROHM Co., Ltd. All rights reserved. 

**2011.04 -  Rev.A** 

2/6 

Data Sheet 

**UM6K34N** 

##  **Electrical characteristic curves** (Ta=25C) 

**==> picture [419 x 588] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig.1 Typical Output Characteristics(Ⅰ)  Fig.2 Typical Output Characteristics(Ⅱ)<br>0.2 0.2<br>VGS= 4.5V<br>0.15 VGS= 0.9V  0.15 VVGSGS= 2.5V = 1.5V<br>VGS= 1.2V<br>VGS= 4.5V<br>VVGSGS= 2.5V = 1.5V  VGS= 0.9V<br>0.1 VGS= 1.2V  0.1 VGS= 0.8V<br>0.05 VGS= 0.8V  Tpulsed a=25°C  0.05 Tpulsed a=25°C<br>VGS= 0.7V  VGS= 0.7V<br>0 0<br>0 0.2 0.4 0.6 0.8 1 0 2 4 6 8 10<br>DRAIN-SOURCE VOLTAGE : VDS[V]  DRAIN-SOURCE VOLTAGE : VDS[V]<br>Fig.4  Static Drain-Source On-State<br>Fig.3  Typical Transfer Characteristics             Resistance vs. Drain Current(Ⅰ)<br>1 10000<br>VPulsed DS= 10V  Tpulsed a=25°C<br>Ta=125°C<br>Ta=75°C<br>0.1 Ta=25°C<br>Ta= -25°C<br>1000<br>.  VGS= 0.9V<br>VGS= 1.2V<br>0.01 VGS= 1.5V<br>VGS= 2.5V<br>VGS= 4.5V<br>0.001 100<br>0 0.2 0.4 0.6 0.8 1 0.001 0.01 0.1 1<br>GATE-SOURCE VOLTAGE : VGS[V]  DRAIN-CURRENT : ID[A]<br>Fig.5  Static Drain-Source On-State  Fig.6  Static Drain-Source On-State<br>           Resistance vs. Drain Current(Ⅱ)             Resistance vs. Drain Current(Ⅲ)<br>10000 10000<br>VPulsed GS= 4.5V  VPulsed GS= 2.5V<br>1000 1000<br>TTTTaaaa=125=75=25= -25°°C C °°C C  TTTTaaaa=125=75=25= -25°°C C °°C C<br>100 100<br>0.001 0.01 0.1 1 0.001 0.01 0.1 1<br>DRAIN-CURRENT : ID[A]  DRAIN-CURRENT : ID[A]<br>DRAIN CURRENT : I[A] D DRAIN CURRENT : I[A] D<br>]<br>[A] D )[m(ΩDSon<br>DRAIN CURRENT : I RESISTANCE : R<br>STATIC DRAIN-SOURCE ON-STATE<br>] Ω ] Ω<br>)[m )[m<br>(DSon (DSon<br>RESISTANCE : R RESISTANCE : R<br>STATIC DRAIN-SOURCE ON-STATE   STATIC DRAIN-SOURCE ON-STATE<br>**----- End of picture text -----**<br>


www.rohm.com 

© 2011  ROHM Co., Ltd. All rights reserved. 

**2011.04 -  Rev.A** 

3/6 

Data Sheet 

**UM6K34N** 

**==> picture [509 x 678] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig.7  Static Drain-Source On-State  Fig.8  Static Drain-Source On-State<br>           Resistance vs. Drain Current(Ⅳ)             Resistance vs. Drain Current(Ⅴ)<br>10000 10000<br>VPulsed GS= 1.5V  VPulsed GS= 1.2V<br>1000 TTTTaaaa=125=75=25= -25°°C C °°C C  1000 TTTTaaaa=125=75=25= -25°°C C °°C C<br>100 100<br>0.001 0.01 0.1 1 0.001 0.01 0.1 1<br>DRAIN-CURRENT : ID[A]  DRAIN-CURRENT : ID[A]<br>Fig.9  Static Drain-Source On-State  Fig.10 Forward Transfer Admittance<br>           Resistance vs. Drain Current(Ⅵ)            vs. Drain Current<br>10000 10<br>VPulsed GS= 0.9V  VPulsed DS= 10V<br>1000 TTaa=125=75°C °C  1<br>Ta=25°C<br>Ta= -25°C<br>Ta=125°C<br>Ta=75°C<br>Ta=25°C<br>Ta= -25°C<br>100 0.1<br>0.001 0.01 0.1 1 0.01 0.1 1<br>DRAIN-CURRENT : ID[A]  DRAIN-CURRENT : ID[A]<br>Fig.12  Static Drain-Source On-State<br>Fig.11  Reverse Drain Current<br>             Resistance vs. Gate Source Voltage<br>          vs. Sourse-Drain Voltage<br>1 5000<br>VGS=0V  Ta=25°C<br>Pulsed  pulsed<br>4000<br>ID= 0.01A<br>3000<br>0.1 ID= 0.20A<br>Ta=125°C  2000<br>Ta=75°C<br>Ta=25°C<br>Ta= -25°C  1000<br>0.01 0<br>0 0.5 1 1.5 0 1 2 3 4 5 6 7 8<br>SOURCE-DRAIN VOLTAGE : VSD [V]  GATE-SOURCE VOLTAGE : VGS[V]<br>)[m(] ΩDSon )[m(] ΩDSon<br>RESISTANCE : R RESISTANCE : R<br>STATIC DRAIN-SOURCE ON-STATE   STATIC DRAIN-SOURCE ON-STATE<br>]<br>Ω<br>)[m<br>(DSon<br>RESISTANCE : R<br>STATIC DRAIN-SOURCE ON-STATE<br>FORWARD TRANSFER  ADMITTANCE : |Yfs| [S]<br>]<br>Ω<br> [A] s )[m(ONDS<br>RESISTANCE : R<br>SOURCE CURRENT : I<br>STATIC DRAIN-SOURCE ON-STATE<br>**----- End of picture text -----**<br>


www.rohm.com 

© 2011  ROHM Co., Ltd. All rights reserved. 

**2011.04 -  Rev.A** 

4/6 

Data Sheet 

**UM6K34N** 

Fig.13  Switching Characteristics 

Fig.14  Typical Capacitance vs. Drain-Source Voltage 

**==> picture [409 x 369] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>Ta=25°C<br>td(off)  VDD=25V  4<br>VGS=4.5V<br>tf  RG=10Ω<br>Pulsed<br>100 3<br>2<br>10 Ta=25°C<br>1 VDD=25V<br>ID= 0.2A<br>RG=10Ω<br>td(on)  tr  Pulsed<br>1 0<br>0.01 0.1 1 0 0.5 1 1.5<br>DRAIN-CURRENT : ID[A]  TOTAL GATE CHARGE : Qg  [nC]<br>Fig.15  Typical Capacitance<br>             vs. Drain-Source Voltage<br>1000<br>Ta=25°C<br>f=1MHz<br>VGS=0V<br>100 Ciss<br>10<br>Crss<br>Coss<br>1<br>0.01 0.1 1 10 100<br>DRAIN-SOURCE VOLTAGE : VDS[V]<br> [V]<br>GS<br>SWITCHING TIME : t [ns]  GATE-SOURCE VOLTAGE : V<br>CAPACITANCE : C [pF]<br>**----- End of picture text -----**<br>


www.rohm.com © 2011  ROHM Co., Ltd. All rights reserved. 

**2011.04 -  Rev.A** 

5/6 

Data Sheet 

**UM6K34N** 

##  **Measurement circuits** 

**==> picture [276 x 92] intentionally omitted <==**

**----- Start of picture text -----**<br>
Pulse width<br>VGS ID<br>VDS 50% 90% 50%<br>RL VGS 10%<br>VDS<br>D.U.T. 10% 10%<br>RG VDD 90% 90%<br>td(on) tr td(off) tf<br>ton toff<br>**----- End of picture text -----**<br>


Fig.1-1  Switching Time Measurement Circuit 

Fig.1-2 Switching Waveforms 

##  **Notice** 

This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. 

www.rohm.com © 2011  ROHM Co., Ltd. All rights reserved. 

**2011.04 -  Rev.A** 

6/6 

Notice 

## N o t e s 

Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. 

## ROHM  Customer Support System 

http://www.rohm.com/contact/ 

www.rohm.com © 2011  ROHM Co., Ltd. All rights reserved. 

R1120A 



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- [Supplier page](https://es.farnell.com/rohm/um6k34ntcn/mosfet-n-ch-50v-0-2a-sot-363/dp/4319919)
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