# Dual MOSFET, N Channel, 50 V, 50 V, 200 mA, 200 mA, 1.6 ohm

![Product image](https://novapart.co/image/farnell:4319918/)

**URL**: https://novapart.co/products/UM6K33NTN/dual-mosfet-n-channel-50-v-200-ma-16-ohm
**SKU**: UM6K33NTN
**Manufacturer**: ROHM
**Category**: Semiconductors - Discretes || FETs || Dual MOSFETs
**Price**: €0.0610
**Stock**: 10+
**Lead Time**: 134 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 6Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Transistor Case Style | SOT-363 |
| Operating Temperature Max | 150°C |
| Power Dissipation N Channel | 150mW |
| Power Dissipation P Channel | 150mW |
| Drain Source Voltage Vds N Channel | 50V |
| Drain Source Voltage Vds P Channel | 50V |
| Continuous Drain Current Id N Channel | 200mA |
| Continuous Drain Current Id P Channel | 200mA |
| Drain Source On State Resistance N Channel | 1.6ohm |
| Drain Source On State Resistance P Channel | 1.6ohm |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4319918/)

## 1.2V Drive Nch + Nch MOSFET 

## **UM6K33N** 

##  **Structure** 

Silicon N-channel MOSFET 

##  **Features** 

1) High speed switing. 

2) Small package(UMT6). 

3) Ultra low voltage drive(1.2V drive). 

 **Application** Switching 

##  **Dimensions** (Unit : mm) 

**==> picture [112 x 119] intentionally omitted <==**

**----- Start of picture text -----**<br>
UMT6<br>(SC-88)<br><SOT-363><br>(6) (5) (4)<br>(1) (2) (3)<br>Abbreviated symbol : K33<br>**----- End of picture text -----**<br>


##  **Packaging specifications** 

|Type|Package|Taping|
|---|---|---|
||Code|TN|
||Basic ordering unit (pieces)|3000|
|UM6K33N|||



##  **Inner circuit** 

**==> picture [139 x 116] intentionally omitted <==**

**----- Start of picture text -----**<br>
(6) (5) (4)<br>∗ 1<br>∗ 2 ∗ 2<br>∗ 1<br>(1) Tr1 SOURCE<br>(2) Tr1 GATE<br>(1) (2) (3) (3) Tr2 DRAIN<br>(4) Tr2 SOURCE<br>∗ 1 ESD PROTECTION DIODE (5) Tr2 GATE<br>∗ 2 BODY DIODE (6) Tr1 DRAIN<br>**----- End of picture text -----**<br>


 **Absolute maximum ratings** (Ta = 25C) 

|**Absolute maximum ratingsgss **(Ta = 25C)Ta = 25C)C)C)|**Absolute maximum ratingsgss **(Ta = 25C)Ta = 25C)C)C)|(Ta = 25C)Ta = 25C)C)C))|||
|---|---|---|---|---|
|Parameter||Symbol<br>~~a~~|Limits<br>~~a~~|Unit|
|Drain-source voltage||VDSS<br>~~a~~<br>~~ee~~|50<br>~~a~~<br>~~ee~~|V<br>~~ee~~|
|Gate-source voltage||VGSS<br>~~ee~~<br>~~ee~~|8<br>~~ee~~|V<br>~~ee~~|
|Drain current|Continuous<br>~~ee~~|ID<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|200<br>~~ee~~<br>~~ee~~|mA<br>~~ee~~|
||Pulsed<br>~~es~~|IDP<br>*1<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~es~~|800<br>~~es~~|mA|
|Source current<br>(Body Diode)|Continuous<br>~~es~~|Is<br>~~ee~~<br>~~es~~<br>~~es~~<br>~~ee~~|125<br>~~es~~|mA|
||Pulsed<br>~~ee~~|Isp<br>*1<br>~~es~~<br>~~ee~~<br>~~ee~~<br>~~-_~~|800<br>~~ee~~<br>~~-_~~|mA|
|Power dissipation||PD<br>*2<br>~~ee~~<br>~~-_~~<br>~~|~~|150<br>~~-_~~<br>~~|~~|mW/TOTAL|
||||120<br>~~-_~~<br>~~|~~|mW/ELEMENT|
|Channeltemperature||Tch<br>~~-_~~<br>~~|~~<br>~~a~~|150<br>~~-_~~<br>~~|~~<br>~~a~~|C|
|Range of storage temperature||Tstg<br>~~a~~|55 to +150<br>~~a~~|C|



- *1 Pw10s, Duty cycle1% 

- *2 Each terminal mounted on a recommended land. 

##  **Thermal resistance** 

|**Thermal resistance**||||
|---|---|---|---|
|Parameter|Symbol|Limits|Unit|
|Channel to ambient|Rth (ch-a)<br>*|833|°C /W/TOTAL|
|||1042|°C / W /ELEMENT|



- Each terminal mounted on a recommended land. 

www.rohm.com 

**2010.01 - Rev.A** 

1/5 

○c 2010 ROHM Co., Ltd. All rights reserved. 

Data Sheet 

**UM6K33N** 

##  **Electrical characteristics** (Ta = 25C) 

<It is the same ratings for Tr1 and Tr2.> 

|Parameter|Symbol|Min.|Typ.|Max.|Unit|Conditions|
|---|---|---|---|---|---|---|
|Gate-source leakage|IGSS|-|-|10|A|VGS=8V,VDS=0V|
|Drain-source breakdown voltage|V(BR)DSS|50|-|-|V|ID=1mA,VGS=0V|
|Zerogate voltage drain current|IDSS|-|-|1|A|VDS=50V,VGS=0V|
|Gate threshold voltage|VGS (th)|0.3|-|1.0|V|VDS=10V,ID=1mA|
|Static drain-source on-state<br>resistance|RDS (on)<br>*|-|1.6|2.2||ID=200mA,VGS=4.5V|
|||-|1.7|2.4||ID=200mA,VGS=2.5V|
|||-|1.9|2.7||ID=100mA,VGS=1.8V|
|||-|2.0|4.0||ID=40mA,VGS=1.5V|
|||-|2.4|7.2||ID=20mA,VGS=1.2V|
|Forward transfer admittance|l Yfsl<br>*|0.4|-|-|S|ID=200mA,VDS=10V|
|Input capacitance|Ciss|-|25|-|pF|VDS=10V<br>VGS=0V<br>f=1MHz|
|Output capacitance|Coss|-|6|-|pF||
|Reverse transfer capacitance|Crss|-|3|-|pF||
|Turn-on delaytime|td(on)<br>*****|-|4|-|ns|ID=100mA, VDD 30V<br>VGS=4.5V<br>RL=300<br>RG=10|
|Rise time|tr<br>*****|-|6|-|ns||
|Turn-off delaytime|td(off)<br>*****|-|15|-|ns||
|Fall time|tf<br>*****|-|55|-|ns||



*Pulsed 

##  **Body diode characteristics** (Source-Drain) (Ta = 25C) 

<It is the same ratings for Tr1 and Tr2.> 

|Parameter|Symbol|Min.|Typ.|Max.|Unit|Conditions|
|---|---|---|---|---|---|---|
|Forward voltage|VSD<br>*|-|-|1.2|V|Is=200mA, VGS=0V|



*Pulsed 

www.rohm.com ○c 2010 ROHM Co., Ltd. All rights reserved. 

**2010.01 - Rev.A** 

2/5 

Data Sheet 

**UM6K33N** 

##  **Electrical characteristic curves** 

**==> picture [465 x 580] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.4 0.4 1<br>VGS= 4.5V Ta=25°C VDS= 10V<br>VGS= 4.5V VGS= 2.5V Pulsed Pulsed<br>0.3 VV V GSGSGS= 2.5V =1.8V =1.5V TaPulsed=25°C 0.3 VVGSGS=1.8V=1.5V 0.1 Ta= 125°C<br>VGS= 1.2V Ta= 75°C<br>0.2 0.2 VGS=1.2V Ta= 25°C<br>Ta= - 25°C<br>VGS= 1.0V VGS=1.0V 0.01<br>0.1 0.1<br>VGS= 0.8V VGS=0.8V<br>0 0 0.001<br>0 0.2 0.4 0.6 0.8 1 0 2 4 6 8 10 0 0.5 1 1.5 2<br>DRAIN-SOURCE VOLTAGE : VDS[V] DRAIN-SOURCE VOLTAGE : VDS[V] GATE-SOURCE VOLTAGE : VGS[V]<br>Fig.1 Typical Output Characteristics( I ) Fig.2 Typical Output Characteristics( II ) Fig.3  Typical Transfer Characteristics<br>10010 Ta= 25Pulsed°C VV V VGS GSGS GS=1.2V= 1.5V = 1.8V = 2.5V 10010 VPulsedGS= 4.5V TaTa=75 Ta=25°C Ta= -25°C=125 ° C°C 10010 VPulsedGS= 2.5V Ta=125°CTa=75°C Ta Ta = = 25 -25 °C °C<br>VGS= 4.5V<br>1 1 1<br>0.1 0.1 0.1<br>0.01 0.1 1 0.01 0.1 1 0.01 0.1 1<br>DRAIN-CURRENT : ID[A] DRAIN-CURRENT : ID[A] DRAIN-CURRENT : ID[A]<br>Fig.4  Static Drain-Source On-State Fig.5  Static Drain-Source On-State Fig.6  Static Drain-Source On-State<br>          Resistance vs. Drain Current( I )            Resistance vs. Drain Current( II )            Resistance vs. Drain Current( III )<br>100 100 100<br>PulsedVGS= 1.8V Ta=125°C VPulsedGS= 1.5V Ta=125°C VPulsedGS= 1.2V<br>Ta=75°C Ta=75°C<br>Ta=25°C Ta=25°C<br>10 Ta= -25°C 10 Ta= -25°C 10<br>1 1 1 Ta Ta=75 =125 °C °C<br>Ta=25°C<br>Ta= -25°C<br>0.1 0.1 0.1<br>0.01 0.1 1 0.01 0.1 1 0.01 0.1 1<br>DRAIN-CURRENT : ID[A] DRAIN-CURRENT : ID[A] DRAIN-CURRENT : ID[A]<br>Fig.7  Static Drain-Source On-State Fig.8  Static Drain-Source On-State Fig.9 Static Drain-Source On-State<br>           Resistance vs. Drain Current( IV )            Resistance vs. Drain Current( V )           Resistance vs. Drain Current( VI )<br>DRAIN CURRENT : I[A]D DRAIN CURRENT : I[A]D DRAIN CURRENT : I[A]D<br>RESISTANCE : R](on)[DS RESISTANCE : R](on)[DS RESISTANCE : R](on)[DS<br>STATIC DRAIN-SOURCE ON-STATE STATIC DRAIN-SOURCE ON-STATE STATIC DRAIN-SOURCE ON-STATE<br>] ] ]<br>(on)[ (on)[<br>DS DS<br>RESISTANCE : R RESISTANCE : R RESISTANCE : RDS(on)[<br>STATIC DRAIN-SOURCE ON-STATE STATIC DRAIN-SOURCE ON-STATE STATIC DRAIN-SOURCE ON-STATE<br>**----- End of picture text -----**<br>


www.rohm.com 

**2010.01 - Rev.A** 

3/5 

○c 2010 ROHM Co., Ltd. All rights reserved. 

Data Sheet 

**UM6K33N** 

**==> picture [463 x 376] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 1 10<br>V DS = 10V VGS=0V 9 Ta=25°C<br>Pulsed Pulsed Pulsed<br>8<br>Ta= -25°C 7 ID= 20mA<br>Ta=25 Ta=75°C° C 0.1 65 ID=200mA<br>Ta=125°C<br>4<br>Ta=125°C<br>3<br>Ta=75°C<br>Ta=25°C 2<br>Ta=-25°C 1<br>0.1 0.01 0<br>0.001 0.01 0.1 1 0 0.5 1 1.5 0 5 10<br>DRAIN-CURRENT : ID[A] SOURCE-DRAIN VOLTAGE : VSD [V] GATE-SOURCE VOLTAGE : VGS[V]<br>Fig.10 Forward Transfer Admittance Fig.11  Reverse Drain Current Fig.12  Static Drain-Source On-State<br>          vs. Drain Current          vs. Sourse-Drain Voltage              Resistance vs. Gate Source Voltage<br>1000 1000<br>Ta=25°C Ta=25°C<br>V DD =30V f=1MHz<br>t f VGS=4.5V 100 VGS=0V C iss<br>100 R G =10<br>td(off) Pulsed<br>10<br>10 tr 1 C rss C oss<br>td(on)<br>1 0.1<br>0.01 0.1 1 0.01 0.1 1 10 100<br>DRAIN-CURRENT : ID[A] DRAIN-SOURCE VOLTAGE : VDS[V]<br>Fig.13  Switching Characteristics Fig.14  Typical Capacitance<br>            vs. Drain-Source Voltage<br> [A]s (ON)[]<br>DS<br>SOURCE CURRENT : I RESISTANCE : R<br>STATIC DRAIN-SOURCE ON-STATE<br>FORWARD TRANSFER  ADMITTANCE : |Yfs| [S]<br>SWITCHING TIME : t [ns] CAPACITANCE : C [pF]<br>**----- End of picture text -----**<br>


www.rohm.com 

**2010.01 - Rev.A** 

4/5 

○c 2010 ROHM Co., Ltd. All rights reserved. 

Data Sheet 

**UM6K33N** 

##  **Measurement circuits** 

**==> picture [298 x 100] intentionally omitted <==**

**----- Start of picture text -----**<br>
Pulse width<br>VGS ID<br>VDS 50% 90% 50%<br>RL VGS 10%<br>VDS<br>D.U.T. 10% 10%<br>RG VDD 90% 90%<br>td(on) tr td(off) tf<br>ton toff<br>**----- End of picture text -----**<br>


Fig.1-1  Switching time measurement circuit 

Fig.1-2  Switching waveforms 

##  **Notice** 

This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. 

www.rohm.com 

**2010.01 - Rev.A** 

5/5 

○c 2010 ROHM Co., Ltd. All rights reserved. 

Notice 

## **N o t e s** 

No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. 

The content specified herein is subject to change for improvement without notice. 

The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. 

Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 

Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. 

The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. 

The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). 

The Products specified in this document are not designed to be radiation tolerant. 

While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. 

Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. 

The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuelcontroller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. 

If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. 

**==> picture [80 x 61] intentionally omitted <==**

Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. 

## ROHM  Customer Support System 

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www.rohm.com © 2010  ROHM Co., Ltd. All rights reserved. 

R1010A 



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