# Silicon Carbide Schottky Diode, Single, 1.2 kV, 10 A, 51 nC, TO-247

![Product image](https://novapart.co/image/farnell:4222005/)

**URL**: https://novapart.co/products/UJ3D1210K2/silicon-carbide-schottky-diode-single-12-kv-10-a
**SKU**: UJ3D1210K2
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Silicon Carbide Schottky Diodes
**Price**: €3.4500
**Stock**: 200+
**Lead Time**: 190 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (17-Jan-2023) |
| No. Of Pins | 2 Pin |
| Product Range | - |
| Qualification | AEC-Q101 |
| Diode Mounting | Through Hole |
| Diode Case Style | TO-247 |
| Diode Configuration | Single |
| Average Forward Current | 10A |
| Total Capacitive Charge | 51nC |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 1.2kV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4222005/)

## 10A -1200V SiC Schottky Diode 

Rev. B, April 2020 

## DATASHEET 

## Description 

## UJ3D1210K2 

UnitedSiC offers the 3[rd] generation of  high performance SiC MergedPiN-Schottky (MPS) diodes. With zero reverse recovery charge and 175°C maximum junction temperature, these diodes are ideally suited for high frequency and high efficiency power systems with minimum cooling requirements. 

## Features 

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CASE CASE<br>1 2<br>1 2<br>**----- End of picture text -----**<br>


- w  Maximum operating temperature of 175°C 

- w  Easy paralleling 

- w  Extremely fast switching not dependent on temperature 

- w  No reverse or forward recovery 

- w  Enhanced surge current capability, MPS structure 

- w  100% UIS tested 

- w  AEC-Q101 qualified 

## Typical applications 

- w  Power converters 

Part Number Package Marking UJ3D1210K2 TO-247-2L UJ3D1210K2 ~~———_+—_}—__—~~ 

- w  Industrial motor drives 

- w  Switch mode power supplies 

- w  Power factor correction modules 

Datasheet: UJ3D1210K2 

Rev. B, April 2020 

1 

## Maximum Ratings 

|Parameter|Symbol<br>Value<br>Test Conditions|Units|
|---|---|---|
|Surgepeak reverse voltage<br>DC blockingvoltage<br>Repetitivepeak reverse voltage, TJ=25°C<br>Non-repetitive forward surge current<br>sine halfwave<br>Maximum DC forward current|VR<br>1200<br>VRRM<br>1200<br>VRSM<br>1200<br>IF<br>10<br>120<br>110<br>TC= 146°C<br>TC= 25°C, tp= 10ms<br>Non-repetitive forward surge current<br>IFSM<br>TC= 110°C, tp= 10ms<br>~~a~~<br>~~eeee~~<br>~~Aed~~<br>~~pF~~|V<br>V<br>V<br>A<br>A|
|Repetitive forward surge current<br>sine halfwave, D=0.1|39.4<br>24<br>Repetitive forward surge current<br>IFRM<br>TC= 25°C, tp= 10ms<br>TC= 110°C, tp= 10ms<br>~~pF~~|A|
|Non-repetitive peak forward current|720<br>720<br>IF,max<br>TC= 25°C, tp= 10ms<br>TC= 110°C, tp= 10ms<br>~~pF~~|A|
|Soldering temperatures, wavesoldering only<br>allowed at leads<br>Maximumjunction temperature<br>Operatingand storage temperature<br>i2t value<br>Power dissipation|72<br>60<br>136.4<br>26.4<br>TJ,max<br>175<br>TJ,TSTG<br>-55 to 175<br>Tsold<br>260<br>1.6mm from case for 10s<br>i2dt<br>TC= 25°C, tp= 10ms<br>TC= 110°C, tp= 10ms<br>Ptot<br>TC= 25°C<br>TC= 146°C<br>~~pF~~<br>~~—a~~<br>~~es~~|°C<br>°C<br>°C<br>A2s<br>W|



## Thermal Characteristics 

|||||Value|||
|---|---|---|---|---|---|---|
|Parameter|Symbol|Test Conditions|Min|Typ|Max|Units|
|Thermal resistance, junction-to-case|RqJC|||0.83|1.1|°C/W|



Datasheet: UJ3D1210K2 

Rev. B, April 2020 

2 

## Electrical Characteristics (TJ = +25°C unless otherwise specified) 

|Parameter|Symbol|Test Conditions|Min<br>Typ<br>Max<br>Value|Min<br>Typ<br>Max<br>Value|Min<br>Typ<br>Max<br>Value|Units|
|---|---|---|---|---|---|---|
||||Min|Typ|||
|Forward voltage|VF|IF= 10A, TJ=25°C|-|1.4|1.6<br>2.3<br>2.6|V|
|||IF= 10A, TJ=150°C|-|1.85|||
|||IF= 10A, TJ=175°C|-|2|||
|Reverse current|IR|VR=1200V, TJ=25°C|-<br>=25°C|10|110|mA|
|||VR=1200V, TJ=175°C|-<br>=175°C|450|||
|Total capacitive charge(1)|QC|VR=800V||51||nC|
|Total capacitance|C|VR=1V, f = 1MHz||510||pF|
|||VR=400V, f = 1MHz||48|||
|||VR=800V, f = 1MHz||41|||
|Capacitance stored energy|EC|VR=800V||15||mJ|



(1)  Qc is independent on TJ, diF/dt, and IF as shown in the application note USCi_AN0011. 

## Typical Performance Diagrams 

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20 80<br>- 55°C<br>70<br>15 // 60   25°C100°C Sf<br>150°C<br>50<br>175°C Lf<br>py [(7] |<br>10 40 ava<br>- 55°C<br>  25°C 30<br>100°C<br>5 20<br>150°C<br>175°C 10<br>0 0<br>0 1 2 3 4 0 1 2 3 4 5 6<br>Forward Voltage, VF (V) Forward Voltage, VF (V)<br>(A) (A)<br>F F<br>Forward Current, I Forward Current, I<br>**----- End of picture text -----**<br>


Figure 1. Typical forward characteristics 

Figure 2. Typical forward characteristics in surge current 

Datasheet: UJ3D1210K2 

Rev. B, April 2020 

3 

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1.E-0310 [-3]<br>- 55°C<br>  25°C<br>1.E-0410 [-4] 125°C<br>= 175°C<br>1.E-0510 [-5] ee<br>e T<br>1.E-0610 [-6]<br>iAanane A<br>1.E-0710 [-7]<br>500 600 700 800 900 1000 1100 1200<br>Reverse Voltage, VR (V)<br>Figure 3. Typical reverse characteristics<br>120<br>D = 0.1<br>D = 0.3<br>100<br>D = 0.5<br>D = 0.7<br>80<br>pS D = 1.0<br>60<br>prs<br>40<br>20<br>SaaS<br>0<br>eee [pena]<br>25 50 75 100 125 150 175<br>TC ( ° C)<br>(A)<br>R<br>Reverse Current, I<br>(A)<br>F<br>Forward Current, I<br>**----- End of picture text -----**<br>


Figure 5. Diode forward current 

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150<br>125<br>100<br>PX<br>75<br>Nee<br>50<br>| Ne<br>25<br>aSSN<br>0<br>25 50 75 100 125 150 175<br>TC (°C)<br>(W)<br>Tot<br>Power Disspiation, P<br>**----- End of picture text -----**<br>


Figure 4. Power dissipation 

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1<br>D = 0.5<br>D = 0.3<br>0.1<br>D = 0.1<br>D = 0.05<br>D = 0.02<br>Single Pulse<br>0.01<br>1.E-05 1.E-04 1.E-03 1.E-02 1.E-01<br>Time , t (s)<br>(°C/W)<br>JC<br>q<br>Max. Thermal Impedance, Z<br>**----- End of picture text -----**<br>


Figure 6. Maximum transient thermal impedance 

Datasheet: UJ3D1210K2 

Rev. B, April 2020 

4 

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**----- Start of picture text -----**<br>
700 80<br>70<br>600 — | | | po] | |<br>60<br>500<br>50<br>400<br>Dee ee 40 re ee<br>300<br>NE 30 Aa<br>200<br>20 QC =  ׬0𝑉𝑅 𝐶 𝑉𝑑𝑉<br>100 PN 10 Lo | 0<br>0 SUA ierrdl 0 ft [tt]<br>0.1 1 10 100 1000 0 200 400 600 800 1000 1200<br>Reverse Voltage, VR (V) Reverse Voltage, VR (V)<br>(nC)<br>C<br>Q<br>Capacitance, C (pF)<br>**----- End of picture text -----**<br>


Figure 7. Capacitance vs. reverse voltage at 1MHz 

Figure 8. Typical capacitive charge vs. reverse voltage 

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35<br>2<br>30<br>25<br>CET<br>Pf<br>20<br>Pf<br>15<br>10 PK<br>OK<br>5<br>Annee<br>0<br>0 200 400 600 800 1000 1200<br>Reverse Voltage, VR (V)<br>J)<br>m<br>(<br>C<br>E<br>**----- End of picture text -----**<br>


Figure 9. Typical capacitance stored energy vs. reverse voltage 

Datasheet: UJ3D1210K2 

Rev. B, April 2020 

5 

## Disclaimer 

UnitedSiC reserves the right to change or modify any of the products and their inherent physical and technical specifications without prior notice. UnitedSiC assumes no responsibility or liability for any errors or inaccuracies within. 

Information on all products and contained herein is intended for description only. No license, express or implied, to any intellectual property rights is granted within this document. 

UnitedSiC assumes no liability whatsoever relating to the choice, selection or use of the UnitedSiC products and services described herein. 

Datasheet: UJ3D1210K2 

Rev. B, April 2020 

6 



## Links

- [View this product on Novapart](https://novapart.co/products/UJ3D1210K2/silicon-carbide-schottky-diode-single-12-kv-10-a)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/unitedsic/uj3d1210k2/sic-schottky-diode-1-2kv-10a-to/dp/4222005)
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