# Silicon Carbide Schottky Diode, Dual Common Cathode, 650 V, 20 A, 46 nC, TO-247

![Product image](https://novapart.co/image/farnell:4014279/)

**URL**: https://novapart.co/products/UJ3D06520KSD/silicon-carbide-schottky-diode-dual-common-cathode
**SKU**: UJ3D06520KSD
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Silicon Carbide Schottky Diodes
**Price**: €3.3100
**Stock**: 10+
**Lead Time**: 190 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (17-Jan-2023) |
| No. Of Pins | 3 Pin |
| Product Range | - |
| Qualification | AEC-Q101 |
| Diode Mounting | Through Hole |
| Diode Case Style | TO-247 |
| Diode Configuration | Dual Common Cathode |
| Average Forward Current | 20A |
| Total Capacitive Charge | 46nC |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 650V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4014279/)

Gen-III  |  20A - 650V SiC Schottky Diode  |  UJ3D06520KSD **.** 

Datasheet **.** 

## Description 

United Silicon Carbide, Inc. offers the 3[rd] generation of  high performance SiC Merged-PiN-Schottky (MPS) diodes. With zero reverse recovery charge and 175°C maximum junction temperature, these diodes are ideally suited for high frequency and high efficiency power systems with minimum cooling requirements. 

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CASE<br>CASE<br>)<br>1  2  3<br>1 2  3<br>**----- End of picture text -----**<br>


Part Number Package Marking UJ3D06520KSD TO-247-3L UJ3D06520KSD 

## Features 

- w 175°C maximum operating junction temperature 

- w Easy paralleling 

- w Extremely fast switching not dependent on temperature 

- w No reverse or forward recovery 

## Typical Applications 

   - w Power converters 

   - w Industrial motor drives 

   - w Switching-mode power supplies 

   - w Power factor correction modules 

- w Enhanced surge current capability, MPS structure 

- w Excellent thermal performance, Ag sintered 

- w 100% UIS tested 

- w AEC-Q101 qualified 

## **Maximum Ratings** 

|**Parameter**|**Symbol**|**Test Conditions**|**Value (Leg/Device)**|**Units**|
|---|---|---|---|---|
|DC blocking voltage|VR<br>~~a~~<br>~~es~~||650|V|
|Repetitive peak reverse voltage, Tj=25°C|VRRM<br>~~es~~||650|V|
|Surge peak reverse voltage|VRSM<br>~~es~~||650|V|
|Maximum DC forward current|IF<br>~~a~~|TC= 152°C<br>|10/20<br>|A|
|Non-repetitive forward surge current<br>sine halfwave|IFSM<br>~~a ee~~|TC= 25°C, tp= 10ms<br>~~ee~~|70/140<br>~~ee~~|A|
|||TC= 110°C, tp=10ms<br>~~ee~~|60/120<br>~~ee~~||
|Repetitive forward surge current<br>sine halfwave, D=0.1|IFRM|TC= 25°C, tp= 10ms<br>~~ee~~<br>~~ee~~|45.9/91.8<br>~~ee~~<br>~~ee~~|A|
|||TC= 110°C, tp=10ms<br>~~ee~~<br>~~ee~~|28.7/57.4<br>~~ee~~<br>~~ee~~||
|Non-repetitive peak forward current|IF,max|TC= 25°C, tp=10ms<br>~~ee~~<br>~~ee~~|455/910<br>~~ee~~<br>~~ee~~|A|
|||TC= 110°C, tp=10ms<br>~~ee~~<br>~~ee~~|455/910<br>~~ee~~<br>~~ee~~||
|i2t value|i2dt|TC= 25°C, tp=10ms<br>~~ee~~<br>~~ee~~|24.5/98<br>~~ee~~<br>~~ee~~|A2s|
|||TC= 110°C, tp=10ms<br>~~ee~~<br>~~ee~~|18/72<br>~~ee~~<br>~~ee~~||
|Power dissipation|PTot<br>~~ee~~|TC= 25°C<br>~~ee~~<br>~~ee~~|136.4/272.8<br>~~ee~~<br>~~ee~~|W|
|||TC= 152°C<br>~~ee~~<br>~~ee~~|20.9/41.8<br>~~ee~~<br>~~ee~~||
|Maximum junction temperature|TJ,max<br>~~ee~~<br>~~es~~|~~ee~~|175<br>~~ee~~|°C|
|Operating and storage temperature|TJ, TSTG<br>~~ee~~<br>~~es~~|~~ee~~|-55 to 175<br>~~ee~~|°C|
|Soldering temperatures, wavesoldering only<br>allowed at leads|Tsold<br>~~es~~|1.6mm from case for<br>10s|260|°C|



For more information go to www.unitedsic.com. 

Rev. B,  April 2018 

1 

## Gen-III  |  20A - 650V SiC Schottky Diode  |  UJ3D06520KSD **.** 

Datasheet **.** 

## **Electrical Characteristics** 

TJ = +25°C unless otherwise specified 

|**Parameter**|**Symbol**|**Test Conditions**|**Value (Leg/Device)**|**Max**<br>**Units**<br>**Value (Leg/Device)**|
|---|---|---|---|---|
||||**Min**<br>**Typ**||
|Forward voltage<br>~~——————~~|VF<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~——————~~|IF= 10/20A, TJ= 25°C<br>~~ee~~|-<br>1.5<br>~~ee~~<br>~~ee~~|1.7<br>2<br>2.1<br>V<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~——————~~|
|||IF= 10/20A, TJ=150°C<br>~~ee~~<br>~~ee~~|-<br>1.68<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~es~~||
|||IF= 10/20A, TJ=175°C<br>~~ee~~<br>~~ee~~<br>~~——————~~|-<br>1.75<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~es~~<br>~~——————~~||
|Reverse current<br>~~——————~~<br>~~a~~|IR<br>~~ee~~<br>~~——————~~<br>~~a~~|VR=650V, Tj=25°C<br>~~ee~~<br>~~——————~~|-<br>10/20<br>~~ee~~<br>~~es~~<br>~~——————~~|60/120<br>150/300<br>mA<br>~~ee~~<br>~~——————~~<br>~~ee~~|
|||VR=650V, TJ=175°C<br>~~——————~~<br>~~ee~~|-<br>150/300<br>~~——————~~<br>~~ee~~||
|Total capacitive charge(1)<br>~~——————~~<br>~~a~~|QC<br>~~——————~~<br>~~a~~|VR=400V<br>~~——————~~<br>~~ee~~|23/46<br>~~——————~~<br>~~ee~~<br>~~es~~|nC<br>~~——————~~<br>~~ee~~|
|Total capacitance<br>~~a~~<br>~~es~~|C<br>~~a~~<br>~~ee~~<br>~~es~~<br>~~es~~<br>~~es~~|VR=1V, f=1MHz<br>~~ee ~~<br>~~ee~~|327/654<br> ~~ee~~<br>~~ee~~<br>~~es~~|327/654<br>pF<br>~~ee~~<br>~~ee~~<br>~~es~~<br>~~es~~|
|||VR=300V, f=1MHz<br>~~ee~~<br>~~es~~|38/76<br>~~ee~~<br>~~es~~<br>~~es~~<br>~~ee~~||
|||VR=600V, f=1MHz<br>~~es~~<br>~~es~~|34/68<br>~~es~~<br>~~es~~<br>~~ee~~||
|Capacitance stored energy<br>~~es~~|EC<br>~~es~~<br>~~es~~|VR=400V<br>~~es~~|3.4/6.8<br>~~es~~<br>~~ee~~|3.4/6.8<br>mJ<br>~~es~~|



(1) Qc is independent on Tj, diF/dt, and IF as shown in the application note USCi_AN0011. 

## **Thermal characteristics** 

|**Parameter**|**symbol**|**Test Conditions**|**Value (Leg/Device)**|**Max**<br>**Value (Leg/Device)**<br>**Units**|
|---|---|---|---|---|
||||**Min**<br>**Typ**||
|Thermal resistance|RqJC||0.82/0.41|0.82/0.41<br>1.1/0.55<br>°C/W|



## **Typical Performance** 

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20 70<br>/<br>- 55°C<br>- 55°C 7<br>PZ a<br>60   25°C<br>  25°C<br>100°C<br>15 100°C . [‘] [4] |<br>150°C / 50 150°C 4 4<br>175°C<br>175°C<br>40<br>10<br>30<br>20<br> # f e<br>5 Per leg<br>Per leg<br>10<br>/ mya<br>ft ifSia<br>0 0<br>0 0.5 1 1.5 2 2.5 3 0 1 2 3 4 5 6<br>Forward Voltage, VF (V)  Forward Voltage, VF (V)<br> (A)   (A)<br>F F<br>Forward Current, I Forward Current, I<br>**----- End of picture text -----**<br>


_**Figure 1 Typical forward characteristics per leg**_ 

_**Figure 2 Typical forward characteristics in surge current per leg**_ 

For more information go to www.unitedsic.com. 

Rev. B,  April 2018 

2 

Gen-III  |  20A - 650V SiC Schottky Diode  |  UJ3D06520KSD **.** 

Datasheet **.** 

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1.E-1 0 -3 3 160<br>- 55°C Per leg  140 Per leg<br>  25°C<br>1.E-1 0 -4 4 125°C 120<br>175°C , ° 7 100 \<br>1.E-1 0 -5 5 -id tT 7 80 PN \<br>oaa7 60 PN\<br>1.E-1 0 -6 6 5 7 “ L 7 VAA 40 PN\<br>20<br>1.E-1 0 -7 7 “OLZ 0 NN<br>200 250 300 350 400 450 500 550 600 650 25 50 75 100 125 150 175<br>Reverse Voltage, VR (V)  TC (°C)<br>Figure 3 Typical reverse characteristics per leg Figure 4 Power dissipation per leg<br>120<br>D = 0.1<br>Per leg  D = 0.3 1 Per leg<br>100<br>a D = 0.5<br>| ao<br>D = 0.7<br>80 D = 1.0 tee eta = Tt 4<br>x<br>~ “3<br>aN Liq x D = 0.5<br>60<br>— \ 0.1 4s D = 0.3<br>~~ .<br>—  ~ \ ey D = 0.1<br>40<br>D = 0.05<br>a ~-- = = > \ D = 0.02<br>20<br>Single Pulse<br>0 0.01<br>25 50 75 100 125 150 175 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01<br>TC (°C)  Time , t (s)<br> (W)<br> (A) R Tot<br>Reverse Current, I Power Disspiation, P<br> (°C/W)<br> (A) F JC q<br>Forward Current,I Max. Thermal Impedance, Z<br>**----- End of picture text -----**<br>


_**Figure 5 Diode forward current per leg**_ 

_**Figure 6 Maximum transient thermal impedance per leg**_ 

For more information go to www.unitedsic.com. 

Rev. B,  April 2018 

3 

Gen-III  |  20A - 650V SiC Schottky Diode  |  UJ3D06520KSD **.** 

Datasheet **.** 

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**----- Start of picture text -----**<br>
500 35<br>TT<br>450<br>30 Per leg<br>400 Per leg<br>350 >eee ee 25 peeLO<br>300<br>20<br>—\ ae<br>250<br>= PK<br>oN 15<br>200<br>150 10<br>100 pO PY Tt QC =  0𝑉𝑅 𝐶 ft 𝑉𝑑𝑉<br>5<br>PIN 7A<br>50<br>0 SU ae 0 ARERR<br>0.1 1 10 100 1000 0 100 200 300 400 500 600 700<br>Reverse Voltage, VR (V)  Reverse Voltage, VR (V)<br> (nC)<br>C<br>Q<br>Capacitance, C (pF)<br>**----- End of picture text -----**<br>


_**Figure 7 Capacitance per leg vs. reverse voltage at 1MHz**_ 

_**Figure 8 Typical capacitive charge per leg vs. reverse voltage**_ 

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**----- Start of picture text -----**<br>
9<br>8<br>Ee<br>7 Per leg<br>pf<br>6<br>Pf<br>5<br>4 Po fe<br>ee ae<br>3<br>2 Po Ke<br>PK<br>10 ee<br>0 100 200 300 400 500 600 700<br>Reverse Voltage, VR (V)<br>J)<br>m<br> (<br>C<br>E<br>**----- End of picture text -----**<br>


_**Figure 9 Typical capacitance stored energy per leg vs. reverse voltage**_ 

For more information go to www.unitedsic.com. 

Rev. B,  April 2018 

4 

Gen-III  |  20A - 650V SiC Schottky Diode  |  UJ3D06520KSD **.** 

Datasheet **.** 

## **Disclaimer** 

United Silicon Carbide, Inc. reserves the right to change or modify any of the products and their inherent physical and technical specifications without prior notice. United Silicon Carbide, Inc. assumes no responsibility or liability for any errors or inaccuracies within. 

Information on all products and contained herein is intended for description only. No license, express or implied, to any intellectual property rights is granted within this document. 

United Silicon Carbide, Inc. assumes no liability whatsoever relating to the choice, selection or use of the United Silicon Carbide, Inc. products and services described herein. 

For more information go to www.unitedsic.com. 

Rev. B,  April 2018 

5 



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- [Supplier page](https://es.farnell.com/onsemi/uj3d06520ksd/sic-schottky-diode-650v-20a-to/dp/4014279)
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