# Silicon Carbide Schottky Diode, Single, 650 V, 12 A, 29 nC, TO-220

![Product image](https://novapart.co/image/farnell:4014277/)

**URL**: https://novapart.co/products/UJ3D06512TS/silicon-carbide-schottky-diode-single-650-v-12-a
**SKU**: UJ3D06512TS
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Silicon Carbide Schottky Diodes
**Price**: €2.1700
**Stock**: 50+
**Lead Time**: 190 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (04-Feb-2026) |
| No. Of Pins | 2 Pin |
| Product Range | - |
| Qualification | AEC-Q101 |
| Diode Mounting | Through Hole |
| Diode Case Style | TO-220 |
| Diode Configuration | Single |
| Average Forward Current | 12A |
| Total Capacitive Charge | 29nC |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 650V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4014277/)

## 12A - 650V SiC Schottky Diode 

Rev. A, June 2019 

## DATASHEET 

## Description 

## UJ3D06512TS 

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CASE<br>CASE<br>1 2<br>1 2<br>**----- End of picture text -----**<br>


United Silicon Carbide, Inc. offers the 3[rd] generation of  high performance SiC Merged-PiN-Schottky (MPS) diodes. With zero reverse recovery charge and 175°C maximum junction temperature, these diodes are ideally suited for high frequency and high efficiency power systems with minimum cooling requirements. 

## Features 

- w  Maximum operating temperature of 175°C 

- w  Easy paralleling 

- w  Extremely fast switching not dependent on temperature 

- w  No reverse or forward recovery 

- w  Enhanced surge current capability, MPS structure 

- w  Excellent thermal performance, Ag sintered 

- w  100% UIS tested 

- w  AEC-Q101 qualified 

## Typical applications 

- w  Power converters 

|Part Number|Package|Marking|
|---|---|---|
|UJ3D06512TS|TO-220-2L|UJ3D06512TS|



- w  Industrial motor drives 

- w  Switch mode power supplies 

- w  Power factor correction modules 

Datasheet: UJ3D06512TS 

Rev. A, June 2019 

1 

## Maximum Ratings 

|Parameter|Symbol<br>Value<br>Test Conditions|Units|
|---|---|---|
|Repetitivepeak reverse voltage, TJ=25°C<br>Non-repetitive forward surge current<br>sine halfwave<br>Maximum DC forward current<br>DC blockingvoltage<br>Surgepeak reverse voltage|VR<br>650<br>VRRM<br>650<br>VRSM<br>650<br>IF<br>12<br>81<br>70<br>Non-repetitive forward surge current<br>IFSM<br>TC= 110°C, tp= 10ms<br>TC= 25°C, tp= 10ms<br>TC= 153°C<br>~~a~~<br>~~eeee~~<br>~~Aed~~<br>~~pF~~|V<br>V<br>V<br>A<br>A|
|Repetitive forward surge current<br>sine halfwave, D=0.1|53<br>32.5<br>Repetitive forward surge current<br>IFRM<br>TC= 25°C, tp= 10ms<br>TC= 110°C, tp= 10ms<br>~~pF~~|A|
|Non-repetitive peak forward current|480<br>480<br>IF,max<br>TC= 25°C, tp= 10ms<br>TC= 110°C, tp= 10ms<br>~~pF~~|A|
|Power dissipation<br>i2t value<br>Soldering temperatures, wavesoldering only<br>allowed at leads<br>Maximumjunction temperature<br>Operatingand storage temperature|32.8<br>24.5<br>187.5<br>27.5<br>TJ,max<br>175<br>TJ,TSTG<br>-55 to 175<br>Tsold<br>260<br>Ptot<br>TC= 25°C<br>TC= 153°C<br>i2dt<br>TC= 25°C, tp= 10ms<br>TC= 110°C, tp= 10ms<br>1.6mm from case for 10s<br>~~pF~~<br>~~—a~~<br>~~es~~|°C<br>°C<br>°C<br>W<br>A2s|



## Thermal Characteristics 

|||||Value|||
|---|---|---|---|---|---|---|
|Parameter|Symbol|Test Conditions|Min|Typ|Max|Units|
|Thermal resistance, junction-to-case|RqJC|||0.6|0.8|°C/W|



Datasheet: UJ3D06512TS 

Rev. A, June 2019 

2 

## Electrical Characteristics (TJ = +25°C unless otherwise specified) 

|||||Value|||
|---|---|---|---|---|---|---|
|Parameter|Symbol|Test Conditions|Min|Typ|Max|Units|
|||IF= 12A, TJ=25°C|-|1.5|1.7||
|Forward voltage|VF|IF= 12A, TJ=150°C|-|1.8|2.1|V|
|||IF= 12A, TJ=175°C|-|1.9|2.25||
|||VR=650V, TJ=25°C|-<br>=25°C|1.4|80||
|Reverse current|IR|VR=650V, TJ=175°C|-<br>=175°C|12||mA|
|Total capacitive charge(1)|QC|VR=400V||29||nC|
|||VR=1V, f = 1MHz||392|||
|Total capacitance|C|VR=300V, f = 1MHz||48||pF|
|||VR=600V, f = 1MHz||42|||
|Capacitance stored energy|EC|VR=400V||4.4||mJ|



(1)  Qc is independent on TJ, diF/dt, and IF as shown in the application note USCi_AN0011. 

## Typical Performance Diagrams 

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24 60<br>- 55°C<br>- 55°C<br>20 50   25°C<br>  25°C wie LL<br>100°C<br>100°C<br>16 40 150°C<br>150°C<br>Wa Vee<br>175°C<br>175°C<br>12 30<br>a fig<br>8 20<br>f F<br>4 10<br>0 ny Anne | 0 b 7 Annanf<br>0 0.5 1 1.5 2 2.5 3 0 1 2 3 4 5<br>Forward Voltage, VF (V) Forward Voltage, VF (V)<br>(A) (A)<br>F F<br>Forward Current, I Forward Current, I<br>**----- End of picture text -----**<br>


Figure 1. Typical forward characteristics 

Figure 2. Typical forward characteristics in surge current 

Datasheet: UJ3D06512TS 

Rev. A, June 2019 

3 

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1.E-0410 [-4]<br>- 55°C<br>  25°C<br>1.E-0510 [-5] 125°C<br>5<br>175°C<br>1.E-0610 [-6]<br>5 Y,<br>CL<br>1.E-0710 [-7]<br>LZ<br>1.E-0810 [-8]<br>200 250 300 350 400 450 500 550 600 650<br>Reverse Voltage, VR (V)<br>(A)<br>R<br>Reverse Current, I<br>**----- End of picture text -----**<br>


Figure 3. Typical reverse characteristics 

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160<br>D = 0.1<br>140 D = 0.3<br>2<br>D = 0.5<br>120<br>D = 0.7<br>D = 1.0<br>100<br>80 SS<br>60<br>40<br>20 PSN<br>0<br>25 50 75 100 125 150 175<br>TC ( ° C)<br>(A)<br>F<br>Forward Current, I<br>**----- End of picture text -----**<br>


Figure 5. Diode forward current 

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200<br>180<br>160<br>140 PN<br>120<br>100<br>80<br>60 See<br>Gee<br>40<br>20<br>PN<br>0<br>25 50 75 100 125 150 175<br>TC (°C)<br>Figure 4. Power dissipation<br>1<br>Hl TT<br>D = 0.5<br>D = 0.3<br>0.1<br>D = 0.1<br>D = 0.05<br>D = 0.02<br>Single Pulse<br>0.01<br>1.E-05 1.E-04 1.E-03 1.E-02 1.E-01<br>Time , t (s)<br>(W)<br>Tot<br>Power Disspiation, P<br>(°C/W)<br>JC<br>q<br>Max. Thermal Impedance, Z<br>**----- End of picture text -----**<br>


Figure 6. Maximum transient thermal impedance 

Datasheet: UJ3D06512TS 

Rev. A, June 2019 

4 

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**----- Start of picture text -----**<br>
600 45<br>40<br>500<br>35<br>400 ee 30 See<br>25<br>300 Ne ee ee eee<br>20<br>200 Nee 15 SESE<br>10 QC =  ׬0𝑉𝑅 𝐶 𝑉𝑑𝑉<br>100<br>PN foo<br>5<br>0 ee 0 f+ ++—<br>0.1 1 10 100 1000 0 100 200 300 400 500 600 700<br>Reverse Voltage, VR (V) Reverse Voltage, VR (V)<br>(nC)<br>C<br>Q<br>Capacitance, C (pF)<br>**----- End of picture text -----**<br>


Figure 7. Capacitance vs. reverse voltage at 1MHz 

Figure 8. Typical capacitive charge vs. reverse voltage 

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12<br>-LLLLLL<br>10<br>py<br>8<br>pO<br>6<br>740m<br>4<br>2 Zap 4nnn<br>7anna<br>0<br>0 100 200 300 400 500 600 700<br>Reverse Voltage, VR (V)<br>J)<br>m<br>(<br>C<br>E<br>**----- End of picture text -----**<br>


Figure 9. Typical capacitance stored energy vs. reverse voltage 

Datasheet: UJ3D06512TS 

Rev. A, June 2019 

5 

## Disclaimer 

United Silicon Carbide, Inc. reserves the right to change or modify any of the products and their inherent physical and technical specifications without prior notice. United Silicon Carbide, Inc. assumes no responsibility or liability for any errors or inaccuracies within. 

Information on all products and contained herein is intended for description only. No license, express or implied, to any intellectual property rights is granted within this document. 

United Silicon Carbide, Inc. assumes no liability whatsoever relating to the choice, selection or use of the United Silicon Carbide, Inc. products and services described herein. 

Datasheet: UJ3D06512TS 

Rev. A, June 2019 

6 



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- [Supplier page](https://es.farnell.com/unitedsic/uj3d06512ts/sic-schottky-diode-650v-12a-to/dp/4014277)
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