# Silicon Carbide Schottky Diode, Single, 650 V, 6 A, 14.5 nC, TO-220

![Product image](https://novapart.co/image/farnell:4014274/)

**URL**: https://novapart.co/products/UJ3D06506TS/silicon-carbide-schottky-diode-single-650-v-6-a
**SKU**: UJ3D06506TS
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Silicon Carbide Schottky Diodes
**Price**: €1.3500
**Stock**: 50+
**Lead Time**: 190 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 2 Pin |
| Product Range | - |
| Qualification | AEC-Q101 |
| Diode Mounting | Through Hole |
| Diode Case Style | TO-220 |
| Diode Configuration | Single |
| Average Forward Current | 6A |
| Total Capacitive Charge | 14.5nC |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 650V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4014274/)

Datasheet **.** 

## Gen-III  |  6A - 650V SiC Schottky Diode  |  UJ3D06506TS **.** 

## Description 

United Silicon Carbide, Inc. offers the 3[rd] generation of  high performance SiC Merged-PiN-Schottky (MPS) diodes. With zero reverse recovery charge and 175°C maximum junction temperature, these diodes are ideally suited for high frequency and high efficiency power systems with minimum cooling requirements. 

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CASE<br>CASE<br>1 2<br>1 2<br>**----- End of picture text -----**<br>


|Part Number|Package|Marking|
|---|---|---|
|UJ3D06506TS|TO-220-2L|UJ3D06506TS|



## Features 

- w 175°C maximum operating junction temperature 

- w Easy paralleling 

- w Extremely fast switching not dependent on temperature 

- w No reverse or forward recovery 

## Typical Applications 

   - w Power converters 

   - w Industrial motor drives 

   - w Switching-mode power supplies 

   - w Power factor correction modules 

- w Enhanced surge current capability, MPS structure 

- w Excellent thermal performance, Ag sintered 

- w 100% UIS tested 

- w AEC-Q101 qualified 

## **Maximum Ratings** 

|**Parameter**|**Symbol**|**Test Conditions**|**Value**|**Units**|
|---|---|---|---|---|
|DC blocking voltage|VR<br>~~a~~|~~a~~<br>~~a~~|650<br>~~a~~|V|
|Repetitive peak reverse voltage, Tj=25°C|VRRM<br>~~a~~<br>~~a~~|~~a~~<br>~~a~~<br>~~a~~|650<br>~~a~~|V|
|Surge peak reverse voltage|VRSM<br>~~a~~|~~a~~|650|V|
|Maximum DC forward current|IF<br>~~a~~<br>~~a~~|TC= 153°C<br>~~a~~<br>~~a~~|6|A|
|Non-repetitive forward surge current<br>sine halfwave|IFSM<br>~~pp~~<br>~~———~~|TC= 25°C, tp= 10ms<br>~~pp~~|45<br>~~pp~~|A|
|||TC= 110°C, tp=10ms<br>~~pp~~<br>~~a~~<br>~~———~~|39<br>~~pp~~||
|Repetitive forward surge current<br>sine halfwave, D=0.1|IFRM<br>~~pp~~<br>~~———~~|TC= 25°C, tp= 10ms<br>~~pp~~<br>~~———~~|29.5<br>~~pp~~|A|
|||TC= 110°C, tp=10ms<br>~~pp~~<br>~~———~~<br>~~es~~|17.9<br>~~pp~~<br>~~es~~||
|Non-repetitive peak forward current|IF,max<br>~~———~~<br>~~|~~|TC= 25°C, tp=10ms<br>~~———~~<br>~~es~~<br>~~|~~|320<br>~~es~~<br>~~|~~|A|
|||TC= 110°C, tp=10ms<br>~~———~~<br>~~|~~<br>~~ee~~|320<br>~~|~~<br>~~ee~~||
|i2t value|i2dt<br>~~|~~<br>~~—~~|TC= 25°C, tp=10ms<br>~~|~~<br>~~ee~~<br>~~—~~|10.1<br>~~|~~<br>~~ee~~|A2s|
|||TC= 110°C, tp=10ms<br>~~|~~<br>~~—~~<br>~~a~~|7.6<br>~~|~~||
|Power dissipation|PTot<br>~~—~~<br>~~_[~~|TC= 25°C<br>~~—~~<br>~~a~~<br>~~_[~~|93.4|W|
|||TC= 153°C<br>~~_[~~<br>~~ee~~|13.4<br>~~ee~~||
|Maximum junction temperature|TJ,max<br>~~_[~~<br>~~es~~<br>~~es~~|~~_[~~<br>~~ee~~<br>~~es~~<br>|175<br>~~ee~~<br>|°C|
|Operating and storage temperature|TJ, TSTG<br>~~es~~<br>~~es~~|~~es~~<br>|-55 to 175<br>|°C|
|Soldering temperatures, wavesoldering only<br>allowed at leads|Tsold<br>~~esa~~|1.6mm from case for<br>10s<br>~~a~~|260<br>~~a~~|°C|



For more information go to www.unitedsic.com. 

Rev. A,  September  2018 

1 

## Gen-III  |  6A - 650V SiC Schottky Diode  |  UJ3D06506TS **.** 

Datasheet **.** 

## **Electrical Characteristics** 

TJ = +25°C unless otherwise specified 

|TJ = +25°C unless otherwise specifiedJ = +25°C unless otherwise specified= +25°C unless otherwise specifiedpecifiedecified|||
|---|---|---|
||**Value**||
|**Parameter**|**Min**<br>**Typ**<br>**Max**<br>**Symbol**<br>**Test Conditions**|**Units**|
|(1)<br>Qis independent on T, di/dt, and I<br>Forward voltage<br>Reverse current<br>Total capacitive charge(1)<br>Capacitance stored energy<br>Total capacitance|-<br>1.5<br>1.7<br>-<br>1.8<br>2.1<br>-<br>1.9<br>2.25<br>-<br>0.7<br>40<br>-<br>6<br>QC<br>14.5<br>196<br>24<br>21<br>EC<br>2.2<br>/dt, and Ias shown in the application note USCi_AN0011.<br>VF<br>VR=1V, f=1MHz<br>C<br>VR=600V, f=1MHz<br>VR=400V<br>IF=6A, TJ=175°C<br>IF=6A, TJ=25°C<br>VR=300V, f=1MHz<br>VR=400V<br>VR=650V, TJ=175°C<br>IF=6A, TJ=150°C<br>VR=650V, TJ=25°C<br>IR<br>~~SS~~<br>~~ee~~<br>~~ee~~<br>~~a~~<br>~~tl e~~~~**ee** ~~~~**ee**e~~<br>~~es~~<br>~~e~~<br>~~e ee~~<br>~~SS~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|nC<br>mJ<br>mA<br>V<br>pF|



(1) Qc is independent on TJ, diF/dt, and IF as shown in the application note USCi_AN0011. 

## **Thermal characteristics** 

|||||**Value**|||
|---|---|---|---|---|---|---|
|**Parameter**|**symbol**|**Test Conditions**|**Min**|**Typ**|**Max**|**Units**|
|Thermal resistance, junction - case|RqJC|||1.2|1.6|°C/W|



## **Typical Performance** 

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12 30<br>- 55°C<br>- 55°C<br>  25°C<br>10 25<br>  25°C<br>100°C<br>100°C<br>8 150°C irr 20 150°C a<br>175°C 175°C<br>Lie fie<br>6 15<br>[Lf fe<br>4 O O 10 pee<br>2 5<br>Op<br>asma)| pA e<br>0 0<br>0 0.5 1 1.5 2 2.5 3 0 1 2 3 4 5<br>Forward Voltage, VF (V) Forward Voltage, VF (V)<br> (A)  (A)<br>F F<br>Forward Current, I Forward Current, I<br>**----- End of picture text -----**<br>


_**Figure 1 Typical forward characteristics**_ 

_**Figure 2 Typical forward characteristics in surge current**_ 

For more information go to www.unitedsic.com. 

Rev. A,  September  2018 

2 

Gen-III  |  6A - 650V SiC Schottky Diode  |  UJ3D06506TS **.** 

Datasheet **.** 

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1.E-1 0 4-4 100<br>- 55°C 90 FF<br>  25°C<br>80 Nee<br>1.E-1 0 5-5 125°C<br>70<br>175°C<br>60<br>1.E-1 0 6-6 Ty Le 50 INANE<br>er 40 TINE ET<br>AA FN<br>30<br>1.E-1 0 7-7 YA FN<br>20<br>10<br>1.E-1 0 8-8 sannley 40A 0 poweNN<br>SINOTES<br>200 250 300 350 400 450 500 550 600 650 25 50 75 100 125 150 175<br>Reverse Voltage, VR (V) TC (°C)<br>Figure 3 Typical reverse characteristics Figure 4 Power dissipation<br>80<br>D = 0.1<br>70 D = 0.3 1<br>Co r ae<br>D = 0.5<br>60<br>D = 0.7<br>D = 1.0<br>50<br>D = 0.5<br>40<br>ms ff<br>D = 0.3<br>0.1<br>30 D = 0.1<br>D = 0.05<br>pitt<br>20<br>ON f D = 0.02<br>10 PSS Single Pulse<br>ttt<br>0 0.01<br>25 50 75 100 125 150 175 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01<br>TC (°C) Time , t (s)<br> (W)<br> (A)R Tot<br>Reverse Current, I Power Disspiation, P<br> (°C/W)<br> (A)F JC q<br>Forward Current, I Max. Thermal Impedance, Z<br>**----- End of picture text -----**<br>


_**Figure 5 Diode forward current**_ 

_**Figure 6 Maximum transient thermal impedance**_ 

For more information go to www.unitedsic.com. 

Rev. A,  September  2018 

3 

Gen-III  |  6A - 650V SiC Schottky Diode  |  UJ3D06506TS **.** 

Datasheet **.** 

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**----- Start of picture text -----**<br>
300 25<br>250<br>PT TT) CUE 20<br>200<br>PN 15 ee<br>150<br>PNT pp<br>10<br>No)<br>100<br>50 5 QC =  ׬0𝑉𝑅 𝐶 𝑉𝑑𝑉<br>NSSN] Zo<br>0 0<br>0.1 1 10 100 1000 0 100 200 300 400 500 600 700<br>Reverse Voltage, VR (V) Reverse Voltage, VR (V)<br>Figure 7 Capacitance vs. reverse voltage at  Figure 8 Typical capacitive charge vs. reverse<br>1MHz voltage<br>6<br>TTLEL LE<br>5<br>PEEL<br>4<br>PEELED<br>3<br>sn0000<br>2<br>1<br>sap 4500<br>=40mm<br>0<br>0 100 200 300 400 500 600 700<br>Reverse Voltage, VR (V)<br> (nC)<br>C<br>Q<br>Capacitance, C (pF)<br>J)<br>m<br> (<br>C<br>E<br>**----- End of picture text -----**<br>


_**Figure 9 Typical capacitance stored energy vs. reverse voltage**_ 

For more information go to www.unitedsic.com. 

Rev. A,  September  2018 

4 

Gen-III  |  6A - 650V SiC Schottky Diode  |  UJ3D06506TS **.** 

Datasheet **.** 

## **Disclaimer** 

United Silicon Carbide, Inc. reserves the right to change or modify any of the products and their inherent physical and technical specifications without prior notice. United Silicon Carbide, Inc. assumes no responsibility or liability for any errors or inaccuracies within. 

Information on all products and contained herein is intended for description only. No license, express or implied, to any intellectual property rights is granted within this document. 

United Silicon Carbide, Inc. assumes no liability whatsoever relating to the choice, selection or use of the United Silicon Carbide, Inc. products and services described herein. 

For more information go to www.unitedsic.com. 

Rev. A,  September  2018 

5 



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- [Supplier page](https://es.farnell.com/unitedsic/uj3d06506ts/sic-schottky-diode-650v-6a-to/dp/4014274)
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