# TVS ARRAY, 40W, 3.3V, BI-DIRECTIONAL, SLP1006P2T
**URL**: https://novapart.co/products/UCLAMP3311T.TCT/tvs-array-40w-33v-bi-directional-slp1006p2t
**SKU**: UCLAMP3311T.TCT
**Manufacturer**: SEMTECH
**Category**: Circuit Protection || TVS - Transient Voltage Suppressors || TVS Diodes
**Price**: €0.2640
**Stock**: 1000+
**Lead Time**: 87 days (indicative)
## Description
Product Range:µClamp Series; TVS Polarity:Bidirectional; Reverse Standoff Voltage:3.3V; Clamping Voltage Max:8V; Diode Case Style:DFN1006; No. of Pins:2
## Specifications
| Parameter | Value |
|---|---|
| No. Of Pins | 2Pins |
| Qualification | - |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:3021448/)
uClamp3311T Low Profile μClamp[®] 1-Line ESD protection PRELIMINARY
## **PROTECTION PRODUCTS** -MicroClamp **[®]**
## Description
The μClamp[®] series of Transient Voltage Suppressors (TVS) are designed to replace multilayer varistors (MLVs) in portable applications such as cell phones, notebook computers, and PDAs. They offer superior electrical characteristics such as lower clamping voltage and no device degradation when compared to MLVs. They are designed to protect sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD), lightning, electrical fast transients (EFT), and cable discharge events (CDE).
The μClamp[®] 3311T is constructed using Semtech’s proprietary EPD process technology. The EPD process provides low standoff voltages with significant reductions in leakage currents and capacitance over siliconavalanche diode processes. They feature a true operating voltage of 3.3 volts for superior protection when compared to traditional pn junction devices.
The μClamp3311T is in a 2-pin SLP1006P2T package. It measures 1.0 x 0.6 x 0.4mm. The leads are spaced at a pitch of 0.65mm and are finished with lead-free NiPdAu. Each device will protect one line operating at 3.3 volts. It gives the designer the flexibility to protect single lines in applications where arrays are not practical. They may be used to meet the ESD immunity requirements of IEC 61000-4-2. The combination of small size and high ESD surge capability makes them ideal for use in portable applications such as cellular phones, digital cameras, and MP3 players.
**==> picture [265 x 233] intentionally omitted <==**
**----- Start of picture text -----**
Dimensions
1.0
0.60
0.65
0.40
Nominal Dimensions (mm)
**----- End of picture text -----**
## Features
- Transient protection for data lines to IEC 61000-4-2 (ESD) ±30kV (air), ±30kV (contact) IEC 61000-4-4 (EFT) 40A (tp = 5/50ns) Cable Discharge Event (CDE)
- Ultra-small package (1.0 x 0.6 x 0.4mm)
- Protects one data line
- Low reverse current: 10nA typical (VR=3.3V)
- Working voltage: 3.3V
- Low leakage current
- Solid-state silicon-avalanche technology
## Mechanical Characteristics
- SLP1006P2T package
- Pb-Free, Halogen Free, RoHS/WEEE Compliant
- Nominal Dimensions: 1.0 x 0.6 x 0.4 mm
- Lead Finish: NiPdAu
- Molding compound flammability rating: UL 94V-0
- Marking : Marking code
- Packaging : Tape and Reel
## Applications
- Cellular Handsets & Accessories
- Portable Instrumentation
- Keypads, Side Keys, LCD Displays
- Notebooks & Desktop Computers
- MP3 Players
## Schematic & Pin Configuration
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**----- Start of picture text -----**
2
1
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SLP1006P2T (Bottom View)
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www.semtech.com
Revision 8/8/2012
1
uClamp3311T
## PROTECTION PRODUCTS
PRELIMINARY
|PRELIMINARY
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## Notes
1)ESD gun return path connected to ESD ground plane.
- 2)Transmission Line Pulse Test (TLP) Settings: tp = 100ns, tr = 0.2ns, ITLP and VTLP averaging window: t1 = 70ns to t = 90ns. 2
- 3) Dynamic resistance calculated from Ipp = 4A to Ipp = 16A
www.semtech.com
© 2012 Semtech Corporation
2
uClamp3311T
## PROTECTION PRODUCTS
**==> picture [85 x 10] intentionally omitted <==**
**----- Start of picture text -----**
PRELIMINARY
**----- End of picture text -----**
## Typical Characteristics
## Non-Repetitive Peak Pulse Power vs. Pulse Time
**==> picture [264 x 176] intentionally omitted <==**
**----- Start of picture text -----**
1000
100
10
DR040412-40
1
0.1 1 10 100
Pulse Duration - tp (µs)
(W)
PP
Peak Pulse Power - P
**----- End of picture text -----**
## Normalized Capacitance vs. Reverse Voltage
## Clamping Voltage vs. Peak Pulse Current
**==> picture [263 x 178] intentionally omitted <==**
**----- Start of picture text -----**
10
9
8
7
6
5
4
3
Waveform
2 Parameters:
tr = 8μs
1
td = 20μs
0
0 1 2 3 4 5 6
Peak Pulse Current - IPP (A)
(V)
C
Clamping Voltage - V
**----- End of picture text -----**
## TLP Characteristic
**==> picture [534 x 398] intentionally omitted <==**
**----- Start of picture text -----**
25
1.6
Transmission Line Pulse Test
f = 1 MHz (TLP) Settings:
1.4 tp = 100ns, tr = 0.2ns,
20 I TLP and V TLP averaging window:
1.2 t1 = 70ns to t2 = 90ns
1 15
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10
0.6
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0 0.5 1 1.5 2 2.5 3 3.5
Reverse Voltage - VR (V)R (V) (V) TLP Voltage (V)
ESD Clamping (+8kV Contact per IEC 61000-4-2) ESD Clamping (-8kV Contact per IEC 61000-4-2)
50 0
45 Measured with 50 Ohm scope input -5
impedance, 2GHz bandwidth.
Corrected for 50 Ohm, 20dB
40 -10
attenuator. ESD gun return path
connected to ESD ground plane
35 -15
30 -20
25 -25
20 -30
15 -35 Measured with 50 Ohm scope input
impedance, 2GHz bandwidth.
10 -40 Corrected for 50 Ohm, 20dB
attenuator. ESD gun return path
5 -45 connected to ESD ground plane
0 -50
-10 0 10 20 30 40 50 60 70 80 -10 0 10 20 30 40 50 60 70 80
Time (ns) Time (ns)
TLP Current (A)
Voltage (V) Voltage (V)
**----- End of picture text -----**
**==> picture [266 x 172] intentionally omitted <==**
**----- Start of picture text -----**
1.6
f = 1 MHz
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0 0.5 1 1.5 2 2.5 3 3.5
Reverse Voltage - VR (V)R (V) (V)
Cj(VR) / Cj(VR=0V)
**----- End of picture text -----**
www.semtech.com
© 2012 Semtech Corporation
3
uClamp3311T
PRELIMINARY
PROTECTION PRODUCTS
## Typical Characteristics
## Typical Insertion Loss (S21)
**==> picture [245 x 193] intentionally omitted <==**
**----- Start of picture text -----**
CH1 S21 LOG 6 dB / REF 0 dB
1: -2.3215 dB
800 MHz
2: -2.5192 dB
0 dB 900 MHz
-6 dB 1 23 4 5 3: -3.0194 dB 981.928 MHz
-12 dB
4: -5.6822 dB
1.8 GHz
-18 dB
5: -12.905 dB
-24 dB 2.5 GHz
-30 dB
-36 dB
1 10 100 1 3
MHz MHz MHz GHz GHz
START. 030 MHz STOP 3000.000000 MHz
**----- End of picture text -----**
## Applications Information
## Device Connection Options
The μClamp3311T is designed to protect one data line operating up to 3.3 volts. It will present a high impedance to the protected line up to 3.3 volts. It will “turn on” when the line voltage exceeds 3.5 volts. The device is bidirectional and may be used on lines where the signal polarity is above and below ground. These devices are not recommended for use on dc power supply lines due to their snap-back voltage characteristic.
## Device Schematic & Pin Configuration
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2
1
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## Circuit Board Layout Recommendations for Suppression of ESD.
Good circuit board layout is critical for the suppression of ESD induced transients. The following guidelines are recommended:
- Place the TVS near the input terminals or connectors to restrict transient coupling.
- Minimize the path length between the TVS and the protected line.
- Minimize all conductive loops including power and ground loops.
- The ESD transient return path to ground should be kept as short as possible.
- Never run critical signals near board edges.
- Use ground planes whenever possible.
www.semtech.com
4
© 2012 Semtech Corporation
uClamp3311T
PRELIMINARY
## PROTECTION PRODUCTS
## Applications Information
## Semtech Low Voltage TVS
Conventional TVS diodes are silicon avalanche, p-n junction devices designed to operate at voltages as low as 5 volts. However, many of today's semiconductor devices operate at voltages below 5 volts, and thus require lower voltage protection devices. Unfortunately, for operating voltages below 5 volts, conventional TVS diode technology becomes impractical. This is due to the adverse effects of high leakage current and high capacitance caused by the high impurity concentrations that are needed to lower the device voltage below 5 volts. Semtech's proprietary low voltage EPD device technology was developed to provide protection for today's circuits operating at voltages below 5 volts. Unlike conventional TVS diodes, the EPD device utilizes a complex four layer (n-p-p-n) structure. The construction of these devices results in very low operating voltage without the adverse effects mentioned above.
## Device Operation
Since the EPD TVS devices use a 4-layer structure, they exhibit a slightly different IV characteristic curve when compared to conventional devices. Figure 1 compares the IV characteristic curves of a low voltage TVS with a working voltage (VRWM) of 3.3 volts to a conventional device with a working voltage of 5 volts. During normal operation, each device represents a high-impedance to the circuit up to its working voltage. During an ESD event, they will begin to conduct and will enter a low impedance state. For the 3.3 volt device, this happens when the punch-through voltage (VPT) is exceeded. Unlike a conventional 5 volt device, the low voltage TVS will exhibit a slight negative resistance characteristic as it conducts current. This characteristic aids in lowering the clamping voltage of the device. However, the device can latch up if a DC bias voltage is present. The reason being that in order for the device to turn off, the voltage must fall below the snap-back voltage (VSB). This value is normally a minimum of 2.8 volts. If the device is biased above the 2.8 volts, it will never fall below the snap-back voltage and will therefore stay in a conducting state.
**==> picture [528 x 245] intentionally omitted <==**
**----- Start of picture text -----**
0.05
Low Voltage TVS
� Working Voltage (VRWM): Maximum rated 0.04 VSB Semtech 5 Volt TVS
operating voltage at which the device will
appear as a high impedance to the
protected circuit.
0.03
� Punch-Through Voltage (VPT): Minimum Semtech 3.3 Volt TVS
rated voltage at which the device will
become a low impedance (i.e. Minimum 0.02
Turn-On Voltage). When VPT is exceeded,
the device will conduct.
� Snap-Back Voltage (VSB): Minimum rated 0.01 VPT
voltage when the device is in a conducting
state measured at ISB = 50mA. This
voltage is less than the working voltage. 0 0 1 2 3 4 5 6 7 8 9 10
The voltage must fall below VSB for the
device to turn off. -0.01 VRWM VRWM VBR
� Clamping Voltage (VC): Maximum voltage
drop across the device at a defined peak
pulse current (IPP). This is the voltage -0.02
seen by the protected circuit during a
transient event.
-0.03
Voltage - V (V)
Current - I (A)
**----- End of picture text -----**
Figure 1 - 3.3 volt vs. 5 volt TVS IV Curve
www.semtech.com
© 2012 Semtech Corporation
5
uClamp3311T
PRELIMINARY
## PROTECTION PRODUCTS
## Applications Information - Spice Model
uClamp3311T Spice Model
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www.semtech.com
© 2012 Semtech Corporation
6
uClamp3311T
PRELIMINARY
PROTECTION PRODUCTS
## Outline Drawing - SO-8Outline Drawing - SLP1006P2T
**==> picture [541 x 565] intentionally omitted <==**
**----- Start of picture text -----**
B
A D
DIMENSIONS
E INCHES MILLIMETER S
DIM
MIN NOMMAX MIN NOMMAX
A .015 .016 .017 0.37 0.40 0.43
A1 .000 .001 .002 0.00 0.03 0.05
TOP VIEW b .018 .020 .022 0.45 0.50 0.55
D .035 .039 .043 0.90 1.00 1.10
E .020 .024 .028 0.50 0.60 0.70
e .026 BSC 0.65 BSC
L .008 .010 .012 0.20 0.25 0.30
A SEATING R .002 .004 .006 0.05 0.10 0.15
aaa C PLANE N 2 2
aaa .003 0.08
A1 C bbb .004 0.10
PIN 1 ID
R
bxN
bbb C A B
2x L
e
BOTTOM VIEW
NOTES:
1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES).
Land Pattern - SLP1006P2T
DIMENSIONS
Y
DIM INCHES MILLIMETERS
(C) G Z C (.033) (0.85)
G .012 0.30
X .024 0.60
Y .022 0.55
Z .055 1.40
X
NOTES:
**----- End of picture text -----**
1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES).
2. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY. CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR COMPANY'S MANUFACTURING GUIDELINES ARE MET.
www.semtech.com
© 2012 Semtech Corporation
7
uClamp3311T
PRELIMINARY
## PROTECTION PRODUCTS
## Marking Codes
## Ordering Information
**==> picture [54 x 63] intentionally omitted <==**
## 31
## Notes:
1) Device is electrically symmetrical
- 2) Marking will also include line matrix date code
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MicroClamp, uClamp and μClamp are trademarks of Semtech Corporation
## Carrier Tape Specification
## 3,000 piece, 4mm Pitch Reel
**==> picture [110 x 22] intentionally omitted <==**
**----- Start of picture text -----**
31 31 31
**----- End of picture text -----**
Pin 1 Location (Towards Sprocket Holes)
Device Orientation in Tape
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www.semtech.com
© 2012 Semtech Corporation
8
uClamp3311T PRELIMINARY
## PROTECTION PRODUCTS
## 10,000 piece, 2mm Pitch Reel
**==> picture [441 x 67] intentionally omitted <==**
**----- Start of picture text -----**
Bo
Ko Ao
**----- End of picture text -----**
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**----- Start of picture text -----**
A0 B0 K0
0.70 +-/0.05 mm 11.5 +-/0.05 mm 0.55 +-/0.05 mm
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Note: All dimensions in mm unless otherwise specified
**==> picture [157 x 68] intentionally omitted <==**
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Pin 1 Location
(Towards Sprocket Holes)
31 31 31 31 31
**----- End of picture text -----**
Device Orientation in Tape
## Contact Information
Semtech Corporation Protection Products Division 200 Flynn Road, Camarillo, CA 93012 Phone: (805)498-2111 FAX (805)498-3804
www.semtech.com
© 2012 Semtech Corporation
9
## Links
- [View this product on Novapart](https://novapart.co/products/UCLAMP3311T.TCT/tvs-array-40w-33v-bi-directional-slp1006p2t)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/semtech/uclamp3311t-tct/tvs-array-40w-3-3v-bi-directional/dp/3021448)
---
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