# SCR THYRISTOR, 8A, 400V, TO-220AB

![Product image](https://novapart.co/image/farnell:1261477/)

**URL**: https://novapart.co/products/TYN412RG./scr-thyristor-8a-400v-to-220ab
**SKU**: TYN412RG.
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || Thyristors || Thyristors - SCRs
**Price**: €0.6260
**Stock**: 200+
**Lead Time**: 347 days (indicative)

## Description

Peak Repetitive Off State Voltage:400V; Gate Trigger Current Max:15mA; Average On State Current:8A; On State RMS Current:12A; Thyristor Case Style:TO-220AB; No. of P 89K1769

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (15-Jan-2018) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Thyristor Mounting | Through Hole |
| Holding Current Max | 30mA |
| On State Rms Current | 12A |
| Thyristor Case Style | TO-220AB |
| Average On State Current | 8A |
| Gate Trigger Current Max | 15mA |
| Gate Trigger Voltage Max | 1.5V |
| Operating Temperature Max | 125°C |
| Peak Non Repetitive Surge Current | 120A |
| Peak Repetitive Off State Voltage | 400V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1261477/)

## **TXN/TYN 0512 ---> TXN/TYN 1012** 

## SCR 

## **FEATURES** 

- . HIGH SURGE CAPABILITY 

- . HIGH ON-STATE CURRENT 

- . HIGH STABILITY AND RELIABILITY 

- . TXN Serie : INSULATED VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) 

## **DESCRIPTION** 

The TYN/TXN 0512 ---> TYN/TXN 1012 Family of Silicon Controlled Rectifiers uses a high performance glass passivated technology. 

This general purpose Family of Silicon Controlled Rectifiers is designed for power supplies up to 400Hz on resistive or inductive load. 

**TO220AB** (Plastic) 

**==> picture [24 x 17] intentionally omitted <==**

**----- Start of picture text -----**<br>
K  [A G]<br>**----- End of picture text -----**<br>


## **ABSOLUTE RATINGS** (limiting values) 

|**Symbol**||**Parameter**|**Parameter**|||||**Value**||**Unit**|
|---|---|---|---|---|---|---|---|---|---|---|
|IT(RMS)|RMS on-state current||||TXN|Tc=80°C||12||A|
||(180° conduction angle)||||TYN|Tc=90°C|||||
|IT(AV)|Average on-state current||||TXN|Tc=80°C||8||A|
||(180° conduction angle,single phase circuit)||||TYN|Tc=90°C|||||
|ITSM|Non repetitive surge peak on-state current|||||tp=8.3 ms||125||A|
||( Tj initial = 25°C )||||||||||
|||||||tp=10 ms||120|||
|I2t|I2t value|||||tp=10 ms||72||A2s|
|dI/dt|Critical rate of rise of on-state current|||||||100||A/µs|
||Gate supply : IG = 100 mA|diG/dt =|1|A/µs|||||||
|Tstg|Storage and operating junction temperature range||||||-|40 to +|150|°C|
|Tj|||||||-|40 to +|125|°C|
|Tl|Maximum lead temperature for soldering during 10 s|||||at<br>4.5 mm||260||°C|
||from case||||||||||
|**Symbol**|**Parameter**|||||**TYN/TXN**||||**Unit**|
||||**0512**||**112**|**212**<br>**412**|**612**|**812**|**1012**||
|VDRM|Repetitive peak off-state voltage|||50|100|200<br>400|600|800|1000|V|
|VRRM|Tj = 125°C||||||||||



1/5 

April 1995 

**TXN/TYN 0512 ---> TXN/TYN 1012** 

## **THERMAL RESISTANCES** 

|**Symbol**||**Parameter**||**Value**|**Unit**|
|---|---|---|---|---|---|
|Rth (j-a)|Junction to ambient|||60|°C/W|
|Rth (j-c) DC|Junction to case for DC||TXN|3.5|°C/W|
||||TYN|2.5||



## **GATE CHARACTERISTICS** (maximum values) 

PG (AV) = 1W PGM = 10W (tp = 20 µs) IFGM = 4A (tp = 20 µs) VRGM = 5 V. 

## **ELECTRICAL CHARACTERISTICS** 

|**Symbol**<br>**Test Conditions**<br>**Value**<br>**Unit**<br>IGT<br>VD=12V<br>(DC)<br>RL=33Ω<br>Tj=25°C<br>MAX<br>15<br>mA<br>VGT<br>VD=12V<br>(DC)<br>RL=33Ω<br>Tj=25°C<br>MAX<br>1.5<br>V<br>VGD<br>VD=VDRM RL=3.3kΩ<br>Tj= 125°C<br>MIN<br>0.2<br>V<br>tgt<br>VD=VDRM<br>IG = 40mA<br>dIG/dt = 0.5A/µs<br>Tj=25°C<br>TYP<br>2<br>µs<br>IL<br>IG= 1.2 IGT<br>Tj=25°C<br>TYP<br>50<br>mA<br>IH<br>IT= 100mA<br>gate open<br>Tj=25°C<br>MAX<br>30<br>mA<br>VTM<br>ITM= 24A<br>tp= 380µs<br>Tj=25°C<br>MAX<br>1.6<br>V<br>IDRM<br>IRRM<br>VDRM<br>Rated<br>VRRM<br>Rated<br>Tj=25°C<br>MAX<br>0.01<br>mA<br>Tj= 125°C<br>3<br>aes<br>a<br>es<br>ees es<br>a<br>es<br>es eees<br>a<br>a<br>es<br>eres esee<br>ae<br>e**s**Gee**s**<br>a<br>n<br>es ene<br>ao|
|---|
|dV/dt<br>Linear slope up to VD=67%VDRM<br>Tj= 125°C<br>MIN<br>200<br>V/µs|
|gate open|
|tq<br>VD=67%VDRM<br>ITM= 24A<br>VR= 25V<br>Tj= 125°C<br>TYP<br>70<br>µs|
|dITM/dt=30 A/µs<br>dVD/dt= 50V/µs|



2/5 —.$$] fy[$68] TROMSON 

**TXN/TYN 0512 ---> TXN/TYN 1012** 

**Fig.1 :** Maximum average power dissipation versus average on-state current (TXN). 

**Fig.3 :** Maximum average power dissipation versus average on-state current (TYN). 

**Fig.5 :** Average on-state current versus case temperature (TXN). 

**Fig.2 :** Correlation between maximum average power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact (TXN). 

**Fig.4 :** Correlation between maximum average power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact (TYN). 

**Fig.6 :** Average on-state current versus case temperature (TYN). 

3/5 

**TXN/TYN 0512 ---> TXN/TYN 1012** 

**Fig.7 :** Relative variation of thermal impedance versus pulse duration. 

**Fig.8 :** Relative variation of gate trigger current versus junction temperature. 

**==> picture [219 x 151] intentionally omitted <==**

**----- Start of picture text -----**<br>
Zth/Rth<br>1 EE oe<br>ee<br>AaA | a<br>A Coo| eeCoAee<br>Zth(j-c)<br>Ca Co<br>Padlll|ia a A<br>0.1 LMA TE<br>| Zth(j-a)<br>| ee ee 1<br>el<br>a || ee ee<br>|a a |<br>0<br>tp(s)<br>0.01 emPall LA IMT Ed<br>1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2<br>**----- End of picture text -----**<br>


**Fig.9 :** Non repetitive surge peak on-state current versus number of cycles. 

**Fig.10 :** Non repetitive surge peak on-state current for a sinusoidal pulse with width : t ≤ 10 ms, and corresponding value of I[2] t. 

**Fig.11 :** On-state characteristics (maximum values). 

4/5 

**TXN/TYN 0512 ---> TXN/TYN 1012** 

## **PACKAGE MECHANICAL DATA** 

TO220AB Plastic 

**==> picture [398 x 220] intentionally omitted <==**

**----- Start of picture text -----**<br>
REF. ee DIMENSIONS<br>Millimeters Inches<br>A | H ——es Min. Max. Min. Max.<br>G J A 10.00 10.40 0.393 0.409<br>B 15.20 15.90 0.598 0.625<br>= - a<br>I D C 13.00 14.00 0.511 0.551<br>B D 6.20 6.60 0.244 0.259<br>—— ee<br>F 3.50 4.20 0.137 0.165<br>| a G 2.65 2.95 0.104 0.116<br>F H 4.40 4.60 0.173 0.181<br>P |I O C L pfa I 3.75 3.85 0.147 0.151<br>J 1.23 1.32 0.048 0.051<br>il | M esa L 0.49 0.70 0.019 0.027<br>= N = :a M 2.40 2.72 0.094 0.107<br>a N 4.80 5.40 0.188 0.212<br>O 1.14 1.70 0.044 0.066<br>ne<br>a P 0.61 0.88 0.024 0.034<br>**----- End of picture text -----**<br>


Cooling method : by conduction (method C) Marking : type number Weight : 2.3 g Recommended torque value : 0.8 m.N. Maximum torque value : 1 m.N. 

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 

SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 

- 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES 

Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 

5/5 



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- [Supplier page](https://es.farnell.com/stmicroelectronics/tyn412rg/scr-thyristor-8a-400v-to-220ab/dp/1261477)
---

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