# Thyristor, 50 V, 25 mA, 5 A, 8 A, TO-220AB, 3 Pins

![Product image](https://novapart.co/image/farnell:2807122/)

**URL**: https://novapart.co/products/TYN058RG/thyristor-50-v-25-ma-5-a-8-to-220ab-3-pins
**SKU**: TYN058RG
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || Thyristors || Thyristors - SCRs
**Price**: €0.4340
**Stock**: 200+
**Lead Time**: 99 days (indicative)

## Description

Peak Repetitive Off-State Voltage, Vdrm:50V; Gate Trigger Current Max, Igt:25mA; Current It av:5A; On State RMS Current IT(rms):8A; Thyristor Case Style:TO-220AB; No. of Pins:3Pins; Pe

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | TYN058 |
| Thyristor Mounting | Through Hole |
| Holding Current Max | 45mA |
| On State Rms Current | 8A |
| Thyristor Case Style | TO-220AB |
| Average On State Current | 5A |
| Gate Trigger Current Max | 25mA |
| Gate Trigger Voltage Max | 1.5V |
| Operating Temperature Max | 125°C |
| Peak Non Repetitive Surge Current | 80A |
| Peak Repetitive Off State Voltage | 50V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2807122/)

SCR 

## a Gy SGS-THOMSON TXN/TYN 058 (G) ---> 7 Micaozuecrgommes = TXN/TYN 1008 (G) i 

## NN 

## FEATURES 

as HIGHHIGH SURGE ON-STATECAPABILITY CURRENT 

s HIGH STABILITY AND RELIABILITY 

- a TXN Serie : INSULATED VOLTAGE = 2500VRMs) (UL RECOGNIZED : E81734) 

TheDESCRIPTIONTYN/TXN 058 ---> TYN/TXN 1008 Family of Silicon Controlled Rectifiers uses a high performance glass passivated chips technology. This general purpose Family of Silicon Controlled Rectifiers is designed for power supplies up to 400Hz on resistive or inductive load. 

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|ABSOLUTERATINGS<br>[smo|RATINGS (limiting values)<br> [Paramet**e**r<br>Yat<br>nt||RATINGS (limiting values)<br> [Paramet**e**r<br>Yat<br>nt||
|---|---|---|
|IT(RMS)|RMS on-state current<br>TXN |Te=100°C<br>(180° conduction angle)<br>TYN | Te=105°C|A|
|IT(AV)|Average on-state current<br>TXN | Tc=100°C<br>(180° conduction angle,single phase circuit)<br>TYN | Tc=105°C|A|
|ITSM<br>Pm[eve|Non repetitivesurgepeakon-state current<br>fp-s3ms{ ae<br>A<br>(T)<br>initial<br>= 25°C)<br>oon<br>**|**<br>[eve<br>ftom<br>e||
|di/dt|Critical rate of rise of on-state current|A/us|
||Gate supply :Iq = 100 mA<br>dic/dt = 1 Aus||
|Tstg<br>Tj|Storage and operating junction temperature range<br>- 40 to + 150<br>- 40 to+ 125|°C<br>°C|
|TI|Maximum lead temperature for soklering during 10 s at 4.5 mm|°C|
||from case||
||[ose [ 103 |200 | «0s | cos | 06 |1008 |||
|VDRM|Repetitive peak off-state voltage<br>200<br>800|Vv|
|VRRM|Tj=125°C||



April 1995 

5 

Me 7929237 OO7bSb0 397 

TXN/TYN 058 (G) ---> TXN/TYN 1008 (G) 

THERMAL RESISTANCES es 0 Rth (j-c) DC |Junction to case for DC fom [35 °C ee 

## GATE CHARACTERISTICS (maximum values) 

Pg (AV) = 1WPGM = 10W (p= 20 ns) IFGM = 4A (Ip = 20 us) VAGM = 5 V. 

## ELECTRICAL CHARACTERISTICS 

|ELECTRICAL CHARACTERISTICS|ELECTRICAL CHARACTERISTICS||||||
|---|---|---|---|---|---|---|
|ome||||ae|||
|co Voomasa<br>Vp=VDRAM_<br>Iq=40mA||Sit|wefww|<br>Tj=25°C<br>TYP|| oe|«i||<br>ys|
|dig/dt = 0.5A/us|||||||
|Pu eta<br>Tw [irestoma ga|onn|eee |e|<br>Sid raw [wax | |<br>© | ma||||||
|loam |VORM Rated<br>IRRM<br>Varm Rated|||MAX|ar||ma|
|avidt<br>Linearslope up to|VD=67%VDRM||Tj= 110°C|||Vins|
|gate open|||||||
|Vp=67%VpRM|itmM=16A_|VpR= 25V|Tj= 110°C | TYP|70||Hs|
|ditwdt=30A/us|GVp/dt=|50V/us|||||



=r2/5 SGS-THOMSON S/ Marion enot 

MB 7929237 0076561 e233 

## TXN/TYN 058 (G) ---> TXN/TYN 1008 (G) 

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**----- Start of picture text -----**<br>
Po AT eK TG<br>TXN TS ee ee ee<br>(Insulated<br>Poo XX<br>a ee<br>a<br>TYN ET ee ee<br>(Uninsulated) Po too XK<br>Eeeeee ee ee<br>Seee ee ee<br>eees<br>Fig.1 : Maximum average power dissipation versus Fig.2 : Correlation between maximum average power<br>average on-state current (TXN). dissipation and maximum allowable temperatures (Tamb<br>and Tease) for different thermal resistances heatsink +<br>contact (TXN).<br>**----- End of picture text -----**<br>


Fig.1 : Maximum average power dissipation versus average on-state current (TXN). 

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P (W) P (Ww) Tease (°C)<br>8 8 7<br>(a Ta NINN et<br>ap LIAS a. 120" (|_| NAVY! 110<br>AG ASone [) ase TT [NNW]<br>A0 |1 |2 3 4|5 tau6 7 a0__tumeo20 40 60| 80| 100| 120N 140I<br>Fig.3 : Maximum average power dissipation versus Fig.4 : Correlation between maximum average power<br>average on-state current (TYN). dissipation and maximum allowable temperatures (Tamb<br>and Tease) for different thermal resistances heatsink +<br>contact (TYN).<br>P (Ww) P (W) Tease (°C)<br>10 360‘ 10 7 100<br>dA)Moa [tt] | | Rth = O°C/W<br>6 INNA<br>| Zane 6 ~ Xf 110<br>4<br>4 Re Save | | || NAAT<br>MS, Q- 120° 4 INS NY 115<br>Z, - 90° Cpe TORQ<br>0i ee ees<br>0 1 2 3 4 5 6 7 8 0i) 20 40 606 80 100 120- 140125<br>—_____________ S/ SGS-THomsonMi teroreeceon os —__________*©<br>**----- End of picture text -----**<br>


Fig.3 : Maximum average power dissipation versus average on-state current (TYN). 

mm 7929237? OO7bSbe 1LbT |_| 

TXN/TYN 058 (G) ---> TXN/TYN 1008 (G) 

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**----- Start of picture text -----**<br>
Fig.5 : Average on-state current versus case Fig.6 : Average on-state current versus case<br>temperature (TXN). temperature (TYN).<br>ITpavy(A) ITcavy(A)<br>10TOETTN;TTT TTT)\ 10SELLELEEdeeLEA|<br>aittNto-we | | | | | iNLLat4| fe-w |tT| tTtN<br>LETEET freeELT LE[TE N E, EE ET [dee] EN<br>% 10 20 30 40 50 60 70 80 90 100 110 120 130 % 40 20 30 40 50 60 70 80 90[|100 |110 120 130<br>**----- End of picture text -----**<br>


Fig.7 : Relative variation of thermal impedance versus pulse duration. 

Fig.6 : Relative variation of gate trigger current versus junction temperature. 

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1 Zth/Rtheee<br>eee eo oe til<br>CT er<br>iam | Pa Coonei<br>aPAU CU EVA<br>0.1aON al oss<br>ANCoCoaeet<br>ICAI TT TTT<br>LTTE<br>0.01 [Pall] UM |<br>1E-3 41E-2 1E-4 1E+0 1E+1 1E+2 SE+2<br>**----- End of picture text -----**<br>


Fig.9 : Non repetitive surge peak on-state current versus number of cycles. 

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dgtit)igthT}-25°C] INIT]Int T/-25°C]<br>25<br>.NEEN<br>bo masPT<br>PSSet SSEEerHTT | |<br>0.8 =<br>0Pee<br>-40-30-20-10 © 10 20 30 40 60 60 7O 80 80 100110<br>Fig.10 : Non repetitive surge peak on-state current for<br>a sinusoidal pulse with width : t < 10 ms, and<br>corresponding value of !4t.<br>**----- End of picture text -----**<br>


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lTsM (A) Itsm (A). 't (a*s)<br>100Tra Saat<br>80 ee ee<br>AU Ee ETT<br>| | --—————J on ee ee a<br>A SO<br>hie AAS AON SS SE SG<br>40 + ns Cs es ee<br>20 a en<br>10<br>0estthart Trt [00]  man esPLee ee ee<br>1 10 100 1000 1 2 s 10<br>WP4/5 faeSA SGS-THOMSON——_—_—_—___—___—___—_—_-iSO ESTAONICS<br>**----- End of picture text -----**<br>


WS 7929237 0076563 OTb 

TXN/TYN 058 (G) ---> TXN/TYN 1008 (G) 

## Fig.11 : On-state characteristics (maximum values). 

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| yyy fA)<br>00 —_—_—_—_——_—————————————<br>T)95°CInithal i a.DaeDPaee--— 2a», ee<br>A |f | |<br>10——_+---_——+TESif]saeff ——J+ — T] max¥Y—— |Tj——max|<br>——<br>rs jfee— ee VoRt 0.0460= os<br>a<br>1eee<br>is] 1 2 3 4 5<br>**----- End of picture text -----**<br>


## PACKAGE MECHANICAL DATA 

TO220AB Plastic 

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A . oS ie fs<br>G : 10.00 | 10.40 | 0.393 | 0.409 |<br>\ | [B_] | 15.20 | [15.90] | 0.598 |0.625<br>Beate 13.00 | [14.00] | 0.511 | 0.551 |<br>| | F | 3.50 | 4.20 | 0.137 | [0.165] |<br>F | H_ | 4.40 | 4.60 | 0.173 | [0.181] |<br>> intWal | 2 c : || IG || 2.653.75 || 2.953.85 || 0.1040.147 || [0.]  0. 1 16 [51] |<br>| | | | J | 1.23 | 1.32 | 0.048 | 0.051<br>I oy | L_ | 0.49 | 0.70 | 0.019 | 0.027<br>| M_ | 240 | 2.72 | 0.094 | 0.107<br>| N | 480 | 5.40 | 0.188 | 0.212<br>| O | 1.14 | 1.70 | 0.044 | 0.066<br>| P| 061 | 0.88 | 0.024 | 0.034 |<br>Cooling method : Recommended torque value :0.8 m.N.<br>Marking : type number Maximum torque value : 1 m.N.<br>Weight: 2.3 g<br>**----- End of picture text -----**<br>


Information furnished is believed to be accurate and reliable. However, SGS- THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microslectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 

© 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. 

SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong- Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 

55 

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—___————————————__ fa SGS-THOMSON —_______""<br>VE wickos serones<br>**----- End of picture text -----**<br>


MM 7929¢3? OO7bSbY T32 



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- [Supplier page](https://es.farnell.com/stmicroelectronics/tyn058rg/scr-thyristor-5a-50v-to-220ab/dp/2807122)
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