# Triac, 1.2 kV, 12 A, TO-220AB, 1.5 V, 120 A, 100 mA

![Product image](https://novapart.co/image/farnell:2807148/)

**URL**: https://novapart.co/products/TXDV1212RG/triac-12-kv-a-to-220ab-15-v-120-100-ma
**SKU**: TXDV1212RG
**Manufacturer**: STMICROELECTRONICS
**Price**: €1.5100
**Stock**: 1000+
**Lead Time**: 120 days (indicative)

## Description

Peak Repetitive Off-State Voltage, Vdrm:1.2kV; On State RMS Current IT(rms):12A; Triac Case Style:TO-220AB; Gate Trigger Current Max (QI), Igt:100mA; Gate Trigger Voltage Max Vgt:1.5V; Peak

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | TXDV1212 |
| Triac Case Style | TO-220AB |
| Thyristor Mounting | Through Hole |
| Holding Current Max | 100mA |
| On State Rms Current | 12A |
| Peak On State Voltage | 1.95V |
| Gate Trigger Voltage Max | 1.5V |
| Operating Temperature Max | 125°C |
| Peak Non Repetitive Surge Current | 120A |
| Peak Repetitive Off State Voltage | 1.2kV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2807148/)

**TXDVxx12** 

12 A high voltage Triacs 

**==> picture [61 x 39] intentionally omitted <==**

## **Features** 

- On-state current (IT(RMS)): 12 A 

- Max. blocking voltage (VDRM/VRRM): 1200 V 

- Gate current (IGT): 100 mA 

- Commutation @ 10 V/µs: up to 42.5 A/ms 

- Noise immunity: 2 kV/µs 

- Insulated package: 

   - 2,500 V rms (UL recognized: E81734). 

## **Description** 

The TXDVxx12 series uses a high performance alternistor technology. 

Featuring very high commutation levels and high surge current capability, these devices are well adapted to power control for inductive and resistive loads (motor, transformer...) especially on three-phase power grid. Targeted three-phase applications include heating systems, motor starters, and induction motor speed control (especially for fans). 

**==> picture [95 x 196] intentionally omitted <==**

**----- Start of picture text -----**<br>
A2<br>G<br>A1<br>A1<br>A2<br>G<br>TO-220AB<br>insulated<br>**----- End of picture text -----**<br>


## **Table 1. Device summary** 

|**Parameter**|**TXDV812RG**|**TXDV1212RG**|
|---|---|---|
|Blocking voltage VDRM/VRRM|800 V|1200 V|
|On-state current IT(RMS)|12 A||
|Gate current IGT|100 mA||



1/7 

January 2012 

Doc ID 18272 Rev 2 

_www.st.com_ 

**Characteristics** 

**TXDVxx12** 

## **1 Characteristics** 

## **Table 2. Absolute maximum ratings (limiting values)** 

|**Table 2.**|**Absolute maximum ratings (limiting values)**|**Absolute maximum ratings (limiting values)**|**Absolute maximum ratings (limiting values)**|||
|---|---|---|---|---|---|
|**Symbol**|**Parameter**|||**Value**|**Unit**|
|IT(RMS)|On-state rms current (180° conduction angle)||Tc= 90 °C|12|A|
|VDRM<br>VRRM|Repetitive peak off-state voltage|TXDV812|Tj= 125 °C|800|V|
|||TXDV1212||1200||
|ITSM|Non repetitive surge peak on-state current|tp= 2.5 ms|Tj= 25 °C|170|A|
|||tp= 8.3 ms||125||
|||tp= 10 ms||120||
|I2t|I2t value for fusing|tp= 10 ms||72|A2S|
|dI/dt|Critical rate of rise of on-state current<br>IG= 500 mA<br>dIG/dt = 1 A/µs|F = 50 Hz||100|A/µs|
|Tstg<br>Tj|Storage junction temperature range<br>Operating junction temperature range|||- 40 to + 150<br>- 40 to + 125|°C|
|VINS(RMS)<br>(1)|Insulation rms voltage|||2500|V|



1. A1, A2, gate terminals to case for 1 minute 

## **Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified)** 

|**Symbol**|**Test conditions**|**Test conditions**|**Quadrant**||**Value**|**Value**|**Unit**|
|---|---|---|---|---|---|---|---|
||||||**TXDV812**|**TXDV1212**||
|IGT|VD= 12 V DC, RL= 33Ω||I-II-III|MAX.|100||mA|
|VGT|||I-II-III|MAX.|1.5||V|
|VGD|VD= VDRMRL= 3.3 kΩ|Tj= 110 °C|I-II-III|MIN.|0.2||V|
|tgt|VD= VDRMIG= 500 mA dIG/dt = 3 A/µs||I-II-III|TYP.|2.5||µs|
|IL|IG= 1.2 x IGT||I-III|TYP.|100||mA|
||||II||200|||
|IH<br>(1)|IT= 500 mA    Gate open|||MAX.|100||mA|
|dV/dt(1)|Linear slope up to:<br>VD= 67% VDRMGate open|Tj= 125 °C||MIN.|2||kV/µs|
|(dI/dt)c(1)|(dV/dt)c = 10 V/µs|Tj= 110 °C||MIN.|42.5|30|A/ms|
|VTM (1)|ITM= 17 A    tp= 380 µs|||MAX.|1.95||V|
|Vto (1)|Threshold voltage|||MAX.|1.21||V|
|Rd (1)|Dynamic resistance|||MAX.|40||mΩ|
|IDRM<br>IRRM|VDRM= VRRM|Tj= 25 °C||MAX.|0.01||mA|
|||Tj= 110 °C|||2|5||



1. For either polarity of electrode A2 voltage with reference to electrode A1. 

2/7 

Doc ID 18272 Rev 2 

**Characteristics** 

**TXDVxx12** 

## **Table 4. Gate characteristics (maximum values)** 

|**Symbol**|**Parameter**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|---|
|PG(AV)<br>|Average gate power dissipation||1|W|
|PGM<br>|Peak gate power dissipation<br>t|p= 20 µs|10|W|
|IGM<br>|Peak gate current<br>t|p= 20 µs|4|A|
|VGM<br>|Peak positive gate voltage<br>t|p= 20 µs|16|V|



**Table 5. Thermal resistance** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rth(j-a)<br>|Junction to ambient|60|°C/W|
|Rth(j-c)DC<br>|Junction to case for DC|2.5|°C/W|
|Rth(j-c)AC<br>|Junction to case for 360 °Conduction angle (F = 50 Hz)|1.9|°C/W|



## **Figure 1. Max. rms power dissipation versus Figure 2. on-state rms current (F = 50Hz). (curves limited by (dI/dt)c)** 

**Max. rms power dissipation and max. allowable temperatures (Tamb and Tcase) for various Rth** 

**==> picture [462 x 146] intentionally omitted <==**

**----- Start of picture text -----**<br>
P(W) P(W) Tcase(° C)<br>20<br>18 20 Rth case to ambientRth = 0° C/W -90<br>18 1° C/W<br>16 α = 180° 16 2° C/W 4 °  C/W -95<br>14 α = 120° 14 -100<br>12<br>α = 90° 12<br>10 -105<br>10<br>8 α = 60° 8 -110<br>6<br>4 α = 30° 180 α ° 46 -115<br>2 IT(RMS)(A) α 2 Tamb(° C) -120<br>0 0 -125<br>0 1 2 3 4 5 6 7 8 9 10 11 12 0 20 40 60 80 100 120 140<br>**----- End of picture text -----**<br>


## **Figure 3. On-state rms current versus case Figure 4. temperature** 

## **Relative variation of thermal impedance versus pulse duration** 

**==> picture [462 x 147] intentionally omitted <==**

**----- Start of picture text -----**<br>
IT(RMS)(A) Zth/Rth<br>14 1<br>12<br>Zth(j-c)<br>10 α = 180°<br>8<br>0.1 Zth(j-a)<br>6<br>4<br>2<br>TC(°C) tp(s)<br>0 0.01<br>0 10 20 30 40 50 60 70 80 90 100 110 120 130 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2<br>**----- End of picture text -----**<br>


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Doc ID 18272 Rev 2 

**Characteristics** 

**TXDVxx12** 

## **Figure 5. Relative variation of gate trigger Figure 6. Non repetitive surge peak on-state current and holding current versus current versus number of cycles junction temperature** 

**==> picture [462 x 146] intentionally omitted <==**

**----- Start of picture text -----**<br>
IGT[T ]j . IH[T ]j ITSM(A)<br>IGT[T =25°C]j IH[T =25°C]j 120<br>2.5<br>100 t = 20 ms<br>2.0 One cycle<br>80<br>1.5<br>IH IGT 60 Tj initial=25°C<br>1.0<br>40<br>0.5<br>20<br>T (°C)j Number of cycles<br>0.0 0<br>-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 0 10 100 1000<br>**----- End of picture text -----**<br>


## **Figure 7. Non-repetitive surge peak on-state Figure 8. On-state characteristics (maximum current for a sinusoidal pulse and values) corresponding values of I[2] t** 

**==> picture [462 x 147] intentionally omitted <==**

**----- Start of picture text -----**<br>
ITSM(A), I t (A s)2 2 1000 ITM(A)<br>Tj initial = 25°C Tj max.:<br>Vt0=1.21V<br>R =0.040t Ω<br>ITSM<br>100<br>100 Tj initial = 25° C<br>I t2<br>10 Tj max.<br>tp(ms) VTM(V)<br>10 1<br>1 2 5 10 1 2 3 4 5 6<br>**----- End of picture text -----**<br>


## **Figure 9. Safe turn-off operating area** 

**==> picture [171 x 127] intentionally omitted <==**

**----- Start of picture text -----**<br>
(dV/dt)c(V/µs)<br>1000<br>Tj = 110° C<br>100<br>10<br>(dI/dt)c(A/ms)<br>1<br>1 10 100<br>**----- End of picture text -----**<br>


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Doc ID 18272 Rev 2 

**Package information** 

**TXDVxx12** 

## **2 Package information** 

- Epoxy meets UL94,V0 

- Cooling method: C (by conduction) 

- Recommended torque value: 0.4 to 0.6 N·m 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK[®] is an ST trademark. 

**Table 6. TO-220AB insulated dimensions** 

|**I**|||||**C**<br>**b2**<br>**c2**<br>**F**<br>**L**<br>**A**<br>**a1**<br>**a2**<br>**b1**<br>**c1**<br>**M**|**Ref.**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
||||||||**Millimeters**|||**Inches**|||
||||||||**Min.**|**Typ.**|**Max.**|**Min.**|**Typ.**|**Max.**|
|||||||A|15.20||15.90|0.598||0.625|
|||||||a1||3.75|||0.147||
|||||**B**||a2|13.00||14.00|0.511||0.551|
||||**Ø**|**I**|||||||||
|||||||B|10.00||10.40|0.393||0.409|
|||||||b1|0.61||0.88|0.024||0.034|
||**4**|**l3**|||||||||||
|||||||b2|1.23||1.32|0.048||0.051|
||||||||||||||
|||||||C<br>|4.40<br>||4.60<br>|0.173<br>||0.181<br>|
||||**e**|||c1|0.49||0.70|0.019||0.027|
||**l2**|||||c2|2.40||2.72|0.094||0.107|
|||||||e|2.40||2.70|0.094||0.106|
|||||||F|6.20||6.60|0.244||0.259|
|||||||ØI|3.75||3.85|0.147||0.151|
|||||||I4|15.80|16.40|16.80|0.622|0.646|0.661|
|||||||L|2.65||2.95|0.104||0.116|
|||||||l2|1.14||1.70|0.044||0.066|
|||||||l3|1.14||1.70|0.044||0.066|
|||||||M||2.60|||0.102||



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**Ordering information** 

**TXDVxx12** 

## **3 Ordering information** 

## **Table 7. Ordering information** 

|**Order code**|**Marking**|**Package**|**Weight**|**Base qty**|**Delivery mode**|
|---|---|---|---|---|---|
|TXDV812RG|TXDV812|TO-220AB<br>insulated|2.3 g|50|Tube|
|TXDV1212RG|TXDV1212|||||



## **4 Revision history** 

**Table 8. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|30-Mar-2011|1|Initial release.|
|13-Jan-2012|2|Updated dI/dt in_Table 2_, and added Vtoand Rdin_Table 3_|



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**TXDVxx12** 

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7/7 

Doc ID 18272 Rev 2 



## Links

- [View this product on Novapart](https://novapart.co/products/TXDV1212RG/triac-12-kv-a-to-220ab-15-v-120-100-ma)
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- [Supplier page](https://es.farnell.com/stmicroelectronics/txdv1212rg/triac-12a-1-2kv-to-220ab-3/dp/2807148)
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