# Dual MOSFET, P Channel, 30 V, 30 V, 2.5 A, 2.5 A

![Product image](https://novapart.co/image/farnell:2706712RL/)

**URL**: https://novapart.co/products/TT8J2TR/dual-mosfet-p-channel-30-v-25-a
**SKU**: TT8J2TR
**Manufacturer**: ROHM
**Category**: Semiconductors - Discretes || FETs || Dual MOSFETs
**Price**: €0.2910
**Stock**: 10+

## Description

Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-2.5A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.06ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (23-Jan-2024) |
| No. Of Pins | 8Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Transistor Case Style | TSST |
| Operating Temperature Max | 150°C |
| Power Dissipation N Channel | 1.25W |
| Power Dissipation P Channel | 1.25W |
| Drain Source Voltage Vds N Channel | 30V |
| Drain Source Voltage Vds P Channel | 30V |
| Continuous Drain Current Id N Channel | 2.5A |
| Continuous Drain Current Id P Channel | 2.5A |
| Drain Source On State Resistance N Channel | - |
| Drain Source On State Resistance P Channel | 0.084ohm |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2706712RL/)

Datasheet 

## TT8J2 

## -30V Pch + Pch Middle Power MOSFET 

## **l Outline** 

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**----- Start of picture text -----**<br>
|||
|---|---|
|VDSS|-30V|
|RDS(on)(Max.)|84mΩ|
|ID|±2.5A|
|PD|1.25W|

**----- End of picture text -----**<br>


TSST8 

## **l Features** 

## **l Inner circuit** 

- 1) Low on - resistance. 

- 2) High power package. 

- 3) Low voltage drive(4V). 

4) Built-in G-S Protection Diode. 

- 5) Pb-free lead plating ; RoHS compliant 

## **l Packaging specifications** 

## **l Application** 

Switching 

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|||
|---|---|
|Embossed|
|Packing|
|Tape|
|Reel size (mm)|180|
|Tape width (mm)|8|
|Type|
|Basic ordering unit (pcs)|3000|
|Taping code|TR|
|Marking|J02|

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**l Absolute maximum ratings** (Ta = 25°C)  <It is the same ratings for the Tr1 and Tr2> 

**==> picture [493 x 199] intentionally omitted <==**

**----- Start of picture text -----**<br>
|||||
|---|---|---|---|
|Parameter|Symbol|Value|Unit|
|Drain - Source voltage|VDSS|-30|V|
|Continuous drain current|ID|±2.5|A|
|Pulsed drain current|I|±10|A|
|D,pulse|[*1]|
|Gate - Source voltage|VGSS|±20|V|
|total|1.25|
|PD|[*2]|
|Power dissipation|element|1.0|W|
|total|PD|[*3]|0.6|
|Junction temperature|Tj|150|℃|
|Range of storage temperature|Tstg|-55 to +150|℃|

**----- End of picture text -----**<br>


www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 

**20150730 - Rev.001** 

1/11 

**TT8J2** 

Datasheet 

## **l Thermal resistance** 

|**lThermal resistance**|||||||
|---|---|---|---|---|---|---|
|||||Values|||
|Parameter||Symbol|Min.|Typ.|Max.|Unit|
|Thermal resistance, junction - ambient|total<br>element|RthJA*2|-<br>-|-<br>-|100<br>125|℃/W|
||total|RthJA*3|-|-|208||



## **l Electrical characteristics (Ta = 25°C)** <It is the same characteristics for the Tr1 and Tr2> 

|**lElectrical characteristics (Ta = 25°C)(Ta = 25°C)Ta = 25°C)**|**Electrical characteristics (Ta = 25°C)(Ta = 25°C)Ta = 25°C)a = 25°C) = 25°C))  **<It is the same characteristics for the Tr1 and Tr2>|<It is the same characteristics for the Tr1 and Tr2>|<It is the same characteristics for the Tr1 and Tr2>|<It is the same characteristics for the Tr1 and Tr2>|<It is the same characteristics for the Tr1 and Tr2>||
|---|---|---|---|---|---|---|
|Parameter|Symbol|Conditions|Values|||Unit|
||||Min.|Typ.|Max.||
|Drain - Source breakdown<br>voltage|V(BR)DSS|VGS= 0V, ID= -1mA|-30|-|-|V|
|Breakdown voltage<br>temperature coefficient|ΔV(BR)DSS <br>ΔTj<br>|ID= -1mA<br> referenced to 25℃|-|-24.1|-|mV/℃|
|Zero gate voltage<br>drain current|IDSS|VDS= -30V, VGS= 0V|-|-|-1|μA|
|Gate - Source<br>leakage current|IGSS|VDS= 0V, VGS= ±20V|-|-|±10|μA|
|Gate threshold<br>voltage|VGS(th)|VDS= -10V, ID= -1mA|-1.0|-|-2.5|V|
|Gate threshold voltage<br>temperature coefficient|ΔVGS(th) <br>ΔTj<br>|ID= -1mA<br> referenced to 25℃|-|3.3|-|mV/℃|
|Static drain - source<br>on - state resistance|RDS(on)*4|VGS= -10V, ID= -2.5A|-|60|84|mΩ|
|||VGS= -4.5V, ID= -1.2A|-|95|130||
|||VGS= -4V, ID= -1.2A|-|115|160||
|Forward Transfer<br>Admittance||Yfs|*4|VDS= -10V, ID= -2.5A|1.8|-|-|S|



www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 

**20150730 - Rev.001** 

2/11 

**TT8J2** 

Datasheet 

## **l Electrical characteristics** (Ta = 25°C) <It is the same characteristics for the Tr1 and Tr2> 

|Parameter|Symbol|Conditions|Values|Values|Values|Unit|
|---|---|---|---|---|---|---|
||||Min.|Typ.|Max.||
|Input capacitance|Ciss|VGS= 0V<br>VDS= -10V<br>f = 1MHz|-|460|-|pF|
|Output capacitance|Coss||-|65|-||
|Reverse transfer capacitance|Crss||-|40|-||
|Turn - on delay time|td(on)*4|VDD ⋍-15V,VGS= -10V<br>ID= -1.2A<br>RL= 12.5Ω<br>RG= 10Ω|-|7|-|ns|
|Rise time|tr*4||-|20|-||
|Turn - off delay time|td(off)*4||-|35|-||
|Fall time|tf*4||-|14|-||



## **l Gate charge characteristics** (Ta = 25°C) <It is the same characteristics for the Tr1 and Tr2> 

|Parameter|Symbol|Conditions|Values|Values|Values|Unit|
|---|---|---|---|---|---|---|
||||Min.|Typ.|Max.||
|Total gate charge|Qg*4|VDD ⋍-15V<br>ID= -2.5A<br>VGS= -5V|-|4.8|-|nC|
|Gate - Source charge|Qgs*4||-|1.8|-||
|Gate - Drain charge|Qgd*4||-|1.2|-||



## **l Body diode electrical characteristics** (Source-Drain) (Ta = 25°C) 

## <It is the same characteristics for the Tr1 and Tr2> 

|Parameter|Symbol|Conditions|Values|Values|Values|Unit|
|---|---|---|---|---|---|---|
||||Min.|Typ.|Max.||
|Body diode continuous<br>forward current|IS|Ta= 25℃|-|-|-0.8|A|
|Body diode<br>pulse current|ISP*1||-|-|-10||
|Forward voltage|VSD*4|VGS= 0V, IS= -2.5A|-|-|-1.2|V|



*1 Pw≦10μs , Duty cycle≦1% 

- *2 Mounted on a ceramic board (30×30×0.8mm) 

*3 Mounted on a FR4 (20×20×0.8mm) 

*4 Pulsed 

www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 

**20150730 - Rev.001** 

3/11 

**TT8J2** 

Datasheet 

## **l Electrical characteristic curves** 

Fig.1 Power Dissipation Derating Curve 

Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width 

## Fig.2 Maximum Safe Operating Area 

Fig.4 Single Pulse Maximum Power dissipation 

www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 

**20150730 - Rev.001** 

4/11 

**TT8J2** 

Datasheet 

## **l Electrical characteristic curves** 

## Fig.5 Typical Output Characteristics(I) Fig.6 Typical Output Characteristics(II) 

Fig.7 Breakdown Voltage vs. Fig.8 Typical Transfer Characteristics Junction Temperature 

www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 

**20150730 - Rev.001** 

5/11 

**TT8J2** 

Datasheet 

## **l Electrical characteristic curves** 

Fig.9 Gate Threshold Voltage vs. Junction Temperature 

Fig.11 Drain Current Derating Curve 

Fig.10 Forward Transfer Admittance vs. Drain Current 

Fig.12 Static Drain - Source On - State Resistance vs. Gate Source Voltage 

www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 

**20150730 - Rev.001** 

6/11 

**TT8J2** 

Datasheet 

## **l Electrical characteristic curves** 

Fig.13 Static Drain - Source On - State Resistance vs. Junction Temperature 

Fig.14 Static Drain - Source On - State Resistance vs. Drain Current (I) 

www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 

**20150730 - Rev.001** 

7/11 

**TT8J2** 

Datasheet 

## **l Electrical characteristic curves** 

Fig.15 Static Drain - Source On - State Resistance vs. Drain Current (II) 

Fig.16 Static Drain - Source On - State Resistance vs. Drain Current (IlI) 

Fig.17 Static Drain - Source On - State Resistance vs. Drain Current (IV) 

www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 

**20150730 - Rev.001** 

8/11 

**TT8J2** 

Datasheet 

## **l Electrical characteristic curves** 

Fig.18 Typical Capacitance vs. Drain - Source Voltage 

Fig.20 Dynamic Input Characteristics 

Fig.19 Switching Characteristics 

Fig.21 Source Current vs. Source Drain Voltage 

www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 

**20150730 - Rev.001** 

9/11 

**TT8J2** 

Datasheet 

## **l Measurement circuits** <It is the same for the Tr1 and Tr2> 

Fig. 1-1 SWITCHING TIME MEASUREMENT CIRCUIT Fig. 1-2 SWITCHING WAVEFORMS 

Fig. 2-1 GATE CHARGE MEASUREMENT CIRCUIT Fig. 2-2 GATE CHARGE WAVEFORM 

## **l Notice** 

This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. 

www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 

**20150730 - Rev.001** 

10/11 

**TT8J2** 

Datasheet 

## **l Dimensions** 

www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 

**20150730 - Rev.001** 

11/11 

Notice 

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Notes<br>1) The information contained herein is subject to change without notice.<br>2) Before you use our Products, please contact our sales representative and verify the latest specifica-<br>tions:<br>3) Although ROHM is continuously working to improve product reliability and quality, semicon-<br>ductors can break down and malfunction due to various factors.<br>Therefore, in order to prevent personal injury or fire arising from failure, please take safety<br>measures such as complying with the derating characteristics, implementing redundant and<br>fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no<br>responsibility for any damages arising out of the use of our Poducts beyond the rating specified by<br>ROHM.<br>4) Examples of application circuits, circuit constants and any other information contained herein are<br>provided only to illustrate the standard usage and operations of the Products. The peripheral<br>conditions must be taken into account when designing circuits for mass production.<br>5) The technical information specified herein is intended only to show the typical functions of and<br>examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,<br>any license to use or exercise intellectual property or other rights held by ROHM or any other<br>parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of<br>such technical information.<br>6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communi-<br>cation, consumer systems, gaming/entertainment sets) as well as the applications indicated in<br>this document.<br>7) The Products specified in this document are not designed to be radiation tolerant.<br>8) For use of our Products in applications requiring a high degree of reliability (as exemplified<br>below), please contact and consult with a ROHM representative : transportation equipment (i.e.<br>cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety<br>equipment, medical systems, servers, solar cells, and power transmission systems.<br>9) Do not use our Products in applications requiring extremely high reliability, such as aerospace<br>equipment, nuclear power control systems, and submarine repeaters.<br>10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with<br>the recommended usage conditions and specifications contained herein.<br>11) ROHM has used reasonable care to ensur the accuracy of the information contained in this<br>document. However, ROHM does not warrants that such information is error-free, and ROHM<br>shall have no responsibility for any damages arising from any inaccuracy or misprint of such<br>information.<br>12) Please use the Products in accordance with any applicable environmental laws and regulations,<br>such as the RoHS Directive. For more details, including ROHS compatibility, please contact a<br>ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting<br>non-compliance with any applicable laws or regulations.<br>13) When providing our Products and technologies contained in this document to other countries,<br>you must abide by the procedures and provisions stipulated in all applicable export laws and<br>regulations, including without limitation the US Export Administration Regulations and the Foreign<br>Exchange and Foreign Trade Act.<br>14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of<br>ROHM.<br>**----- End of picture text -----**<br>


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