TSSE3H45H

% SEMICONDUCTOR **TSSE3H45 - TSSE3H60** 

Taiwan Semiconductor 

## **3A, 45V - 60V Trench Schottky Rectifier** 

## FEATURES 

- Patented Trench Schottky technology 

- Excellent high temperature stability 

- Low forward voltage 

- Lower power loss/ high efficiency 

- High forward surge capability 

- Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC 

- Halogen-free according to IEC 61249-2-21 

|KEY PARAMETERS|KEY PARAMETERS|KEY PARAMETERS|
|---|---|---|
|PARAMETER|VALUE|UNIT|
|IF(AV)|3|A|
|VRRM|45 - 60|V|
|IFSM|60|A|
|TJ MAX|150|°C|
|Package|SOD-123HE||
|Configuration|Single die||



## APPLICATIONS 

- Trench Schottky barrier rectifier is designed for high frequency miniature switched mode power supplies such as adapters, lighting and on-board DC/DC converters 

## MECHANICAL DATA 

- Case: SOD-123HE 

- Molding compound meets  UL 94V-0 flammability rating 

- Part no. with suffix "H" means AEC-Q101 qualified 

- Packing code with suffix "G" means green compound (halogen-free) 

- Moisture sensitivity level: level 1, per J-STD-020 

- Terminal: Matte tin plated leads, solderable per J-STD-002 

- Meet JESD 201 class 2 whisker test 

## **SOD-123HE** 

- Polarity: As marked 

- Weight: 0.022g (approximately) 

|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|
|---|---|---|---|---|
|PARAMETER|SYMBOL|TSSE3H45|TSSE3H60|UNIT|
|Marking code on the device||E3H45|E3H60||
|Maximum repetitive peak reverse voltage|VRRM|45|60|V|
|Maximum RMS voltage|VRMS|32|42|V|
|Forward current|IF(AV)|3||A|
|Surge peak forward current, 8.3 ms single half<br>sine-wave superimposed on ratedload perdiode|IFSM|60||A|
|Junction temperature|TJ|-55 to +150||°C|
|Storage temperature|TSTG|-55 to +150||°C|



1 Version:C1812 

## **TSSE3H45 - TSSE3H60** Taiwan Semiconductor $5 Ee$$ 

## THERMAL PERFORMANCE 

|THERMAL PERFORMANCE||||
|---|---|---|---|
|PARAMETER|SYMBOL|TYP|UNIT|
|Junction-to-lead thermal resistance per diode|RӨJL|20|°C/W|



|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)|
|---|---|---|---|---|---|---|
|PARAMETER||CONDITIONS|SYMBOL|TYP|MAX|UNIT|
|Forward voltage per diode(1)|TSSE3H45|IF= 3A, TJ= 25°C|VF|0.47|0.57|V|
|||IF= 3A, TJ=125°C||0.40|0.50|V|
||TSSE3H60|IF= 3A, TJ= 25°C||0.50|0.60|V|
|||IF= 3A, TJ=125°C||0.43|0.53|V|
|Reverse current @ rated VRper diode(2)||TJ= 25°C|IR|-|100|μA|
|||TJ= 125°C||-|25|mA|



## **Notes:** 

1. Pulse test with PW=0.3 ms 

2. Pulse test with PW=30 ms 

## ORDERING INFORMATION 

|ORDERING INFORMATION|ORDERING INFORMATION|ORDERING INFORMATION|ORDERING INFORMATION|ORDERING INFORMATION|ORDERING INFORMATION|
|---|---|---|---|---|---|
|PART NO.|PART NO.<br>SUFFIX|PACKING<br>CODE|PACKING CODE<br>SUFFIX|PACKAGE|PACKING|
|TSSE3Hxx<br>(Note 1, 2)|H|RV|G|SOD-123HE|3,000 / 7" Reel|
|||RQ||SOD-123HE|10,000 / 13" Reel|



## **Notes:** 

1. "x" defines voltage from 45V (TSSE3H45) to 60V (TSSE3H60) 

2. Whole series with green compound (halogen-free) 

## EXAMPLE P/N 

|EXAMPLE P/N|EXAMPLE P/N|EXAMPLE P/N|EXAMPLE P/N|EXAMPLE P/N|EXAMPLE P/N|
|---|---|---|---|---|---|
|EXAMPLE P/N|PART NO.|PART NO.<br>SUFFIX|PACKING<br>CODE|PACKING CODE<br>SUFFIX|DESCRIPTION|
|TSSE3H45HRVG|TSSE3H45|H|RV|G|AEC-Q101 qualified<br>Greencompound|



2 Version:C1812 

**TSSE3H45 - TSSE3H60** 

## Taiwan Semiconductor 

## CHARACTERISTICS CURVES 

(TA = 25°C unless otherwise noted) 

## **Fig.1 Forward Current Derating Curve** 

## **Fig.2 Typical Junction Capacitance** 

**==> picture [502 x 202] intentionally omitted <==**

**----- Start of picture text -----**<br>
4 1000<br>3<br>2 100<br>1<br>Heat sink<br>5mm x 5mm f=1.0MHz<br>Cu pad test board Vslg=50mVp-p<br>0 10<br>25 50 75 100 125 150 0.1 1 10 100<br>LEAD TEMPERATURE ( [o] C)  FORWARD VOLTAGE (V)<br>CAPACITANCE (pF)<br>AVERAGE FORWARD CURRENT (A)<br>**----- End of picture text -----**<br>


**Fig.3 Typical Reverse Characteristics** 

**Fig.4 Typical Forward Characteristics** 

**==> picture [524 x 201] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>TSSE3H45  TSSE3H45<br>10 TJ=150 [o] C 10<br>Se eee S L<br>1 TJ=125 [o] C<br>1<br>0.1 TJ=100 [o] C<br>= G F<br>0.01 TJ=150 [o] C<br>0.1<br>TJ=125 [o] C<br>0.001 TJ=100 [o] C<br>TJ=25 [o] C TJ=25 [o] C<br>0.0001 = 0.01 CULO<br>10 20 30 40 50 60 70 80 90 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8<br>PERCENT OF RATED PEAK REVERSE VOLTAGE (%)   FORWARD VOLTAGE (V)<br>INSTANTANEOUS REVERSE CURRENT (mA)  INSTANTANEOUS FORWARD CURRENT (A)<br>**----- End of picture text -----**<br>


3 Version:C1812 

**TSSE3H45 - TSSE3H60** Taiwan Semiconductor ee$a 

## CHARACTERISTICS CURVES 

(TA = 25°C unless otherwise noted) 

## **Fig.5 Typical Reverse Characteristics** 

## **Fig.6 Typical Forward Characteristics** 

**==> picture [519 x 203] intentionally omitted <==**

**----- Start of picture text -----**<br>
100 100<br>TSSE3H60  TSSE3H60<br>10 SS TJ=150 [o] C<br>10<br>TJ=125 [o] C<br>1<br>pen ens ae? 1 A<br>0.1 TJ=100 [o] C<br>a fl l TJ=150 [o] C<br>0.1 TJ=125 [o] C<br>0.01<br>Eueeliuns ff TJ=100 [o] C<br>TJ=25 [o] C<br>TJ=25 [o] C<br>0.001 ef 0.01 fe<br>10 20 30 40 50 60 70 80 90 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8<br>PERCENT OF RATED PEAK REVERSE VOLTAGE (%)   FORWARD VOLTAGE (V)<br>INSTANTANEOUS REVERSE CURRENT (mA)  INSTANTANEOUS FORWARD CURRENT (A)<br>**----- End of picture text -----**<br>


4 Version:C1812 

**TSSE3H45 - TSSE3H60** EEE om GMWVDDWORR ———— 

Taiwan Semiconductor 

## PACKAGE OUTLINE DIMENSIONS 

**SOD-123HE** 

|<br>|<br>i<br>—<br>Lp<br>}<br>E<br>oa<br>i<br>Fo<br>H<br>6<br>|<br>BURR <br>as ee|SIDE|.<br>ap<br>VENA<br>Detail Z enlarged|**DIM.**<br>**Unit (mm)**<br>**Unit (inch)**<br>**Min**<br>**Max**<br>**Min**<br>**Max**<br>A<br>1.65<br>1.95<br>0.065<br>0.077<br>B<br>2.60<br>3.00<br>0.102<br>0.118<br>C<br>0.85<br>1.15<br>0.033<br>0.045<br>D<br>0.75<br>0.85<br>0.030<br>0.033<br>E<br>0.10<br>0.20<br>0.004<br>0.008<br>F<br>0.55<br>0.75<br>0.022<br>0.030<br>G<br>0.35<br>0.55<br>0.014<br>0.022<br>H<br>1.90<br>2.30<br>0.075<br>0.091<br>I<br>1.35<br>1.55<br>0.053<br>0.061<br>J<br>0.95<br>1.25<br>0.037<br>0.049<br>K<br>3.50<br>3.90<br>0.138<br>0.154<br>L<br>0.35<br>0.55<br>0.014<br>0.022<br>~~EE~~<br>~~es es~~<br>~~es~~<br>~~a a~~<br>~~es~~<br>~~ee~~<br>~~es ee~~<br>~~es~~<br>~~es~~<br>0°0.02 ~~ee ee~~<br>~~ee ee ee~~<br>~~es es~~<br>~~**e**s es~~<br>~~e~~<br>~~ee ee ee~~<br>~~eses~~|
|---|---|---|---|



## SUGGESTED PAD LAYOUT 

|**Symbol**|**Unit (mm)**|**Unit (inch)**|
|---|---|---|
|A|1.40|0.055|
|B|2.40|0.094|
|C|0.70|0.028|
|D|0.90|0.035|
|E|1.40|0.055|



## MARKING DIAGRAM 

P/N = Marking Code YW = Date Code F = Factory Code 

5 Version:C1812 

## **TSSE3H45 - TSSE3H60** TAIWANSEMICONDUCTOR(i Taiwan Semiconductor 

## **Notice** 

Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. 

Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. 

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 

6 Version:C1812