TQM150NB04DCR RLG

**TQM150NB04DCR** 

Taiwan Semiconductor 

## **AUTOMOTIVE Dual N-Channel 40V 175°C MOSFET** 

## FEATURES 

- AEC-Q101 Rev-D Qualified 

- 100% UIS and Rg tested 

- 175°C Operating Junction Temperature 

- RoHS Compliant 

- Halogen-free according to IEC 61249-2-21 

|PRODUCT SUMMARY|PRODUCT SUMMARY|PRODUCT SUMMARY|PRODUCT SUMMARY|
|---|---|---|---|
|PARAMETER||VALUE|UNIT|
|VDS||40|V|
|RDS(on)(max)|VGS= 10V|15|mΩ|
||VGS= 7V|28.6||
|Qg||18|nC|



## APPLICATIONS 

- Power Switch for 12V Automotive Systems 

- Solenoid and Motor Control 

- Automotive Transmission Control 

- DC-DC Converters 

## **PDFN56U Dual** 

**Note:** MSL 1 (Moisture Sensitivity Level) per J-STD-020 

|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|
|---|---|---|---|---|
|PARAMETER||SYMBOL|LIMIT|UNIT|
|Drain-Source Voltage||VDS|40|V|
|Gate-Source Voltage||VGS|±20|V|
|Continuous Drain Current**(Note 1)**|TC= 25°C|ID|39|A|
||TA= 25°C||9||
|Pulsed Drain Current||IDM|156|A|
|Single Pulse Avalanche Current **(Note 2)**||IAS|15|A|
|Single Pulse Avalanche Energy **(Note 2)**||EAS|34|mJ|
|Total Power Dissipation|TC= 25°C|PD|48|W|
||TC= 125°C||16||
|Total Power Dissipation|TA= 25°C|PD|2.4|W|
||TA= 125°C||0.8||
|OperatingJunction and Storage Temperature Range||TJ, TSTG|- 55 to +175|°C|



|THERMAL RESISTANCE|THERMAL RESISTANCE|THERMAL RESISTANCE|THERMAL RESISTANCE|
|---|---|---|---|
|PARAMETER|SYMBOL|MAXIMUM|UNIT|
|Thermal Resistance – Junction to Case|RӨJC|3.1|°C/W|
|Thermal Resistance – Junction to Ambient|RӨJA|61|°C/W|



**Thermal Performance Note:** RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The casethermal reference is defined at the solder mounting surface of the drain pins. RӨJC is guaranteed by design while RӨCA is determined by the user’s board design. The RӨJA limit presented here is based on mounting on a 1 in[2] pad of 2 oz copper. 

1 Version: A1912 

g SEMICONDUCTOR[lpg **TQM150NB04DCR** Taiwan Semiconductor 

|ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise noted)<br>~~a~~|ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise noted)<br>~~a~~|ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise noted)<br>~~a~~|ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise noted)<br>~~a~~|ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise noted)<br>~~a~~|ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise noted)<br>~~a~~|ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise noted)<br>~~a~~|
|---|---|---|---|---|---|---|
|PARAMETER<br>~~ee~~|CONDITIONS<br>~~ee~~|SYMBOL<br>~~ee~~|MIN.<br>~~ee~~|TYP.<br>~~ee~~|MAX.<br>~~ee~~|UNIT<br>~~ee~~|
|**Static**<br>~~|~~|||||||
|Drain-Source Breakdown Voltage<br>~~a~~|VGS= 0V, ID= 250µA<br>~~a~~|BVDSS<br>~~a~~|40<br>~~a~~|--<br>~~a~~|--<br>~~a~~|V<br>~~a~~|
|Gate Threshold Voltage<br>~~ee~~|VGS= VDS, ID= 250µA<br>~~ee~~|VGS(TH)<br>~~ee~~|1.8<br>~~ee~~|2.8<br>~~ee~~|4<br>~~ee~~|V<br>~~ee~~|
|Gate-Source Leakage Current<br>~~ee~~<br>~~eee~~|VGS= ±20V, VDS= 0V<br>~~ee~~<br>~~eee~~|IGSS<br>~~ee~~<br>~~eee~~|--<br>~~ee~~<br>~~eee~~|--<br>~~ee~~<br>~~eee~~|±100<br>~~ee~~<br>~~eee~~|nA<br>~~ee~~<br>~~eee~~|
|Drain-Source Leakage Current<br>~~eee~~|VGS= 0V, VDS= 40V<br>~~eee~~|IDSS<br>~~eee~~|--<br>~~eee~~|--<br>~~eee~~|1<br>~~eee~~|µA<br>~~eee~~|
||VGS= 0V, VDS= 40V<br>TJ = 125°C<br>~~eee~~||--<br>~~eee~~|--<br>~~eee~~|100<br>~~eee~~||
||VGS= 0V, VDS= 40V<br>TJ = 175°C<br>~~eee~~||--<br>~~eee~~|--<br>~~eee~~|500<br>~~eee~~||
|Drain-Source On-State Resistance <br>**(Note 3)**<br>~~eee~~|VGS= 10V, ID= 9A<br>~~eee~~|RDS(on)<br>~~eee~~|--<br>~~eee~~|10.3<br>~~eee~~|15<br>~~eee~~|mΩ<br>~~eee~~|
||VGS= 10V, ID= 9A<br>TJ= 125°C||--|17.5|25.5||
||VGS= 10V, ID= 9A<br>TJ= 175°C||--|21.6|31.5||
||VGS= 7V, ID= 6A<br>~~|~~||--<br>~~|~~|11.6<br>~~|~~|28.6<br>~~|~~||
|Forward Transconductance**(Note 3)**<br>~~ee~~|VDS= 10V, ID= 9A<br>~~|~~<br>~~ee~~|gfs<br>~~ee~~|--<br>~~|~~<br>~~ee~~|38<br>~~|~~<br>~~ee~~|--<br>~~|~~<br>~~ee~~|S<br>~~ee~~|
|**Dynamic (Note 4)**<br>~~ee~~<br>~~a~~|||||||
|Total Gate Charge<br>~~a~~<br>~~oo~~<br>~~oo~~|VGS= 10V, VDS= 20V,<br>ID= 9A<br>~~a~~|Qg<br>~~a~~<br>~~ee~~|--<br>~~a~~<br>~~ee~~<br>~~ee~~|18<br>~~a~~<br>~~ee~~<br>~~ee~~|--<br>~~a~~<br>~~ee~~<br>~~ee~~|nC<br>~~a~~<br>~~ee~~<br>~~ee~~|
|Total Gate Charge<br>~~oo~~<br>~~oo~~<br>~~oo~~|VGS= 7V, VDS= 20V,<br>ID= 6A|Qg<br>~~ee~~|--<br>~~ee~~<br>~~ee~~<br>~~ee~~|13<br>~~ee~~<br>~~ee~~<br>~~ee~~|--<br>~~ee~~<br>~~ee~~<br>~~ee~~||
|Gate-Source Charge<br>~~oo~~<br>~~oo~~<br>~~oo~~<br>~~oo~~||Qgs<br>~~ee~~<br>~~ee~~|--<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|6<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|--<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~||
|Gate-Drain Charge<br>~~oo~~<br>~~oo~~<br>~~oo~~<br>~~oo~~||Qgd<br>~~ee~~|--<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|4<br> ~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|--<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~||
|Input Capacitance<br>~~oo~~<br>~~oo~~<br>~~oo~~<br>~~oo~~|VGS= 0V, VDS= 20V,<br>f = 1.0MHz|Ciss<br>~~ee~~|--<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~**ee**~~|1135<br> ~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~e~~~~**e**~~|--<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~**ee**~~|pF<br>~~ee~~<br>~~ee~~<br>~~**ee**~~|
|Output Capacitance<br>~~oo~~<br>~~oo~~<br>~~oo~~||Coss<br>~~ee~~|--<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~**ee**~~|112<br> ~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~e~~~~**e**~~<br>~~ee~~|--<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>~~**ee**~~||
|Reverse Transfer Capacitance<br>~~oo~~<br>~~oo~~||Crss<br>~~ee~~|--<br>~~ee ~~<br>~~**ee**~~<br>~~ee~~|52<br> ~~ee ~~<br>~~e~~~~**e**~~<br>~~ee~~<br>~~ee~~|--<br> ~~ee~~<br>~~**ee**~~<br>~~ee~~||
|Gate Resistance<br>~~oo~~<br>~~ee~~|f = 1.0MHz<br>~~ee~~|Rg<br>~~ee~~|0.8<br>~~**ee** ~~<br>~~ee~~|2.5<br> ~~e~~~~**e** ~~<br>~~ee~~<br>~~ee~~|5<br> ~~**ee**~~<br>~~ee~~|Ω<br>~~**ee**~~<br>~~ee~~|
|**Switching (Note 4)**<br>~~a~~<br>~~e~~~~**e**eeeee~~<br>~~a~~|||||||
|Turn-On Delay Time<br>~~a~~<br>~~a~~<br>~~oo~~|VGS= 10V, VDS= 20V,<br>ID= 9A, RG= 2Ω<br>~~a~~|td(on)<br>~~a~~<br>~~ee~~<br>|--<br>~~a~~<br>~~ee~~<br>~~e~~~~**e**~~<br>~~ee~~|7<br>~~a~~<br>~~ee~~<br>~~eee~~<br>~~ee~~|--<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|ns<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|
|Rise Time<br>~~a~~<br>~~oo~~<br>~~oo~~||tr<br>~~e~~|--<br>~~e~~~~**e** ~~<br>~~eee~~<br>~~e~~~~**e**~~|8<br> ~~eee ~~<br>~~ee~~<br>~~ee~~|--<br> ~~ee~~<br>~~ee~~||
|Turn-Off Delay Time<br>~~oo~~<br>~~oo~~||td(off)<br><br>~~ee~~|--<br>~~ee~~<br>~~ee~~<br>~~e~~~~**e**~~<br>~~e~~|13<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|--<br>~~ee~~<br>~~ee~~<br>~~ee~~||
|Fall Time<br>~~oo~~<br>~~oo~~||tf<br><br>~~ee~~|--<br>~~ee ~~<br>~~e~~~~**e**~~<br>~~ee~~<br>~~e~~|4<br> ~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|--<br> ~~ee~~<br>~~ee~~<br>~~ee~~||
|**Source-Drain Diode **<br>~~e~~~~**e** ee~~<br>~~oo~~<br>~~e~~<br>~~ee ee~~<br>~~a~~<br>~~es~~<br>~~se~~|||||||
|Diode Forward Voltage **(Note3)**<br>~~es~~<br>~~SS~~|VGS = 0V,IS = 9A<br>~~se~~|VSD<br>~~se~~<br>~~ee~~|--<br>~~se~~<br>~~ee~~|--<br>~~ee~~|1.2<br>~~ee~~|V<br>~~ee~~|
|Reverse Recovery Time<br>~~es~~<br>~~SS~~<br>~~oo~~|IS= 9A,<br>di/dt = 100A/μs<br>~~se~~|trr<br>~~se~~<br>~~ee~~<br>~~ee~~|--<br>~~se~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|14<br>~~ee~~<br>~~ee~~<br>~~es~~|--<br>~~ee~~<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~|
|Reverse Recovery Charge<br>~~SS~~<br>~~oo~~||Qrr<br>~~ee~~<br>~~ee~~|--<br>~~ee~~<br>~~ee~~<br>~~ee~~|7<br>~~ee~~<br>~~ee~~<br>~~es~~|--<br>~~ee~~<br>~~ee~~<br>~~ee~~|nC<br>~~ee~~<br>~~ee~~|



1. Silicon limited current only. 

2. L = 0.3mH, VGS = 10V, VDD = 25V, RG = 50Ω, IAS = 15A, Starting TJ = 25°C 

3. Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%. 

4. Switching time is essentially independent of operating temperature. 

2 Version: A1912 

**TQM150NB04DCR** TAIWANSEMICONDUCTOR(i Taiwan Semiconductor 

## ORDERING INFORMATION 

|ORDERING CODE|PACKAGE|PACKING|
|---|---|---|
|TQM150NB04DCR RLG|PDFN56U Dual|2,500pcs / 13” Reel|



3 Version: A1912 

5$$ **TQM150NB04DCR** Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) 

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**----- Start of picture text -----**<br>
        Output Characteristics         Transfer Characteristics<br>40 40<br>VGS=10V<br>VGS=7V<br>VGS=6V<br>30 VGS=5.5V  30<br>VGS=5V<br>PA<br>20 [Zse2 20 FAYe<br>25 ℃<br>VGS=4.5V<br>-55 ℃<br>10 10<br>y ea| | LL<br>175 ℃<br>0 y)| | |) 0 LL YA<br>0 1 2 3 4 0 1 2 3 4 5<br>VDS, Drain to Source Voltage (V)  VGS, Gate to Source Voltage (V)<br>            On-Resistance vs. Drain Current          Gate-Source Voltage  vs. Gate Charge<br>0.018 10<br>0.016 VDS=20V<br>8 ID=9A<br>0.014<br>VGS=7V  6<br>0.012<br>0.01<br> VGS=10V  4<br>0.008<br>2<br>0.006<br>0.004 0<br>0 10 20 30 40 0 5 10 15 20<br>ID, Drain Current (A)  Qg, Gate Charge (nC)<br>On-Resistance vs. Junction Temperature     On-Resistance vs. Gate-Source Voltage<br>2.5 0.04<br>2 VIDGS=9A =10V  0.035<br>0.03<br>1.5<br>PAE) 0.025 Te,<br>=P<br>0.02<br>1<br>iiiberiiL) © EEE<br>0.015<br>0.5 ID=9A<br>eT LL LLL 0.01 PN L L.<br>0 PTELELEEL EE) 0 0.005  ERT<br>-75 -50 -25 0 25 50 75 100 125 150 175 4 5 6 7 8 9 10<br>TJ, Junction Temperature (°C)  VGS, Gate to Source Voltage (V)<br>, Drain Current (A)  , Drain Current (A)<br>ID ID<br>)<br>, Drain-Source On-Resistance (Ω , Gate to Source Voltage (V)<br>GS<br>V<br>DS(ON)<br>R<br>(Normalized)<br>, Drain-Source On-Resistance<br>DS(on) , Drain-Source On-Resistance (Ω)<br>R DS(on)<br>R<br>**----- End of picture text -----**<br>


4 Version: A1912 

**TQM150NB04DCR** RR EEE——E Taiwan Semiconductor 

% SGMVDWOORR 

## CHARACTERISTICS CURVES 

(TA = 25°C unless otherwise noted) 

## **Capacitance vs. Drain-Source Voltage** 

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**----- Start of picture text -----**<br>
1600<br>1400<br>1200 Nf<br>CISS<br>1000800 ee ee ee<br>600400 , |ff<br>200 eee<br>COSS<br>CRSS<br>0 _S——— eee<br>0 10 20 30 40<br>VDS, Drain to Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


## **BVDSS vs. Junction Temperature** 

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**----- Start of picture text -----**<br>
1.2<br>ID=2mA<br>1.1<br>1<br>0.9<br>0.8<br>-75 -50 -25 0 25 50 75 100 125 150<br>TJ, Junction Temperature (°C)<br> (Normalized)<br>DSS<br>BV<br>Drain-Source Breakdown Voltage<br>**----- End of picture text -----**<br>


## **Maximum Safe Operating Area, Junction-to-Case** 

## **Source-Drain Diode Forward Current vs. Voltage** 

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**----- Start of picture text -----**<br>
1000 100<br>a ee ee ee 4 2 6<br>R<br>DS(ON)<br>100 10<br>ES tt — —<br>A ENR Mall A 175 ℃ 25 ℃ ee -55 ℃<br>10 1<br>oN =<br>SINGLE PULSE<br>°<br>RӨJC=3.1 C/W  SS eet ee ee<br>TC=25 ° C<br>1 eSETT EON BallHTT 0.1 pH}iff tfeeeft<br>0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2<br>VDS, Drain to Source Voltage (V)   VSD, Body Diode Forward Voltage (V)<br>Normalized Thermal Transient Impedance, Junction-to-Case<br>10<br>SINGLE PULSE<br>se ee ee Oe ee ne GOGO RӨJC=3.1 ° C/W | [[|]<br>1<br>ee<br>ee a Duty=0.5  eee<br>Duty=0.2<br>0.1 = ee ee Duty=0.1  Y | i {ty = |<br>eli Duty=0.05  Lt af I<br>Duty=0.02  Notes:<br>ee ee ee ee ee ee Duty=0.01  Y | i {ty Duty = t1 / t2 |<br>0.01 FT ET TT Single  LLL TJ = TC + PDM x ZӨJC x RӨJC i<br>0.0001 0.001 0.01 0.1<br>t, Square Wave Pulse Duration (sec)<br>, Drain Current (A)<br>ID<br>, Reverse Drain Current (A)<br>IS<br>ӨJC<br>Thermal Impedance, Z<br>Normalized Effective Transient<br>**----- End of picture text -----**<br>


5 Version: A1912 

**TQM150NB04DCR** TAIWANSEMICONDUCTOR[pgp Taiwan Semiconductor 

## PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) 

**PDFN56U Dual** 

## SUGGESTED PAD LAYOUT (Unit: Millimeters) 

## MARKING DIAGRAM 

TSC 150NB04D YWWLF 

**Y** = Year Code **WW** = Week Code (01~52) **L** = Lot Code (1~9,A~Z) **F** = Factory Code 

= AEC-Q101 Qualified 

**_** 

6 Version: A1912 

**TQM150NB04DCR** TAIWANSEMICONDUCTOR(i Taiwan Semiconductor 

## Notice 

Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. 

Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. 

Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. 

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 

7 Version: A1912