# Power MOSFET, DMOS, P Channel, 350 V, 85 mA, 30 ohm, TO-236AB, Surface Mount

![Product image](https://novapart.co/image/farnell:2920690RL/)

**URL**: https://novapart.co/products/TP5335K1-G/power-mosfet-dmos-p-channel-350-v-85-ma-30-ohm-to
**SKU**: TP5335K1-G
**Manufacturer**: MICROCHIP
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3230
**Stock**: 10+
**Lead Time**: 43 days (indicative)

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:-85mA; Drain Source Voltage Vds:-350V; On Resistance Rds(on):30ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (04-Feb-2026) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 360mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-236AB |
| Drain Source Voltage Vds | 350V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 85mA |
| Drain Source On State Resistance | 30ohm |
| Gate Source Threshold Voltage Max | 2.4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2920690RL/)

## **TP5335** 

## **P-Channel Enhancement-Mode Vertical DMOS FET** 

## **Features** 

- High Input Impedance and High Gain 

- Low Power Drive Requirement 

- Ease of Paralleling 

- Low CISS and Fast Switching Speeds 

- Excellent Thermal Stability 

- Integral Source-Drain Diode 

- Free from Secondary Breakdown 

## **Applications** 

- Logic-Level Interfaces (Ideal for TTL and CMOS) 

- Solid-State Relays 

- Analog Switches 

- Power Management 

## **General Description** 

The TP5335 is a low-threshold, Enhancement-mode (normally-off) transistor that utilizes an advanced vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. 

Microchip’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. 

- Telecommunication Switches 

## **Package Type** 

**==> picture [114 x 115] intentionally omitted <==**

**----- Start of picture text -----**<br>
3-lead SOT-23<br>(Top view)<br>DRAIN<br>SOURCE<br>GATE<br>**----- End of picture text -----**<br>


See Table 2-1 for pin information. 

DS20005704C-page 1 

 2018-2020 Microchip Technology Inc. 

**TP5335** 

## **1.0 ELECTRICAL CHARACTERISTICS** 

## **Absolute Maximum Ratings†** 

Drain-to-Source Voltage....................................................................................................................................... BVDSS Drain-to-Gate Voltage .......................................................................................................................................... BVDGS Gate-to-Source Voltage..........................................................................................................................................  ±20V Junction Temperature, TJ .................................................................................................................... –55°C to +150°C Storage Temperature, TS...................................................................................................................... –55°C to +150°C 

**† Notice:** Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. 

## **DC ELECTRICAL CHARACTERISTICS – COMMERCIAL** 

**Electrical Specifications:** TA = TJ = 25°C unless otherwise specified. All DC parameters are 100% tested at 25°C unless otherwise stated. (Pulse test: 300 µs pulse, 2% duty cycle.) 

|**DC ELECTRICAL CHARACTERISTICS – COMMERCIAL**|**DC ELECTRICAL CHARACTERISTICS – COMMERCIAL**|**DC ELECTRICAL CHARACTERISTICS – COMMERCIAL**|**DC ELECTRICAL CHARACTERISTICS – COMMERCIAL**|**DC ELECTRICAL CHARACTERISTICS – COMMERCIAL**|**DC ELECTRICAL CHARACTERISTICS – COMMERCIAL**|**DC ELECTRICAL CHARACTERISTICS – COMMERCIAL**|
|---|---|---|---|---|---|---|
|**Electrical Specifications:**TA= TJ= 25°C unless otherwise specified. All DC parameters are 100% tested at 25°C<br>unless otherwise stated. (Pulse test: 300 µs pulse, 2% duty cycle.)|||||||
|**Parameter**|**Sym.**|**Min.**|**Typ.**|**Max.**|**Unit**|**Conditions**|
|Drain-to-Source Breakdown<br>Voltage|BVDSS|–350|—|—|V|VGS= 0V, ID= –100 µA|
|Gate Threshold Voltage|VGS(th)|–1|—|–2.4|V|VDS= VGS, ID= –1 mA|
|Change in VGS(th)<br>with Temperature|ΔVGS(th)|—|—|4.5|mV/°C|VDS= VGS, ID= –1 mA (**Note 1**)|
|Gate Body Leakage|IGSS|—|—|–100|nA|VGS= ±20V, VDS= 0V|
|Zero-Gate Voltage Drain Current|IDSS|—|—|–10|µA|VDS= Maximum rating,<br>VGS= 0V|
|||—|—|–1|mA|VDS= Maximum rating,<br>VGS= 0V, TA= 125°C (**Note 1**)|
|On-State Drain Current|ID(ON)|–200|—|—|mA|VGS= –4.5V, VDS= –25V|
|||–400|—|—|mA|VGS= –10V, VDS= –25V|
|Static Drain-to-Source On-State<br>Resistance|RDS(ON)|—|—|75|Ω|VGS= –4.5V, ID= –150 mA|
|||—|—|30|Ω|VGS= –10V, ID= –200 mA|
|Change in RDS(ON)with<br>Temperature|ΔRDS(ON)|—|—|1.7|%/°C|VGS= –10V, ID= –200 mA<br>(**Note 1**)|



**Note 1:** Specification is obtained by characterization and is not 100% tested. 

## **DC ELECTRICAL CHARACTERISTICS – AUTOMOTIVE** 

**Electrical Specifications:** TA = TJ = (–55°C, 25°C, or 150°C) unless otherwise specified. All DC parameters are 100% tested at all three temperatures unless otherwise stated. (Pulse test: 300 µs pulse, 2% duty cycle.) 

|**DC ELECTRICAL CHARACTERISTICS – AUTOMOTIVE**|**DC ELECTRICAL CHARACTERISTICS – AUTOMOTIVE**|**DC ELECTRICAL CHARACTERISTICS – AUTOMOTIVE**|**DC ELECTRICAL CHARACTERISTICS – AUTOMOTIVE**|**DC ELECTRICAL CHARACTERISTICS – AUTOMOTIVE**|**DC ELECTRICAL CHARACTERISTICS – AUTOMOTIVE**|**DC ELECTRICAL CHARACTERISTICS – AUTOMOTIVE**|
|---|---|---|---|---|---|---|
|**Electrical Specifications:**TA= TJ= (–55°C, 25°C, or 150°C) unless otherwise specified. All DC parameters are<br>100% tested at all three temperatures unless otherwise stated. (Pulse test: 300 µs pulse, 2% duty cycle.)|||||||
|**Parameter**|**Sym.**|**Min.**|**Typ.**|**Max.**|**Unit**|**Conditions**|
|Drain-to-Source Breakdown<br>Voltage|BVDSS|**–350**|—|—|V|VGS= 0V, ID= –100 µA|
|Gate Threshold Voltage|VGS(th)|–1|—|**–2.4**|V|VDS= VGS, ID= –1 mA|
|Change in VGS(th)<br>with Temperature|ΔVGS(th)|—|3.3|—|mV/°C|VDS= VGS, ID= –1 mA (**Note 1**)|
|Gate Body Leakage|IGSS|—|—|–100|nA|VGS= ±20V, VDS= 0V|
|||—|—|**–220**|nA|VGS= ±20V, VDS= 0V,<br>TA= 150°C|



**Note 1:** Specification is obtained by characterization and is not 100% tested. 

DS20005704C-page 2 

 2018-2020 Microchip Technology Inc. 

**TP5335** 

## **DC ELECTRICAL CHARACTERISTICS – AUTOMOTIVE (CONTINUED)** 

**Electrical Specifications:** TA = TJ = (–55°C, 25°C, or 150°C) unless otherwise specified. All DC parameters are 100% tested at all three temperatures unless otherwise stated. (Pulse test: 300 µs pulse, 2% duty cycle.) 

|**DC ELECTRICAL CHARACTERISTICS – AUTOMOTIVE (CONTINUED)**|**DC ELECTRICAL CHARACTERISTICS – AUTOMOTIVE (CONTINUED)**|**DC ELECTRICAL CHARACTERISTICS – AUTOMOTIVE (CONTINUED)**|**DC ELECTRICAL CHARACTERISTICS – AUTOMOTIVE (CONTINUED)**|**DC ELECTRICAL CHARACTERISTICS – AUTOMOTIVE (CONTINUED)**|**DC ELECTRICAL CHARACTERISTICS – AUTOMOTIVE (CONTINUED)**|**DC ELECTRICAL CHARACTERISTICS – AUTOMOTIVE (CONTINUED)**|
|---|---|---|---|---|---|---|
|**Electrical Specifications:**TA= TJ= (–55°C, 25°C, or 150°C) unless otherwise specified. All DC parameters are<br>100% tested at all three temperatures unless otherwise stated. (Pulse test: 300 µs pulse, 2% duty cycle.)|||||||
|**Parameter**|**Sym.**|**Min.**|**Typ.**|**Max.**|**Unit**|**Conditions**|
|Zero-Gate Voltage Drain Current|IDSS|—|—|**–10**|µA|VDS= Maximum rating,<br>VGS= 0V|
|||—|—|**–1**|mA|VDS= Maximum rating,<br>VGS= 0V, TA= 150°C|
|On-State Drain Current|ID(ON)|**–200**|—|—|mA|VGS= –4.5V, VDS= –25V|
|||–400|—|—|mA|VGS= –10V, VDS= –25V|
|||**–375**|—|—|mA|VGS= –10V, VDS= –25V,<br>TA= 150°C|
|Static Drain-to-Source On-State<br>Resistance|RDS(ON)|—|—|**75**|Ω|VGS= –4.5V, ID= –150 mA|
|||—|—|30|Ω|VGS= –10V, ID= –200 mA|
|||—|—|**70**|Ω|VGS= –10V, ID= –200 mA,<br>TA= 150°C|
|Change in RDS(ON)with<br>Temperature|ΔRDS(ON)|—|1|—|%/°C|VGS= –10V, ID= –200 mA<br>(**Note 1**)|



**Note 1:** Specification is obtained by characterization and is not 100% tested. 

## **AC ELECTRICAL CHARACTERISTICS – COMMERCIAL** 

**Electrical Specifications:** TA = TJ = 25°C unless otherwise specified. Specification is obtained by characterization and is not 100% tested. 

|**AC ELECTRICAL CHARACTERISTICS – COMMERCIAL**|**AC ELECTRICAL CHARACTERISTICS – COMMERCIAL**|**AC ELECTRICAL CHARACTERISTICS – COMMERCIAL**|**AC ELECTRICAL CHARACTERISTICS – COMMERCIAL**|**AC ELECTRICAL CHARACTERISTICS – COMMERCIAL**|**AC ELECTRICAL CHARACTERISTICS – COMMERCIAL**|**AC ELECTRICAL CHARACTERISTICS – COMMERCIAL**|
|---|---|---|---|---|---|---|
|**Electrical Specifications:**TA= TJ= 25°C unless otherwise specified. Specification is obtained by characterization<br>and is not 100% tested.|||||||
|**Parameter**|**Sym.**|**Min.**|**Typ.**|**Max.**|**Unit**|**Conditions**|
|Forward Transconductance|GFS|125|—|—|mmho|VDS= –25V, ID= –200 mA|
|Input Capacitance|CISS|—|—|110|pF|VGS= 0V, VDS= –25V,<br>f = 1 MHz|
|Common Source Output<br>Capacitance|COSS|—|—|60|pF||
|Reverse Transfer Capacitance|CRSS|—|—|22|pF||
|Turn-On Delay Time|td(ON)|—|—|20|ns|VDD= –25V, ID= –150 mA,<br>RGEN= 25Ω|
|Rise Time|tr|—|—|15|ns||
|Turn-Off Delay Time|td(OFF)|—|—|25|ns||
|Fall Time|tf|—|—|25|ns||
|**DIODE PARAMETER**|||||||
|Diode Forward Voltage Drop|VSD|—|—|–1.8|V|VGS= 0V, ISD= –200 mA<br>(**Note 1**)|
|Reverse Recovery Time|trr|—|800|—|ns|VGS= 0V, ISD= –200 mA|



**Note 1:** All DC parameters are 100% tested at 25°C unless otherwise stated.(Pulse test: 300 µs pulse, 2% duty cycle.) 

DS20005704C-page 3 

 2018-2020 Microchip Technology Inc. 

**TP5335** 

## **AC ELECTRICAL CHARACTERISTICS – AUTOMOTIVE** 

**Electrical Specifications:** TA = TJ = 25°C unless otherwise specified. Specification is obtained by characterization and is not 100% tested. 

|**AC ELECTRICAL CHARACTERISTICS – AUTOMOTIVE**|**AC ELECTRICAL CHARACTERISTICS – AUTOMOTIVE**|**AC ELECTRICAL CHARACTERISTICS – AUTOMOTIVE**|**AC ELECTRICAL CHARACTERISTICS – AUTOMOTIVE**|**AC ELECTRICAL CHARACTERISTICS – AUTOMOTIVE**|**AC ELECTRICAL CHARACTERISTICS – AUTOMOTIVE**|**AC ELECTRICAL CHARACTERISTICS – AUTOMOTIVE**|
|---|---|---|---|---|---|---|
|**Electrical Specifications:**TA= TJ= 25°C unless otherwise specified. Specification is obtained by characterization<br>and is not 100% tested.|||||||
|**Parameter**|**Sym.**|**Min.**|**Typ.**|**Max.**|**Unit**|**Conditions**|
|Forward Transconductance|GFS|—|285|—|mmho|VDS= –25V, ID= –200 mA|
|Input Capacitance|CISS|—|80|—|pF|VGS= 0V, VDS= –25V,<br>f = 1 MHz|
|Common Source Output<br>Capacitance|COSS|—|12|—|pF||
|Reverse Transfer Capacitance|CRSS|—|2|—|pF||
|Turn-On Delay Time|td(ON)|—|7.6|—|ns|VDD= –25V, ID= –150 mA,<br>RGEN= 25Ω|
|Rise Time|tr|—|3|—|ns||
|Turn-Off Delay Time|td(OFF)|—|19|—|ns||
|Fall Time|tf|—|10|—|ns||
|**DIODE PARAMETER**|||||||
|Diode Forward Voltage Drop|VSD|—|—|**–1.8**|V|VGS= 0V, ISD= –200 mA<br>(**Note 1**)|
|Reverse Recovery Time|trr|—|450|—|ns|VGS= 0V, ISD= –200 mA|



**Note 1:** 100% Production Tested at TA = TJ = (–55°C, 25°C, and 150°C). 

## **TEMPERATURE SPECIFICATIONS** 

|**Parameter**|**Sym.**|**Min.**|**Typ.**|**Max.**|**Unit**|**Conditions**|
|---|---|---|---|---|---|---|
|**TEMPERATURE RANGE**|||||||
|Operating Junction Temperature|TJ|–55|—|+150|°C||
|Storage Temperature|TS|–55|—|+150|°C||
|**PACKAGE THERMAL RESISTANCE**|||||||
|3-lead SOT-23|JA|—|203|—|°C/W||



## **THERMAL CHARACTERISTICS** 

|**Package**|**ID (Note 1)**<br>**(Continuous)**<br>**(mA)**|**ID**<br>**(Pulsed)**<br>**(mA)**|**Power Dissipation at**<br>**TA = 25°C**<br>**(W)**|**IDR(Note 1)**<br>**(mA)**|**IDRM**<br>**(mA)**|
|---|---|---|---|---|---|
|3-lead SOT-23|–85|–400|0.36|–85|–400|



**Note 1:** ID (continuous) is limited by maximum TJ. 

DS20005704C-page 4 

 2018-2020 Microchip Technology Inc. 

**TP5335** 

## **2.0 PIN DESCRIPTION** 

Table 2-1 shows the description of pins in TP5335 SOT-23. Refer to **Package Type** for the location of pins. 

## **TABLE 2-1: PIN FUNCTION TABLE** 

|**Pin Number**|**Pin Name**|**Description**|
|---|---|---|
|1|Gate|Gate|
|2|Source|Source|
|3|Drain|Drain|



DS20005704C-page 5 

 2018-2020 Microchip Technology Inc. 

**TP5335** 

## **3.0 FUNCTIONAL DESCRIPTION** 

Figure 3-1 illustrates the switching waveforms and test circuit for TP5335. 

**==> picture [420 x 114] intentionally omitted <==**

**----- Start of picture text -----**<br>
0V Pulse<br>10%<br>Generator<br>INPUT<br>-10V 90% RGEN<br>t(ON) t(OFF)<br>D.U.T.<br>td(ON) tr td(OFF) tf INPUT<br>OUTPUT<br>0V<br>OUTPUT 90% 90% RL<br>10% 10%<br>VDD<br>VDD<br>**----- End of picture text -----**<br>


_**FIGURE 3-1:** Switching Waveforms and Test Circuit._ 

## **TABLE 3-1: PRODUCT SUMMARY** 

|**BVDSS/BVDGS**<br>**(V)**|**RDS(ON)**<br>**(Maximum)**<br>**(Ω)**|**VGS(th)**<br>**(Maximum)**<br>**(V)**|
|---|---|---|
|–350|30|–2.4|



DS20005704C-page 6 

 2018-2020 Microchip Technology Inc. 

**TP5335** 

## **4.0 PACKAGING INFORMATION** 

## **4.1 Package Marking Information** 

**==> picture [175 x 82] intentionally omitted <==**

**----- Start of picture text -----**<br>
3-lead SOT-23 Example<br>XXXNNN P3S515<br>**----- End of picture text -----**<br>


**Legend:** XX...X Product Code or Customer-specific information Y Year code (last digit of calendar year) YY Year code (last 2 digits of calendar year) WW Week code (week of January 1 is week ‘01’) NNN Alphanumeric traceability code e3 Pb-free JEDEC[®] designator for Matte Tin (Sn) ***** This package is Pb-free. The Pb-free JEDEC designator (     ) e3 can be found on the outer packaging for this package. **Note** : In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for product code or customer-specific information. Package may or not include the corporate logo. 

DS20005704C-page 7 

 2018-2020 Microchip Technology Inc. 

**TP5335** 

## **3-Lead TO-236AB (SOT-23) Package Outline (K1/T)** _**2.90x1.30mm body, 1.12mm height (max), 1.90mm pitch**_ 

**==> picture [361 x 243] intentionally omitted <==**

**----- Start of picture text -----**<br>
D<br>3<br>E1 E<br>0.25 Gauge<br>Plane<br>1 2 L Seating<br>Plane<br>L1<br>e b<br>e1<br>Top View View B<br>A View B<br>A2<br>A<br>Seating<br>Plane<br>A1<br>Side View A View A - A<br>**----- End of picture text -----**<br>


**Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging.** 

|**Symbol**|**Symbol**|**A**|**A1**|**A2**|**b**|**D**|**E**|**E1**|**e**|**e1**|**L**|**L1**|**�**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Dimension<br>(mm)|MIN|0.89|0.01|0.88|0.30|2.80|2.10|1.20|||0.20_†_||0O|
||NOM|-|-|0.95|-|2.90|-|1.30|0.9<br>BS|5<br>C<br>1.90<br>BSC|0.50|0.54<br>REF|-|
||MAX|1.12|0.10|1.02|0.50|3.04|2.64|1.40|||0.60||8O|
|_JEDEC Registration TO-236, Variation AB, Issue H, Jan._<br>_† This dimension differs from the JEDEC drawing._<br>**_Drawings not to scale._**|||||_1999._|||||||||



DS20005704C-page 8 

 2018-2020 Microchip Technology Inc. 

**TP5335** 

## **APPENDIX A: REVISION HISTORY** 

## **Revision A (December 2018)** 

- Converted Supertex Doc# DSFP-TP5335 to Microchip DS20005704A 

- Made minor text changes throughout the document 

## **Revision B (February 2020)** 

- Revised the order of pins in the Pin Function Table 

- Revised the Electrical Specifications and included notes in the DC Electrical Characteristics and AC Electrical Characteristics tables 

- Made minor text changes throughout the document 

## **Revision C (June 2020)** 

- Added automotive specifications to the Electrical Characteristics section 

- Added automotive specifications to the Product Identification System section 

- Made minor text changes throughout the document 

DS20005704C-page 9 

 2018-2020 Microchip Technology Inc. 

**TP5335** 

## **PRODUCT IDENTIFICATION SYSTEM** 

To order or obtain information, e.g., on pricing or delivery, contact your local Microchip representative or sales office. 

||**PART NO.**|**XX**|**XX**||**-X**<br>|**-**|**X**<br>|**-**|**X**|**X**||**Example:**||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||**Device**<br> <br>|**Package**<br> <br>**Options**|||**Environmental**||**Media Type**<br>|**Option**||||a) TP5335K1-G:|P-Channel Enhancement-<br>Mode Vertical DMOS FET,|
||||||||||||||3-lead SOT-23, 3000/Reel|
||Device:|TP5335||=|P-Channel Enhancement-Mode Vertical|||||||b) TP5335K1-G-VAO:|P-Channel Enhancement-|
||||||DMOS FET||||||||Mode Vertical DMOS FET,|
||||||||||||||Automotive Grade, 3-lead|
||||||||||||||SOT-23, 3000/Reel|
||Package:|K1||=|3-lead SOT-23|||||||||
||Environmental:|G||=|Lead (Pb)-free/RoHS-compliant Package|||||||||
||Media Type:|(blank)||=|3000/Reel for a|K1|Package|||||||
||Option:|VAO||=|Automotive Grade|||||||||
|||||||||||||||



DS20005704C-page 10 

 2018-2020 Microchip Technology Inc. 

## **Note the following details of the code protection feature on Microchip devices:** 

- Microchip products meet the specification contained in their particular Microchip Data Sheet. 

- Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. 

- There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. 

- Microchip is willing to work with the customer who is concerned about the integrity of their code. 

- Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” 

Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. 

Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE **.** Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights unless otherwise stated. 

## **Trademarks** 

The Microchip name and logo, the Microchip logo, Adaptec, AnyRate, AVR, AVR logo, AVR Freaks, BesTime, BitCloud, chipKIT, chipKIT logo, CryptoMemory, CryptoRF, dsPIC, FlashFlex, flexPWR, HELDO, IGLOO, JukeBlox, KeeLoq, Kleer, LANCheck, LinkMD, maXStylus, maXTouch, MediaLB, megaAVR, Microsemi, Microsemi logo, MOST, MOST logo, MPLAB, OptoLyzer, PackeTime, PIC, picoPower, PICSTART, PIC32 logo, PolarFire, Prochip Designer, QTouch, SAM-BA, SenGenuity, SpyNIC, SST, SST Logo, SuperFlash, Symmetricom, SyncServer, Tachyon, TempTrackr, TimeSource, tinyAVR, UNI/O, Vectron, and XMEGA are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. 

APT, ClockWorks, The Embedded Control Solutions Company, EtherSynch, FlashTec, Hyper Speed Control, HyperLight Load, IntelliMOS, Libero, motorBench, mTouch, Powermite 3, Precision Edge, ProASIC, ProASIC Plus, ProASIC Plus logo, Quiet-Wire, SmartFusion, SyncWorld, Temux, TimeCesium, TimeHub, TimePictra, TimeProvider, Vite, WinPath, and ZL are registered trademarks of Microchip Technology Incorporated in the U.S.A. 

Adjacent Key Suppression, AKS, Analog-for-the-Digital Age, Any Capacitor, AnyIn, AnyOut, BlueSky, BodyCom, CodeGuard, CryptoAuthentication, CryptoAutomotive, CryptoCompanion, CryptoController, dsPICDEM, dsPICDEM.net, Dynamic Average Matching, DAM, ECAN, EtherGREEN, In-Circuit Serial Programming, ICSP, INICnet, Inter-Chip Connectivity, JitterBlocker, KleerNet, KleerNet logo, memBrain, Mindi, MiWi, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, MultiTRAK, NetDetach, Omniscient Code Generation, PICDEM, PICDEM.net, PICkit, PICtail, PowerSmart, PureSilicon, QMatrix, REAL ICE, Ripple Blocker, SAM-ICE, Serial Quad I/O, SMART-I.S., SQI, SuperSwitcher, SuperSwitcher II, Total Endurance, TSHARC, USBCheck, VariSense, ViewSpan, WiperLock, Wireless DNA, and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. 

SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. 

The Adaptec logo, Frequency on Demand, Silicon Storage Technology, and Symmcom are registered trademarks of Microchip Technology Inc. in other countries. 

GestIC is a registered trademark of Microchip Technology Germany II GmbH & Co. KG, a subsidiary of Microchip Technology Inc., in other countries. 

All other trademarks mentioned herein are property of their respective companies. 

- © 2018-2020, Microchip Technology Incorporated, All Rights Reserved. 

_For information regarding Microchip’s Quality Management Systems, please visit www.microchip.com/quality._ 

ISBN: 978-1-5224-6243-9 

DS20005704C-page 11 

 2018-2020 Microchip Technology Inc. 

## **Worldwide Sales and Service** 

## **AMERICAS** 

**Corporate Office** 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7200 Fax: 480-792-7277 Technical Support: http://www.microchip.com/ support Web Address: www.microchip.com 

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**Boston** Westborough, MA Tel: 774-760-0087 Fax: 774-760-0088 

**Chicago** Itasca, IL Tel: 630-285-0071 Fax: 630-285-0075 

**Dallas** Addison, TX Tel: 972-818-7423 Fax: 972-818-2924 

**Detroit** Novi, MI Tel: 248-848-4000 

**Houston, TX** Tel: 281-894-5983 

**Indianapolis** Noblesville, IN Tel: 317-773-8323 Fax: 317-773-5453 Tel: 317-536-2380 

**Los Angeles** Mission Viejo, CA Tel: 949-462-9523 Fax: 949-462-9608 Tel: 951-273-7800 

**Raleigh, NC** Tel: 919-844-7510 

**New York, NY** Tel: 631-435-6000 

**San Jose, CA** Tel: 408-735-9110 Tel: 408-436-4270 

**Canada - Toronto** Tel: 905-695-1980 Fax: 905-695-2078 

## **ASIA/PACIFIC** 

**Australia - Sydney** Tel: 61-2-9868-6733 **China - Beijing** Tel: 86-10-8569-7000 

**China - Chengdu** Tel: 86-28-8665-5511 **China - Chongqing** Tel: 86-23-8980-9588 

**China - Dongguan** Tel: 86-769-8702-9880 

**China - Guangzhou** Tel: 86-20-8755-8029 

**China - Hangzhou** Tel: 86-571-8792-8115 

**China - Hong Kong SAR** Tel: 852-2943-5100 

**China - Nanjing** Tel: 86-25-8473-2460 

**China - Qingdao** Tel: 86-532-8502-7355 **China - Shanghai** Tel: 86-21-3326-8000 

**China - Shenyang** Tel: 86-24-2334-2829 

**China - Shenzhen** Tel: 86-755-8864-2200 **China - Suzhou** Tel: 86-186-6233-1526 

**China - Wuhan** Tel: 86-27-5980-5300 **China - Xian** Tel: 86-29-8833-7252 

**China - Xiamen** Tel: 86-592-2388138 

**China - Zhuhai** Tel: 86-756-3210040 

## **ASIA/PACIFIC** 

**India - Bangalore** Tel: 91-80-3090-4444 **India - New Delhi** Tel: 91-11-4160-8631 

**India - Pune** Tel: 91-20-4121-0141 **Japan - Osaka** Tel: 81-6-6152-7160 

**Japan - Tokyo** Tel: 81-3-6880- 3770 

**Korea - Daegu** Tel: 82-53-744-4301 

**Korea - Seoul** Tel: 82-2-554-7200 

**Malaysia - Kuala Lumpur** Tel: 60-3-7651-7906 

**Malaysia - Penang** Tel: 60-4-227-8870 **Philippines - Manila** Tel: 63-2-634-9065 **Singapore** Tel: 65-6334-8870 **Taiwan - Hsin Chu** Tel: 886-3-577-8366 

**Taiwan - Kaohsiung** Tel: 886-7-213-7830 

**Taiwan - Taipei** Tel: 886-2-2508-8600 

**Thailand - Bangkok** Tel: 66-2-694-1351 

**Vietnam - Ho Chi Minh** Tel: 84-28-5448-2100 

## **EUROPE** 

**Austria - Wels** Tel: 43-7242-2244-39 Fax: 43-7242-2244-393 

**Denmark - Copenhagen** Tel: 45-4485-5910 Fax: 45-4485-2829 

**Finland - Espoo** Tel: 358-9-4520-820 

**France - Paris** Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79 

**Germany - Garching** Tel: 49-8931-9700 

**Germany - Haan** Tel: 49-2129-3766400 **Germany - Heilbronn** Tel: 49-7131-72400 

**Germany - Karlsruhe** Tel: 49-721-625370 

**Germany - Munich** Tel: 49-89-627-144-0 Fax: 49-89-627-144-44 **Germany - Rosenheim** Tel: 49-8031-354-560 

**Israel - Ra’anana** Tel: 972-9-744-7705 

**Italy - Milan** Tel: 39-0331-742611 Fax: 39-0331-466781 

**Italy - Padova** Tel: 39-049-7625286 

**Netherlands - Drunen** Tel: 31-416-690399 Fax: 31-416-690340 

**Norway - Trondheim** Tel: 47-7288-4388 

**Poland - Warsaw** Tel: 48-22-3325737 

**Romania - Bucharest** Tel: 40-21-407-87-50 

**Spain - Madrid** Tel: 34-91-708-08-90 Fax: 34-91-708-08-91 

**Sweden - Gothenberg** Tel: 46-31-704-60-40 

**Sweden - Stockholm** Tel: 46-8-5090-4654 

**UK - Wokingham** Tel: 44-118-921-5800 

Fax: 44-118-921-5820 

DS20005704C-page 12 

 2018-2020 Microchip Technology Inc. 

02/28/20 



## Links

- [View this product on Novapart](https://novapart.co/products/TP5335K1-G/power-mosfet-dmos-p-channel-350-v-85-ma-30-ohm-to)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/microchip/tp5335k1-g/mosfet-350v-0-085a-150deg-c-0/dp/2920690RL)
---

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