# Power MOSFET, P Channel, 60 V, 320 mA, 3.5 ohm, TO-92, Through Hole

![Product image](https://novapart.co/image/farnell:2809989/)

**URL**: https://novapart.co/products/TP0606N3-G/power-mosfet-p-channel-60-v-320-ma-35-ohm-to-92
**SKU**: TP0606N3-G
**Manufacturer**: MICROCHIP
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.5320
**Stock**: 1000+
**Lead Time**: 36 days (indicative)

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:-320mA; Drain Source Voltage Vds:-60V; On Resistance Rds(on):3ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.4

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (04-Feb-2026) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-92 |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 320mA |
| Drain Source On State Resistance | 3.5ohm |
| Gate Source Threshold Voltage Max | 2.4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2809989/)

**TP0606** 

## **P-Channel Enhancement-Mode Vertical DMOS FET** 

## **Features** 

- Low threshold (-2.4V max.) 

- High input  impedance 

- Low input capacitance (80pF typ.) 

- Fast switching speeds 

- Low on-resistance 

- Free from secondary breakdown 

- Low input and output leakage 

## **Applications** 

- Logic level interfaces – ideal for TTL and CMOS 

- Solid state relays 

- Battery operated systems 

- Photo voltaic drives 

## **General Description** 

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. 

Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. 

- Analog switches 

- General purpose line drivers 

- Telecom switches 

## **Ordering Information** 

|**Device**<br>**Package Option**<br>**BVDSS/BVDGS**<br>**(V)**<br>**RDS(ON)**<br>**(max)**<br>**(Ω)**<br>**ID(ON)**<br>**(min)**<br>**(A)**<br>**VGS(th)**<br>**(max)**<br>**(V)**<br>**TO-92**<br>TP0606<br>TP0606N3-G<br>-60<br>3.5<br>-1.5<br>-2.4<br>_-G indicates package is RoHS compliant (‘Green’)_<br>~~es(GG~~|**Device**<br>**Package Option**<br>**BVDSS/BVDGS**<br>**(V)**<br>**RDS(ON)**<br>**(max)**<br>**(Ω)**<br>**ID(ON)**<br>**(min)**<br>**(A)**<br>**VGS(th)**<br>**(max)**<br>**(V)**<br>**TO-92**<br>TP0606<br>TP0606N3-G<br>-60<br>3.5<br>-1.5<br>-2.4<br>_-G indicates package is RoHS compliant (‘Green’)_<br>~~es(GG~~|**Device**<br>**Package Option**<br>**BVDSS/BVDGS**<br>**(V)**<br>**RDS(ON)**<br>**(max)**<br>**(Ω)**<br>**ID(ON)**<br>**(min)**<br>**(A)**<br>**VGS(th)**<br>**(max)**<br>**(V)**<br>**TO-92**<br>TP0606<br>TP0606N3-G<br>-60<br>3.5<br>-1.5<br>-2.4<br>_-G indicates package is RoHS compliant (‘Green’)_<br>~~es(GG~~|**Device**<br>**Package Option**<br>**BVDSS/BVDGS**<br>**(V)**<br>**RDS(ON)**<br>**(max)**<br>**(Ω)**<br>**ID(ON)**<br>**(min)**<br>**(A)**<br>**VGS(th)**<br>**(max)**<br>**(V)**<br>**TO-92**<br>TP0606<br>TP0606N3-G<br>-60<br>3.5<br>-1.5<br>-2.4<br>_-G indicates package is RoHS compliant (‘Green’)_<br>~~es(GG~~|**Device**<br>**Package Option**<br>**BVDSS/BVDGS**<br>**(V)**<br>**RDS(ON)**<br>**(max)**<br>**(Ω)**<br>**ID(ON)**<br>**(min)**<br>**(A)**<br>**VGS(th)**<br>**(max)**<br>**(V)**<br>**TO-92**<br>TP0606<br>TP0606N3-G<br>-60<br>3.5<br>-1.5<br>-2.4<br>_-G indicates package is RoHS compliant (‘Green’)_<br>~~es(GG~~|**Device**<br>**Package Option**<br>**BVDSS/BVDGS**<br>**(V)**<br>**RDS(ON)**<br>**(max)**<br>**(Ω)**<br>**ID(ON)**<br>**(min)**<br>**(A)**<br>**VGS(th)**<br>**(max)**<br>**(V)**<br>**TO-92**<br>TP0606<br>TP0606N3-G<br>-60<br>3.5<br>-1.5<br>-2.4<br>_-G indicates package is RoHS compliant (‘Green’)_<br>~~es(GG~~|**Device**<br>**Package Option**<br>**BVDSS/BVDGS**<br>**(V)**<br>**RDS(ON)**<br>**(max)**<br>**(Ω)**<br>**ID(ON)**<br>**(min)**<br>**(A)**<br>**VGS(th)**<br>**(max)**<br>**(V)**<br>**TO-92**<br>TP0606<br>TP0606N3-G<br>-60<br>3.5<br>-1.5<br>-2.4<br>_-G indicates package is RoHS compliant (‘Green’)_<br>~~es(GG~~|
|---|---|---|---|---|---|---|
|on INtis|||||||
|~~<<br>Compliant<br>,46<br>°9 (pp)<|||**Pin Configurations**<br>€.||||
||||||**DRAIN**||
|**Absolute Maximum Ratings **||||**SOURCE**|||
|**Parameter**||**Value**|||**GATE**||
|Drain-to-source voltage||BVDSS|||**TO-92 (N3)**||



|**Parameter**|**Value**|
|---|---|
|Drain-to-source voltage|BVDSS|
|Drain-to-gate voltage|BVDGS|
|Gate-to-source voltage|±20V|
|Operatingand storage temperature|-55OC to +150OC|
|Solderingtemperature*|300OC|



## **Product Marking** 

||**SiTP**<br>**0 6 0 6**<br>**Y Y WW**|YY = Year Sealed<br>WW = Week Sealed<br> = “Green” Packaging|
|---|---|---|
|_Package may or may not include the following marks: Si or_<br>i]|||



_Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground._ 

**TO-92 (N3)** 

_*    Distance of 1.6mm from case for 10 seconds._ 

●  1235 Bordeaux Drive, Sunnyvale, CA 94089  ●  Tel: 408-222-8888  ●  www.supertex.com 

**TP0606** 

## **Thermal Characteristics** 

**==> picture [542 x 57] intentionally omitted <==**

**----- Start of picture text -----**<br>
ID ID Power Dissipation θ θ I † I<br>Package (continuous) [†] (pulsed) @TC = 25 [O] C jc ja DR DRM<br>( [O] C/W) ( [O] C/W) (mA) (A)<br>(mA) (A) (W)<br>TO-92 320 -3.5 1.0 125 170 320 -3.5<br>**----- End of picture text -----**<br>


## _**Notes:**_ 

_†  ID (continuous) is limited by max rated Tj ._ 

## **Electrical Characteristics** _(TA = 25[O] C unless otherwise specified)_ 

**==> picture [542 x 363] intentionally omitted <==**

**----- Start of picture text -----**<br>
Sym Parameter Min Typ Max Units Conditions<br>BVDSS Drain-to-source breakdown voltage -60 - - V VGS = 0V, ID = -2.0mA<br>VGS(th) Gate threshold voltage -1.0 - -2.4 V VGS = VDS, ID= -1.0mA<br>ΔVGS(th) Change in VGS(th) with temperature - - -5.0 mV/ [O] C VGS = VDS, ID= -1.0mA<br>IGSS Gate body leakage - - -100 nA VGS = ± 20V, VDS = 0V<br>- - -10 µA VGS = 0V, VDS = Max Rating<br>IDSS Zero gate voltage drain current - - -1.0 mA VDS = 0.8 Max Rating,<br>VGS = 0V, TA = 125°C<br>I ON-state drain current -0.4 -0.6 - A VGS = -5.0V, VDS = -25V<br>D(ON) -1.5 -2.5 - VGS = -10V, VDS = -25V<br>R Static drain-to-source on-state resistance - 5.0 7.0 Ω VGS = -5.0V, ID = -250mA<br>DS(ON) - 3.0 3.5 VGS = -10V, ID = -750mA<br>ΔRDS(ON) Change in RDS(ON) with temperature - - 1.7 %/ [O] C VGS = -10V, ID = -750mA<br>GFS Forward transductance 300 400 - mmho  VDS = -25V, ID = -750mA<br>CISS Input capacitance - 80 150 VGS = 0V,<br>COSS Common source output capacitance - 50 85 pF VDS = -25V,<br>CRSS Reverse transfer capacitance - 15 35 f = 1.0MHz<br>td(ON) Turn-on delay time  - - 10<br>t Rise time - - 15 VDD = -25V,<br>td(OFF)r Turn-off delay time - - 20 ns IRD = -1.0A,GEN = 25Ω<br>t Fall time - - 15<br>f<br>VSD Diode forward voltage drop - - -1.8 V VGS = 0V, ISD = -1.0A<br>trr Reverse recovery time - 300 - ns VGS = 0V, ISD = -1.0A<br>**----- End of picture text -----**<br>


_**Notes:**_ 

_1. All D.C. parameters 100% tested at 25[O] C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)_ 

_2. All A.C. parameters sample tested._ 

## **Switching Waveforms and Test Circuit** 

**==> picture [416 x 101] intentionally omitted <==**

**----- Start of picture text -----**<br>
0V PULSE<br>10%<br>GENERATOR<br>INPUT<br>-10V 90% RGEN<br>t(ON) t(OFF)<br>D.U.T.<br>td(ON) tr td(OFF) tF<br>0V INPUT Output<br>OUTPUT 90% 90% RL<br>VDD 10% 10% VDD<br>**----- End of picture text -----**<br>


●  1235 Bordeaux Drive, Sunnyvale, CA 94089  ●  Tel: 408-222-8888  ●  www.supertex.com 

2 

**TP0606** 

## **Typical Performance Curves** 

**==> picture [452 x 624] intentionally omitted <==**

**----- Start of picture text -----**<br>
Output Characteristics Saturation Characteristics<br>-5 -5<br>-4 -4<br>-3 -3<br>VGS = -10V VGS = -10V<br>-2 -2<br>-8V<br>-8V<br>-1 -1<br>-6V -6V<br>-4V -4V<br>0 0<br>0 -10 -20 -30 -40 -50 0 -2 -4 -6 -8 -10<br>VDS (volts) VDS (volts)<br>Transconductance vs. Drain Current Power Dissipation vs. Case Temperature<br>0.6 2.0<br>VVDSDS = -25V= -25V<br>TA = -55°C<br>0.5<br>TA = 25°C<br>0.4<br>TO-92<br>1.0<br>TA = 150°C<br>0.3<br>0.2<br>0 0<br>0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 -3.2 0 25 50 75 100 125 150<br>I D (amperes) TC (°C)<br>Maximum Rated Safe Operating Area Thermal Response Characteristics<br>-10 1.0<br>TC = 25°C<br>0.8<br>-1.0<br>0.6<br>0.4<br>-0.1 TO-92 (DC)<br>0.2 TO-92<br>PD = 1W<br>TC = 25°C<br>-0.01 0<br>-1 -10 -100 -1000 0.001 0.01 0.1 1 10<br>VDS (volts) t p (seconds)<br>)s )s<br>ere ere<br>p p<br>m m<br>a a<br>(  (<br>ID ID<br>)s<br>n<br>e )<br>m stt<br>(eis (aw<br>GSF PD<br>)d<br>e<br>zila<br>)s mron<br>erep ( ecn<br>m a<br>a<br>( ID tsisRe<br> la<br>mre<br>h<br>T<br>**----- End of picture text -----**<br>


●  1235 Bordeaux Drive, Sunnyvale, CA 94089  ●  Tel: 408-222-8888  ●  www.supertex.com 

3 

**TP0606** 

## **Typical Performance Curves** _**(cont.)**_ 

**==> picture [467 x 605] intentionally omitted <==**

**----- Start of picture text -----**<br>
BV DSS [Variation with Temperature] On-Resistance vs. Drain Current<br>1.1 15<br>VGS = -5V<br>12<br>9<br>1.0<br>VGS = -10V<br>6<br>3<br>0.9 0<br>-50 0 50 100 150 0 -0.8 -1.6 -2.4 -3.2 -4.0<br>Tj  (°C) ID (amperes)<br>Transfer Characteristics V(th) and RDS Variation with Temperature<br>-5 2.0<br>1.4<br>-4 VDS = -25V R-10V, -0.75ADS(ON) @ 1.6<br>1.2<br>1.2<br>-3<br>1.0<br>0.8<br>-2<br>0.8<br>V(th) @ -1mA<br>0.4<br>-1<br>0.6<br>0 0<br>0 -2 -4 -6 -8 -10 -50 0 50 100 150<br>VGS (volts) Tj (°C)<br>Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics<br>200 -10<br>f = 1MHz<br>VDS = -10V<br>-8<br>150<br>200 pF<br>-6<br>100<br>CISS -4 VDS = -40V<br>50<br>-2<br>CRSS 75 pF<br>0 0<br>0 -10 -20 -30 -40 0 0.5 1.0 1.5 2.0 2.5<br>VDS (volts) QG (nanocoulombs)<br>COSS<br>°C<br>=150<br>TA<br>A<br>°C<br>=25<br>T<br>°C<br>T<br>= 5- 5<br>A<br>)de )s<br>zila hm<br>(mronS (o)O(SN<br>S D<br>VD R<br>B<br>)<br>) d<br>d e<br>)resep zilaemr zilamro<br>ma (on (n)<br>( ID )t(Sh O(SN<br>G D<br>V R<br>)ds )<br>ar<br>foa (stlov<br>S<br>cip G<br>(  V<br>C<br>**----- End of picture text -----**<br>


●  1235 Bordeaux Drive, Sunnyvale, CA 94089  ●  Tel: 408-222-8888  ●  www.supertex.com 

4 

**TP0606** 

## **3-Lead TO-92 Package Outline (N3)** 

**==> picture [322 x 364] intentionally omitted <==**

**----- Start of picture text -----**<br>
D<br>A<br>Seating Plane 1   2   3<br>L<br>b<br>c<br>e1<br>e<br>Front View Side View<br>E<br>E1<br>1 3<br>2<br>Bottom View<br>**----- End of picture text -----**<br>


**==> picture [542 x 73] intentionally omitted <==**

**----- Start of picture text -----**<br>
Symbol A b c D E E1 e e1 L<br>MIN .170 .014 [†] .014 [†] .175 .125 .080 .095 .045 .500<br>Dimensions<br>NOM - - - - - - - - -<br>(inches)<br>MAX .210 .022 [†] .022 [†] .205 .165 .105 .105 .055 .610*<br>**----- End of picture text -----**<br>


_JEDEC Registration TO-92._ 

_† This dimension is a non-JEDEC dimension._ 

_**Drawings not to scale.**_ 

_**Supertex Doc.#:** DSPD-3TO92N3, Version D080408._ 

_information go to http://www.supertex.com/packaging.html.)_ 

**Supertex inc.** does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” **Supertex inc.** does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the **Supertex inc.** website: http//www.supertex.com. 

> ©2009 All rights reserved. Unauthorized use or reproduction is prohibited. 

1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 _**www.supertex.com**_ 

_Doc.# DSFP-TP0606 A022309_ 

5 



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---

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