# Thyristor, 1.2 kV, 50 mA, 51 A, 80 A, TOP-3I, 3 Pins ![Product image](https://novapart.co/image/farnell:4285539/) **URL**: https://novapart.co/products/TN8050H-12PI/thyristor-12-kv-50-ma-51-a-80-top-3i-3-pins **SKU**: TN8050H-12PI **Manufacturer**: STMICROELECTRONICS **Category**: Semiconductors - Discretes || Thyristors || Thyristors - SCRs **Price**: €2.0800 **Stock**: 10+ **Lead Time**: 281 days (indicative) ## Specifications | Parameter | Value | |---|---| | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 3Pins | | Product Range | - | | Thyristor Mounting | Through Hole | | Holding Current Max | 100mA | | On State Rms Current | 80A | | Thyristor Case Style | TOP-3I | | Average On State Current | 51A | | Gate Trigger Current Max | 50mA | | Gate Trigger Voltage Max | 1V | | Operating Temperature Max | 150°C | | Peak Non Repetitive Surge Current | 745A | | Peak Repetitive Off State Voltage | 1.2kV | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:4285539/) **TN8050H-12PI** Datasheet **==> picture [135 x 36] intentionally omitted <==** ## 80 A 1200 V 150 °C junction temperature SCR in TOP3 package **==> picture [77 x 149] intentionally omitted <==** **----- Start of picture text -----**
A
G
K
K
A
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TOP3 Isolated
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## **Features** - Max. blocking voltage = VDRM, VRRM = 1200 V - Max. surge voltage = VDSM, VRSM = 1400 V - IGT maximum = 50 mA - Max. junction temperature = 150 °C at VD/VR = 800 V - High static and dynamic commutation: - dI/dt = 200 A/µs - dV/dt = 1500 V/µs - ECOPACK2 compliant component (RoHS and HF compliance) - Complies with UL1557 standard (file ref: E81734) rated at 2.5 kV RMS thanks to it's ceramic insulator - UL94, level V0 molding resin compliance ## **Application** **Product status** TN8050H-12PI - Solar / Wind renewable energy inverters and rectifiers - Solid state relay (SSR) - Uninterruptible power supply (UPS) - Industrial SMPS |**Product summary**|**Product summary**| |---|---| |**IT(RMS)**|80 A| |**VDRM/VRRM**|1200 V| |**VDSM/VRSM**|1400 V| |**IGT max.**|50 mA| |**Tj max.**|150 °C| |**Package**|TOP3 ins.| - Battery charger - Soft starter for motor control - AC/DC inrush current limiter (ICL) - AC/DC voltage controlled rectifier - Heating resistor control for heaters and welding systems ## **Description** The TN8050H-12PI high temperature SCR is suitable in industrial applications where high immunity is required with a lower gate current, such as motor soft starter and power supply. In addition, its 1400 V surge capability brings robustness to grid application such as UPS or renewable energy inverters. The insulated TOP3 package allows simplified design assembly thanks to its 2.5 kV certified rated insulation. **DS13731** - **Rev 1** - **April 2023** For further information contact your local STMicroelectronics sales office. www.st.com **TN8050H-12PI Characteristics** **1** ## **Characteristics** **Table 1. Absolute maximum ratings (limiting values)** |**Symbol**|**Parameter**|**Parameter**||**Value**|**Unit**| |---|---|---|---|---|---| |VDRM, VRRM|Repetitive peak off-state voltage (50-60 Hz)||Tj= 125 °C|1200|V| ||||Tj= 150 °C|800|| |VDSM, VRSM|Non-repetitive surge voltage||Tj= 25 °C|1400|V| |IT(RMS)|On-state RMS current (180 ° conduction angle)||Tc= 55 °C|80|A| |IT(AV)|Average on-state current (180 ° conduction angle)|||51|| |ITSM|Non repetitive surge peak on-state current ( Tjinitial = 25 °C),
VR= 0 V||tp= 8.3 ms|745|A| ||||tp= 10 ms|680|| |I2t|I2t value for fusing||tp= 10 ms|2312|A2s| |dl/dt|Critical rate of rise of on-state current
IG= 2 x IGT, tr< 100 ns, Tj= 150 °C||f = 50 Hz|200|A/µs| |IGM|Maximum peak positive gate current|tp= 20 µs|Tj= 150 °C|8|A| |VGM|Maximum peak positive gate voltage|||5|V| |PG(AV)|Average gate power dissipation||Tj= 150 °C|1|W| |VRGM|Maximum peak reverse gate voltage|||3.5|V| |Tstg|Storage junction temperature range|||-40 to +150|°C| |Tj|Operating junction temperature range|||-40 to +150|| |Vins|Insulation RMS voltage; 1 min|||2.5|kV| **Table 2. Electrical characteristics (Tj = 25 °C unless otherwise specified)** |**Symbol**|**Test conditions**|||**Value**|**Unit**| |---|---|---|---|---|---| |IGT|VD= 12 V, RL= 33 Ω||Max.|50|mA| ||VD= 12 V, RL= 33 Ω|Tj= -40 °C||100|| |VGT|VD= 12 V, RL= 33 Ω||Max.|1.0|V| |VGD|VD= 800 VDRM, RL= 3.3 kΩ|Tj= 150 °C|Max.|0.15|V| |IH|IT= 500 mA, gate open||Max.|100|mA| |IL|IG= 1.2 x IGT||Max.|125|mA| |dV/dt|VD= 800 V, gate open|Tj= 125 °C|Min.|2.0|kV/µs| |||Tj= 150 °C||1.5|| |tgt|IT= 80 A, VD= VDRM, IG= 100 mA, (dIG/dt) max = 0.2 A/µs||Typ.|2.5|µs| |tq|IT= 80 A, VD= 800 V, (dI/dt) max = 10 A/µs, VR= 25 V,
dV/dt = 100 V/µs|Tj= 150 °C|Typ.|150|µs| **DS13731** - **Rev 1** **page 2/11** **TN8050H-12PI Characteristics** **Table 3. Static characteristics** |**Symbol**|**Test conditions**|||**Value**|**Unit**| |---|---|---|---|---|---| |VTM|ITM= 64 A, tp= 380 µs|Tj= 25 °C|Max.|1.55|V| |VTO|Threshold voltage|Tj= 150 °C|Max.|0.85|| |RD|Dynamic resistance|Tj= 150 °C|Max.|9.5|mΩ| |IDRM, IRRM|VDRM= VRRM= 1200 V|Tj= 25 °C|Max.|5|µA| |||Tj= 125 °C||5.5|mA| ||VDRM= VRRM= 800 V|Tj= 150 °C||15|mA| **Table 4. Thermal parameters** |**Symbol**|**Parameter**|**Parameter**|**Value**|**Unit**| |---|---|---|---|---| |Rth(j-c)|Junction to case (DC)|Typ.|0.8|°C/W| |Rth(j-a)|Junction to ambient|Typ.|50|| **DS13731** - **Rev 1** **page 3/11** **TN8050H-12PI Characteristics curves** ## **1.1 Characteristics curves** **==> picture [513 x 397] intentionally omitted <==** **----- Start of picture text -----**
Figure 1. Maximum average power dissipation versus Figure 2. Average and DC on-state current versus case
average on-state current temperature
110 P(W) 90 IT(AV)(A)
α = 180 °
100 α = 120 ° DC 80 DC
90 α = 90 ° 70
80 α = 60 °
α = 30 ° 60
70
60 50 α = 180 °
50 40 α = 120 °
α = 90 °
40 30
α = 60 °
30 360 ° 20 α = 30 °
20
10
10 α IT(AV)(A) 0 Tc(°C)
0
0 10 20 30 40 50 60 70 0 25 50 75 100 125 150
Figure 4. Average and D.C. on-state current versus
Figure 3. On-state characteristics (maximum values)
ambient temperature
1000 ITM(A) IT(AV)(A)
Tj max: 3.5
Vt0 = 0.85 V
Rd = 8.2 mΩ DC
3
100
2.5
α = 180 °
Tj = 150 °C 2
1.5
10
Tj = 25 °C 1
0.5
VTM(V)
1 Ta(°C)
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5
0 25 50 75 100 125 150
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**Figure 5. Relative variation of thermal impedance junction Figure 6. Surge peak on-state current versus number of to case and junction to ambient versus pulse duration cycles** **==> picture [482 x 152] intentionally omitted <==** **----- Start of picture text -----**
1.0E+00 K = [Zth/ Rth] 700 ITSM(A)
Zth(j-c) 650
600 Non repetitive Tj = 25 °C
550 tp=10ms
1.0E-01 500 One cycle
450
Zth(j-a) 400
Repetitive Tc = 55 °C
350
300
1.0E-02 250
200
150
100
tP(s) 50
1.0E-03 Number of cycles
0
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
1 10 100 1000
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**DS13731** - **Rev 1** **page 4/11** **TN8050H-12PI Characteristics curves** **Figure 7. Non repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms** **==> picture [226 x 147] intentionally omitted <==** **----- Start of picture text -----**
ITSM(A)
10000
dl/dt limitation 200 A/µs Tj initial = 25 °C
1000 I
TSM
100
tp(ms)
10
1.0E-04 1.0E-03 1.0E-02 1.0E-01
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**Figure 8. Relative variation of holding current and latching current versus junction temperature (typical values)** **==> picture [224 x 152] intentionally omitted <==** **----- Start of picture text -----**
2.0 IH, IL [ Tj ] / IH, IL [ Tj = 25 °C]
IH
1.6
1.2 IL
0.8
0.4
T (°C)
0.0 j
-50 -25 0 25 50 75 100 125 150
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**==> picture [513 x 191] intentionally omitted <==** **----- Start of picture text -----**
Figure 9. Relative variation of gate triggering current and Figure 10. Relative variation of static dV/dt immunity
voltage versus junction temperature versus junction temperature
IGT, VGT [ Tj ] / IGT, VGT [ Tj = 25 °C] 6 dV/dt [T j] / dV/dt [T j=150 °C]
2.5
5 VD = VR = 800 V
2.0
IGT 4
1.5
3
1.0 VGT 2
0.5
1
T (°C)
0.0 j 0 Tj(°C)
-50 -25 0 25 50 75 100 125 150 25 50 75 100 125 150
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**Figure 11. Relative variation of leakage current versus junction temperature for different values of blocking voltage (0.8 kV, 1.2 kV)** **==> picture [220 x 152] intentionally omitted <==** **----- Start of picture text -----**
1.0E+00 IDRM, IRRM [ Tj ;VDRM , VRRM] / IDRM / IRRM [ Tj max. 800 V]
V DRM= VRRM= 1200 V
1.0E-01
1.0E-02
1.0E-03 V DRM= VRRM= 800 V
1.0E-04
Tj(°C)
1.0E-05
25 50 75 100 125 150
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**DS13731** - **Rev 1** **page 5/11** **TN8050H-12PI Application** **2 Application** ## **2.1 Overvoltage surge management** The TN8050H-12PI specification in Table 1 gives a non-repetitive surge voltage forward VDSM and reverse VRSM at 1400 V, for a surge duration up to 10 ms duration at 25 °C of junction temperature. This feature allows designers headroom for overvoltage surge management in final application, reducing ratings of AC Line input protections, but also for an increased reliability of the overall application in the field, such as UPS, AC/DC converters or motor controllers. Here below is an example of an overvoltage surge, as defined in IEC61000-4-5 electromagnetic compatibility standard, applied to the TN8050H-12PI. The Figure 12. Simplified front-end circuit using TN8050H-12PI details a simplified application front-end circuit, including the surge protection, made of metal oxyde varistor, in parallel of the TN8050H-12PI. **Figure 12. Simplified front-end circuit using TN8050H-12PI** When an 1.2/50 µs overvoltage surge occurs on the AC line, the application input protection clamps the voltage across the TN8050H-12PI SCR. Thanks to the extra VDSM / VRSM specification, the maximum allowed voltage across the SCR is 1400 V. The waveform Figure 13. Waveform of line and SCR voltages illustrates the voltage across the AC Line and the SCR during a 6 kV surge event, performed within the Figure 12. Simplified front-end circuit using TN8050H-12PI left test schematic, when the junction temperature equals the maximum junction temperature of the TN8050H-12PI: Tj max = 150 °C, the device still withstands the stress when the occurrence is up to 10 surges, on each polarity, according to the IEC61000-4-5 standard. **Figure 13. Waveform of line and SCR voltages** **DS13731** - **Rev 1** **page 6/11** **TN8050H-12PI Package information** **3 Package information** In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. ## **3.1 TOP3 insulated package information** - ECOPACK (lead-free plating and halogen free package compliance) - Lead-free package leads finishing - Halogen-free molding compound resin meets UL94 standard level V0 - Recommended torque: 1.05 N·m (max. torque: 1.2 N·m) **Figure 14. Package outline** **==> picture [312 x 371] intentionally omitted <==** **DS13731** - **Rev 1** **page 7/11** **TN8050H-12PI TOP3 insulated package information** **Table 5. Mechanical data** ||**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**| |---|---|---|---|---|---|---| |**Ref.**|**mm**|||**Inches(1)**||| ||**Min.**|**Typ.**|**Max.**|**Min.**|**Typ.**|**Max.**| |A|4.40||4.60|0.1732||0.1811| |B|1.45||1.55|0.0571||0.0610| |C|14.35||15.60|0.5650||0.6142| |D|0.50||0.70|0.0197||0.0276| |E|2.70||2.90|0.1063||0.1142| |F|15.80||16.50|0.6220||0.6496| |G|20.40||21.10|0.8031||0.8307| |H|15.10||15.50|0.5945||0.6102| |J|5.40||5.65|0.2126||0.2224| |K|3.40||3.65|0.1339||0.1437| |L|4.08||4.17|0.1606||0.1642| |P|1.20||1.40|0.0472||0.0551| |R||4.60|||0.1811|| _1. Inches given for reference only_ **DS13731** - **Rev 1** **page 8/11** **TN8050H-12PI Ordering information** **4** ## **Ordering information** **Figure 15. Ordering information scheme** TN 80 50 H - 12 PI Standard SCR series TN = SCR RMS current 80 = 80 A Gate current 50 = 50 mA Junction temperature H = 150 °C Voltage 12 = 1200 V Package PI = TOP3 isolated **Table 6. Ordering information** |**Order code**|**Marking**|**Package**|**Weight**|**Base qty.**|**Delivery mode**| |---|---|---|---|---|---| |TN8050H-12PI|TN8050H12|TOP3 insulated|4.48 g|30|Tube| **DS13731** - **Rev 1** **page 9/11** **TN8050H-12PI** ## **Revision history** ## **Table 7. Document revision history** |**Date**|**Revision**|**Changes**| |---|---|---| |14-Apr-2023|1|Initial release.| **DS13731** - **Rev 1** **page 10/11** **TN8050H-12PI** ## **IMPORTANT NOTICE – READ CAREFULLY** STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgment. 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