# Thyristor, 1.2 kV, 50 mA, 38 A, 60 A, TOP-3, 3 Pins

![Product image](https://novapart.co/image/farnell:4036236/)

**URL**: https://novapart.co/products/TN6050-12PI/thyristor-12-kv-50-ma-38-a-60-top-3-pins
**SKU**: TN6050-12PI
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || Thyristors || Thyristors - SCRs
**Price**: €2.0600
**Stock**: 500+
**Lead Time**: 373 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Thyristor Mounting | Through Hole |
| Holding Current Max | 100mA |
| On State Rms Current | 60A |
| Thyristor Case Style | TOP-3 |
| Average On State Current | 38A |
| Gate Trigger Current Max | 50mA |
| Gate Trigger Voltage Max | 1.3V |
| Operating Temperature Max | 125°C |
| Peak Non Repetitive Surge Current | 763A |
| Peak Repetitive Off State Voltage | 1.2kV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4036236/)

**TN6050-12PI** 

Datasheet 

60 A, 1200 V standard SCR 

**==> picture [70 x 149] intentionally omitted <==**

**----- Start of picture text -----**<br>
A<br>G<br>x<br>K<br>K<br>A<br>G<br>TOP3 Isolated<br>**----- End of picture text -----**<br>


## **Features** 

- Max. Repetitive Blocking Voltage = VDRM, VRRM = 1200 V 

- IGT maximum = 50 mA 

- High static and dynamic commutation: 

   - dI/dt = 100 A/µs 

   - dV/dt = 2000 V/µs 

- ECOPACK[®] 2 component (RoHS and HF compliance) 

- Complies with UL 1557 standard (File ref : E81734) 

## **Applications** 

- Solar / Wind renewable energy inverters and rectifiers 

- Solid state relay (SSR) 

- Uninterruptible power supply (UPS) 

- Industrial SMPS 

- Bypass 

- AC DC inrush current limiter (ICL) 

- Battery charger 

- AC DC voltage controlled rectifier 

- Industrial welding systems 

- Off board automotive battery charger 

## **Product status** ~~ea~~ TN6050-12PI 

|**Product summary**<br>~~ea~~|**Product summary**<br>~~ea~~|
|---|---|
|**Order code**|TN6050-12PI|
|**Package**|TOP3 isolated|
|**IT(RMS)**|60 A|
|**VDRM/VRRM**|1200 V|
|**IGT**|50 mA|



- Soft starter 

- Heating systems 

## **Description** 

The TN6050-12PI SCR is suitable in industrial applications where high immunity is required with a lower gate current and ceramic isolated tab, UL1557 certified rated at 2.5 kV RMS and UL94-V0 resin compliance. 

Available in through-hole high power package TOP3 isolated tab. 

**DS12874** - **Rev 1** - **December 2018** For further information contact your local STMicroelectronics sales office. 

www.st.com 

**TN6050-12PI Characteristics** 

**1** 

## **Characteristics** 

**Table 1. Absolute maximum ratings (limiting values)** 

|**Symbol**|**Parameter**|**Parameter**||**Value**|**Unit**|
|---|---|---|---|---|---|
|IT(RMS)|On-state RMS current (180 ° conduction angle)||Tc= 82.2 °C|60|A|
|IT(AV)|Average on-state current (180 ° conduction angle)|||38||
|ITSM|Non repetitive surge peak on-state current ( Tjinitial = 25 °C)||tp= 8.3 ms|763|A|
||||tp= 10 ms|700||
|I2t|I2t value for fusing||tp= 10 ms|2450|A2s|
|dl/dt|Critical rate of rise of on-state current<br>IG= 100 mA, dIg/dt = 1 A/µs||Tj= 25 °C|100|A/µs|
|IGM|Maximum peak positive gate current|tp= 20 µs|Tj= 125 °C|8|A|
|VGM|Maximum peak positive gate voltage|||5|V|
|PG(AV)|Average gate power dissipation||Tj= 125 °C|1|W|
|VRGM|Maximum peak reverse gate voltage|||3.5|V|
|Tstg|Storage junction temperature range|||-40 to +150|°C|
|Tj|Operating junction temperature range|||-40 to +125||



**Table 2. Electrical characteristics (Tj = 25 °C unless otherwise specified)** 

|**Symbol**|**Test conditions**|**Test conditions**||**Value**|**Unit**|
|---|---|---|---|---|---|
|IGT|VD= 12 V, RL= 33 Ω||Min.|8|mA|
||||Max.|50||
|VGT|||Max.|1.3|V|
|VGD|VD= VDRM, RL= 3.3 kΩ|Tj= 125 °C|Min.|0.2|V|
|IH|IT= 500 mA, gate open||Max.|100|mA|
|IL|IG= 1.2 x IGT||Max.|130|mA|
|dV/dt|VD= 67% VDRM, gate open|Tj= 125 °C|Min.|2000|V/µs|
|tgt|IT= 50 A, VD= VDRM, IG= 200 mA, (dIG/dt) max = 0.2 A/µs||Typ.|2|µs|
|tq|ITM= 50 A, VD= 800 V, dlTM/dt = 30 A/µs, VR= 75 V, dVD/dt = 20 V/µs|Tj= 125 °C|Typ.|100|µs|



**Table 3. Static characteristics** 

|**Symbol**|**Test conditions**|**Test conditions**|**Test conditions**|**Value**|**Unit**|
|---|---|---|---|---|---|
|VTM|ITM= 120 A, tp= 380 µs|Tj= 25 °C|Max.|1.75|V|
|VTO|Threshold voltage|Tj= 125 °C|Max.|0.93||
|RD|Dynamic resistance|Tj= 125 °C|Max.|7.1|mΩ|
|IDRM, IRRM|VDRM= VRRM= 1200 V|Tj= 25 °C|Max.|10|µA|
|||Tj= 125 °C||6.5|mA|



**DS12874** - **Rev 1** 

**page 2/11** 

**TN6050-12PI Characteristics** 

**Table 4. Thermal parameters** 

|**Symbol**|**Parameter**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|---|
|Rth(j-c)|Junction to case (DC)|Typ.|0.70|°C/W|
|Rth(j-a)|Junction to ambient (DC)||50||



**DS12874** - **Rev 1** 

**page 3/11** 

**TN6050-12PI Characteristics (curves)** 

## **1.1 Characteristics curves** 

**==> picture [513 x 182] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 1. Maximum average power dissipation versus Figure 2. Average and DC on-state current versus case<br>average on-state current temperature<br>P(W)  IT(AV)(A)<br>65 65<br>α = 180 ° DC<br>60 60<br>55 α = 120 °  DC 55<br>α = 90 °<br>50 50<br>45 α = 60 ° 45<br>40 α = 30 ° 40 α = 180  °<br>35 35 α = 120 °<br>30 30 α = 90 °<br>25 25 α = 60 °<br>20<br>20 α = 30 °<br>15<br>15 360 °<br>10<br>10<br>5 α  IT (AV) (A) 50 T c (°C)<br>0<br>0 5 10 15 20 25 30 35 40 45 50 0 25 50 75 100 125<br>**----- End of picture text -----**<br>


**==> picture [513 x 383] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 4. Average and D.C. on-state current versus<br>Figure 3. On-state characteristics (maximum values)<br>ambient temperature<br>1000 ITM(A) IT(AV)(A)<br>3.0<br>2.5<br> DC<br>100<br>2.0<br>α = 180 °<br>Tj max: 1.5<br>Vt0 = 0.93 V<br>Rd = 7.1 mΩ<br>10<br>1.0<br> Tj = 125  ° C  Tj = 25  ° C V TM (V) 0.5<br>1 0.0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5<br>0 25 50 75 100 125<br>Figure 5. Relative variation of thermal impedance junction Figure 6. Surge peak on-state current versus number of<br>to case and junction to ambient versus pulse duration cycles<br>1.0E+00 K = [Zth/ Rth] 750 ITSM(A)<br> Zth(j-c) Zth(j-a) 700650600550500 Non repetitive T j  = 25 °C tp=10ms  One cycle<br>450<br>400<br>1.0E-01<br>350<br>300<br>250200 Repetitive T c = 82.2 °C<br>150<br>tP(s) 10050 Number of cycles<br>1.0E-02 0<br>1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 1 10 100 1000<br>**----- End of picture text -----**<br>


**DS12874** - **Rev 1** 

**page 4/11** 

**TN6050-12PI Characteristics (curves)** 

**Figure 8. Relative variation of gate trigger current and Figure 7. Non repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms gate trigger voltage versus junction temperature (typicalvalue)** 

**==> picture [475 x 148] intentionally omitted <==**

**----- Start of picture text -----**<br>
ITSM(A)<br>10000 dl/dt limitation: 100 A/µs  Tj initial = 25 °C 1.8 IGT, VGT [ Tj ] / IGT, VGT [ Tj = 25 °C]<br>1.5  I GT<br>ITSM<br>1000 1.3<br>1.0  V GT<br>0.8<br>100<br>0.5<br>t (ms) 0.3<br>p<br>10 Tj(°C)<br>0.01 0.10 1.00 10.00 0.0<br>-40 -20 0 20 40 60 80 100 120<br>**----- End of picture text -----**<br>


**==> picture [513 x 182] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 9. Relative variation of holding and latching Figure 10. Relative variation of static dV/dt immunity<br>current versus junction temperature (typical value) versus junction temperature<br>IH, IL [ Tj ] / IH, IL [ Tj = 25 °C] dV/dt [T j] / dV/dt [T j=125 °C]<br>1.8 6<br>VD=VR=800 V<br>1.5  IH 5<br>1.3<br>4<br> IL<br>1.0<br>3<br>0.8<br>2<br>0.5<br>1<br>0.3 T j (°C) Tj(°C)<br>0.0 0<br>-40 -20 0 20 40 60 80 100 120 25 50 75 100 125<br>**----- End of picture text -----**<br>


**Figure 11. Relative variation of leakage current versus junction temperature for different values of blocking voltage (typical values)** 

**==> picture [268 x 177] intentionally omitted <==**

**----- Start of picture text -----**<br>
IDRM, IRRM [ Tj ;VDRM , VRRM] / IDRM / IRRM<br>1.0E+00<br>VDRM=VRRM=1000 V<br>1.0E-01 VDRM=VRRM=1200 V<br>1.0E-02 VDRM=VRRM=600 V<br>1.0E-03<br>Tj(°C)<br>1.0E-04<br>25 50 75 100 125<br>**----- End of picture text -----**<br>


**DS12874** - **Rev 1** 

**page 5/11** 

**TN6050-12PI Package information** 

**2 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK[®] is an ST trademark. 

## **2.1 TOP3 Isolated package information** 

- ECOPACK® (Lead-free plating and Halogen free package compliance) 

- Lead-free package leads finishing 

- Halogen-free molding compound resin meets UL94 standard level V0 

- Recommended torque: 1.05 N·m (max. torque: 1.2 N·m) 

**DS12874** - **Rev 1** 

**page 6/11** 

**TN6050-12PI TOP3 Isolated package information** 

**Figure 12. TOP3 Isolated package outline** 

**==> picture [415 x 494] intentionally omitted <==**

**DS12874** - **Rev 1** 

**page 7/11** 

**TN6050-12PI TOP3 Isolated package information** 

**Table 5. TOP3 Isolated mechanical data** 

||**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|
|---|---|---|---|---|---|---|
|**Ref.**|**mm**|||**Inches(1)**|||
||**Min.**|**Typ.**|**Max.**|**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|0.1732||0.1811|
|B|1.45||1.55|0.0571||0.0610|
|C|14.35||15.60|0.5650||0.6142|
|D|0.50||0.70|0.0197||0.0276|
|E|2.70||2.90|0.1063||0.1142|
|F|15.80||16.50|0.6220||0.6496|
|G|20.40||21.10|0.8031||0.8307|
|H|15.10||15.50|0.5945||0.6102|
|J|5.40||5.65|0.2126||0.2224|
|K|3.40||3.65|0.1339||0.1437|
|L|4.08||4.17|0.1606||0.1642|
|M|1.20||1.40|0.0472||0.0551|
|R||4.60|||0.1811||



_1. Inches given for reference only_ 

**DS12874** - **Rev 1** 

**page 8/11** 

**TN6050-12PI Ordering information** 

**3 Ordering information** 

**Figure 13. Ordering information scheme** 

TN   60  50    -    12     PI Series TN = SCR RMS current 60 = 60 A Gate current 50 = 50 mA Voltage 12 = 1200 V Package PI = TOP3 Isolated 

**Table 6. Ordering information** 

|**Order code**|**Marking**|**Package**|**Weight**|**Base qty.**|**Delivery mode**|
|---|---|---|---|---|---|
|TN6050-12PI|TN605012PI|TOP3 Isolated|4.48 g|30|Tube|



**DS12874** - **Rev 1** 

**page 9/11** 

**TN6050-12PI** 

## **Revision history** 

## **Table 7. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|14-Dec-2018|1|Initial release.|



**DS12874** - **Rev 1** 

**page 10/11** 

**TN6050-12PI** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2018 STMicroelectronics – All rights reserved 

**DS12874** - **Rev 1** 

**page 11/11** 



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