# Power MOSFET, DMOS, N Channel, 350 V, 110 mA, 15 ohm, TO-236AB, Surface Mount

![Product image](https://novapart.co/image/farnell:2920707/)

**URL**: https://novapart.co/products/TN5335K1-G/power-mosfet-dmos-n-channel-350-v-110-ma-15-ohm-to
**SKU**: TN5335K1-G
**Manufacturer**: MICROCHIP
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.5290
**Stock**: 1000+
**Lead Time**: 36 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:110mA; Drain Source Voltage Vds:350V; On Resistance Rds(on):15ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V;

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (04-Feb-2026) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 360mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-236AB |
| Drain Source Voltage Vds | 350V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 110mA |
| Drain Source On State Resistance | 15ohm |
| Gate Source Threshold Voltage Max | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2920707/)

_**Su ertex inc. p**_ 

**TN5335** 

## **N-Channel Enhancement-Mode Vertical DMOS FET** 

## **Features** 

- Low threshold 

- High input impedance 

- Low input capacitance 

- Fast switching speeds 

- Low on-resistance 

- Free from secondary breakdown 

- Low input and output leakage 

- Complementary N- and P-channel devices 

## **Applications** 

- Logic level interfaces - ideal for TTL and CMOS 

- Solid state relays 

- Battery operated systems 

- Photo voltaic drives 

- Analog switches 

## **General Description** 

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. 

Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. 

- General purpose line drivers 

- Telecom switches 

**Ordering Information Product Summary Part Number Package Option Packing BV /BV RDS(ON) ID(ON) VGS(th) DSS DGS (max) (min) (max)** TN5335K1-G TO-236AB (SOT-23) 3000/Reel ~~eS~~ TN5335N8-G TO-243AA (SOT-89) 2000/Reel 350V 15Ω 750mA 2.0V _-G denotes a lead (Pb)-free / RoHS compliant package. Contact factory for Wafer / Die availablity. Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant._ **Pin Configuration DRAIN DRAIN Absolute Maximum Ratings Parameter Value SOURCE** Drain-to-source voltage BVDSS **SOURCE GATE DRAIN** Drain-to-gate voltage BVDGS **GATE** Gate-to-source voltage ±20V **TO-236AB (SOT-23) TO-243AA (SOT-89)** ~~——~~ Operating and storage temperature -55[O] C to +150[O] ~~=~~ C " _Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous_ **Product Marking** _operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground._ **N3SW** W = Code for week sealed = “Green” Packaging « **Typical Thermal Resistance** _Package may or may not include the following marks: Si or_ **TO-236AB (SOT-23) Package** _**θja**_ W = Code for week sealed TO-236AB (SOT-23) 203[O] C/W **TN3SW** = “Green” Packaging TO-243AA (SOT-89) 173[O] C/W ~~—~~ _Package may or may not include the following marks: Si or_ ~~_~~ **TO-243AA (SOT-89)** _Doc.# DSFP-TN5335_ _**Supertex inc.** B081213_ 

_**Supertex inc. www.supertex.com**_ 

**TN5335** 

## **Thermal Characteristics** 

|**Package**|**ID**<br>**(continuous)****_†_**|**ID**<br>**(pulsed)**|**Power Dissipation**<br>**@TA = 25OC**|**IDR**<br>**_†_**|**IDRM**|
|---|---|---|---|---|---|
|TO-236AB (SOT-23)|110mA|0.8A|0.36W|110mA|0.8A|
|TO-243AA (SOT-89)|230mA|1.3A|1.6W_‡_|230mA|1.3A|



_**Notes:**_ 

- _ID (continuous) is limited by max rated Tj ._ 

- _Mounted on FR5 Board, 25mm x 25mm x 1.57mm._ 

## **Electrical Characteristics** _(TA = 25[O] C unless otherwise specified)_ 

**==> picture [542 x 447] intentionally omitted <==**

**----- Start of picture text -----**<br>
Sym Parameter Min Typ Max Units Conditions<br>BVDSS Drain-to-source breakdown voltage 350 - - V VGS = 0V, ID = 100µA<br>VGS(th) Gate threshold voltage 0.6 - 2.0 V VGS = VDS, ID= 1.0mA<br>ΔVGS(th) Change in VGS(th) with temperature - - -4.5 mV/ [O] C VGS = VDS, ID= 1.0mA<br>IGSS Gate body leakage - - 100 nA VGS = ± 20V, VDS = 0V<br>- - 1.0 µA VGS = 0V, VDS = 100V<br>IDSS Zero gate voltage drain current - - 10 VGS = 0V, VDS = Max Rating<br>- - 1.0 mA VDS = 0.8 Max Rating,<br>VGS = 0V, TA = 125°C<br>I On-state drain current 300 - - mA VGS = 4.5V, VDS = 25V<br>D(ON) 750 - - VGS = 10V, VDS = 25V<br>- - 15 VGS = 3.0V, ID = 20mA<br>RDS(ON) Static drain-to-source on-state resistance - - 15 Ω VGS = 4.5V, ID = 150mA<br>- - 15 VGS = 10V, ID = 200mA<br>ΔRDS(ON) Change in RDS(ON) with temperature - - 1.0 %/ [O] C VGS = 4.5V, ID = 150mA<br>GFS Forward transductance 125 - - mmho  VDS = 25V, ID = 200mA<br>CISS Input capacitance - - 110 VGS = 0V,<br>COSS Common source output capacitance - - 60 pF VDS = 25V,<br>f = 1.0MHz<br>CRSS Reverse transfer capacitance - - 22<br>td(ON) Turn-on delay time  - - 20<br>tr Rise time - - 15 ns IVDDD = 150mA, = 25V,<br>td(OFF) Turn-off delay time - - 25 RGEN = 25Ω<br>t Fall time - - 25<br>f<br>VSD Diode forward voltage drop - - 1.8 V VGS = 0V, ISD = 200mA<br>trr Reverse recovery time - 800 - ns VGS = 0V, ISD = 200mA<br>**----- End of picture text -----**<br>


_**Notes:**_ 

_1. All D.C. parameters 100% tested at 25[O] C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)_ 

_2. All A.C. parameters sample tested._ 

_**Supertex inc. www.supertex.com**_ 

_Doc.# DSFP-TN5335 B081213_ 

2 

**TN5335** 

## **Switching Waveforms and Test Circuit** 

**==> picture [500 x 129] intentionally omitted <==**

**----- Start of picture text -----**<br>
10V 90%  VDD<br>INPUT Pulse R<br>10% Generator L<br>0V OUTPUT<br>t t<br>(ON)  (OFF)  R<br>GEN<br>td(ON)  tr  td(OFF) tf<br>VDD INPUT D.U.T.<br>10%  10%<br>OUTPUT<br>0V 90%  90%<br>**----- End of picture text -----**<br>


_**Supertex inc. www.supertex.com**_ 

_Doc.# DSFP-TN5335 B081213_ 

3 

**TN5335** 

## **3-Lead TO-236AB (SOT-23) Package Outline (K1)** 

## _**2.90x1.30mm body, 1.12mm height (max), 1.90mm pitch**_ 

**==> picture [478 x 343] intentionally omitted <==**

**----- Start of picture text -----**<br>
D<br>3<br>E1 E<br>Gauge<br>0.25<br>Plane<br>1 2 L Seating<br>Plane<br>e b L1<br>e1<br>Top View View B<br>View B<br>A<br>A2<br>A<br>Seating<br>Plane<br>A1<br>Side View  A View A - A<br>**----- End of picture text -----**<br>


**==> picture [541 x 63] intentionally omitted <==**

**----- Start of picture text -----**<br>
Symbol A A1 A2 b D E E1 e e1 L L1 θ<br>MIN 0.89 0.01 0.88 0.30 2.80 2.10 1.20 0.20 [†] 0 [O]<br>Dimension 0.95 1.90 0.54<br>NOM - - 0.95 - 2.90 - 1.30 0.50 -<br>(mm) BSC BSC REF<br>MAX 1.12 0.10 1.02 0.50 3.04 2.64 1.40 0.60 8 [O]<br>**----- End of picture text -----**<br>


_JEDEC Registration TO-236, Variation AB, Issue H, Jan. 1999. † This dimension differs from the JEDEC drawing._ 

## _**Drawings not to scale.**_ 

_**Supertex Doc.#:** DSPD-3TO236ABK1, Version C041309._ 

_**Supertex inc.**_ 

_Doc.# DSFP-TN5335 B081213_ 

_**www.supertex.com**_ 

4 

**TN5335** 

## **3-Lead TO-243AA (SOT-89) Package Outline (N8)** 

**==> picture [217 x 195] intentionally omitted <==**

**----- Start of picture text -----**<br>
D<br>D1<br>E H<br>1  2  3<br>L<br>b  b1<br>e<br>e1<br>**----- End of picture text -----**<br>


**==> picture [85 x 162] intentionally omitted <==**

**----- Start of picture text -----**<br>
C<br>E1<br>A<br>**----- End of picture text -----**<br>


## **Top View** 

## **Side View** 

**==> picture [542 x 73] intentionally omitted <==**

**----- Start of picture text -----**<br>
Symbol A b b1 C D D1 E E1 e e1 H L<br>MIN 1.40 0.44 0.36 0.35 4.40 1.62 2.29 2.00 [†] 3.94 0.73 [†]<br>Dimensions 1.50 3.00<br>NOM - - - - - - - - - -<br>(mm) BSC BSC<br>MAX 1.60 0.56 0.48 0.44 4.60 1.83 2.60 2.29 4.25 1.20<br>**----- End of picture text -----**<br>


_JEDEC Registration TO-243, Variation AA, Issue C, July 1986. † This dimension differs from the JEDEC drawing_ _**Drawings not to scale** ._ 

_**Supertex Doc. #:** DSPD-3TO243AAN8, Version F111010._ 

_(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.)_ 

_**Supertex inc.**_ does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” _**Supertex inc.**_ does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the _**Supertex inc.**_ (website: http//www.supertex.com) 

©2013 _**Supertex inc.**_ All rights reserved. Unauthorized use or reproduction is prohibited. 

_**Supertex inc.**_ 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 _**www.supertex.com**_ 

_Doc.# DSFP-TN5335 B081213_ 

5 



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