# Thyristor, 600 V, 15 mA, 30 A, 50 A, TO-220AB, 3 Pins

![Product image](https://novapart.co/image/farnell:2778115/)

**URL**: https://novapart.co/products/TN5015H-6T/thyristor-600-v-15-ma-30-a-50-to-220ab-3-pins
**SKU**: TN5015H-6T
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || Thyristors || Thyristors - SCRs
**Price**: €0.7010
**Stock**: 25+
**Lead Time**: 120 days (indicative)

## Description

Peak Repetitive Off-State Voltage, Vdrm:600V; Gate Trigger Current Max, Igt:15mA; Current It av:30A; On State RMS Current IT(rms):50A; Thyristor Case Style:TO-220AB; No. of Pins:3Pins; Pea

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Thyristor Mounting | Through Hole |
| Holding Current Max | 60mA |
| On State Rms Current | 50A |
| Thyristor Case Style | TO-220AB |
| Average On State Current | 30A |
| Gate Trigger Current Max | 15mA |
| Gate Trigger Voltage Max | 1.3V |
| Operating Temperature Max | 150°C |
| Peak Non Repetitive Surge Current | 493A |
| Peak Repetitive Off State Voltage | 600V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2778115/)

## **TN5015H-6T** 

## High temperature 50 A SCRs 

Datasheet - production data 

**==> picture [91 x 136] intentionally omitted <==**

**----- Start of picture text -----**<br>
A<br>G<br>K<br>> A<br>K<br>A TO-220AB<br>G<br>**----- End of picture text -----**<br>


## **Description** 

Packaged in a non-isolated TO-220AB, this device offers high thermal performance during operation of up to 50 A, thanks to a junction temperature of up to 150 °C. 

Its noise immunity (dV/dt = 500 V/μs) trade-off versus gate triggering current (IGT = 15 mA) and its turn-on current rise (dI/dt = 100 A/μs) allow the design of robust and compact control circuits for voltage regulators in motorbikes and industrial drives, overvoltage crowbar protection, motor control circuits in power tools and kitchen appliances, and inrush current-limiting circuits. 

## **Features** 

- High junction temperature: Tj = 150 °C 

- High noise immunity up to 150 °C 

- Gate triggering current IGT = 15 mA 

- Peak off-state voltage VDRM/VRRM = 600 V 

**Table 1: Device summary Order code Package VDRM/VRRM IGT** TN5015H-6T TO-220AB 600 V 15 mA ~~a~~ 

- High turn-on current rise dI/dt = 100 A/µs 

- ECOPACK[®] 2 compliant component 

## **Applications** 

- Motorbike voltage regulator circuits 

- Inrush current limiting circuits 

- Motor control circuits and starters 

- Solid state relays 

June 2017 

DocID030698 Rev 1 

1/9 

This is information on a product in full production. 

_www.st.com_ 

**Characteristics** 

**TN5015H-6T** 

## **1 Characteristics** 

**Table 2: Absolute maximum ratings (limiting values), Tj = 25 °C unless otherwise specified** 

|**Symbol**|**Parameter**|**Parameter**||**Value**|**Unit**|
|---|---|---|---|---|---|
|IT(RMS)|RMS on-state current<br>(180 ° conduction angle)||Tc= 120 °C|50|A|
|IT(AV)|Average on-state current<br>(180 ° conduction angle)||Tc= 122 °C|30|A|
||||Tc= 128 °C|25||
||||Tc= 134 °C|20||
|ITSM|Non repetitive surge peak on-state current<br>( Tjinitial = 25 °C)||tp= 8.3 ms|493|A|
||||tp= 10 ms|450||
|I2t|I2t value for fusing||tp= 10 ms|1012|A2s|
|dl/dt|Critical rate of rise of on-state current<br>IG= 2 x IGT, tr ≤ 100 ns||f = 60 Hz|100|A/µs|
|VDRM/VRRM|Repetitivepeak off-state voltage||Tj= 150 °C|600|V|
|VDSM/VRSM|Non repetitive surge peak off-state voltage||tp= 10 ms|VDRM/VRRM+<br>100|V|
|IGM|Peakgate current|tp= 20µs|Tj= 150 °C|4|A|
|PG(AV)|Averagegatepower dissipation||Tj= 150 °C|1|W|
|VRGM|Maximumpeak reversegate voltage|||5|V|
|Tstg|Storagejunction temperature range|||-40 to +150|°C|
|Tj|Maximum operating junction temperature|||-40 to +150|°C|
|Tl|Maximum lead temperature solderingduring10 s|||260|°C|



**Table 3: Electrical characteristics (Tj = 25 °C unless otherwise specified)** 

|**Symbol**|**Test conditions**|**Test conditions**||**Value**|**Unit**|
|---|---|---|---|---|---|
|IGT|VD= 12 V, RL= 33 Ω||Max.|15|mA|
|VGT|||Max.|1.3|V|
|VGD|VD= VDRM, RL= 3.3 kΩ|Tj= 150 °C|Min.|0.15|V|
|IH|IT= 500 mA,gate open||Max.|60|mA|
|IL|IG= 1.2 x IGT||Max.|80|mA|
|dV/dt|VD= 402 V,gate open|Tj= 150 °C|Min.|500|V/µs|
|tgt|ITM= 100 A, VD= 402 V, IG= 30 mA, (dIG/dt) max = 0.2 A/µs||Typ.|1.9|µs|
|tq|ITM= 100 A, VD= 402 V, (dI/dt)off = 30<br>A/µs, VR= 25 V, dVD/dt = 50 V/µs|Tj= 150 °C|Typ.|85|µs|



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**Characteristics** 

**TN5015H-6T** 

||**Table 4: Static characteristics**|**Table 4: Static characteristics**||||
|---|---|---|---|---|---|
|**Symbol**|**Test conditions**|||**Value**|**Unit**|
|VTM|ITM= 100 A, tp= 380µs|Tj= 25 °C|Max.|1.65|V|
|VTO|Threshold voltage|Tj= 150 °C|Max.|0.85||
|RD|Dynamic resistance|Tj= 150 °C|Max.|9|mΩ|
|IDRM, IRRM|VD= VDRM= VRRM|Tj= 25 °C|Max.|10|µA|
|||Tj= 150 °C||6|mA|



## **Table 5: Thermal parameters** 

|**Symbol**|**Parameter**||**Value**|**Unit**|
|---|---|---|---|---|
|Rth(j-c)|Junction to case (DC)|Max.|0.6|°C/W|
|Rth(j-a)|Junction to ambient (DC)|Typ.|60||



DocID030698 Rev 1 

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**Characteristics** 

**TN5015H-6T** 

## **1.1 Characteristics (curves)** 

**Figure 1: Maximum average power dissipation versus average on-state current** 

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**----- Start of picture text -----**<br>
versus average on-state current Figure 2: Average and DC on-state current versus<br>case temperature<br>P(W) IT(AV)(A)<br>50<br>TT α = 90°α = 120° VAT) α = 180° D.C | 60  FF α = 30° α = 60° α = 90° α = 120° α = 180° D.C —<br>40 POO α = 60° JAA | 50 oe} 44<br>α = 30 °<br>an pfV/f ix iil ee<br>30 40<br>A VA) | ea<br>PCVAe | 30 EEEFFE<br>20<br>COA |) SSS EEF<br>aa 20 NN<br>10<br>10<br>I T(AV) (A) T C (°C)<br>0 SHAo, tei4s 0 ==!SEE ESS EEE SN©<br>0 5 10 15 20 25 30 35 40 45 50 0 25 50 75 100 125 150<br>Figure 4: Relative variation of thermal impedance<br>Figure 3: Average and D.C. on state current versus<br>versus pulse duration<br>ambient temperature<br>3.0 IT(AV)(A) K=[Z th /Rth]<br>1.0E+00<br>2.5 D.C Zth(j-c)<br>Zth(j-a)<br>2.0 α = 180 ° 1.0E-01<br>SASREEP PE) Eo<br>1.5<br>-t+++ + AEE Seine tiiamett auntamet<br>1.0 ee 1.0E-02 III ETI AAI TTT<br>0.5<br>tp(s)<br>0.0 ON T A (°C) 1.0E-03 SicSeite iiamettmettlCTTamet<br>1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03<br>0 25 50 75 100 125 150<br>Figure 5: Relative variation of gate trigger current  Figure 6: Relative variation of holding and latching<br>and gate voltage versus junction temperature  current versus junction temperature<br>(typical values)  (typical values)<br>IGT,VGT [T j] / IGT,VGT [T j=25 °C] IH , IL[T j]/ IH , IL[T j=25 °C]<br>2.5 Tepper 2.52.3<br>IGT<br>2.0 ee | 2.0 Ee IH Pt tt tT<br>PNET} 1.8 ENwf tt<br>1.5 PREPPN |  ERE 1.51.3 TP<br>1.0 VGT 1.0 I L<br>—a See | 0.8 EasPENee<br>0.5 a Ree 0.5 OS Se<br>Tj(°C) 0.3 T j (°C)<br>0.0 ee ee ee eee Poy} 0.0 Let ft |tf<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>**----- End of picture text -----**<br>


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**Characteristics** 

**TN5015H-6T** 

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**----- Start of picture text -----**<br>
Figure 7: Relative variation of static dV/dt<br>Figure 8: Surge peak on-state current versus<br>immunity versus junction temperature<br>number of cycles<br>(typical values)<br>12 dV/dt [ Tj ] / dV/dt [ Tj = 150 °C ] ITSM(A)<br>11 VD = 402 V 500<br>10 pf if fo ff ft fof ft eel<br>9 Above test equipment capability 400 eeeeEo =<br>8 PHATE - l|<br>Non repetitive<br>7 po f| | | f ftINEAE TrPt 300 aeeeeet l Tj initial = 25 °C LET]ll[neato ||<br>6<br>5 Eee eal: PEA EE<br>4 a ~ 200 PCI NT<br>Repetitive<br>3 a ee ee Tc = 120  ° C peel<br>2 a a 100 nae all<br>1 ee PEPr<br>0 Number of cycles<br>90 Fj 95 100 j 105 | 110 fjee 115 120 f 125 fjee 130 135 fj 140 jtee 145 150 0 e ee ell aHl<br>Tj(°C) 1 10 100 1000<br>**----- End of picture text -----**<br>


**Figure 9: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms** 

**Figure 10: On-state characteristics (maximum values)** 

**==> picture [327 x 174] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 11: Relative variation of leakage current versus junction temperature<br>IDRM , IRRM [Tj; VDRM , VRRM ] / IDRM , IRRM [150 °C; 600 V]<br>1.0E+00<br>V DRM = V RRM = 600 V<br>1.0E-01 ==ammilia=a=a ee ee ee<br>1.0E-02 aee Geeee eeeA eee<br>—————SC—OSS CC<br>1.0E-03<br>SS<br>ak SS<br>1.0E-04 er |a| |CC| |<br>ee<br>1.0E-05 Ge<br>25 50 75 100 125 150<br>Tj(°C)<br>**----- End of picture text -----**<br>


DocID030698 Rev 1 

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**Package** information 

**TN5015H-6T** 

## **2 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _**www.st.com**_ . ECOPACK[®] is an ST trademark. 

- Epoxy meets UL94, V0 

- Lead-free, halogen-free package 

## **2.1 TO-220AB package information** 

**Figure 12: TO-220AB (NIns. & Ins.) package outline** 

**==> picture [407 x 417] intentionally omitted <==**

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**Package** information 

**TN5015H-6T** 

**Table 6: TO-220AB (NIns. & Ins.) package mechanical data** 

|**Ref.**|||**Dimensions**|**Dimensions**|||
|---|---|---|---|---|---|---|
|||**Millimeters**|||**Inches****_(1)_**||
||**Min.**|**Typ.**|**Max.**|**Min.**|**Typ.**|**Max.**|
|A|15.20||15.90|0.5984||0.6260|
|a1||3.75|||0.1476||
|a2|13.00||14.00|0.5118||0.5512|
|B|10.00||10.40|0.3937||0.4094|
|b1|0.61||0.88|0.0240||0.0346|
|b2|1.23||1.32|0.0484||0.0520|
|C|4.40||4.60|0.1732||0.1811|
|c1|0.49||0.70|0.0193||0.0276|
|c2|2.40||2.72|0.0945||0.1071|
|e|2.40||2.70|0.0945||0.1063|
|F|6.20||6.60|0.2441||0.2598|
|I|3.73||3.88|0.1469||0.1528|
|L|2.65||2.95|0.1043||0.1161|
|I2|1.14||1.70|0.0449||0.0669|
|I3|1.14||1.70|0.0449||0.0669|
|I4|15.80|16.40|16.80|0.6220|0.6457|0.6614|
|M||2.6|||0.1024||



## **Notes:** 

(1)Inch dimensions are for reference only. 

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**Ordering** information 

**TN5015H-6T** 

## **3 Ordering information** 

**Figure 13: Ordering information scheme** 

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**----- Start of picture text -----**<br>
TN 50 15 H - 6 T<br>Series<br>TN = SCR<br>Current<br>50 = 50 A<br>Gate sensitivity<br>15= 15 m A<br>High temperature<br>H = 150 °C<br>Voltage<br>6 = 600 V<br>Package<br>T = TO-220AB<br>Packing mode<br>Blank = tube<br>**----- End of picture text -----**<br>


**==> picture [416 x 45] intentionally omitted <==**

**----- Start of picture text -----**<br>
Table 7: Ordering information<br>Order code  Marking  Package  Weight  Base qty.  Delivery mode<br>TN5015H-6T  TN5015H6  TO-220AB  2.3 g 50  Tube<br>**----- End of picture text -----**<br>


## **4 Revision history** 

**Table 8: Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|01-Jun-2017|1|Initial release.|



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**TN5015H-6T** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

- © 2017 STMicroelectronics – All rights reserved 

DocID030698 Rev 1 

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- [Supplier page](https://es.farnell.com/stmicroelectronics/tn5015h-6t/thyristor-50a-600v-to-220ab/dp/2778115)
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