# Thyristor, 600 V, 15 mA, 30 A, 50 A, TO-263 (D2PAK), 3 Pins

![Product image](https://novapart.co/image/farnell:4036235/)

**URL**: https://novapart.co/products/TN5015H-6G/thyristor-600-v-15-ma-30-a-50-to-263-d2pak-3-pins
**SKU**: TN5015H-6G
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || Thyristors || Thyristors - SCRs
**Price**: €0.6830
**Stock**: 500+
**Lead Time**: 120 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Thyristor Mounting | Surface Mount |
| Holding Current Max | 60mA |
| On State Rms Current | 50A |
| Thyristor Case Style | TO-263 (D2PAK) |
| Average On State Current | 30A |
| Gate Trigger Current Max | 15mA |
| Gate Trigger Voltage Max | 1.3V |
| Operating Temperature Max | 150°C |
| Peak Non Repetitive Surge Current | 493A |
| Peak Repetitive Off State Voltage | 600V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4036235/)

## **TN5015H-6G** 

## High temperature 50 A SCRs 

Datasheet - production data 

**==> picture [66 x 140] intentionally omitted <==**

**----- Start of picture text -----**<br>
A<br>G<br>;<br>K<br>A<br>A<br>K<br>9<br>G<br>D²PAK<br>**----- End of picture text -----**<br>


## **Features** 

- High junction temperature: Tj = 150 °C 

- High noise immunity dV/dt = 500 V/µs up to 150 °C 

- Gate triggering current IGT = 15 mA 

## **Description** 

Thanks to its junction temperature Tj up to 150 °C, the device offers high thermal performance operation up to 50 A. Its D²PAK package allows modern SMD designs as well as compact back to back configuration. 

Its trade-off noise immunity (dV/dt = 500 V/μs) versus its gate triggering current (IGT = 15 mA) and its turn-on current rise (dI/dt = 100 A/μs) allow to design robust and compact control circuit for voltage regulator in motorbikes and industrial drives, overvoltage crowbar protection, motor control circuits in power tools and kitchen appliances, inrush current limiting circuits. 

**Table 1: Device summary Order code Package VDRM/VRRM IGT** TN5015H-6G D²PAK 600 V 15 mA ~~So~~ 

- Peak off-state voltage VDRM/VRRM = 600 V 

- High turn-on current rise dI/dt = 100 A/µs 

- ECOPACK[®] 2 compliant component 

## **Applications** 

- Motorbike voltage regulator circuits 

- Inrush current limiting circuits 

- Motor control circuits and starters 

- Solid state relays 

June 2017 

DocID030697 Rev 1 

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This is information on a product in full production. 

_www.st.com_ 

**Characteristics** 

**TN5015H-6G** 

## **1 Characteristics** 

**Table 2: Absolute maximum ratings (limiting values), Tj = 25 °C unless otherwise specified** 

|**Symbol**|**Parameter**|**Parameter**||**Value**|**Unit**|
|---|---|---|---|---|---|
|IT(RMS)|RMS on-state current<br>(180 ° conduction angle)||Tc= 120 °C|50|A|
|IT(AV)|Average on-state current<br>(180 ° conduction angle)||Tc= 122 °C|30|A|
||||Tc= 128 °C|25||
||||Tc= 134 °C|20||
|ITSM|Non repetitive surge peak on-state current||tp= 8.3 ms|493|A|
||||tp= 10 ms|450||
|I2t|I2t value for fusing||tp= 10 ms|1012|A2s|
|dl/dt|Critical rate of rise of on-state current<br>IG= 2 x IGT, tr ≤ 100 ns||f = 60 Hz|100|A/µs|
|VDRM/VRRM|Repetitivepeak off-state voltage||Tj= 150 °C|600|V|
|VDSM/VRSM|Non repetitive surge peak off-state voltage||tp= 10 ms|VDRM/VRRM+<br>100|V|
|IGM|Peakgate current|tp= 20µs|Tj= 150 °C|4|A|
|PG(AV)|Averagegatepower dissipation||Tj= 150 °C|1|W|
|VRGM|Maximumpeak reversegate voltage|||5|V|
|Tstg|Storagejunction temperature range|||-40 to +150|°C|
|Tj|Maximum operating junction temperature|||-40 to +150|°C|



**Table 3: Electrical characteristics (Tj = 25 °C unless otherwise specified)** 

|**Symbol**|**Test conditions**|**Test conditions**||**Value**|**Unit**|
|---|---|---|---|---|---|
|IGT|VD= 12 V, RL= 33 Ω||Max.|15|mA|
|VGT|||Max.|1.3|V|
|VGD|VD= VDRM, RL= 3.3 kΩ|Tj= 150 °C|Min.|0.15|V|
|IH|IT= 500 mA,gate open||Max.|60|mA|
|IL|IG= 1.2 x IGT||Max.|80|mA|
|dV/dt|VD= 402 V,gate open|Tj= 150 °C|Min.|500|V/µs|
|tgt|ITM= 100 A, VD= 600 V, IG= 100 mA, (dIG/dt) max = 0.2 A/µs||Typ.|1.9|µs|
|tq|ITM= 100 A, VD= 402 V,<br>(dI/dt)off = 30 A/µs, VR= 25 V,<br>dVD/dt = 50 V/µs|Tj= 150 °C|Typ.|85|µs|



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**Characteristics** 

||**lTable 4: Static characteristics**|**lTable 4: Static characteristics**||||
|---|---|---|---|---|---|
|**Symbol**|**Test conditions**|||**Value**|**Unit**|
|VTM|ITM= 100 A, tp= 380µs|Tj= 25 °C|Max.|1.65|V|
|VTO|Threshold voltage|Tj= 150 °C|Max.|0.85||
|RD|Dynamic resistance|Tj= 150 °C|Max.|9|mΩ|
|IDRM, IRRM|VD= VDRM= VRRM|Tj= 25 °C|Max.|10|µA|
|||Tj= 150 °C||6|mA|
||**Table 5: Thermalparameters**|||||
|**Symbol**|**Parameter**|||**Value**|**Unit**|
|Rth(j-c)|Junction to case (DC)||Max.|0.6|°C/W|
|Rth(j-a)|Junction to ambient (DC)|S_(1)_= 1 cm²|Typ.|45||



## **Notes:** 

(1)S = Copper surface under tab 

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**Characteristics** 

**TN5015H-6G** 

## **1.1 Characteristics (curves)** 

**Figure 1: Maximum average power dissipation versus average on-state current** 

**==> picture [452 x 558] intentionally omitted <==**

**----- Start of picture text -----**<br>
versus average on-state current  Figure 2: Average and DC on-state current versus<br>case temperature<br>P(W) IT(AV)(A)<br>50<br>α = 90°α = 120° α = 180° D.C 60 α = 30° α = 60° α = 90° α = 120° α = 180° D.C<br>40 Saeene8PCE α = 60° YYZ  TY A 50 a(yp<br>30 LtLtEET α = 30 A ° AYA pV fixee | 40 TIPNee<br>AA) | 30 ee tN<br>20 Reeves s epee ee ee ee Or ee<br>COV | 20 Se SE SESE ESSN<br>10<br>Lie oN 10 [oN SY<br>I T(AV) (A) T C (°C)<br>0 72c 0 E+ + +++++4+7 AY<br>0 5 10 15 20 25 30 35 40 45 50 0 25 50 75 100 125 150<br>Figure 3: Average and D.C. on state current versus  Figure 4: Relative variation of thermal impedance<br>ambient temperature  versus pulse duration<br>IT(AV)(A) K=[Z th /Rth]<br>3.0 1.0E+00<br>2.5 D.C Z th(j-c)<br>Zth(j-a)<br>PRS SER EE AC Co EA<br>2.0 α = 180 ° 1.0E-01<br>RR EEA<br>1.5 a go<br>1.0 1.0E-02<br>PPP PPP PN rr ST<br>0.5<br>ptf if fof fof ft AS SSeeit aseetil set ti settsense<br>T A (°C) tp(s)<br>0.0 ONee ~ 1.0E-03 iiiEUV TT PITT CEI PT<br>0 25 50 75 100 125 150 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03<br>Figure 5: Relative variation of gate trigger current  Figure 6: Relative variation of holding and latching<br>and gate voltage versus junction temperature  current versus junction temperature<br>(typical values)  (typical values)<br>IGT,VGT [T j] / IGT,VGT [T j=25 °C] IH , IL[T j]/ IH , IL[T j=25 °C]<br>2.5 Poy] 2.52.3 |<br>IGT<br>2.0 2.0 IH<br>po, ft dT 1.8 —————<br>PNPEN<br>1.5 PON 1.5 EA<br>PoPNO} 1.3 EEN<br>1.0 VGT 1.0 I L<br>ieee 0.8 ON<br>OES SSR<br>0.5 So 0.5 a<br>Tj(°C) 0.3 T j (°C)<br>0.0 SSS 0.0<br>| ft ee<br>-50 | [ot] -25 0 25 50 75 100 TS 125 150 | -50 Se -25 0 25 50 75 100 125 150<br>**----- End of picture text -----**<br>


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**Characteristics** 

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**----- Start of picture text -----**<br>
Figure 7: Relative variation of static dV/dt  Figure 8: Surge peak on-state current versus<br>immunity versus junction temperature   number of cycles<br>(typical values)<br>dV/dt [ Tj ] / dV/dt [ Tj = 150 °C ] ITSM(A)<br>12 500<br>11 VD = 402 V<br>ee ee ee ee<br>10<br>98 a Above test equipment capability INpS 400 eenl Non repetitive TIEee|elleneete eel||<br>7 iNe| | | 300 0LH Tj initial = 25 °C ULI mai<br>6<br>5 eeeNN Pai: llPL<br>43 pFPPpyptyePprpypypyTN{ly | | | | | | | | KT | 200 | T Repetitive c = 120  ° C PUFANTee<br>2<br>| }| | | | | | | | | [NY 100 Pe LTT<br>1<br>0 +++}+ | Eo Toh Number of cycles TotH<br>90 95 100 105 110 115 120 125 130 135 140 145 150 0 ell ll<br>Tj(°C) 1 10 100 1000<br>**----- End of picture text -----**<br>


**Figure 9: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms** 

**Figure 10: On-state characteristics (maximum values)** 

**==> picture [451 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 11: Relative variation of leakage current  Figure 12: Thermal resistance junction to ambient<br>versus junction temperature  versus copper surface under tab<br>IDRM , IRRM [Tj; VDRM , VRRM ] / IDRM , IRRM [150 °C; 600 V] Rth(j-a) (°C/W)<br>1.0E+00 SS SS 80 fF J | | | | | | | J J fT 7 fT 7 7<br>V DRM = V RRM = 600 V 70<br>1.0E-01 =, ee | (Ee<br>60<br>a<br>_ Bees [ee] a a ee ee a ee ee [|] | 50 FECr\i | | [| | | fEeFf [| | ft f | fy fy<br>1.0E-02<br>40<br>SSSSS | AC<br>1.0E-03 30<br>ea a a a a a a ee<br>es ee ee 20 es<br>1.0E-04 Epoxy printed board FR4, eCU= 35 µm<br>SS 10<br>SS SSS SS = 8 === -Seeeeeeec SCu(cm²)<br>1.0E-05 a 0 Error<br>25 50 75 100 125 150 0 5 10 15 20 25 30 35 40<br>Tj(°C)<br>**----- End of picture text -----**<br>


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**Package** information 

## **2 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _**www.st.com**_ . ECOPACK[®] is an ST trademark. 

- Epoxy meets UL94, V0 

- Lead-free, halogen-free package 

## **2.1 D²PAK package information** 

**Figure 13: D²PAK package outline** 

**==> picture [407 x 265] intentionally omitted <==**

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**Package** information 

**Table 6: D²PAK package mechanical data** 

|**Ref.**|||**Dimensions**|**Dimensions**|||
|---|---|---|---|---|---|---|
|||**Millimeters**|||**Inches****_(1)_**||
||**Min.**|**Typ.**|**Max.**|**Min.**|**Typ.**|**Max.**|
|A|4.30||4.60|0.1693||0.1811|
|A1|2.49||2.69|0.0980||0.1059|
|A2|0.03||0.23|0.0012||0.0091|
|A3||0.25|||0.0098||
|b|0.70||0.93|0.0276||0.0366|
|b2|1.25||1.7|0.0492||0.0669|
|c|0.45||0.60|0.0177||0.0236|
|c2|1.21||1.36|0.0476||0.0535|
|D|8.95||9.35|0.3524||0.3681|
|D1|7.50||8.00|0.2953||0.3150|
|D2|1.30||1.70|0.0512||0.0669|
|e|2.54|||0.1|||
|E|10.00||10.28|0.3937||0.4047|
|E1|8.30||8.70|0.3268||0.3425|
|E2|6.85||7.25|0.2697||0.2854|
|G|4.88||5.28|0.1921||0.2079|
|H|15||15.85|0.5906||0.6240|
|L|1.78||2.28|0.0701||0.0898|
|L2|1.27||1.40|0.0500||0.0551|
|L3|1.40||1.75|0.0551||0.0689|
|R||0.40|||0.0157||
|V2|0°||8°|0°||8°|



**Notes:** 

(1)Dimensions in inches are given for reference only 

**Figure 14: D²PAK recommended footprint (dimensions are in mm)** 

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**Ordering** information 

**TN5015H-6G** 

## **3 Ordering information** 

**Figure 15: Ordering information scheme** 

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**----- Start of picture text -----**<br>
TN 50 15 H - 6 G - TR<br>Series<br>TN = SCR<br>Current<br>50 = 50 A<br>Gate sensitivity<br>15= 15 m A<br>High temperature<br>H = 150 °C<br>Voltage<br>6 = 600 V<br>Package<br>G=D²PAK<br>Packing mode<br>Blank = tube<br>TR = Tape and reel<br>**----- End of picture text -----**<br>


||**Table 7: Ordering information**|**Table 7: Ordering information**|**Table 7: Ordering information**|**Table 7: Ordering information**||
|---|---|---|---|---|---|
|**Order code**|**Marking**|**Package**|**Weight**|**Base qty.**|**Delivery mode**|
|TN5015H-6G|TN5015H6|D²PAK|1.5g|50|Tube|
|TN5015H-6G-TR|TN5015H6|D²PAK|1.5 g|1000|Tape and reel|



## **4 Revision history** 

**Table 8: Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|08-Jun-2017|1|Initial release.|



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## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

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No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

- © 2017 STMicroelectronics – All rights reserved 

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