# Thyristor, 1.2 kV, 50 mA, 25 A, 40 A, TO-263 (D2PAK), 3 Pins

![Product image](https://novapart.co/image/farnell:3993616RL/)

**URL**: https://novapart.co/products/TN4050HP-12G2YTR/thyristor-12-kv-50-ma-25-a-40-to-263-d2pak-3-pins
**SKU**: TN4050HP-12G2YTR
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || Thyristors || Thyristors - SCRs
**Price**: €1.4700
**Stock**: 10+
**Lead Time**: 373 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Thyristor Mounting | Surface Mount |
| Holding Current Max | 100mA |
| On State Rms Current | 40A |
| Thyristor Case Style | TO-263 (D2PAK) |
| Average On State Current | 25A |
| Gate Trigger Current Max | 50mA |
| Gate Trigger Voltage Max | 1.3V |
| Operating Temperature Max | 150°C |
| Peak Non Repetitive Surge Current | 400A |
| Peak Repetitive Off State Voltage | 1.2kV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3993616RL/)

**TN4050HP-12G2YTR** 

Datasheet 

## 40 A 1200 V automotive grade thyristor (SCR) 

**==> picture [101 x 144] intentionally omitted <==**

**----- Start of picture text -----**<br>
A<br>G<br>K<br>K<br>G<br>K D²PAK HV<br>A<br>**----- End of picture text -----**<br>


## **Features** 

- AEC-Q101 qualified 

- High junction temperature: 150 °C 

- AC off state voltage: +/- 1200 V 

- Nominal on-state RMS current: 40 ARMS 

- High EFT noise immunity: 1000 V/μs 

- Max. gate triggering current: 50 mA 

- D²PAK HV creepage distance (anode to cathode): 

   - With top coating: 5.38 mm min. 

- Without top coating: 3.48 mm min. 

- • ECOPACK2 compliant component 

## **Application** 

- On board charger 

- Capacitor discharge 

- Overvoltage crowbar protection 

- Power supplies 

- AC switches 

## **Product status** 

- Solid state relays 

TN4050HP-12G2YTR 

## **Description** 

|**Product summary**|**Product summary**|
|---|---|
|**IT(RMS)**|40 A|
|**VDRM/VRRM**|1200 V|
|**VDSM/VRSM**|1400 V|
|**IGT**|50 mA|
|**Tj**|-40 to 150 °C|



The TN4050HP-12G2YTR is an automotive grade SCR thyristor designed for applications such as automotive on board and stationary battery chargers. 

This SCR Thyristor, rated for a 40 A RMS power switching, offers superior performances in peak voltage robustness up to 400 V sine wave pulse. Its key features allow the design of functions such as a 56 A RMS AC switch and a 50 A AC-DC controlled rectifier-bridge. 

The TN4050HP-12G2YTR is available in D²PAK HV surface mount package, ideal for automatic assembly lines. 

D²PAK HV package offers increased creepage distance of 5.38 mm, simplifying design conformity with insulation coordination standards such as IEC60664-1 and UL-840. 

**DS13795** - **Rev 2** - **December 2021** For further information contact your local STMicroelectronics sales office. 

www.st.com 

**TN4050HP-12G2YTR Characteristics** 

## **1 Characteristics** 

**Table 1. Absolute ratings (limiting values)** 

|**Symbol**|**Parameter**|||**Value**|**Unit**|
|---|---|---|---|---|---|
|IT(RMS)|RMS on-state current (180 ° conduction angle)||TC= 135 °C|40|A|
|IT(AV)|Average on-state current (180 ° conduction angle)|||25||
|ITSM|Non repetitive surge peak on-state current, VR= 0 V|tp= 8.3 ms|Tjinitial = 25 °C|440|A|
|||tp= 10 ms||400||
|I2t|I2t value for fusing|tp= 10 ms|Tj= 25 °C|800|A2s|
|dl/dt|Critical rate of rise of on-state current,<br>IG= 2 x IGT, tr ≤ 100 ns|f = 50 Hz|Tj= 150 °C|200|A/µs|
|VDRM/ VRRM|Repetitive off-state voltage||Tj= 150 °C|1200|V|
|VDSM/ VRSM|Non repetitive surge peak off-state voltage|tp= 10 ms|Tj= 25 °C|1400|V|
|VGM|Peak forward gate voltage|tp= 20 µs|Tj= 150 °C|10|V|
|IGM|Peak forward gate current|tp= 20 µs|Tj= 150 °C|8|A|
|VRGM|Maximum peak reverse gate voltage||Tj= 25 °C|5|V|
|PG(AV)|Average gate power dissipation||Tj= 150 °C|1|W|
|Tstg|Storage junction temperature range|||-40 to +150|°C|
|Tj|Operating junction temperature|||-40 to +150|°C|



**Table 2. Electrical characteristics (Tj = 25 °C unless otherwise specified)** 

|**Symbol**|**Test Conditions**|**Test Conditions**||**Value**|**Unit**|
|---|---|---|---|---|---|
|IGT|VD= 12 V, RL= 33 Ω||Min.|10|mA|
||||Max.|50||
|VGT|||Max.|1.3|V|
|IGD|VD= 800 V, RL= 3.3 Ω|Tj= 150 °C|Min.|3|mA|
|VGD|VD= 800 V, RL= 3.3 Ω|Tj= 150 °C|Min.|0.2|V|
|IH|IT= 500 mA, gate open||Max.|100|mA|
|IL|IG= 1.2 x IGT||Max.|125|mA|
|dV/dt|VD= 800 V, gate open|Tj= 150 °C|Min.|1000|V/µs|



**Table 3. Timing Parameters** 

|**Symbol**|**Test Conditions**|**Test Conditions**|**Test Conditions**|**Value**|**Unit**|
|---|---|---|---|---|---|
|tgt|IT= 80 A , VD= 800 V, IG= 100 mA, dIG/dt = 0.2 A/µs||Typ.|1|µs|
|tq|ITM= 25 A, VD= 800 V, dIT/dt = 10 A/µs,<br>VR= 75 V, dVD/dt = 20 V/µs, tp= 100 µs|Tj= 150 °C|Typ.|150|µs|



**Table 4. Static Characteristics** 

|**Symbol**|**Test Conditions**|**Test Conditions**|**Test Conditions**|**Value**|**Unit**|
|---|---|---|---|---|---|
|VTM|ITM= 80 A, tP= 380 µs|Tj= 25 °C|Max.|1.55|V|



**DS13795** - **Rev 2** 

**page 2/11** 

**TN4050HP-12G2YTR Characteristics** 

|**Symbol**|**Test Conditions**|**Test Conditions**|**Test Conditions**|**Value**|**Unit**|
|---|---|---|---|---|---|
|VTO|On-state threshold voltage|Tj= 150 °C|Max.|0.83|V|
|RD|On-state dynamic resistance|Tj= 150 °C|Max.|10|mΩ|
|IDRM/IRRM|VD= VDRM, VR= VRRM|Tj= 25 °C|Max.|5|µA|
|||Tj= 125 °C||0.9|mA|
|||Tj= 150 °C||6|mA|
|IDSM/IRSM|VD= VDSM, VR= VRSM|Tj= 25 °C|Max.|10|µA|



**Table 5. Thermal parameters** 

|**Symbol**|**Parameter**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|---|
|Rth(j-c)|Junction to case (DC)|Max.|0.4|°C/W|
|Rth(j-a)|Junction to ambient (DC, SCU= 2.5 cm², ℮CU= 70 µm)|Typ.|45||



**DS13795** - **Rev 2** 

**page 3/11** 

**TN4050HP-12G2YTR Characteristics (curves)** 

## **1.1 Characteristics (curves)** 

**Figure 1. Maximum average power dissipation versus Figure 2. Average and D.C. on-state current versus case average on-state current temperature** 

**==> picture [221 x 151] intentionally omitted <==**

**----- Start of picture text -----**<br>
P(W)<br>45<br>40 α = 180 °  DC<br>α = 120 °<br>35 α = 90 °<br>30 α = 60 °<br>α = 30 °<br>25<br>20<br>15<br>10 360  °<br>5<br>IT(AV)(A) α<br>0<br>0 5 10 15 20 25 30 35<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
IT(AV)(A)<br>45<br>DC<br>40<br>35<br>30<br>α = 180 °<br>25<br>α = 120 °<br>20 α = 90 °<br>α = 60 °<br>15<br>α = 30 °<br>10<br>5<br>0 Tc(°C)<br>0 25 50 75 100 125 150<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Figure 3. Average and D.C. on-state current versus<br>Figure 4. On-state characteristics (maximum values)<br>ambient temperature<br>ITM(A)<br>4.0 IT(AV)(A) 1000<br>3.5<br>3.0  DC<br>100  Tj = 150 °C<br>2.5<br>α = 180 °<br>2.5<br>1.5 10<br>1.0<br>T j  max: 150 °C<br>0.5  T j  = 25 °C VT0 = 0.83 V<br>Ta( ° C) 1 VTM (V) RD = 10 mΩ<br>0.0<br>0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5<br>0 25 50 75 100 125 150<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Figure 5. Surge peak on-state current versus number of Figure 6. Non repetitive surge peak on-state current for a<br>cycles sinusoidal pulse with width tp < 10 ms<br>ITSM(A) ITSM(A)<br>450 10000<br>dI/dt limitation: 200 A/µs<br>400 Non repetitive T j  = 25 °C Tj initial = 25 °C<br>350 tp=10ms<br>300 One cycle  1000<br>250 VR = 0 V ITSM<br>200<br>150 100<br>Repetitive Tc = 135 °C<br>100<br>50 Number of cycles t P (ms)<br>0 10<br>1 10 100 1000 0.01 0.10 1.00 10.00<br>**----- End of picture text -----**<br>


**DS13795** - **Rev 2** 

**page 4/11** 

**TN4050HP-12G2YTR Characteristics (curves)** 

**Figure 7. Relative variation of leakage current versus junction temperature for different values of blocking voltage (typical values)** 

**==> picture [225 x 151] intentionally omitted <==**

**----- Start of picture text -----**<br>
IDRM, IRRM [ Tj ;VDRM , VRRM] / IDRM / IRRM<br>1.0E+00<br>1.0E-01<br>1.0E-02 V  DRM = V RRM = 1200 V<br>1.0E-03<br>1.0E-04<br>T (°C)<br>j<br>1.0E-05<br>25 50 75 100 125 150<br>**----- End of picture text -----**<br>


**Figure 9. Relative variation of gate trigger current and gate voltage versus junction temperature (typical values)** 

**==> picture [217 x 152] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.0 IGT, VGT [ Tj ] / IGT, VGT [ Tj = 25 °C]<br> I<br>1.5 GT<br>1.0  VGT<br>0.5<br>Tj(°C)<br>0.0<br>-40 -20 0 20 40 60 80 100 120 140<br>**----- End of picture text -----**<br>


**Figure 11. Thermal resistance junction to ambient versus copper surface under tab (typical values, epoxy printed board FR4) (D²PAK)** 

**==> picture [217 x 151] intentionally omitted <==**

**----- Start of picture text -----**<br>
80 Rth(j-a)(°C/W)<br>D²PAK<br>70<br>60<br>50<br>40<br>e Cu  = 35 µm<br>30<br>eCu = 70 µm<br>20<br>10 eCu = 105 µm<br>S Cu (cm²)<br>0<br>0 5 10 15 20 25 30 35 40<br>**----- End of picture text -----**<br>


**Figure 8. Relative variation of holding and latching current versus junction temperature (typical values)** 

**==> picture [221 x 154] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.8 IH, IL [ Tj ] / IH, IL [ Tj = 25 °C]<br>1.5<br> IL<br>1.3<br> IH<br>1.0<br>0.8<br>0.5<br>0.3<br>Tj(°C)<br>0.0<br>-40 -20 0 20 40 60 80 100 120 140<br>**----- End of picture text -----**<br>


**Figure 10. Relative variation of thermal impedance junction to case and junction to ambient versus pulse duration** 

**==> picture [222 x 145] intentionally omitted <==**

**----- Start of picture text -----**<br>
K = [Zth / Rth]<br>1.00<br>Zth(j-c)<br>Zth(j-a)<br>0.10<br>tp(s)<br>0.01<br>1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03<br>**----- End of picture text -----**<br>


**Figure 12. Relative variation of static dV/dt immunity versus junction temperature** 

**==> picture [221 x 151] intentionally omitted <==**

**----- Start of picture text -----**<br>
dv/dt [ Tj ] / dv/dt [ Tj = 150 °C]<br>6<br>VD = VR = 800 V<br>5<br>4<br>3<br>2<br>1<br>Tj(°C)<br>0<br>25 50 75 100 125 150<br>**----- End of picture text -----**<br>


**DS13795** - **Rev 2** 

**page 5/11** 

**TN4050HP-12G2YTR Package information** 

## **2 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 

## **2.1 D²PAK high voltage package information** 

- Epoxy meets UL94, V0 

**Figure 13. D²PAK high voltage package outline** 

**DS13795** - **Rev 2** 

**page 6/11** 

**TN4050HP-12G2YTR D²PAK high voltage package information** 

**Table 6. D²PAK high voltage package mechanical data** 

||**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|
|---|---|---|---|---|
|**Ref.**|**Millimeters**||**Inches**||
||**Min.**|**Max.**|**Min.**|**Max.**|
|A|4.30|4.70|0.1692|0.1851|
|A1|0.03|0.20|0.0011|0.0079|
|C|1.17|1.37|0.0460|0.0540|
|D|8.95|9.35|0.3523|0.3682|
|e|4.98|5.18|0.1960|0.2040|
|E|0.50|0.90|0.0196|0.0355|
|F|0.78|0.85|0.0307|0.0335|
|F2|1.14|1.70|0.0448|0.0670|
|H|10.00|10.40|0.3937|0.4095|
|H1|7.40|7.80|0.2913|0.3071|
|J1|2.49|2.69|0.0980|0.1060|
|L|15.30|15.80|0.6023|0.6221|
|L1|1.27|1.40|0.0500|0.0552|
|L2|4.93|5.23|0.1940|0.2060|
|L3|6.85|7.25|0.2696|0.2855|
|L4|1.50|1.7|0.0590|0.0670|
|M|2.60|2.9|0.1023|0.1142|
|R|0.20|0.60|0.0078|0.0237|
|V|0°|8°|0°|8°|



**Figure 14. D²PAK high voltage footprint in mm** 

**==> picture [162 x 163] intentionally omitted <==**

**----- Start of picture text -----**<br>
10,58<br>7,46<br>15,95<br>5,10<br>3,40<br>1,20<br>5,08<br>**----- End of picture text -----**<br>


_Note: For package and tape orientation, reel and inner box dimensions and tape outline please check TN1173._ 

**DS13795** - **Rev 2** 

**page 7/11** 

**TN4050HP-12G2YTR D²PAK high voltage package information** 

## **2.1.1 Creepage distance between anode and cathode** 

**Table 7. Creepage distance between anode and cathode** 

|**Symbol**|**Parameter**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|---|
|CdK-A1|Minimum creepage distance between K and A1 (with top coating)|D²PAK HV|5.38|mm|
|CdK-A2|Minimum creepage distance between K and A2 (without top coating)||3.48||



_Note:_ 

_D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. (refer to IEC 60664-1)_ 

## **Figure 15. Creepage with top coating** 

## **Figure 16. Creepage without top coating** 

**DS13795** - **Rev 2** 

**page 8/11** 

**TN4050HP-12G2YTR Ordering information** 

**3 Ordering information** 

**Figure 17. Ordering information scheme** 

**==> picture [389 x 268] intentionally omitted <==**

**----- Start of picture text -----**<br>
TN   40   50      HP   -  12    G2    Y     TR<br>Series<br>TN = SCR thyristor<br>Current (RMS)<br>40 = 40 A<br>Gate triggering current<br>50 = 50 mA<br>Series<br>HP = High temperature<br>Blocking voltage<br>12 = 1200 V<br>Package<br>G2 = D²PAK HV<br>Grade<br>Y = Automotive grade<br>Packing<br>TR = Tape and reel<br>**----- End of picture text -----**<br>


**Table 8. Ordering information** 

|**Order code**|**Marking**|**Package**|**Weight**|**Base qty.**|**Delivery mode**|
|---|---|---|---|---|---|
|TN4050HP-12G2YTR|TN40P12YB2|D²PAK HV|1.38 g|1000|Tape and reel 13"|



**DS13795** - **Rev 2** 

**page 9/11** 

**TN4050HP-12G2YTR** 

## **Revision history** 

**Table 9. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|03-Aug-2021|1|Initial release.|
|16-Dec-2021|2|UpdatedTable 2. AddedFigure 6andFigure 11.|



**DS13795** - **Rev 2** 

**page 10/11** 

**TN4050HP-12G2YTR** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2021 STMicroelectronics – All rights reserved 

**DS13795** - **Rev 2** 

**page 11/11** 



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- [Supplier page](https://es.farnell.com/stmicroelectronics/tn4050hp-12g2ytr/thyristor-1-2kv-40a-to-263/dp/3993616RL)
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