# Power MOSFET, N Channel, 300 V, 85 mA, 25 ohm, TO-236AB, Surface Mount

![Product image](https://novapart.co/image/farnell:3523048/)

**URL**: https://novapart.co/products/TN2130K1-G/power-mosfet-n-channel-300-v-85-ma-25-ohm-to-236ab
**SKU**: TN2130K1-G
**Manufacturer**: MICROCHIP
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2580
**Stock**: 1000+
**Lead Time**: 36 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (04-Feb-2026) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 360mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | TO-236AB |
| Drain Source Voltage Vds | 300V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 85mA |
| Drain Source On State Resistance | 25ohm |
| Gate Source Threshold Voltage Max | 2.4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3523048/)

_**Su ertex inc. p**_ 

**TN2130** 

## **N-Channel Enhancement-Mode Vertical DMOS FET** 

## **Features** 

- Free from secondary breakdown 

- Low power drive requirement 

- Ease of paralleling 

- Low CISS and fast switching speeds 

- Excellent thermal stability 

- Integral source-drain diode 

- High input impedance and high gain 

## **Applications** 

## **General Description** 

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. 

- Logic level interfaces – ideal for TTL and CMOS 

- Solid state relays 

- Battery operated systems 

- Photo-voltaic drives 

- Analog switches 

Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. 

- General purpose line drivers 

- Telecom switches 

**Ordering Information Product Summary Part Number Package Option Packing BV /BV RDS(ON) VGS(th) DSS DGS (max) (max)** TN2130K1-G TO-236AB (SOT-23) 3000/Reel _-G denotes a lead (Pb)-free / RoHS compliant package._ ~~ee~~ 300V 25Ω 2.4V _Contact factory for Wafer / Die availablity. Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant._ **Pin Configuration Absolute Maximum Ratings Parameter Value DRAIN** Drain-to-source voltage BVDSS Drain-to-gate voltage BVDGS **SOURCE** Gate-to-source voltage ±20V **GATE** ~~—~~ Operating and storage temperature -55[O] C to +150[O] C **TO-236AB (SOT-23)** _Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground._ 

## **Product Marking** 

**Typical Thermal Resistance N1TW** W = Code for Week Sealed ~~——~~ = “Green” Packaging **Packagegee** _**θjaja** Package may or may not include the following marks: Si or_ ~~a~~ TO-236AB (SOT-23)(SOT-23)SOT-23)) 203[[O]] C/W **TO-236AB (SOT-23)** 

**Packagegee** _**θjaja**_ ~~a~~ TO-236AB (SOT-23)(SOT-23)SOT-23)) 203[[O]] C/W 

_**Supertex inc. www.supertex.com**_ 

_Doc.# DSFP-TN2130 B080913_ 

**TN2130** 

## **Thermal Characteristics** 

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**----- Start of picture text -----**<br>
Package (continuous)ID [†] (pulsed)ID Power Dissipation@TC = 25 [O] C IDR † IDRM<br>TO-236AB (SOT-23) 85mA 200mA 0.36W 85mA 200mA<br>**----- End of picture text -----**<br>


_**Notes:**_ 

_†    ID (continuous) is limited by max rated Tj ._ 

## **Electrical Characteristics** _(TA = 25[O] C unless otherwise specified)_ 

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**----- Start of picture text -----**<br>
Sym Parameter Min Typ Max Units Conditions<br>BVDSS Drain-to-source breakdown voltage 300 - - V VGS = 0V, ID = 1.0mA<br>VGS(th) Gate threshold voltage 0.8 - 2.4 V VGS = VDS, ID = 1.0mA<br>ΔVGS(th) Change in VGS(th) with temperature - - -5.5 mV/ [O] C VGS = VDS, ID = 1.0mA<br>IGSS Gate body leakage - - 100 nA VGS = ± 20V, VDS = 0V<br>- - 10 VGS = 0V, VDS = Max Rating<br>IDSS Zero gate voltage drain current - - 100 µA VDS = 0.8Max Rating,<br>VGS = 0V, TA = 125 [O] C<br>ID(ON) On-state drain current 250 - - mA VGS = 10V, VDS = 25V<br>RDS(ON) Static drain-to-source on-state resistance - - 25 Ω VGS = 4.5V, ID = 120mA<br>ΔRDS(ON) Change in RDS(ON) with temperature - - 1.1 %/ [O] C VGS = 4.5V, ID = 120mA<br>GFS Forward transductance - 250 - mmho  VDS = 25V, ID = 100mA<br>CISS Input capacitance - - 50 VGS = 0V,<br>COSS Common source output capacitance - - 15 pF VDS = 25V,<br>f = 1.0MHz<br>CRSS Reverse transfer capacitance - - 5.0<br>td(ON) Turn-on delay time  - - 10<br>tr Rise time - - 7.0 ns IVDDD = 120mA, = 25V,<br>td(OFF) Turn-off delay time - - 12 RGEN = 25Ω<br>t Fall time - - 15<br>f<br>VSD Diode forward voltage drop - - 1.8 V VGS = 0V, ISD = 120mA<br>trr Reverse recovery time - 400 - ns VGS = 0V, ISD = 120mA<br>**----- End of picture text -----**<br>


_**Notes:**_ 

_1. All D.C. parameters 100% tested at 25[O] C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)_ 

_2. All A.C. parameters sample tested._ 

## **Switching Waveforms and Test Circuit** 

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10V 90%  VDD<br>INPUT Pulse R<br>10% Generator L<br>0V OUTPUT<br>t t<br>(ON)  (OFF)  R<br>GEN<br>td(ON)  tr  td(OFF) tf<br>VDD INPUT D.U.T.<br>10%  10%<br>OUTPUT<br>0V 90%  90%<br>**----- End of picture text -----**<br>


_**Supertex inc.**_ 

_Doc.# DSFP-TN2130 B080913_ 

_**www.supertex.com**_ 

2 

**TN2130** 

## **Typical Performance Curves** 

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Output Characteristics<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
1.0<br>0.8<br>VGS = 10V<br>8V<br>0.6<br>6V<br>4V<br>0.4<br>3V<br>0.2<br>2V<br>0 0                 10                 20                30                40                50<br>VDS (volts)<br>(amperes)<br>ID<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Transconductance vs. Drain Current<br>1.0<br>VDS = 15V<br>0.8<br>0.6<br>TA = -55 [O] C<br>25 [O] C<br>0.4<br>0.2<br>125 [O] C<br>0<br>0  0.1 0.2  0.3 0.4  0.5<br> ID (amperes)<br>Maximum Rated Safe Operating Area<br>1.0<br>SOT-23 (pulsed)<br>0.1  SOT-23 (DC)<br>0.01<br>TA = 25 [O] C<br>0.001<br>0                              10                             100                           1000<br>VDS (volts)<br>(siemens)<br>FS<br>G<br>(amperes)<br>ID<br>**----- End of picture text -----**<br>


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Saturation Characteristics<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
0.5<br>VGS = 10V<br>6V<br>0.4<br>4V<br>0.3<br>3V<br>0.2<br>0.1<br>2V<br>0 0                 2.0                4.0               6.0               8.0                10<br>VDS (volts)<br>(amperes)<br>ID<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Power Dissipation vs. Temperature<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>SOT-23<br>0<br>0             25             50             75            100           125           150<br>TA ( [O] C)<br>Thermal Response Characteristics<br>1.0<br>0.8<br>0.6<br>0.4<br>SOT-23<br>PD = 0.36W<br>0.2  TA = 25 [O] C<br>0<br>0                     0.01                   0.1                    1.0                     10<br> tP (seconds)<br>(watts)<br>D<br>P<br>Thermal Resistance (normalized)<br>**----- End of picture text -----**<br>


_**Supertex inc.**_ 

_Doc.# DSFP-TN2130 B080913_ 

_**www.supertex.com**_ 

3 

**TN2130** 

## **Typical Performance Curves** _**(cont.)**_ 

## **BVDSS Variation with Temperature** 

## **On-Resistance vs. Drain Current** 

**==> picture [196 x 188] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.1<br>1.0<br>0.9<br>-50                    0                     50                  100                   150<br>Tj (j (( [[O]] C)<br>(normalized)<br>DSS<br>BV<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
50<br>VGS = 4.5V<br>40<br>VGS = 10V<br>30<br>1.0<br>20<br>10<br>0.9  0<br>-50                    0                     50                  100                   150  0                0.2              0.4              0.6              0.8              1.0<br>Tj (j (( [[O]] C) ID (amperes)<br>Transfer Characteristics  VGS and RDS Variation with Temperature<br>1.0  2.0<br>1.2<br>RDS(ON) @ 4.5V, 120mA<br>0.8  1.6<br>1.1<br>0.6  1.2<br>1.0<br>0.4  0.8<br>0.9<br>VGS(th) @ 1.0mA<br>0.2  0.4<br>0.8<br>0  0<br>0                2.0              4.0              6.0              8.0               10  -50                     0                     50                  100                  150<br>VGS (volts) Tj ( [O] C)<br>Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics<br>50  10<br>f = 1.0MHz<br>8.0<br>VDS = 10V<br>CISS  6.0  80 pF<br>25<br>VDS = 40V<br>4.0<br>2.0<br>COSS<br>28pF<br>CRSS<br>0  0<br>0                     10                    20                    30                    40   0                0.2              0.4              0.6              0.8              1.0<br>VDS (volts) QG (nanocoulombs)<br>VDS = 15V<br>25OC<br>TA = -55OC  125OC<br>(ohms)<br>(normalized)<br>DS(ON)<br>DSS  R<br>BV<br>(normalized) (normalized)<br>(amperes)<br>ID<br>VGS(th)  RDS(ON)<br>(volts)<br>GS<br>V<br>C (picofarads)<br>**----- End of picture text -----**<br>


_**Supertex inc.**_ 

_Doc.# DSFP-TN2130 B080913_ 

_**www.supertex.com**_ 

4 

**TN2130** 

## **3-Lead TO-236AB (SOT-23) Package Outline (K1)** 

## _**2.90x1.30mm body, 1.12mm height (max), 1.90mm pitch**_ 

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D<br>3<br>E1 E<br>Gauge<br>0.25<br>Plane<br>1 2 L Seating<br>Plane<br>e b L1<br>e1<br>Top View View B<br>**----- End of picture text -----**<br>


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Top View View B<br>View B<br>A<br>A2<br>A<br>Seating<br>Plane<br>A1<br>Side View  A View A - A<br>**----- End of picture text -----**<br>


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Symbol A A1 A2 b D E E1 e e1 L L1 θ<br>MIN 0.89 0.01 0.88 0.30 2.80 2.10 1.20 0.20 [†] 0 [O]<br>Dimension 0.95 1.90 0.54<br>NOM - - 0.95 - 2.90 - 1.30 0.50 -<br>(mm) BSC BSC REF<br>MAX 1.12 0.10 1.02 0.50 3.04 2.64 1.40 0.60 8 [O]<br>**----- End of picture text -----**<br>


_JEDEC Registration TO-236, Variation AB, Issue H, Jan. 1999. † This dimension differs from the JEDEC drawing._ 

_**Drawings not to scale.**_ 

_**Supertex Doc.#:** DSPD-3TO236ABK1, Version C041309._ 

_(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.)_ 

_**Supertex inc.**_ does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” _**Supertex inc.**_ does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the _**Supertex inc.**_ (website: http//www.supertex.com) 

©2013 _**Supertex inc.**_ All rights reserved. Unauthorized use or reproduction is prohibited. 

_**Supertex inc.**_ 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 _**www.supertex.com**_ 

_Doc.# DSFP-TN2130 B080913_ 

5 



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