# Thyristor, 600 V, 10 mA, 12.7 A, 20 A, TO-220AB, 3 Pins

![Product image](https://novapart.co/image/farnell:2851954/)

**URL**: https://novapart.co/products/TN2010H-6T/thyristor-600-v-10-ma-127-a-20-to-220ab-3-pins
**SKU**: TN2010H-6T
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || Thyristors || Thyristors - SCRs
**Price**: €0.3580
**Stock**: 10+
**Lead Time**: 120 days (indicative)

## Description

Peak Repetitive Off-State Voltage, Vdrm:600V; Gate Trigger Current Max, Igt:10mA; Current It av:12.7A; On State RMS Current IT(rms):20A; Thyristor Case Style:TO-220AB; No. of Pins:3Pins; Pea

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | TN2010H |
| Thyristor Mounting | Through Hole |
| Holding Current Max | 40mA |
| On State Rms Current | 20A |
| Thyristor Case Style | TO-220AB |
| Average On State Current | 12.7A |
| Gate Trigger Current Max | 10mA |
| Gate Trigger Voltage Max | 1.3V |
| Operating Temperature Max | 150°C |
| Peak Non Repetitive Surge Current | 197A |
| Peak Repetitive Off State Voltage | 600V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2851954/)

## **TN2010H-6T** 

## High temperature 20 A SCRs 

Datasheet - production data 

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**----- Start of picture text -----**<br>
A<br>G<br>K<br>ry A<br>K<br>A TO-220AB<br>G<br>**----- End of picture text -----**<br>


## **Description** 

Packaged in a non-isolated TO-220AB, this device offers high thermal performance during operation of up to 20 ARMS, thanks to a junction temperature of up to 150 °C. 

The combination of noise immunity and low gate triggering current allows to design strong and compact control circuit. 

**Table 1: Device summary Order code Package VDRM/VRRM IGT** TN2010H-6T TO-220AB 600 V 10 mA ~~a~~ 

## **Features** 

- High junction temperature: Tj = 150 °C 

- High noise immunity dV/dt = 400 V/µs up to 150 °C 

- Gate triggering current IGT = 10 mA 

- Peak off-state voltage VDRM/VRRM = 600 V 

- High turn on current rise dI/dt = 100 A/µs 

- ECOPACK[®] 2 compliant component 

## **Applications** 

- Motorbike voltage regulator circuits 

- Inrush current limiting circuits 

- Motor control circuits and starters 

- Light dimmers 

- Solid state relays 

August 2017 

DocID030739 Rev 1 

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This is information on a product in full production. 

_www.st.com_ 

**Characteristics** 

**TN2010H-6T** 

## **1 Characteristics** 

**Table 2: Absolute maximum ratings (limiting values), Tj = 25 °C unless otherwise specified** 

|**Symbol**|**Parameter**|**Parameter**||**Value**|**Unit**|
|---|---|---|---|---|---|
|IT(RMS)|RMS on-state current<br>(180 ° conduction angle)||Tc= 132 °C|20|A|
|IT(AV)|Average on-state current<br>(180 ° conduction angle)||Tc= 132 °C|12.7|A|
||||Tc= 137 °C|10||
||||Tc= 140 °C|8||
|ITSM|Non repetitive surge peak on-state current<br>( Tjinitial = 25 °C)||tp= 8.3 ms|197|A|
||||tp= 10 ms|180||
|I2t|I2t value for fusing||tp= 10 ms|162|A2s|
|dl/dt|Critical rate of rise of on-state current<br>IG= 2 x IGT, tr ≤ 100 ns||f = 60 Hz|100|A/µs|
|VDSM/VRSM|Non repetitive surgepeak off-state voltage||tp= 10 ms|700|V|
|IGM|Peakgate current|tp= 20µs|Tj= 150 °C|4|A|
|PG(AV)|Averagegatepower dissipation||Tj= 150 °C|1|W|
|VRGM|Maximumpeak reversegate voltage|||5|V|
|Tstg|Storagejunction temperature range|||-40 to +150|°C|
|Tj|Operating junction temperature range|||-40 to +150|°C|
|TL|Maximum lead temperature for solderingduring10 s|||260|°C|



**Table 3: Electrical characteristics (Tj = 25 °C unless otherwise specified)** 

|**Symbol**|**Test conditions**|**Test conditions**||**Value**|**Unit**|
|---|---|---|---|---|---|
|IGT|VD= 12 V, RL= 33 Ω||Typ.|5|mA|
||||Max.|10||
|VGT|||Max.|1.3|V|
|VGD|VD= VDRM, RL= 3.3 kΩ|Tj= 150 °C|Min.|0.1|V|
|IH|IT= 500 mA,gate open||Max.|40|mA|
|IL|IG= 1.2 x IGT||Max.|60|mA|
|dV/dt|VD= 402 V,gate open|Tj= 150 °C|Min.|400|V/µs|
|tgt|ITM= 40 A, VD= 402 V, IG= 20 mA, (dIG/dt) max = 0.2 A/µs||Typ.|1.9|µs|
|tq|ITM= 40 A, VD= 402 V, (dI/dt)off = 30 A/µs,<br>VR= 25 V, dVD/dt = 40 V/µs|Tj= 150 °C|Typ.|70|µs|



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**Characteristics** 

**TN2010H-6T** 

## **Table 4: Static characteristics** 

|**Symbol**|**Test conditions**|**Test conditions**||**Value**|**Unit**|
|---|---|---|---|---|---|
|VTM|ITM= 40 A, tp= 380µs|Tj= 25 °C|Max.|1.6|V|
|VTO|Threshold voltage|Tj= 150 °C|Max.|0.82||
|RD|Dynamic resistance|Tj= 150 °C|Max.|17.5|mΩ|
|IDRM, IRRM|VD= VDRM,VR= VRRM|Tj= 25 °C|Max.|5|µA|
|||Tj= 125 °C||2|mA|
|||Tj= 150 °C||3.9||



**Table 5: Thermal parameters** 

|**Symbol**|**Parameter**||**Value**|**Unit**|
|---|---|---|---|---|
|Rth(j-c)|Junction to case (DC)|Max.|1.0|°C/W|
|Rth(j-a)|Junction to ambient (DC)|Typ.|60||



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**Characteristics** 

**TN2010H-6T** 

## **1.1 Characteristics (curves)** 

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**----- Start of picture text -----**<br>
Figure 1: Maximum power dissipation versus  Figure 2: Average and DC on-state current versus<br>average on-state current  case temperature<br>20 P(W) IT(AV)(A)<br>24<br>18 α = 180  ° DC 22 DC<br>α = 120 °<br>16 20<br>α = 90 °<br>14 α = 60 ° 18<br>α = 30 ° 16<br>12<br>14 α = 180 °<br>10 12 α = 120 °<br>8 10 α = 90 °<br>8 α = 60 °<br>6<br>4 360 ° 6 α = 30 °<br>4<br>2 α IT(AV)(A) 2 T c (°C)<br>0 0<br>0 5 10 15 20 0 25 50 75 100 125 150<br>**----- End of picture text -----**<br>


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Figure 3: Average and D.C. on state current versus  Figure 4: Relative variation of thermal impedance<br>ambient temperature  versus pulse duration<br>IT(AV)(A) K = [Zth/ Rth]<br>3.0 1.0E+0 0<br>2.5 Z th(j-c)<br>DC<br>2.0 Z<br>th(j-a)<br>α = 180 °<br>1.5 1.0E-0 1<br>1.0<br>0.5<br>0.0 T a (°C) 1.0E-0 2 tP(s)<br>0 25 50 75 100 125 150 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03<br>Figure 5: Relative variation of gate triggering  Figure 6: Relative variation of holding and latching<br>current and gate voltage versus junction  current versus junction temperature<br>temperature (typical values)  (typical values)<br>2.5 IGT, VGT [ Tj ] / IGT, VGT [ Tj = 25 °C] 2.5IH, IL [ Tj ] / IH, IL [ Tj = 25 °C]<br>2.0 2.0 I L<br>I<br>GT<br>1.5 1.5 I H<br>1.0 V GT 1.0<br>0.5<br>0.5<br>0.0 Tj(°C) 0.0 T j (°C)<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>**----- End of picture text -----**<br>


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**Characteristics** 

**TN2010H-6T** 

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Figure 7: Relative variation of static dV/dt<br>Figure 8: Surge peak on-state current versus<br>immunity versus junction temperature<br>number of cycles<br>(typical values)<br>ITSM(A)<br>200<br>dV/dt [Tj ] / dV/dt [Tj = 150 °C]<br>16 VD = VR = 402 V Non repetitive Tj = 25 °C<br>14 tp=10ms<br>150<br>12 One cycle<br>Above test equipment capability<br>10<br>8 100<br>6 Repetitive T c  = 132 °C<br>4 50<br>2<br>0 Tj(°C) Number of cycles<br>25 50 75 100 125 150 0<br>1 10 100 1000<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Figure 9: Non repetitive surge peak on-state  Figure 10: On-state characteristics<br>current for a sinusoidal pulse with width tp < 10 ms  (maximum values)<br>ITSM(A) ITM(A)<br>10000 1000<br>dl/dt limitation: 100 A/µs Tj initial = 25 °C Vt0T = 0.82 Vj max:<br>Rd = 17.5 mΩ<br>1000 100<br>I<br>TSM<br>100 10<br>10 tp(ms) 1 T j = 150 °C T j = 25 °C VTM(V)<br>0.01 0.10 1.00 10.00 0.0 1.0 2.0 3.0 4.0<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Figure 11: Relative variation of leakage current versus junction temperature<br>IDRM, IRRM [ Tj ] / IDRM , IRRM [ Tj = 150 °C ]<br>1.E+00<br>V = V = 600 V<br>DRM  RRM<br>1.E-01<br>1.E-02<br>1.E-03<br>T ( ° C)<br>j<br>1.E-04<br>25 50 75 100 125 150<br>**----- End of picture text -----**<br>


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**Package** information 

**TN2010H-6T** 

## **2 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _**www.st.com**_ . ECOPACK[®] is an ST trademark. 

- Epoxy meets UL94, V0 

- Lead-free, halogen-free package 

- Recommended torque value (TO-220AB): 0.4 to 0.6 N.m 

## **2.1 TO-220AB package information** 

**Figure 12: TO-220AB (NIns.) package outline** 

**==> picture [407 x 417] intentionally omitted <==**

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**TN2010H-6T Package** information 

**Table 6: TO-220AB (NIns.) package mechanical data** 

|**Ref.**|||**Dimensions**|**Dimensions**|||
|---|---|---|---|---|---|---|
|||**Millimeters**|||**Inches****_(1)_**||
||**Min.**|**Typ.**|**Max.**|**Min.**|**Typ.**|**Max.**|
|A|15.20||15.90|0.5984||0.6260|
|a1||3.75|||0.1476||
|a2|13.00||14.00|0.5118||0.5512|
|B|10.00||10.40|0.3937||0.4094|
|b1|0.61||0.88|0.0240||0.0346|
|b2|1.23||1.32|0.0484||0.0520|
|C|4.40||4.60|0.1732||0.1811|
|c1|0.49||0.70|0.0193||0.0276|
|c2|2.40||2.72|0.0945||0.1071|
|e|2.40||2.70|0.0945||0.1063|
|F|6.20||6.60|0.2441||0.2598|
|I|3.73||3.88|0.1469||0.1528|
|L|2.65||2.95|0.1043||0.1161|
|I2|1.14||1.70|0.0449||0.0669|
|I3|1.14||1.70|0.0449||0.0669|
|I4|15.80|16.40|16.80|0.6220|0.6457|0.6614|
|M||2.6|||0.1024||



**Notes:** 

(1)Inch dimensions are for reference only. 

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**Ordering** information 

**TN2010H-6T** 

## **3 Ordering information** 

**Figure 13: Ordering information scheme** 

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**----- Start of picture text -----**<br>
TN 20 10 H - 6 T<br>Series<br>TN = SCR<br>Current<br>20 = 20 A<br>Gate sensitivity<br>10= 10 mA<br>High temperature<br>H = 150 °C<br>Voltage<br>6 = 600 V<br>Package<br>T = TO-220AB<br>Packing mode<br>Blank = tube<br>**----- End of picture text -----**<br>


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Table 7: Ordering information<br>Order code  Marking  Package  Weight  Base qty.  Delivery mode<br>TN2010H-6T  TN2010H6  TO-220AB  2.3 g 50  Tube<br>**----- End of picture text -----**<br>


## **4 Revision history** 

**Table 8: Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|29-Aug-2017|1|Initial release.|



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## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

- © 2017 STMicroelectronics – All rights reserved 

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## Links

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