# Thyristor, 800 V, 8 mA, 10 A, 16 A, TO-220AB, 3 Pins
**URL**: https://novapart.co/products/TN1605H-8I/thyristor-800-v-8-ma-10-a-16-to-220ab-3-pins
**SKU**: TN1605H-8I
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || Thyristors || Thyristors - SCRs
**Price**: €0.4910
**Stock**: 500+
**Lead Time**: 120 days (indicative)
## Specifications
| Parameter | Value |
|---|---|
| Svhc | No SVHC (21-Jan-2025) |
| No. Of Pins | 3Pins |
| Product Range | ECOPACK2 Series |
| Thyristor Mounting | Through Hole |
| Holding Current Max | 30mA |
| On State Rms Current | 16A |
| Thyristor Case Style | TO-220AB |
| Average On State Current | 10A |
| Gate Trigger Current Max | 8mA |
| Gate Trigger Voltage Max | 1.3V |
| Operating Temperature Max | 150°C |
| Peak Non Repetitive Surge Current | 177A |
| Peak Repetitive Off State Voltage | 800V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:4349896/)
**TN1605H-8I**
Datasheet
## 16 A 800 V high temperature SCR thyristor in TO-220AB insulated package
**==> picture [66 x 128] intentionally omitted <==**
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A
G
K
K
A
G
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**==> picture [86 x 7] intentionally omitted <==**
**----- Start of picture text -----**
TO-220AB insulated
**----- End of picture text -----**
## **Features**
- High junction temperature: Tjmax. = 150 °C
- VDRM / VRRM = 800 V
- VDSM / VRSM = 900 V
- Tight IGT spread: 5 to 8 mA
- High static immunity dV/dt = 500 V/μs at 150 °C
- High turn-on rise dI/dt at 100 A/μs
- Halogen-free molding, lead-free plating
- Insulated package TO-220AB:
- Insulated voltage: 2500 VRMS
- Complies with UL 1557 (File ref : E81734)
- • ECOPACK2 compliant
## **Applications**
**Product status** TN1605H-8I
- Inrush current limiting circuits in AC/DC converters
- General purpose AC line load switching
- Heating resistor control, solid state relays
|**Product summary**|**Product summary**|
|---|---|
|**Order code**|TN1605H-8I|
|**Package**|TO-220AB ins.|
|**IT(RMS)**|16 A|
|**VDRM/VRRM**|800 V|
|**Tj max.**|150 °C|
- Crowbar and power bus discharge circuits
## **Description**
Thanks to its operating junction temperature up to 150°C, the TN1605H-8I offers high thermal performance operation up to 16 A rms in a TO-220AB insulated package.
Its trade-off noise immunity (dV/dt = 500 V/μs) versus its gate triggering current (maximum IGT = 8 mA) and its turn-on current rise (dI/dt = 100 A/μs) allows to design robust and compact control circuit in AC/DC converters for inrush current limiting circuits and industrial drives, such as overvoltage crowbar protection, motor control circuits and power tools.
**DS14128** - **Rev 1** - **December 2022** For further information contact your local STMicroelectronics sales office.
www.st.com
**TN1605H-8I Characteristics**
**1 Characteristics**
**Table 1. Absolute maximum ratings (limiting values)**
|**Symbol**|**Parameter**|**Parameter**||**Value**|**Unit**|
|---|---|---|---|---|---|
|IT(RMS)|RMS on-state current (180° conduction angle)||TC= 118 °C|16|A|
|IT(AV)|Average on-state current (180 ° conduction angle)||TC= 118 °C|10|A|
||||TC= 127 °C|8||
||||TC= 135 °C|6||
|ITSM|Non repetitive surge peak on-state current ( Tjinitial = 25 °C)||tP= 8.3 ms|177|A|
||||tP= 10 ms|160||
|I2t|I2t value for fusing||tP= 10 ms|128|A²s|
|VDRM, VRRM|Repetitive peak off-state voltage|||800|V|
|VDSM, VRSM|Non repetitive peak off-state voltage||tP= 10 ms|VDRM/ VRRM
+ 100 V|V|
|dl/dt|Critical rate of rise of on-state current
IG= 2 x IGT, tr< 100 ns||f = 60 Hz|100|A/µs|
|IGM|Peak gate current|tp= 20 µs|Tj= 150 °C|4|A|
|PG(AV)|Average peak gate power dissipation||Tj= 150 °C|1|W|
|VRGM|Maximum peak reverse gate voltage|||5|V|
|Tstg|Storage junction temperature range|||-40 to +150|°C|
|Tj|Operating junction temperature range|||-40 to +150||
|Tl|Maximum lead temperature soldering during 10 s|||260||
|Vins|RMS insulation voltage during 1 min.|||2500|V|
**Table 2. Electrical characteristics (Tj = 25 °C unless otherwise specified)**
|**Symbol**|**Test conditions**|||**Value**|**Unit**|
|---|---|---|---|---|---|
|IGT|VD= 12 V, RL= 33 Ω||Min.|5|mA|
||||Max.|8||
|VGT||||1.3|V|
|VGD|VD= VDRM, RL= 3.3 kΩ|Tj= 150 °C|Min.|0.2|V|
|IH|IT= 500 mA, gate open||Max.|30|mA|
|IL|IG= 1.2 x IGTmax.||Max.|40|mA|
|dV/dt|VOUT= 536 V, gate open|Tj= 150 °C|Min.|500|V/µs|
|tgt|IT= 32 A, VD= 536 V, IG= 12 mA, (dIG/dt) max = 0.2 A/µs||Typ.|1.9|µs|
|tq|IT= 32 A, VD= 536 V, VR= 25 V, dVD/dt = 40 V/µs|Tj= 25 °C|Typ.|25|µs|
|||Tj= 150 °C|Typ.|85|µs|
**DS14128** - **Rev 1**
**page 2/10**
**TN1605H-8I Characteristics**
**Table 3. Static characteristics**
|**Symbol**|**Test conditions**|||**Value**|**Unit**|
|---|---|---|---|---|---|
|VTM|ITM= 32 A, tp= 380 µs|Tj= 25 °C|Max.|1.55|V|
|VTO|Threshold voltage|Tj= 150 °C|Max.|0.82||
|RD|Dynamic resistance|Tj= 150 °C|Max.|25|mΩ|
|IDRM, IRRM|VD= VDRM; VR= VRRM|Tj= 25 °C|Max.|1|µA|
|||Tj= 150 °C||3.5|mA|
**Table 4. Thermal parameters**
|**Symbol**|**Parameter**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|---|
|Rth(j-c)|Junction to case (DC)|Max.|2.2|°C/W|
|Rth(j-a)|Junction to ambient|Typ.|60||
**DS14128** - **Rev 1**
**page 3/10**
**TN1605H-8I Characteristics curves**
## **1.1 Characteristics curves**
**Figure 2. Average and DC on-state current versus caseAverage and DC on-state current versus case temperature**
**==> picture [481 x 593] intentionally omitted <==**
**----- Start of picture text -----**
Figure 1. Maximum average power dissipation versus Figure 2. Average and DC on-state current versus caseAverage and DC on-state current versus case
average on-state current temperature
16 P(W) α = 180 ° 18 IT(AV) (A)
D.C D.C
14 α = 120 ° 16
α = 90 °
12 14
α = 60 °
S ee α = 30 ° ee e 12
10 ffBREEER[JISI VA |AIee CECEPEP ERE
ee en 2 A 10 Ft tt {| [tl d[ α = 180 ° lam
8
LF | | [AJ AZSYA_Y] | Th 8 rT fost fs α = 120 ° Ne
6 ee SSS α = 90 ° EEN
7 6 i a α = 60 ° \\
4
Vg 4 α = 30 ° e e
2
2
oo r I T(AV) (A) IA Ce ce
0 Aer, 0 Pit t_LE_;_ EL L_L_LN TC ( ° C)
0 2 4 6 8 10 12 14 0 25 50 75 100 125 150
Figure 3. Average and D.C. on-state current versus
Figure 4. On-state characteristics (maximum values)On-state characteristics (maximum values)
ambient temperature
ITM (A)
I T(AV) (A) 1000.0
3.0
D.C
g e ==>
Tj = 150 °C
100.0
S SE SS SS ==
2.0 pC α = 180 ° R EEE == a ae ec
10.0
S AS SS SSS
1.0 FSS EESEE 4== SS SS SSdt
1.0
BREESE SSSIS F Tj = 25 °C aHSS | TjV max : 150°Cto = 0.82 V
0.0 S E TA( ° C) E sR 0.1 VTM (V) Se Rd = 25 mΩ
0 25 50 75 100 125 150 0.0 1.0 2.0 3.0 4.0 5.0
Relative variation of thermal impedance junction Figure 6. Surge peak on-state current versus number ofSurge peak on-state current versus number of
to case and junction to ambient versus pulse duration cycles
K=[Zth/Rth] ITSM(A)
1.0E+00 200
Zth(j-c)
VA oe Zth(j-a) 160 torre
LEU Hl fT TLL OE ELT One cycle ||
120 Non repetitive
Tj initial=25 °C
a a Cae tt
1.0E-01
0 0 a
80
Setiaeetinuaseee aetimeetiy |meet Repetitive TSECns a2
COSc TTTrn on CTTOn 40 E TC=118 °C CEERKTECT
t P(s) Number of cycles
1.0E-02 UTM TIE ELIE LATA ETI al 0 AIel
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 1 10 100 1000
**----- End of picture text -----**
**Figure 4. On-state characteristics (maximum values)On-state characteristics (maximum values)**
**Figure 5. Relative variation of thermal impedance junction to case and junction to ambient versus pulse duration**
**Figure 6. Surge peak on-state current versus number ofSurge peak on-state current versus number of cycles**
**DS14128** - **Rev 1**
**page 4/10**
**TN1605H-8I Characteristics curves**
**==> picture [513 x 402] intentionally omitted <==**
**----- Start of picture text -----**
Figure 7. Non repetitive surge peak on-state current for a Figure 8. Relative variation of holding current and
sinusoidal pulse with width tp < 10 ms latching current versus junction temperature (typical
values)
ITSM(A)
10000 dI/dt limitation : 100A/µs 2.5 I GT ,VGT [Tj] / I GT, V GT [T j = 25 ° C]
Tj initial=25 °C
IGT
1000 2.0
ITSM
1.5
100 VGT
1.0
10
0.5
1 t P (ms) 0.0 Tj( ° C)
0.01 0.10 1.00 10.00 -40 -20 0 20 40 60 80 100 120 140
Figure 9. Relative variation of gate triggering current and Figure 10. Relative variation of static dV/dt immunity
voltage versus junction temperature (typical values) versus junction temperature (typical values)
IH,IL[Tj] / IH, IL [T j = 25 ° C] dV/dt [Tj] / dV/dt [Tj=150 ° C]
2.5 10
9 VD= 536 V
IL
2.0 8
7
1.5 6
5
IH
1.0 4
3
0.5 2
1
Tj (°C) Tj (°C)
0.0 0
-40 -20 0 20 40 60 80 100 120 140 25 50 75 100 125 150
**----- End of picture text -----**
**Figure 11. Relative variation of leakage current versus junction temperature for 800 V blocking voltage**
**==> picture [218 x 153] intentionally omitted <==**
**----- Start of picture text -----**
IDRM, IRRM [VDRM, VRRM, TJ] / IDRM, IRRM, [Tj = 150°C]
1.E+00
1.E-01
1.E-02
1.E-03
25 50 75 100 125 150
= 800 V
= VRRM
VDRM
**----- End of picture text -----**
**DS14128** - **Rev 1**
**page 5/10**
**TN1605H-8I Package information**
## **2 Package information**
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
## **2.1 TO-220AB insulated package information**
- Molding compound resin is halogen-free and meets flammability standard UL94 level 0
- Lead-free package leads finishing
- ECOPACK2 compliant
- Recommended torque: 0.4 to 0.6 N.m
## **Figure 12. TO-220AB insulated package outline**
**==> picture [314 x 322] intentionally omitted <==**
**----- Start of picture text -----**
B C
b2
Resin gate 0.5 mm I
max. protusion [(1)]
L
F
A
I4
l3
c2
a1
l2
a2
M
b1 Resin gate 0.5 mm c1
max. protusion [(1)]
e
**----- End of picture text -----**
(1)Resin gate position accepted in one of the two positions or in the symmetrical opposites.
**DS14128** - **Rev 1**
**page 6/10**
**TN1605H-8I TO-220AB insulated package information**
**Table 5. TO-220AB insulated package mechanical data**
||**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|
|---|---|---|---|---|---|---|
|**Ref.**|**Millimeters**|||**Inches(1)**|||
||**Min.**|**Typ.**|**Max.**|**Min.**|**Typ.**|**Max.**|
|A|15.20||15.90|0.5984||0.6260|
|a1||3.75|||0.1476||
|a2|13.00||14.00|0.5118||0.5512|
|B|10.00||10.40|0.3937||0.4094|
|b1|0.61||0.88|0.0240||0.0346|
|b2|1.23||1.32|0.0484||0.0520|
|C|4.40||4.60|0.1732||0.1811|
|c1|0.49||0.70|0.0193||0.0276|
|c2|2.40||2.72|0.0945||0.1071|
|e|2.40||2.70|0.0945||0.1063|
|F|6.20||6.60|0.2441||0.2598|
|I|3.73||3.88|0.1469||0.1528|
|L|2.65||2.95|0.1043||0.1161|
|I2|1.14||1.70|0.0449||0.0669|
|I3|1.14||1.70|0.0449||0.0669|
|I4|15.80|16.40|16.80|0.6220|0.6457|0.6614|
|M||2.6|||0.1024||
_1. Inch dimensions are for reference only._
**DS14128** - **Rev 1**
**page 7/10**
**TN1605H-8I Ordering information**
**3 Ordering information**
## **Figure 13. Ordering information scheme**
TN 16 05 H - 8 I Series TN = SCR RMS current 16 = 16 A Gate triggering current 05 = 8 mA High temperature H = 150 °C Voltage 8 = 800 V Package I = TO-220AB insulated package Delivery mode Blank = tube
**Table 6. Ordering information**
|**Order code**|**Marking**|**Package**|**Weight**|**Base qty.**|**Delivery mode**|
|---|---|---|---|---|---|
|TN1605H-8I|TN1605H8I|TO-220AB ins.|2.3 g|50|Tube|
**DS14128** - **Rev 1**
**page 8/10**
**TN1605H-8I**
## **Revision history**
## **Table 7. Document revision history**
|**Date**|**Revision**|**Changes**|
|---|---|---|
|05-Dec-2022|1|Initial release.|
**DS14128** - **Rev 1**
**page 9/10**
**TN1605H-8I**
## **IMPORTANT NOTICE – READ CAREFULLY**
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgment.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. For additional information about ST trademarks, refer to www.st.com/trademarks. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2022 STMicroelectronics – All rights reserved
**DS14128** - **Rev 1**
**page 10/10**
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