# Thyristor, 800 V, 6 mA, 10 A, 16 A, TO-252 (DPAK), 3 Pins

![Product image](https://novapart.co/image/farnell:4262181RL/)

**URL**: https://novapart.co/products/TN1605H-8BTR/thyristor-800-v-6-ma-10-a-16-to-252-dpak-3-pins
**SKU**: TN1605H-8BTR
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || Thyristors || Thyristors - SCRs
**Price**: €0.4450
**Stock**: 1000+
**Lead Time**: 120 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Thyristor Mounting | Surface Mount |
| Holding Current Max | 20mA |
| On State Rms Current | 16A |
| Thyristor Case Style | TO-252 (DPAK) |
| Average On State Current | 10A |
| Gate Trigger Current Max | 6mA |
| Gate Trigger Voltage Max | 1.3V |
| Operating Temperature Max | 150°C |
| Peak Non Repetitive Surge Current | 153A |
| Peak Repetitive Off State Voltage | 800V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4262181RL/)

**TN1605H-8B** 

Datasheet 

**==> picture [135 x 36] intentionally omitted <==**

## 16 A 800 V high temperature SCR thyristor in DPAK package 

**==> picture [65 x 134] intentionally omitted <==**

**----- Start of picture text -----**<br>
A<br>G<br>K<br>A<br>A G<br>K<br>DPAK<br>**----- End of picture text -----**<br>


## **Features** 

- High junction temperature: Tjmax. = 150 °C 

- VDRM / VRRM = 800 V 

- VDSM / VRSM = 900 V 

- Tight IGT spread: 2 to 6 mA 

- High static immunity dV/dt = 500 V/μs at 150 °C 

- High turn-on rise dI/dt at 100 A/μs 

- Halogen-free molding, lead-free plating 

- ECOPACK2 compliant 

## **Applications** 

- Inrush current limiting circuits in AC/DC converters 

- General purpose AC line load switching 

## **Product status** 

TN1605H-8B 

- Heating resistor control, solid state relays 

- Crowbar and power bus discharge circuits 

## **Product summary** 

|**Product summary**|**Product summary**|
|---|---|
|**Order code**|TN1605H-8B|
|**Package**|DPAK|
|**IT(RMS)**|16 A|
|**VDRM/VRRM**|800 V|
|**Tj max.**|150 °C|



## **Description** 

Thanks to its operating junction temperature up to 150°C, the TN1605H-8B offers high thermal performance operation up to 16 A rms in a DPAK package. 

Its trade-off noise immunity (dV/dt = 500 V/μs) versus its gate triggering current (maximum IGT = 6 mA) and its turn-on current rise (dI/dt = 100 A/μs) allows to design robust and compact control circuit for voltage regulator in motorbikes and industrial drives, overvoltage crowbar protection, motor control circuits in power tools and kitchen appliances and inrush current limiting circuits. 

**DS14286** - **Rev 1** - **July 2023** For further information contact your local STMicroelectronics sales office. 

www.st.com 

**TN1605H-8B Characteristics** 

**1 Characteristics** 

**Table 1. Absolute maximum ratings (limiting values)** 

|**Symbol**|**Parameter**|**Parameter**||**Value**|**Unit**|
|---|---|---|---|---|---|
|IT(RMS)|RMS on-state current (180° conduction angle)||TC= 134 °C|16|A|
|IT(AV)|Average on-state current (180 ° conduction angle)||TC= 134 °C|10|A|
||||TC= 138 °C|8||
||||TC= 142 °C|6||
|ITSM|Non repetitive surge peak on-state current ( Tjinitial = 25 °C)||tP= 8.3 ms|153|A|
||||tP= 10 ms|140||
|I2t|I2t value for fusing||tP= 10 ms|98|A²s|
|VDRM, VRRM|Repetitive peak off-state voltage|||800|V|
|VDSM, VRSM|Non repetitive peak off-state voltage||tP= 10 ms|900|V|
|dl/dt|Critical rate of rise of on-state current<br>IG= 2 x IGT, tr< 100 ns||f = 60 Hz|100|A/µs|
|IGM|Peak gate current|tp= 20 µs|Tj= 150 °C|4|A|
|PG(AV)|Average peak gate power dissipation||Tj= 150 °C|1|W|
|VRGM|Maximum peak reverse gate voltage|||5|V|
|Tstg|Storage junction temperature range|||-40 to +150|°C|
|Tj|Operating junction temperature range|||-40 to +150||



**Table 2. Electrical characteristics (Tj = 25 °C unless otherwise specified)** 

|**Symbol**|**Test conditions**|**Test conditions**||**Value**|**Unit**|
|---|---|---|---|---|---|
|IGT|VD= 12 V, RL= 30 Ω||Min.|2|mA|
||||Max.|6||
|VGT||||1.3|V|
|VGD|VD= 600 V, RL= 3.3 kΩ|Tj= 150 °C|Min.|0.15|V|
|IH|IT= 500 mA, gate open||Max.|20|mA|
|IL|IG= 1.2 x IGTmax.||Max.|40|mA|
|dV/dt|VOUT= 536 V, gate open|Tj= 150 °C|Min.|500|V/µs|
|tgt|IT= 32 A, VD= 536 V, IG= 12 mA, (dIG/dt) max = 0.2 A/µs||Typ.|1.9|µs|
|tq|IT= 32 A, VD= 536 V, VR= 25 V, dVD/dt = 20 V/µs|Tj= 150 °C|Typ.|25|µs|



**DS14286** - **Rev 1** 

**page 2/11** 

**TN1605H-8B Characteristics** 

**Table 3. Static characteristics** 

|**Symbol**|**Test conditions**|||**Value**|**Unit**|
|---|---|---|---|---|---|
|VTM|ITM= 32 A, tp= 380 µs|Tj= 25 °C|Max.|1.55|V|
|VTO|Threshold voltage|Tj= 150 °C|Max.|0.9||
|RD|Dynamic resistance|Tj= 150 °C|Max.|22|mΩ|
|IDRM, IRRM|VD= VDRM, VR= VRRM|Tj= 25 °C|Max.|1|µA|
|||Tj= 150 °C||4.5|mA|
||VD= 400 V, VR= 400 V|Tj= 150 °C||1.5|mA|



**Table 4. Thermal parameters** 

|**Symbol**|**Parameter**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|---|
|Rth(j-c)|Junction to case (DC)|Max.|1.1|°C/W|
|Rth(j-a)|Junction to ambient, S(1)= 1.5 cm²|Typ.|70||



_1. S : Copper surface under DPAK tab, copper thickness 70 μm_ 

**DS14286** - **Rev 1** 

**page 3/11** 

**TN1605H-8B Characteristics curves** 

## **1.1 Characteristics curves** 

**==> picture [490 x 385] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 1. Maximum average power dissipation versus  Figure 2. Average and DC on-state current versus case<br>average on-state current temperature<br>20 P(W) ee ee 20 I Pt T(AV) (A) tt tT | EE<br>α = 180 ° D.C D.C<br>15 15<br>α = 120 °<br>|+ + α = 90 ° AZ| +4 pittye e<br>α = 60 °<br>10 α = 30 ° 10 α = 180 °<br>α = 120 °<br>alye e  // Aaa|| S EES Ey Eyy, E ATae<br>α = 90 °<br>α = 60 °<br>5 5<br>α = 30 °<br>0 ZiJo I T(AV) (A) es|e 0 PETEee, TC ( ° C)  V<br>0 5 10 15 0 25 50 TTT 75 TTT 100  TA 125 150<br>Figure 3. Average and D.C. on-state current versus<br>Figure 4. On-state characteristics (maximum values)<br>ambient temperature<br>ITM (A)<br>I T(AV)  (A) 1000.0<br>3.0 S D.C ane 100.0 ——————_<br>2.0 Tj = 150 °C<br>s il —<br>α = 180 °<br>10.0<br>P SSSCCTT= S= a<br>1.0<br>1.0<br>c = ———- Tj = 25 °C —— TjV max : 150°Cto = 0.9 V<br>0.0 POPP TA( ° C) TPS 0.1 ER VTM  [(V)] R Rd = 22 mΩ<br>0 25 50 75 100 125 150 0.0 1.0 2.0 3.0 4.0<br>**----- End of picture text -----**<br>


**Figure 5. Relative variation of thermal impedance junction to case and junction to ambient versus pulse duration** 

**Figure 6. Surge peak on-state current versus number of cycles** 

**==> picture [479 x 154] intentionally omitted <==**

**----- Start of picture text -----**<br>
K=[Zth/Rth] ITSM(A)<br>1.0E+00 150<br>Zth(j-c)<br>Zth(j-a)<br>ZH HHH SSC |<br>Non repetitive<br>100 Tj initial=25 °C<br>ST Cn ET T T a<br>1.0E-01<br>e e<br>Repetitive<br>TC=134 °C<br>ase eit mati ental men maaN RE 50 APSeamestiicesett messi<br>SHITE rt<br>0 DAES HE PH S e<br>t P(s) Number of cycles<br>1.0E-02 EINE UNIa0HEFT al 0 =aEH<br>Et<br>1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 1 10 100 1000<br>**----- End of picture text -----**<br>


**DS14286** - **Rev 1** 

**page 4/11** 

**TN1605H-8B Characteristics curves** 

**==> picture [513 x 408] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 8. Relative variation of holding current and<br>Figure 7. Non repetitive surge peak on-state current for a<br>sinusoidal pulse with width tp < 10 ms latching current versus junction temperature (typical values)<br>10000 ITSM(A) 2.5 I GT ,VGT [Tj] / I GT, V GT [T j  =  25  ° C]<br>Tj initial=25 °C<br>1000 2.0<br>ITSM IGT<br>1.5<br>100<br>1.0 VGT<br>10<br>0.5<br>1 t P(ms) Tj( ° C)<br>0.0<br>0.01 0.10 1.00 10.00<br>-40 -20 0 20 40 60 80 100 120 140<br>Figure 9. Relative variation of gate triggering current and  Figure 10. Relative variation of static dV/dt immunity<br>voltage versus junction temperature (typical values) versus junction temperature (typical values)<br>IH,IL[Tj] / IH, IL [T j = 25  ° C] dV/dt [Tj] / dV/dt [Tj=150  ° C]<br>2.5 10<br>9 VD= 536 V<br>2.0 IL 8<br>7<br>1.5 IH 6<br>5<br>1.0 4<br>3<br>0.5 2<br>1<br>Tj (°C) Tj (°C)<br>0.0 0<br>-40 -20 0 20 40 60 80 100 120 140 25 50 75 100 125 150<br>**----- End of picture text -----**<br>


**==> picture [513 x 203] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 12. Thermal resistance junction to ambient versus<br>Figure 11. Relative variation of leakage current versus<br>copper surface under tab (typical values, epoxy printed<br>junction temperature for 800 V blocking voltage<br>board FR4, eCu= 70 µm)<br>IDRM, IRRM [TJ,VDRM, VRRM ] / IDRM, IRRM, [Tj = 25°C]<br>1.E+00 Rth(j-a)(°C/W)<br>100<br>DPAK<br>90<br>80<br>1.E-01 70<br>60<br>50<br>40<br>1.E-02<br>30<br>20<br>10<br>1.E-03 Tj(°C) SCu(cm²)<br>0<br>25 50 75 100 125 150<br>0 5 10 15 20 25 30 35 40<br>= 800 V<br>= VRRM<br>VDRM<br>**----- End of picture text -----**<br>


**DS14286** - **Rev 1** 

**page 5/11** 

**TN1605H-8B Characteristics curves** 

**==> picture [487 x 182] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 13. temperature for different dv/dt reappliedRelative variation of Tq versus junction  Figure 14. Relative variation of Tq versus dv/dt reapplied<br>1.2 Aa TQ[Tj] / TQ [Tj = 150 A ° C]  SC O 1.8 T a/—_+__|—__—__}_+—_|__a Q[dv/dt ] / TQ [dv/dt = 20 V/us] Tj = 150°C<br>1.0 OOa 1.5 a QQOO<br>poof a a a<br>poof ff aaLa CC C<br>0.8<br>po 1.3 a a sO,<br>0.6 ee aGe [SEEEAE ES]<br>dv/dt = 20 V/µs eS c e t ce 1.0 aeSA<br>0.4 a a ee Aesa eeed |__|}|) __}_[ifee ffHH<br>F f [eo<br>}—f fee 0.8 el<br>0.2 }—f{afmfa a ee aa<br>po a a CC |<br>dv/dt = 5 V/µs dv/dt (V/us)<br>0.0 PO eee a Tj(°C) 0.5 5 a—_— 10 15 20 25 30<br>25 45 65 85 105 125 145<br>**----- End of picture text -----**<br>


**Figure 15. Recommended maximum case-to-ambient thermal resistance versus ambient temperature for different peak off-state voltages (for heatsink sizing to avoid thermal runaway)** 

**DS14286** - **Rev 1** 

**page 6/11** 

**TN1605H-8B Package information** 

## **2 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 

## **2.1 DPAK package information** 

- Molding compouned resin is halogen free and meets UL94 flammability standard, level V0 

- Lead-free package leads plating 

## **Figure 16. DPAK package outline** 

**==> picture [385 x 429] intentionally omitted <==**

**----- Start of picture text -----**<br>
E<br>b4 c2<br>E1<br>A1<br>e b c<br>e1<br>L<br>V2<br>A<br>2<br>L<br>D1<br>D<br>H<br>4<br>L<br>A2<br>**----- End of picture text -----**<br>


**DS14286** - **Rev 1** 

**page 7/11** 

**TN1605H-8B DPAK package information** 

**Table 5. DPAK package mechanical data** 

||**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|
|---|---|---|---|---|---|---|
|**Ref.**|**Millimeters**|||**Inches(1)**|||
||**Min.**|**Typ.**|**Max.**|**Min.**|**Typ.**|**Max.**|
|A|2.18||2.40|0.0858||0.0945|
|A1|0.90||1.10|0.0354||0.0433|
|A2|0.03||0.23|0.0012||0.0091|
|b|0.64||0.90|0.0252||0.354|
|b4|4.95||5.46|0.1949||0.2150|
|c|0.46||0.61|0.0181||0.0240|
|c2|0.46||0.60|0.0181||0.0236|
|D|5.97||6.22|0.2350||0.2449|
|D1|4.95||5.60|0.1949||0.2205|
|E|6.35||6.73|0.2500||0.2650|
|E1|4.32||5.50|0.1701||0.2165|
|e||2.286|||0.0900||
|e1|4.40||4.70|0.1732||0.1850|
|H|9.35||10.40|0.3681||0.4094|
|L|1.00||1.78|0.0394||0.0701|
|L2|||1.27|||0.0500|
|L4|0.60||1.02|0.0236||0.0402|
|V2(2)|-8°||+8°|-8°||+8°|



_1. Dimensions in inches are given for reference only_ 

_2. Degree_ 

_Note: This package drawing may slightly differ from the physical package. However, all the specified dimensions are guaranteed._ 

**Figure 17. DPAK recommended footprint (dimensions are in mm)** 

**==> picture [291 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
12.7<br>6.7 3.0 3.0<br>A<br>4.572<br>6.7<br>B<br>1.6<br>The device must be positioned within 0.05 AB<br>**----- End of picture text -----**<br>


**DS14286** - **Rev 1** 

**page 8/11** 

**TN1605H-8B Ordering information** 

**3 Ordering information** 

**Figure 18. Ordering information scheme** 

TN  16  05    H -  8     B - TR Series TN = SCR RMS current 16 = 16 A Gate triggering current 05 = 6 mA High temperature H = 150 °C Voltage 8 = 800 V Package B = DPAK package Delivery modeBlank = TubeTR = Tape and reel 

**Table 6. Ordering information** 

|**Order code**|**Marking**|**Package**|**Weight**|**Base qty.**|**Delivery mode**|
|---|---|---|---|---|---|
|TN1605H-8B|TN1605H8B|DPAK|0.35 g|2500|Tape and reel|



**DS14286** - **Rev 1** 

**page 9/11** 

**TN1605H-8B** 

## **Revision history** 

## **Table 7. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|07-Jul-2023|1|Initial release.|



**DS14286** - **Rev 1** 

**page 10/11** 

**TN1605H-8B** 

## **IMPORTANT NOTICE – READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgment. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. For additional information about ST trademarks, refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

- © 2023 STMicroelectronics – All rights reserved 

**DS14286** - **Rev 1** 

**page 11/11** 



## Links

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- [Supplier page](https://es.farnell.com/stmicroelectronics/tn1605h-8btr/thyristor-800v-153a-to-252/dp/4262181RL)
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