# Power MOSFET, DMOS, N Channel, 100 V, 350 mA, 1.6 ohm, TO-92, Through Hole

![Product image](https://novapart.co/image/farnell:2920771/)

**URL**: https://novapart.co/products/TN0110N3-G/power-mosfet-dmos-n-channel-100-v-350-ma-16-ohm-to
**SKU**: TN0110N3-G
**Manufacturer**: MICROCHIP
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.7030
**Stock**: 10+
**Lead Time**: 36 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:350mA; Drain Source Voltage Vds:100V; On Resistance Rds(on):1.6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Po

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (04-Feb-2026) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-92 |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 350mA |
| Drain Source On State Resistance | 1.6ohm |
| Gate Source Threshold Voltage Max | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2920771/)

_**Su ertex inc. p**_ 

**TN0110** 

## **N-Channel Enhancement-Mode** ~~oo~~ **Vertical DMOS FET Features General Description** ► Low threshold - 2.0V max. 

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. 

- High input impedance 

- Low input capacitance - 50pF typical 

- Fast switching speeds 

- Low on-resistance 

- Free from secondary breakdown 

- Low input and output leakage 

## **Applications** 

- Logic level interfaces – ideal for TTL and CMOS 

Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. 

- Solid state relays 

- Battery operated systems 

- Photo voltaic drives 

- Analog switches 

- General purpose line drivers 

- Telecom switches 

**Ordering Information Product Summary Part Number Package Option Packing BV /BV RDS(ON) ID(ON) VGS(th) DSS DGS** TN0110N3-G TO-92 1000/Bag **(max) (min) (max)** 100V 3.0Ω 2.0A 2.0V TN0110N3-G P002 TN0110N3-G P003 TN0110N3-G P005 TO-92 2000/Reel **Pin Configuration** TN0110N3-G P013 TN0110N3-G P014 ~~fib.~~ _-G denotes a lead (Pb)-free / RoHS compliant package._ ~~=~~ _Contact factory for Wafer / Die availablity. Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant._ **DRAIN SOURCE Absolute Maximum Ratings GATE Parameter Value TO-92** Drain-to-source voltage BVDSS Drain-to-gate voltage BVDGS **Product Marking** Gate-to-source voltage ±20V ~~==}~~ Operating and storage temperature -55[O] C to +150[O] C **SiTN** YY = Year Sealed _Absolute Maximum Ratings are those values beyond which damage to the device may_ **0 1 1 0** WW = Week Sealed _occur. Functional operation under these conditions is not implied. Continuous operation_ **Y Y W W** = “Green” Packaging _of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. Package may or may not include the following marks: Si or_ **TO-92 Typical Thermal Resistance Package** _**θja**_ TO-92 132[O] C/W ~~—_~~ _Doc.# DSFP-TN0110_ _**Supertex inc.** C080813_ _**www.supertex.com**_ 

**TN0110** 

## **Thermal Characteristics** 

|**Package**|**ID**<br>**(continuous)****_†_**|**ID**<br>**(pulsed)**|**Power Dissipation**<br>**@TC = 25OC**|**IDR**<br>**_†_**|**IDRM**|
|---|---|---|---|---|---|
|TO-92|350mA|2.0A|1.0W|350mA|2.0A|



_**Notes:**_ 

_†   ID (continuous) is limited by max rated Tj ._ 

## **Electrical Characteristics** _**(TA = 25[O] C unless otherwise specified)**_ 

|**Sym**|**Parameter**|**Min**|**Typ**|**Max**|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|BVDSS|Drain-to-source breakdown voltage|100|-|-|V|VGS= 0V, ID= 1.0mA|
|VGS(th)|Gate threshold voltage|0.6|-|2.0|V|VGS= VDS, ID= 0.5mA|
|ΔVGS(th)|Change in VGS(th)with temperature|-|-3.2|-5.0|mV/OC|VGS= VDS, ID= 1.0mA|
|IGSS|Gate body leakage|-|-|100|nA|VGS= ± 20V, VDS= 0V|
|IDSS|Zero Gate voltage drain current|-|-|10|µA|VGS= 0V, VDS= Max Rating|
|||-|-|500|µA|VGS= 0V, VDS= 0.8 Max Rat-<br>ing, TA= 125°C|
|ID(ON)|ON-state drain current|0.75|1.4|-|A|VGS= 5.0V, VDS= 25V|
|||2.0|3.4|-||VGS= 10V, VDS= 25V|
|RDS(ON)|Static drain-to-source on-state resistance|-|2.0|4.5|Ω|VGS= 4.5V, ID= 250mA|
|||-|1.6|||VGS= 10V, ID= 500mA|
|ΔRDS(ON)|Change in RDS(ON)with temperature|-||||VGS= 10V, ID= 500mA|
|GFS|Forward transductance|225|400||mmho  V|mmho  VDS= 25V, ID= 500mA|
|CISS|Input capacitance|-|50|60|pF|VGS= 0V,<br>VDS= 25V,<br>f = 1.0MHz|
|COSS|Common source output capacitance|-|25|35|||
|CRSS|Reverse transfer capacitance|-|4.0|8.0|||
|td(ON)|Turn-on delay time|-|2.0|5.0|ns|VDD= 25V,<br>ID= 1.0A,<br>RGEN= 25Ω|
|tr|Rise time|-|3.0|5.0|||
|td(OFF)|Turn-off delay time|-|6.0|7.0|||
|tf|Fall time|-|3.0|6.0|||
|VSD|Diode forward voltage drop||1.0|1.5|V|VGS= 0V, ISD= 500mA|
|trr|Reverse recovery time|-|400|-|ns|VGS= 0V, ISD= 500mA|



_**Notes:**_ 

_1. All D.C. parameters 100% tested at 25[O] C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)_ 

_2. All A.C. parameters sample tested._ 

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**----- Start of picture text -----**<br>
Switching Waveforms and Test Circuit<br>10V 90%  VDD<br>INPUT Pulse R<br>10% Generator L<br>0V OUTPUT<br>t t<br>(ON)  (OFF)  R<br>GEN<br>td(ON)  tr  td(OFF) tf<br>VDD INPUT D.U.T.<br>10%  10%<br>OUTPUT<br>0V — 90%  90%  _<br>Doc.# DSFP-TN0110<br>C080813 2<br>**----- End of picture text -----**<br>


_**Supertex inc. www.supertex.com**_ 

**TN0110** 

## **Typical Performance Curves** 

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Output Characteristics<br>**----- End of picture text -----**<br>


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5.0<br>4.0<br>VGS = 10V<br>3.0<br>8V<br>2.0<br>6V<br>1.0<br>4V<br>2V<br>0<br>0                 10                20                 30               40                 50<br>VDS (volts)<br>(amperes)<br>ID<br>**----- End of picture text -----**<br>


## **Transconductance vs. Drain Current** 

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**----- Start of picture text -----**<br>
0.5<br>TA = -55 [O] C<br>0.4<br>TA = 25 [O] C<br>0.3  TA = 150 [O] C<br>0.2<br>0.1<br>VDS = 25V<br>0<br>0                 0.6               1.2               1.8                2.4               3.0<br>ID (amperes)<br>(siemens)<br>FS<br>G<br>**----- End of picture text -----**<br>


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Maximum Rated Safe Operating Area<br>10<br>TC = 25 [O] C<br>TO-92 (pulsed)<br>1.0<br>TO-92 (DC)<br>0.1<br>0.01<br>1.0                            10                             100                           1000<br>VDS (volts)<br>(amperes)<br>ID<br>**----- End of picture text -----**<br>


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Saturation Characteristics<br>**----- End of picture text -----**<br>


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5.0<br>4.0<br>VGS = 10V<br>3.0<br>8V<br>2.0<br>6V<br>1.0<br>4V<br>2V<br>0<br>0                 2.0               4.0                6.0               8.0               10<br>VDS (volts)<br>Power Dissipation vs. Case Temperature<br>2.0<br>TO-92<br>1.0<br>0<br>0              25             50            75            100           125          150<br>TC ( [O] C)<br>Thermal Response Characteristics<br>1.0<br>0.8<br>0.6<br>0.4<br>TO-92<br>0.2  TC = 25 [O] C<br>PD = 1W<br>0<br>0.001                 0.01                   0.1                    1.0                     10<br>tp (seconds)<br>(amperes)<br>ID<br>(watts)<br>D<br>P<br>Thermal Resistance (normalized)<br>**----- End of picture text -----**<br>


_**Supertex inc.**_ 

_Doc.# DSFP-TN0110 C080813_ 

_**www.supertex.com**_ 

3 

**TN0110** 

## **Typical Performance Curves** _**(cont.)**_ 

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BVDSS Variation with Temperature<br>**----- End of picture text -----**<br>


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1.3<br>1.2<br>1.1<br>1.0<br>0.9<br>0.8<br>-50                    0                     50                   100                  150<br>(normalized)<br>DSS<br>BV<br>**----- End of picture text -----**<br>


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Tj ( [O] C)<br>**----- End of picture text -----**<br>


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Transfer Characteristics<br>3.0<br>VDS = 25V<br>TA = -55 [O] C<br>2.4<br>25 [O] C<br>1.8<br>150 [O] C<br>1.2<br>0.6<br>0<br>0                 2.0              4.0              6.0              8.0              10<br>VGS (volts)<br>(amperes)<br>ID<br>**----- End of picture text -----**<br>


## **Capacitance vs. Drain-to-Source Voltage** 

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100<br>f = 1.0MHz<br>75<br>CISS<br>50<br>COSS<br>25<br>CRSS<br>0<br>0                    10                    20                    30                    40<br>VDS (volts)<br>C (picofarads)<br>**----- End of picture text -----**<br>


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On-Resistance vs. Drain Current<br>5.0<br>4.0  VGS = 5.0V  VGS = 10V<br>3.0<br>2.0<br>1.0<br>0<br>0                1.0              2.0              3.0              4.0              5.0<br>ID (amperes)<br>V(th) and RDS Variation with Temperature<br>1.4  1.4<br>1.2  V(th) @ 0.5mA  1.2<br>1.0  1.0<br>RDS(ON) @ 10V, 0.5A<br>0.8  0.8<br>0.6  0.6<br>0.4  0.4<br>-50                     0                     50                  100                  150<br>Tj ( [O] C)<br>Gate Drive Dynamic Characteristics<br>10<br>VDS = 10V<br>8.0<br>VDS = 40V<br>6.0<br>4.0<br>2.0<br>50pF<br>0<br>0                1.0              2.0              3.0              4.0              5.0<br>QG (nanocoulombs)<br>55pF<br>(ohms)<br>DS(ON)<br>R<br>(normalized) (normalized)<br>VGS(th)  RDS(ON)<br>(volts)<br>GS<br>V<br>**----- End of picture text -----**<br>


_**Supertex inc.**_ 

_Doc.# DSFP-TN0110 C080813_ 

_**www.supertex.com**_ 

4 

**TN0110** 

## **3-Lead TO-92 Package Outline (N3)** 

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D<br>A<br>Seating<br>Plane 1     2     3<br>L<br>b c<br>e1<br>e<br>Front View  Side View<br>E<br>E1<br>1 3<br>2<br>**----- End of picture text -----**<br>


## **Bottom View** 

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Symbol A b c D E E1 e e1 L<br>MIN .170 .014 [†] .014 [†] .175 .125 .080 .095 .045 .500<br>Dimensions<br>NOM - - - - - - - - -<br>(inches)<br>MAX .210 .022 [†] .022 [†] .205 .165 .105 .105 .055 .610*<br>**----- End of picture text -----**<br>


_JEDEC Registration TO-92. * This dimension is not specified in the JEDEC drawing._ 

_† This dimension differs from the JEDEC drawing._ 

## _**Drawings not to scale.**_ 

_**Supertex Doc.#:** DSPD-3TO92N3, Version E041009._ 

_(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.)_ 

_**Supertex inc.**_ does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” _**Supertex inc.**_ does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the _**Supertex inc.**_ (website: http//www.supertex.com) 

©2013 _**Supertex inc.**_ All rights reserved. Unauthorized use or reproduction is prohibited. 

_**Supertex inc.**_ 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 _**www.supertex.com**_ 

_Doc.# DSFP-TN0110 C080813_ 

5 



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