# Power MOSFET, N Channel, 40 V, 450 mA, 1.5 ohm, TO-92, Through Hole

![Product image](https://novapart.co/image/farnell:2851614/)

**URL**: https://novapart.co/products/TN0104N3-G/power-mosfet-n-channel-40-v-450-ma-15-ohm-to-92
**SKU**: TN0104N3-G
**Manufacturer**: MICROCHIP
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.6420
**Stock**: 200+
**Lead Time**: 36 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:450mA; Drain Source Voltage Vds:40V; On Resistance Rds(on):1.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V;

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (04-Feb-2026) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-92 |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 450mA |
| Drain Source On State Resistance | 1.5ohm |
| Gate Source Threshold Voltage Max | 1.6V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2851614/)

**TN0104** 

## _**Su ertex inc. p**_ **N-Channel Enhancement-Mode** ~~So~~ **Vertical DMOS FET Features General Description** ► Low threshold (1.6V max.) 

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. 

- High input impedance 

- Low input capacitance 

- Fast switching speeds 

- Low on-resistance 

- Free from secondary breakdown 

- Low input and output leakage 

## **Applications** 

- Logic level interfaces – ideal for TTL and CMOS 

Supertex’s vertical DMOS FETs are ideally suited to a wide ► Solid state relays range of switching and amplifying applications where very ► Battery operated systems low threshold voltage, high breakdown voltage, high input ► Photo voltaic drives impedance, low input capacitance, and fast switching speeds ► Analog switches are desired. ► General purpose line drivers ► Telecom switches **Ordering Information Product Summary Part Number Package Option Packing BV /BV RDS(ON) IDSS DSX DGX** TN0104N3-G TO-92 1000/Bag **(max) (min)** 40V 1.8Ω 2.0A TN0104N3-G P002 TN0104N3-G P003 TN0104N3-G P005 TO-92 2000/Reel **Pin Configuration** TN0104N3-G P013 TN0104N3-G P014 **DRAIN** TN0104N8-G TO-243AA (SOT-89) 2000/Reel **DRAIN** _-G denotes a lead (Pb)-free / RoHS compliant package. Contact factory for Wafer / Die availablity._ **SOURCE SOURCE** _Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant._ ~~—~~ **DRAIN Absolute Maximum Ratings GATE GATE Parameter Value TO-92 TO-243AA (SOT-89)** Drain-to-source voltage BVDSS Drain-to-gate voltage BVDGS **Product Marking** Gate-to-source voltage ±20V **SiTN** YY = Year Sealed Operating and storage temperature -55[O] C to +150[O] C **0 1 0 4** WW = Week Sealed _Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation_ **Y Y W W** = “Green” Packaging ~~——S a.~~ _of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. Package may or may not include the following marks: Si or_ **TO-92** 

## **Typical Thermal Resistance** 

W = Code for Week Sealed **Package** _**θja**_ **TN1LW** = “Green” Packaging TO-92 132[O] C/W _Package may or may not include the following marks: Si or_ ~~—~~ TO-243AA (SOT-89) 133[O] C/W ~~=~~ **TO-243AA (SOT-89)** _Doc.# DSFP-TN0104 C080813_ 

_**Supertex inc. www.supertex.com**_ 

**TN0104** 

**Thermal Characteristics Package (continuous)ID** _**[†]**_ **(pulsed)ID Power Dissipation@TC = 25[O] C IDR** _**†**_ **IDRM** TO-92 450mA 2.40A 1.0W 450mA 2.40A TO-243AA (SOT-89) 630mA 2.90A 1.6W _[‡]_ 630mA 2.90A ~~———~~ _**Notes:** †     ID (continuous) is limited by max rated Tj ._ 

- _TA = 25°C. Mounted on FR5 Board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate._ 

## **Electrical Characteristics** _(TA = 25[O] C unless otherwise specified)_ 

|**Sym**|**Parameter**|**Parameter**|**Min**|**Typ**|**Max**|**Units**|**Conditions**|
|---|---|---|---|---|---|---|---|
|BVDSS|Drain-to-source breakdown voltage||40|-|-|V|VGS= 0V, ID= 1.0mA|
|VGS(th)|Gate threshold voltage||0.6|-|1.6|V|VGS= VDS, ID= 500µA|
|ΔVGS(th)|Change in VGS(th)with temperature||-|-3.8|-5.0|mV/OC|VGS= VDS, ID= 1.0mA|
|IGSS|Gate body leakage||-|0.1|100|nA|VGS= ± 20V, VDS= 0V|
|IDSS|Zero gate voltage drain current||-|-|1.0|µA|VGS= 0V, VDS= Max Rating|
||||-|-|100||VDS= 0.8 Max Rating,<br>VGS= 0V, TA= 125°C|
|ID(ON)|On-state drain current||-|0.35|-|A|VGS= 3.0V, VDS= 20V|
||||0.5|1.1|-||VGS= 5.0V, VDS= 20V|
||||2.0|2.6|-||VGS= 10V, VDS= 20V|
|RDS(ON)|Static drain-to-source<br>on-state resistance|Both packages|-|5.0|-|Ω|VGS= 3.0V, ID= 50mA|
||||-|2.3|2.5||VGS= 5.0V, ID= 250mA|
|||TO-92|-|1.5|1.8||VGS= 10V, ID= 1.0A|
|||TO-243AA|-|-||||
|ΔRDS(ON)|Change in RDS(ON)with temperature||-||||VGS= 10V, ID= 1.0A|
|GFS|Forward transductance||340|450||mmho  V|mmho  VDS= 20V, ID= 500mA|
|CISS|Input capacitance||-|-|70|pF|VGS= 0V,<br>VDS= 20V,<br>f = 1.0MHz|
|COSS|Common source output capacitance||-|-|50|||
|CRSS|Reverse transfer capacitance||-|-|15|||
|td(ON)|Turn-on delay time||-|3.0|5.0|ns|VDD= 20V,<br>ID= 1.0A,<br>RGEN= 25Ω|
|tr|Rise time||-|7.0|8.0|||
|td(OFF)|Turn-off delay time||-|6.0|9.0|||
|tf|Fall time||-|5.0|8.0|||
|VSD|Diode forward voltage<br>drop|TO-92|-|1.2|1.8|V|VGS= 0V, ISD= 1.0A|
|||TO-243AA|-|-|2.0||VGS= 0V, ISD= 0.5A|
|trr|Reverse recovery time||-|300|-|ns|VGS= 0V, ISD= 1.0A|



_**Notes:**_ 

_1. All D.C. parameters 100% tested at 25[O] C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)_ 

_2. All A.C. parameters sample tested._ 

_**Supertex inc. www.supertex.com**_ 

_Doc.# DSFP-TN0104 C080813_ 

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**TN0104** 

## **Switching Waveforms and Test Circuit** 

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**----- Start of picture text -----**<br>
10V 90%  VDD<br>INPUT Pulse R<br>10% Generator L<br>0V OUTPUT<br>t t<br>(ON)  (OFF)  R<br>GEN<br>td(ON)  tr  td(OFF) tf<br>VDD INPUT D.U.T.<br>10%  10%<br>OUTPUT<br>0V 90%  90%<br>**----- End of picture text -----**<br>


_**Supertex inc. www.supertex.com**_ 

_Doc.# DSFP-TN0104 C080813_ 

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**TN0104** 

## **Typical Performance Curves** 

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Output Characteristics<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
3.75<br>3.00<br>VGS = 10V<br>2.25<br>8V<br>1.50  6V<br>0.75  4V<br>2V<br>0<br>0                    10                      20                      30                      40<br>VDS (volts)<br>(amperes)<br>ID<br>**----- End of picture text -----**<br>


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Saturation Characteristics<br>3.75<br>3.00<br>2.25  VGS = 10V<br> 8V<br>1.50<br>6V<br>0.75<br>4V<br>2V<br>0<br>0                  2                  4                  6                   8                 10<br>VDS (volts)<br>(amperes)<br>ID<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Transconductance vs. Drain Current Power Dissipation vs. Case Temperature<br>0.75  5<br>VDS = 25V  (TA = 25 [O] C)<br>TA = -55 [O] C<br>0.60  4<br>0.45  TA = 25 [O] C  3<br>TA = 125 [O] C<br>0.30  2<br>TO-243AA<br>0.15  1  TO-92<br>0  0<br>0                 0.5               1.0               1.5                2.0              2.5    0              25             50             75           100           125           150<br>ID (amperes) TC ( [O] C)<br>10  Maximum Rated Safe Operating Area 1.0  Thermal Response Characteristics<br>0.8<br>0.0  TO-92 (DC)  TO-243AA<br>TO-243AA (DC)  0.6  PTD A = 1.6W = 25 [O] C<br>0.4<br>0.1<br>0.2  TO-92<br>PD = 1.0W<br>(TA = 25 [O] C)  TC = 25 [O] C<br>0.01 0.1                            1.0                             10                             100  0 0.001               0.01                   0.1                    1.0                     10<br>VDS (volts) tP (seconds)<br>(watts)<br>(siemens) D<br>FS  P<br>G<br>(amperes)<br>ID<br>Thermal Resistance (normalized)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Power Dissipation vs. Case Temperature<br>**----- End of picture text -----**<br>


_**Supertex inc.**_ 

_Doc.# DSFP-TN0104 C080813_ 

_**www.supertex.com**_ 

4 

**TN0104** 

## **Typical Performance Curves** _**(cont.)**_ 

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**----- Start of picture text -----**<br>
BVDSS Variation with Temperature<br>**----- End of picture text -----**<br>


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1.3<br>1.2<br>1.1<br>1.0<br>0.9<br>0.8<br>-50                     0                     50                  100                  150<br>Tj ( [O] C)<br>(normalized)<br>DSS<br>BV<br>**----- End of picture text -----**<br>


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Transfer Characteristics<br>3.0<br>VDS = 25V<br>2.4<br>1.8<br>1.2<br>0.6<br>0<br>0                  2                 4                 6                 8                 10<br>VGS (volts)<br>TA = -55OC<br>25OC<br>125OC<br>(amperes)<br>ID<br>**----- End of picture text -----**<br>


## **Capacitance vs. Drain-to-Source Voltage** 

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**----- Start of picture text -----**<br>
100<br>f = 1MHz<br>75<br>CISS<br>50<br>25<br>CRSS<br>0<br>0                     10                     20                   30                    40<br>VDS (volts)<br>COSS<br>C (picofarads)<br>**----- End of picture text -----**<br>


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On-Resistance vs. Drain Current<br>**----- End of picture text -----**<br>


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10<br>VGS = 5.0V<br>8<br>6<br>VGS = 10V<br>4<br>2<br>0 0                                              1                                              2<br>ID (amperes)<br>V(th) and RDS Variation with Temperature<br>1.4  1.4<br>1.2  1.2<br>1.0  RDS(ON) @ 5.0V, 0.25A  1.0<br>0.8  V(th) @ 0.5mA  0.8<br>0.6  0.6<br>0.4  0.4<br>-50                     0                     50                   100                 150<br>Tj ( [O] C)<br>Gate Drive Dynamic Characteristics<br>10<br>VDS = 10V<br>8<br>55pF<br>40V<br>6<br>4<br>2<br>50pF<br>0<br>0.50            0.65           0.80            0.95            1.10            1.25<br>QG (nanocoulombs)<br>(Ω)<br>DS(ON)<br>R<br>(normalized) (normalized)<br>VGS(th)  DS(ON)<br>R<br>(volts)<br>GS<br>V<br>**----- End of picture text -----**<br>


_**Supertex inc.**_ 

_Doc.# DSFP-TN0104 C080813_ 

_**www.supertex.com**_ 

5 

**TN0104** 

## **3-Lead TO-92 Package Outline (N3)** 

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D<br>A<br>Seating<br>Plane 1     2     3<br>L<br>b c<br>e1<br>e<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Front View<br>E<br>E1<br>1 3<br>2<br>**----- End of picture text -----**<br>


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Side View<br>**----- End of picture text -----**<br>


**Bottom View** 

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**----- Start of picture text -----**<br>
Symbol A b c D E E1 e e1 L<br>MIN .170 .014 [†] .014 [†] .175 .125 .080 .095 .045 .500<br>Dimensions<br>NOM - - - - - - - - -<br>(inches)<br>MAX .210 .022 [†] .022 [†] .205 .165 .105 .105 .055 .610*<br>**----- End of picture text -----**<br>


_JEDEC Registration TO-92. * This dimension is not specified in the JEDEC drawing._ 

_† This dimension differs from the JEDEC drawing._ 

_**Drawings not to scale.**_ 

_**Supertex Doc.#:** DSPD-3TO92N3, Version E041009._ 

_**Supertex inc. www.supertex.com**_ 

_Doc.# DSFP-TN0104 C080813_ 

6 

**TN0104** 

## **3-Lead TO-243AA (SOT-89) Package Outline (N8)** 

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**----- Start of picture text -----**<br>
D<br>D1<br>E H<br>1  2  3<br>L<br>b  b1<br>e<br>e1<br>**----- End of picture text -----**<br>


## **Top View** 

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**----- Start of picture text -----**<br>
C<br>E1<br>A<br>**----- End of picture text -----**<br>


## **Side View** 

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**----- Start of picture text -----**<br>
Symbol A b b1 C D D1 E E1 e e1 H L<br>MIN 1.40 0.44 0.36 0.35 4.40 1.62 2.29 2.00 [†] 3.94 0.73 [†]<br>Dimensions 1.50 3.00<br>NOM - - - - - - - - - -<br>(mm) BSC BSC<br>MAX 1.60 0.56 0.48 0.44 4.60 1.83 2.60 2.29 4.25 1.20<br>**----- End of picture text -----**<br>


_JEDEC Registration TO-243, Variation AA, Issue C, July 1986._ 

_**†** This dimension differs from the JEDEC drawing_ 

_**Drawings not to scale** ._ 

_**Supertex Doc. #:** DSPD-3TO243AAN8, Version F111010._ 

_(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.)_ 

_**Supertex inc.**_ does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” _**Supertex inc.**_ does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the _**Supertex inc.**_ (website: http//www.supertex.com) 

> ©2013 _**Supertex inc.**_ All rights reserved. Unauthorized use or reproduction is prohibited. 

_**Supertex inc.**_ 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 _**www.supertex.com**_ 

_Doc.# DSFP-TN0104 C080813_ 

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---

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