TMMBAT48FILM
Small Signal Schottky Diode, Single, 40 V, 350 mA, 900 mV, 7.5 A, 125 °C
- Manufacturer: STMICROELECTRONICS
- Product type:
- Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:40V; Forward Current If(AV):350mA; Forward Voltage VF Max:900mV; Forward Surge Current; Available until stocks are exhausted
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 2Pins
- Product Range: TMMBA
- Qualification: -
- Diode Mounting: Surface Mount
- Diode Case Style: SOD-80 (MiniMELF)
- Diode Configuration: Single
- Forward Voltage Max: 900mV
- Forward Surge Current: 7.5A
- Reverse Recovery Time: 10ns
- Average Forward Current: 350mA
- Operating Temperature Max: 125°C
- Repetitive Peak Reverse Voltage: 40V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.037 € |
| Current stock | 1000+ |
| Lead time | 30 days |
## eee kw, SGS-THOMSON TMMBAT 47 YA. MicRozLecrROMCS TMMBAT 48 eee ## see DESCRIPTION General purpose, metal to silicon diodes featuring very low turn-on voltage and fast switching. These devices have integrated protection against excessive voltage such as electrostaticdischarges. **==> picture [42 x 21] intentionally omitted <==** **----- Start of picture text -----**<br> MiGiass)<br>**----- End of picture text -----**<br> ## ABSOLUTE RATINGS (limiting values) **==> picture [459 x 147] intentionally omitted <==** **----- Start of picture text -----**<br> |||||||||| |---|---|---|---|---|---|---|---|---| |||Symbot ||Parameter|«| TMMBATA7|||TMMBAT@@|||Unit||| ||__Varw|| Repetitive Peak Reverse Votage|||Tw]|CS| ||__| Forward Continvous Curent|tima5ec|||a0|SS*dCm| |IFAM|Repetitive|Peak Fordward|Current|tp|s|1s|1|A| |§s05| |lFsm|Surge non|Repetitive|Forward|Current|A| |Tstg|Storage and|Junction Temperature|Range|- 65 to|150|°C| |Tj|- 65 to|125|°C| **----- End of picture text -----**<br> ## THERMAL RESISTANCE | Symbot | Testconaions **==> picture [173 x 27] intentionally omitted <==** **----- Start of picture text -----**<br> Value «Ct<br>**----- End of picture text -----**<br> November 1994 15 ee.) Me 7929237 OOVbLOle OCT TMMBAT 47/TMMBAT 48 ## eee ## ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS **==> picture [508 x 514] intentionally omitted <==** **----- Start of picture text -----**<br> | Symbol | TestConditions | Mins | Typ, | Max. | Uni |<br>ee<br>ve [Ts2c a=awa [ Twparas [ao | |<br>All Types ee<br>a<br>| [oa]<br>TeaTs7 | | |os |<br>a oe |<br>a<br>ai<br>All | [to] aee|<br>a Types aeeeee ee<br>rn Va=10V a a<br>eeVa=20V | to |<br>Va = 10V a | |<br>a ee<br>| [Ts] |<br>a<br>a<br>| [tf] |<br>DYNAMIC CHARACTERISTICS<br>_Symbot [| TestConditions | min. | Typ. | Max. | Unit |<br>te [te250 stoma Vvawiv we tmateimizri=tooa]|ee|| co0 [| | os |<br>* Pulse test: tp< 300us 5 < 2%,<br>**----- End of picture text -----**<br> “5[——____________][&] ses-THomson ME 7929237 0076013 Thh CIBAATTMMBAT 47/TMMBATAT IMBAT 4848 eee voltageFigure 1.atForwarddifferentcurrenttemperaturesversus forward(typical values). **==> picture [180 x 564] intentionally omitted <==** **----- Start of picture text -----**<br> toa TE (ma)<br>eeSeTGoeee<br>re a aS<br>AA<br>4 oo<br>« ERAT<br>RRS: ee<br>7Ana arealT= 25°C<br>» ftOf en a ne ee ee<br>(fi<br>oil LIT<br>0 0.2 0.4 0.6 OB 1 |4.2<br>3. Reverse current versus<br>1093 In_tpa)<br>(50% confidence =<br>a<br>ve Fe<br>[Com nner a |<br>| ley<br>» eA<br>ne Pe a es<br>ay ae<br>fe ee 4 ee ee<br>ffee Ae — ee<br>a ee ee ee<br>Ee eS ee<br>SOUR SN CE<br>a ee ee ee ee<br>well)0 | 4) @a |<br>25 50 75 100 125<br>**----- End of picture text -----**<br> Figure 3. Reverse current versus junction temperature. voltageFigure (typical2. Forward values),current versus fonward **==> picture [169 x 229] intentionally omitted <==** **----- Start of picture text -----**<br> 500 2£ imal<br>peeredT; = 25°C<br>a phTT EU I<br>SERERSER<br>SEGRE REP an<br>CECA Ye<br>200 LTT TTA/<br>100 titi iALif Ly<br>+ALL<br>0 BESZ6RRRe49.2 0.4 Q.6 0.8 4<br>**----- End of picture text -----**<br> Figure 4. Reverse current versus continuous reverse voltage (typical values). **==> picture [178 x 228] intentionally omitted <==** **----- Start of picture text -----**<br> Ip (pA)<br>O° See<br>a es ee Ss we i Wee?<br>a<br>we eet<br>| | |<br>a<br>ee ee<br>Cad ee ee ee<br>fe eo<br>pFee eees— 29°C<br>| et} TT<br>‘SE ee ee ee ee<br>Ssee<br>a ee<br>Lt<br>we Ll TL [a I<br>Qa 10 20 30 49<br>**----- End of picture text -----**<br> M@ 7929237 OO7bO14 4Te = TMMBAT 47/TMMBAT 48 Figure 5. Capacitance C versus reverse applied voltage Vr (typical values). **==> picture [163 x 233] intentionally omitted <==** **----- Start of picture text -----**<br> C iF}<br>“CLT<br>«ttt tt<br>Hee<br>; Pe ttt<br>AREEE EEE<br>leada<br>PSHESERtae<br>CEPT fe<br>o 10 20 30 40<br>**----- End of picture text -----**<br> Me 7929237 0076015 635 TMMBAT 47/TMMBAT 48 ## a PACKAGE MECHANICAL DATA FOOT PRINT DIMENSIONS (Milimeter) **==> picture [76 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> MINIMELF Glass<br>**----- End of picture text -----**<br> **==> picture [340 x 139] intentionally omitted <==** **----- Start of picture text -----**<br> i | 2.5<br>c c 5<br>re [ Min.i| Max. | Min, | Max. _<br>0.130<br>[|B 1159 [1.62 | 0.063<br>fc jos jos | ooi6 __| 0.020<br>**----- End of picture text -----**<br> Marking: ring at cathode end. Weight: 0.05g Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or othemise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 8GS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. © 1994 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea- Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - United Kingdom - U.S.A. 5/5 Gy7_ SGS-THOMSON 5/5 @ 792923? OO7bO1b 775
Updated at April 29, 2026
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