# Power MOSFET, N Channel, 500 V, 7 A, 1 ohm, TO-252 (DPAK), Surface Mount
**URL**: https://novapart.co/products/TK7P50D(T6RSS-Q)/power-mosfet-n-channel-500-v-7-a-1-ohm-to-252-dpak
**SKU**: TK7P50D(T6RSS-Q)
**Manufacturer**: TOSHIBA
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4960
**Stock**: 1000+
**Lead Time**: 134 days (indicative)
## Specifications
| Parameter | Value |
|---|---|
| Svhc | To Be Advised |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 100W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 500V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 7A |
| Drain Source On State Resistance | 1ohm |
| Gate Source Threshold Voltage Max | 4.4V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:4173159/)
TK7P50D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
## **TK7P50D**
## Switching Regulator Applications
|
Low drain-source ON-resistance: RDS (ON)= 1.0 Ω (typ.)
High forward transfer admittance:⎪Yfs⎪= 2.5 S (typ.)
Low leakage current: IDSS= 10 μA (max) (VDS= 500 V)
Enhancement-mode: Vth= 2.4 to 4.4 V (VDS= 10 V, ID= 1 mA)
**bsolute Maximum Ratings(Ta**=**25°C)**
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
500
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
7
Drain current
Pulse (t=1 ms)
(Note 1)
IDP
28
A
Drain power dissipation (Tc=25°C)
PD
100
W
Single pulse avalanche energy
(Note 2)
EAS
105
mJ
Avalanche current
IAR
7
A
Repetitive avalanche energy (Note 3)
EAR
10
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C|
Low drain-source ON-resistance: RDS (ON)= 1.0 Ω (typ.)
High forward transfer admittance:⎪Yfs⎪= 2.5 S (typ.)
Low leakage current: IDSS= 10 μA (max) (VDS= 500 V)
Enhancement-mode: Vth= 2.4 to 4.4 V (VDS= 10 V, ID= 1 mA)
**bsolute Maximum Ratings(Ta**=**25°C)**
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
500
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
7
Drain current
Pulse (t=1 ms)
(Note 1)
IDP
28
A
Drain power dissipation (Tc=25°C)
PD
100
W
Single pulse avalanche energy
(Note 2)
EAS
105
mJ
Avalanche current
IAR
7
A
Repetitive avalanche energy (Note 3)
EAR
10
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C|
Low drain-source ON-resistance: RDS (ON)= 1.0 Ω (typ.)
High forward transfer admittance:⎪Yfs⎪= 2.5 S (typ.)
Low leakage current: IDSS= 10 μA (max) (VDS= 500 V)
Enhancement-mode: Vth= 2.4 to 4.4 V (VDS= 10 V, ID= 1 mA)
**bsolute Maximum Ratings(Ta**=**25°C)**
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
500
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
7
Drain current
Pulse (t=1 ms)
(Note 1)
IDP
28
A
Drain power dissipation (Tc=25°C)
PD
100
W
Single pulse avalanche energy
(Note 2)
EAS
105
mJ
Avalanche current
IAR
7
A
Repetitive avalanche energy (Note 3)
EAR
10
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C|
Low drain-source ON-resistance: RDS (ON)= 1.0 Ω (typ.)
High forward transfer admittance:⎪Yfs⎪= 2.5 S (typ.)
Low leakage current: IDSS= 10 μA (max) (VDS= 500 V)
Enhancement-mode: Vth= 2.4 to 4.4 V (VDS= 10 V, ID= 1 mA)
**bsolute Maximum Ratings(Ta**=**25°C)**
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
500
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
7
Drain current
Pulse (t=1 ms)
(Note 1)
IDP
28
A
Drain power dissipation (Tc=25°C)
PD
100
W
Single pulse avalanche energy
(Note 2)
EAS
105
mJ
Avalanche current
IAR
7
A
Repetitive avalanche energy (Note 3)
EAR
10
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C|
Low drain-source ON-resistance: RDS (ON)= 1.0 Ω (typ.)
High forward transfer admittance:⎪Yfs⎪= 2.5 S (typ.)
Low leakage current: IDSS= 10 μA (max) (VDS= 500 V)
Enhancement-mode: Vth= 2.4 to 4.4 V (VDS= 10 V, ID= 1 mA)
**bsolute Maximum Ratings(Ta**=**25°C)**
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
500
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
7
Drain current
Pulse (t=1 ms)
(Note 1)
IDP
28
A
Drain power dissipation (Tc=25°C)
PD
100
W
Single pulse avalanche energy
(Note 2)
EAS
105
mJ
Avalanche current
IAR
7
A
Repetitive avalanche energy (Note 3)
EAR
10
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C|||||||Unit: mm|
|---|---|---|---|---|---|---|---|---|---|---|---|
||||||
0.76±0.12
1.14MAX
1.01MAX|||6.6±0.2||1.08±0.2||
|||||||||5.34± 0.13||||
|||||||||||||
|||||||||||6.1±0.12||
|||||||||||||
|||||||4MAX||||||
||||||||||229|||
|Characteristics||Symbol|Rating|Unit||±0.12||||||
|||||||||||||
|Drain-source voltage||VDSS|500|V||||||||
|||||||||||||
|Gate-source voltage||VGSS|±30|V||||1
3
2
1. GATE
2. DRAI
（HEAT
3. SOUR||||
|Drain current|DC
(Note 1)
Pulse (t=1 ms)
(Note 1)|ID|7|A||||||||
|||IDP|28|||||||||
|Drain power dissipation (Tc=25°C)||PD|100|W||||||||
|Single pulse avalanche energy
(Note 2)||EAS|105|mJ|JEDEC|||||⎯||
||||||JEITA|||||⎯||
|Avalanche current||IAR|7|A||||||||
||||||TOSHIBA|||||2-7K1A||
|Repetitive avalanche energy (Note 3)||EAR|10|mJ||||||||
||||||Weight : 0.36 g (typ.)|||||||
|Channel temperature||Tch|150|°C||||||||
|Storage temperature range||Tstg|−55 to 150|°C||||||||
- Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.)
- High forward transfer admittance: ⎪ Yfs ⎪ = 2.5 S (typ.)
- Low leakage current: IDSS = 10 μA (max) (VDS = 500 V)
- Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
## = **Absolute Maximum Ratings (Ta 25°C)**
- Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
## **Thermal Characteristics**
**==> picture [119 x 24] intentionally omitted <==**
**----- Start of picture text -----**
Internal Connection
**----- End of picture text -----**
|**hermal Characteristics**|Int|ernal Connecti||n|||
|---|---|---|---|---|---|---|
|Characteristics
Symbol
Max
Unit|||||||
|Thermal resistance, channel to case
Rth (ch-c)
1.25
°C/W|||||2||
|Thermal resistance, channel to ambient
Rth (ch-a)
125
°C/W|||||||
||||||||
|Note 1: Please use devices on conditions that the channel temperature is below 150°C.||1|||||
|Note 2: VDD= 90 V, Tch= 25°C (initial), L = 3.64 mH, RG= 25Ω, IAR= 7 A|||||||
|Note 3: Repetitive rating: pulse width limited by maximum channel temperature|||||||
|This transistor is an electrostatic sensitive device. Please handle with caution.|||||3||
Start of commercial production 2009-12
2013-11-01
1
TK7P50D
## **Electrical Characteristics (Ta** = **25°C)**
|**ectrical Characteristics (**|**ectrical Characteristics (**|**Ta**=**25°C)**||||||
|---|---|---|---|---|---|---|---|
|Characteristics||Symbol|Test Condition|Min|Typ.|Max|Unit|
|Gate leakage current||IGSS|VGS = ±30 V, VDS =0 V|⎯|⎯|±1|μA|
|Drain cut-off current||IDSS|VDS =500 V, VGS =0 V|⎯|⎯|10|μA|
|Drain-source breakdown voltage||V(BR) DSS|ID =10 mA, VGS =0 V|500|⎯|⎯|V|
|Gate threshold voltage||Vth|VDS =10 V, ID =1 mA|2.4|⎯|4.4|V|
|Drain-source ON-resistance||RDS (ON)|VGS =10 V, ID =3.5 A|⎯|1.0|1.22|Ω|
|Forward transfer admittance||⎪Yfs⎪|VDS =10 V, ID =3.5 A|0.7|2.5|⎯|S|
|Input capacitance||Ciss|VDS =25 V, VGS =0 V, f=1 MHz|⎯|600|⎯|pF|
|Reverse transfer capacitance||Crss||⎯|4|⎯||
|Output capacitance||Coss||⎯|70|⎯||
|Switching time|Rise time|tr|RL =
57Ω
0 V
10 V
VGS
VDD≈200 V
ID =3.5 A
VOUT
50Ω
Duty≤1%, tw =10μs|⎯|18|⎯|ns|
||Turn-on time|ton||⎯|40|⎯||
||Fall time|tf||⎯|8|⎯||
||Turn-off time|toff||⎯|55|⎯||
|Total gate charge||Qg|VDD≈400 V, VGS =10 V, ID =7 A|⎯|12|⎯|nC|
|Gate-source charge||Qgs||⎯|7|⎯||
|Gate-drain charge||Qgd||⎯|5|⎯||
## = **Source-Drain Ratings and Characteristics (Ta 25°C)**
|Characteristics|Symbol|Test Condition|Min|Typ.|Max|Unit|
|---|---|---|---|---|---|---|
|Continuous drain reverse current
(Note 1)|IDR|⎯|⎯|⎯|7|A|
|Pulse drain reverse current
(Note 1)|IDRP|⎯|⎯|⎯|28|A|
|Forward voltage (diode)|VDSF|IDR =7 A, VGS =0 V|⎯|⎯|−1.7|V|
|Reverse recovery time|trr|IDR =7 A, VGS =0 V,
dIDR/dt=100 A/μs|⎯|1200|⎯|ns|
|Reverse recovery charge|Qrr||⎯|7|⎯|μC|
## **Marking (Note 4)**
**==> picture [198 x 60] intentionally omitted <==**
**----- Start of picture text -----**
TK7P50D Part No. (or abbreviation code)
Lot No.
**----- End of picture text -----**
Note 4: * Weekly code: (Four digits)
Week of manufacture (01 for first week of year, continuing up to 52 or 53)
Year of manufacture (The last 2digits of the calendar year)
2013-11-01
2
TK7P50D
**==> picture [438 x 185] intentionally omitted <==**
**----- Start of picture text -----**
ID – VDS ID – VDS
5 10
COMMON SOURCE 10 8 7.25 10 COMMON SOURCE
Tc = 25°C Tc = 25°C
8
PULSE TEST PULSE TEST
4 7 8
/ Yea| VF | |Hee | | / 7.75
an Zee ||Yee
6.75 7.5
3 6
nn) | tl
7.25
2? Annee 6.5 if
2 || Zee 6.25 4 | eet ttt 7 |
7 yi | | © Aone 6.75 eee
6
6.5
1 2) AS e en 2 FASSpee
VGS = 5 .5V VGS = 6V
0 [AtYi | | | if} | | fit tT [if 0 pitt P| | | | | | | [| | ff |
0 2 4 6 8 10 0 10 20 30 40 50
DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V)
(A) (A)
D D
DRAIN CURRENT I DRAIN CURRENT I
**----- End of picture text -----**
**==> picture [446 x 423] intentionally omitted <==**
**----- Start of picture text -----**
ID – VGS VDS – VGS
10 12
COMMON SOURCE
VDS = 20 V ae ie TT oT [oT] COMMON SOURCE Tc = 25℃
8 PULSE TEST 10 PULSE TEST
pA Td
7
8
6 ian FFI
6
4
PEPE) 25 © 4 EERE 3.5
ee 2 PtP
2 100 2 ID = 1.8 A
pf fe f /| Tc = −55 °C HOI4 —
0 Saaee ae 0 SEE E-E-E-AC-4
0 2 4 6 8 10 0 4 8 12 16 20
GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VGS (V)
⎪Yfs⎪ – ID RDS (ON) – ID
10 10
COMMON SOURCE COMMON SOURCE
VDS = 10 V Tc = 25 ° C
PULSE TEST PULSE TEST
ae ae
Tc = −55 °C
1 attZilli 100 25 1 SEIEee Ll
VGS = 10, 15 V
er 24a eee a
A CCCeeCIE
0.1 a ill 0.1 ERT ELUTE
0.1 1 10 0.1 1 10 100
DRAIN CURRENT ID (A) DRAIN CURRENT ID (A)
(V)
(A) DS
D
DRAIN CURRENT I
DRAIN-SOURCE VOLTAGE V
)
Ω
(
(S)
⎪
fs
Y
⎪ DS (ON)
R
FORWARD TRANSFER ADMITTANCE DRAIN-SOURCE ON-RESISTANCE
**----- End of picture text -----**
2013-11-01
3
TK7P50D
**==> picture [468 x 664] intentionally omitted <==**
**----- Start of picture text -----**
RDS (ON) – Tc IDR – VDS
5 10
COMMON SOURCE COMMON SOURCE
VGS = 10 V Tc = 25 ° C
PULSE TEST PULSE TEST
4
3 PO 7 SE ERERERY SERRE
3.5 1
2 Pook = LT
ID = 1.8 A
1 10 5
>> _ acne HAE 3 1 VGS = 0,−1 V
0 CAEL ELEe een 0.1 1/2674 | pee
−80 −40 0 40 80 120 160 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4
CASE TEMPERATURE Tc (°C) DRAIN-SOURCE VOLTAGE VDS (V)
CAPACITANCE – VDS Vth – Tc
10000 5
4
1000 Ciss
3
100 SSI Coss PEPPERS
2
10 COMMON SOURCE
AT COMMON SOURCE VGS = 0 V Crss 1 I V DDS= 1 mA = 10 V aes
f = 1 MHz
PULSE TEST
Tc = 25°C
1 | Sr 0 | Eee
0.1 1 10 100 −80 −40 0 40 80 120 160
DRAIN-SOURCE VOLTAGE VDS (V) CASE TEMPERATURE Tc (°C)
DYNAMIC INPUT / OUTPUT
PD – Tc CHARACTERISTICS
160 500 20
VDS
400 200 16
120 FEES TL LLLLLLLL
— Pee VDD = 100 V
fi} 300 TO CCC aero 400 12
80 PINE tt Se e e Eey 6
N | | ft R e
200 FOIL 8
IN ~~ VGS AA COMMON SOURCE EL
ID = 7 A
40 aaaNeee 100 pf PULSE TEST Tc = 25°C 4
pt NU | >
0 P| |tt|pttINSING 0 Vm\\ne Y | IW 0
0 40 80 120 160 0 4 8 12 16 20
CASE TEMPERATURE Tc (°C) TOTAL GATE CHARGE Qg (nC)
)
Ω
( (A)
IDR
DS (ON)
R
DRAIN REVERSE CURRENT
DRAIN-SOURCE ON-RESISTANCE
(V)
th
V
CAPACITANCE C (pF)
GATE THRESHOLD VOLTAGE
(V) (V)
DS GS
(W)
D
P
DRAIN POWER DISSIPATION
DRAIN-SOURCE VOLTAGE V GATE-SOURCE VOLTAGE V
**----- End of picture text -----**
2013-11-01
4
TK7P50D
**==> picture [332 x 187] intentionally omitted <==**
**----- Start of picture text -----**
rth – tw
10
A
8
TP
PT [TTT] eee
1
es Duty=0.5 =S221 SS eee
PE a tt
a DR OO 0 8
0.2
nen ea PT TT TT
=e 0.1 PDM
0.1 TE|| 0.05 —SeS SINGLE PULSE LtTT t
aSere iti Tri Tri T
Fea 0.02 0.01 Duty Rth (ch-c) = t/T = 1.25 °C/W
0.01
10μ 100μ 1m 10m 100m 1 10
PULSE WIDTH tw (s)
th (ch-c)
/R
th (t)
IMPEDANCE r
NORMALIZED TRANSIENT THERMAL
**----- End of picture text -----**
**==> picture [456 x 314] intentionally omitted <==**
**----- Start of picture text -----**
SAFE OPERATING AREA EAS – Tch
100 150
NN ID max (pulsed) * aSS Acasei ee sll
120
ES HY
10 CTTPp ID max (continuous) TSS TT 100 μs *
aDNNnnS eeee 90
HTH AO 1 ms *
1 mall DC operation Uha
Tc = 25°C 60
Deee
a
30
0.1 COIN NTT
aa ee eee.
0
25 50 75 100 125 150
*: SINGLE NONREPETITIVE
0.01
PULSE Tc = 25°C oc ee CHANNEL TEMPEATURE (INITIAL)
CURVES MUST BE DERATED 2 nn are ee Lh at Tch(°C)
LINEARLY WITH INCREASE IN
TEMPERATURE.
0.001 ia BVDSS
1 10 100 1000 15 V
DRAIN-SOURCE VOLTAGE VDS (V) 0 V IAR
VDD VDS
TEST CIRCUIT WAVEFORM
RVDDG == 25 90 V, L Ω = 3.64 mH ΕAS = 21 ⋅L ⋅I2 ⋅ ⎛⎜ [⎜] ⎝ BVDSSBVDSS− VDD ⎞⎟ [⎟] ⎠
(A)
D (mJ)
AS
E
AVALANCHE ENERGY
DRAIN CURRENT I
VDSS max
**----- End of picture text -----**
2013-11-01
5
TK7P50D
## **RESTRICTIONS ON PRODUCT USE**
- Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice.
- This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
- Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. **TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS.**
- **PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT (** " **UNINTENDED USE** " **).** Except for specific applications as expressly stated in this document, Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. **IF YOU USE PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT.** For details, please contact your TOSHIBA sales representative.
- Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
- Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations.
- The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
- **ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.**
- Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
- Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. **TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.**
2013-11-01
6
## Links
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---
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