# Power MOSFET, N Channel, 600 V, 18 A, 0.13 ohm, DFN, Surface Mount
**URL**: https://novapart.co/products/TK130V60Z1,LQ(S/power-mosfet-n-channel-600-v-18-a-013-ohm-dfn
**SKU**: TK130V60Z1,LQ(S
**Manufacturer**: TOSHIBA
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.2400
**Stock**: 10+
**Lead Time**: 162 days (indicative)
## Specifications
| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 4Pins |
| Channel Type | N Channel |
| Product Range | DTMOSVI Series |
| Qualification | - |
| Power Dissipation | 150W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | DFN |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 18A |
| Drain Source On State Resistance | 0.13ohm |
| Gate Source Threshold Voltage Max | 4V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:4816463/)
TK130V60Z1
MOSFETs Silicon N-Channel MOS (DTMOS VI )
## TK130V60Z1
## 1. Applications
- Switching Power Supplies
## 2. Features
- (1) Low drain-source on-resistance: RDS(ON) = 0.108 Ω (typ.)
- (2) High-speed switching properties with the lower capacitance.
- (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.73 mA)
## 3. Packaging and Internal Circuit
1: Gate 2: Source 1 3, 4: Source 2 5: Drain (heatsink)
Notice: Only use source 1 pin for gate input signal return. Please make sure that the main current flows into the source 2 pin.
DFN8x8
## 4. Absolute Maximum Ratings (Note) (Ta = 25
unless otherwise specified)
Characteristics Symbol Rating Unit ~~es~~ Drain-source voltage VDSS 600 V ~~ooa~~ Gate-source voltage VGSS ±30 Drain current (DC) (Note 1) ID 18 A ~~a$f~~ Drain current (pulsed) (Note 1) IDP 72 ~~©~~ Power dissipation (Tc = 25 ) PD 150 W ~~a~~ Single-pulse avalanche energy (Note 2) EAS 242 mJ ~~a~~ Single-pulse avalanche current IAS 4.2 A ~~a~~ Reverse drain current (DC) (Note 1) IDR 18 ~~a~~ Reverse drain current (pulsed) (Note 1) IDRP 72 Channel temperature Tch 150 ~~a———————E~~ Storage temperature Tstg -55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Start of commercial production 2024-07
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TK130V60Z1
5. Thermal Characteristics
Characteristics Symbol Max Unit ~~ee CG~~ Channel-to-case thermal resistance Rth(ch-c) 0.833 /W Note 1: Ensure that the channel temperature does not exceed 150 c . Note 2: VDD = 90 V, Tch = 25 °C (initial), L = 24.3 mH, IAS = 4.2 A
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
## 6. Electrical Characteristics
## 6.1. Static Characteristics (Ta = 25
## unless otherwise specified)
Characteristics Symbol Test Condition Min Typ. Max Unit ~~eeee es~~ Gate leakage current IGSS VGS = ±30 V, VDS = 0 V ±1 µA ~~eea~~ Drain cut-off current IDSS VDS = 600 V, VGS = 0 V ~~ee el~~ 2 Drain-source breakdown voltage V(BR)DSS ID = 10 mA, VGS = 0 V 600 V ~~eG~~ Gate threshold voltage Vth ~~Ge~~ VDS = 10 V, ID = 0.73 mA 3 4 ~~es ee ee el~~ Drain-source on-resistance RDS(ON) VGS = 10 V, ID = 6 A 0.108 0.13 Ω ~~PO =~~
## 6.2. Dynamic Characteristics (Ta = 25
## unless otherwise specified)
|Characteristics
~~ee~~
~~ee~~|Symbol
~~ee~~
~~es~~|Test Condition
~~ee~~
~~es~~
~~|-~~|Min
~~ee~~
~~|- |~~|Typ.
~~ee~~
~~||~~|Max
~~ee~~
~~-|~~|Unit
~~ee~~|
|---|---|---|---|---|---|---|
|Input capacitance
~~ee~~
~~ee~~|Ciss
~~es~~
~~ee~~|VDS= 300 V, VGS= 0 V, f = 100 kHz
~~es~~
~~|-~~
~~|}~~
~~oe~~|~~|- |~~
~~|}-|~~|1620
~~||~~
~~|~~|~~-|~~
|pF|
|Reverse transfer capacitance
~~ee~~
~~ee~~|Crss
~~es ~~
~~ee~~||~~|- |~~
~~|}-|~~|2.3
~~| | ~~
~~||[-|~~|~~-|~~
~~|[-|~~||
|Output capacitance
~~ee~~|Coss
~~ee~~||~~|} - |~~|40
~~|~~|||
|Effective output capacitance
(energyrelated)
(Note 3)|Co(er)|VDS= 0 to 400 V, VGS= 0 V
~~oe~~||70|||
|Effective output capacitance
(time related)
(Note 4)|Co(tr)|||480|||
|Gate resistance
~~GO~~
~~ee~~|rg
~~GO~~|VDS= OPEN , f = 1 MHz
~~oe~~
~~GO~~
~~|-~~|~~GO~~
~~|-|~~|3.2
~~GO~~
~~|~~
~~|~~|~~GO~~
~~-|~~|Ω
~~GO~~|
|Switching time (rise time)
~~ee~~
~~ee~~|tr|See Figure 6.2.1
~~|-~~
~~|}-~~
~~|}~~
~~|-~~|~~|-|~~
~~|}-|~~|16
~~|~~
~~|~~
~~|~~|~~-|~~
|ns|
|Switching time (turn-on time)
~~ee~~
~~ee~~
~~ee~~|ton
~~ee~~||~~|- |~~
~~|}-|~~
~~|}-|~~|38
~~|~~
~~| ~~
~~||[-|~~
~~|~~|~~-|~~
~~|[-|~~
||
|Switching time (fall time)
~~ee~~
~~ee~~
~~ee~~
~~DR~~|tf
~~ee~~||~~|}- |~~
~~|}-|~~
~~|-|~~|5
~~||[-|~~
~~||[-|~~
~~|~~
~~|~~|~~|[-|~~
~~|[-|~~
~~-|~~||
|Switching time (turn-off time)
~~ee~~
~~ee~~
~~DR~~|toff
~~ee~~||~~|} - |~~
~~|-|~~|75
~~|[-|~~
~~||[-|~~
~~|~~
~~|~~
~~ee~~|~~|[-|~~
~~|[-|~~
~~-|~~
~~ee~~||
|MOSFET dv/dt ruggedness
~~ee~~
~~DR~~|dv/dt
~~GG~~|VDS ≤VDSS, ID ≤9 A
~~|-~~
~~GG~~|70
~~|-|~~
~~GG~~|~~|[-|~~
~~|~~
~~|~~
~~GG~~
~~ee~~|~~|[-|~~
~~-|~~
~~GG~~
~~ee~~|V/ns
~~GG~~|
Note 3: CO(er) is a fixed capacitance that gives the same stored energy as COSS while VDS is rising from 0V to 400V. Note 4: CO(tr) is a fixed capacitance that gives the same charging time as COSS while VDS is rising from 0V to 400V.
VDD ≈ 400 V VGS = 10 V/0 V ID = 9 A RL = 44 Ω RG = 10 Ω Duty ≤ 1 %, tw = 10 µs
Fig. 6.2.1 Switching Time Test Circuit
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TK130V60Z1
## 6.3. Gate Charge Characteristics (Ta = 25 °C unless otherwise specified)
|Characteristics|Symbol|Test Condition|Min|Typ.|Max|Unit|
|---|---|---|---|---|---|---|
|Total gate charge (gate-source plus
gate-drain)|Qg|VDD≈400 V, VGS= 10 V, ID= 18 A||28||nC|
|Gate-source charge 1|Qgs1|||9|||
|Gate-drain charge|Qgd|||8|||
## 6.4. Source-Drain Characteristics (Ta = 25 °C unless otherwise specified)
|Characteristics|Symbol|Test Condition|Min|Typ.|Max|Unit|
|---|---|---|---|---|---|---|
|Diode forward voltage|VDSF|IDR= 18 A, VGS= 0 V|||-1.7|V|
|Reverse recovery time|trr|VDD= 400 V,
IDR= 9 A, VGS= 0 V
-dIDR/dt = 100 A/µs||280||ns|
|Reverse recovery charge|Qrr|VDD= 400 V,
IDR= 9 A, VGS= 0 V
-dIDR/dt = 100 A/µs||2.9||µC|
|Peak reverse recovery current|Irr|||21||A|
|Diode dv/dt ruggedness|dv/dt|VDD ≤400 V, IDR ≤9 A, VGS= 0 V|40|||V/ns|
## 7. Marking
Fig. 7.1 Marking
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TK130V60Z1
## 8. Characteristics Curves (Note)
Fig. 8.1 ID - VDS
Fig. 8.3 ID - VGS
Fig. 8.5 VDSS - Ta
Fig. 8.2 ID - VDS
Fig. 8.4 VDS - VGS
Fig. 8.6 RDS(ON) - ID
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TK130V60Z1
Fig. 8.7 RDS(ON) - Ta
**==> picture [82 x 10] intentionally omitted <==**
**----- Start of picture text -----**
Fig. 8.9 C - VDS
**----- End of picture text -----**
Fig. 8.11 Dynamic Input/Output Characteristics
**==> picture [88 x 10] intentionally omitted <==**
**----- Start of picture text -----**
Fig. 8.8 IDR - VDS
**----- End of picture text -----**
**==> picture [86 x 10] intentionally omitted <==**
**----- Start of picture text -----**
Fig. 8.10 Vth - Ta
**----- End of picture text -----**
**==> picture [104 x 10] intentionally omitted <==**
**----- Start of picture text -----**
Fig. 8.12 EOSS - VDS
**----- End of picture text -----**
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TK130V60Z1
Fig. 8.13 rth - tw (Guaranteed Maximum)
Fig. 8.14 EAS - Tch (Guaranteed Maximum)
Fig. 8.16 Test Circuit/Waveform
**==> picture [110 x 24] intentionally omitted <==**
**----- Start of picture text -----**
Fig. 8.15 PD - Tc
(Guaranteed Maximum)
**----- End of picture text -----**
Fig. 8.17 ID - Tc (Guaranteed Maximum)
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TK130V60Z1
Fig. 8.18 Safe Operating Area (Guaranteed Maximum)
Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted.
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TK130V60Z1
## Package Dimensions
Unit: mm
Weight: 0.175 g (typ.)
Package Name(s) TOSHIBA: 2-8T1A Nickname: DFN8x8
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©2026 Toshiba Electronic Devices & Storage Corporation
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TK130V60Z1
## RESTRICTIONS ON PRODUCT USE
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https://toshiba.semicon-storage.com/
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---
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