# Bipolar (BJT) Single Transistor, General Purpose, PNP, 60 V, 6 A, 65 W, TO-220, Through Hole

![Product image](https://novapart.co/image/farnell:9294651/)

**URL**: https://novapart.co/products/TIP42A/bipolar-bjt-single-transistor-general-purpose-pnp
**SKU**: TIP42A
**Manufacturer**: MULTICOMP PRO
**Price**: €0.3030
**Stock**: 1000+
**Lead Time**: 176 days (indicative)

## Description

Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency ft:3MHz; Power Dissipation Pd:65W; DC Collector Current:-6A; DC Current Gain hFE:30hFE; Transistor Case Styl

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 65W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | PNP |
| Transition Frequency | 3MHz |
| Transistor Case Style | TO-220 |
| Dc Current Gain Hfe Min | 30hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 6A |
| Collector Emitter Voltage Max | 60V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:9294651/)

## **Power Transistor** 

## **Description:** 

Designed for use in general purpose power amplifier and switching applications. 

## **Features:** 

- Collector-emitter sustaining voltage-VCEO (sus) = 60V (Min.) 

- Collector-emitter saturation voltage-VCE (sat) = 1.5V (Max.) at IC = 6A 

- Current gain-bandwidth product fT = 3MHz (Min.) at IC = 500mA 

## **Maximum Ratings** 

|**Maximum Ratings**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**TIP41A**<br>**TIP42A**|**Unit**|
|Collector-Emitter Voltage|VCEO|60|V|
|Collector-Base Voltage|VCBO|||
|Emitter-Base Voltage|VEBO|5||
|Collector Current -Continuous<br>-Peak|IC|6<br>10|A|
|Base Current|IB|2||
|Total Power Dissipation at TC= 25°C<br>Derate above 25°C|PD|65<br>0.52|W<br>W/°C|
|Operation and Storage Junction Temperature Range|TJ, TSTG|-65 to +150|°C|



## **Thermal Characteristics** 

|**Thermal Characteristics**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Max.**|**Unit**|
|Thermal Resistance Junction to Case|Rθjc|1.92|°C/W|



Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro 

Page <1> 13/09/19 V1.0 

## **Power Transistor** 

## **Electrical Characteristics (TC = 25°C unless otherwise noted)** 

|||**Characteristic**|**Symbol**|**Min.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|**OFF Characteristics**|||||||
||Collector-Emitter Sustaining Voltage (1)||||||
||IC= 30mA, IB= 0|TIP41A|VCEO(sus)|60|-|V|
|||TIP42A|||||
||Collector Cut off Current||||||
||VCE= 30V, IB= 0|TIP41A|ICEO|-|0.7||
|||TIP42A|||||
||Collector Cut off Current<br>VCE= 60V, VEB= 0|TIP41A|ICES|-|0.4|mA|
|||TIP42A|||||
||Emitter Cut off Current<br>VEB= 5V, IC= 0||IEBO|-|1||
|**ON Characteristics (1)**|||||||
||DC Current Gain<br>IC= 0.3A, VCE= 4V<br>IC= 0.3A, VCE= 4V||hFE|30<br>15|75|-|
||Collector-Emitter Saturation Voltage<br>IC= 6A, IB= 600mA||VCE(sat)|-|1.5|V|
||Base-Emitter On Voltage<br>IC= 6A, VCE= 4V||VBE(on)|-|2||
|**Dynamic  Characteristics**|||||||
||Current Gain-Bandwidth Product (2)<br>IC= 500mA, VCE= 10V, fTEST= 1MHz||fT|3|-|MHz|
||Small Signal Current Gain<br>IC= 500mA, VCE= 10V, f = 1kHz||hFE|20|-|-|



(1) Pulse Test: Pulse width ≤300μs, Duty Cycle ≤2% 

(2) fT = hFE • fTEST 

## **Power Derating** 

**==> picture [10 x 127] intentionally omitted <==**

**----- Start of picture text -----**<br>
, Power Dissipation (Watts)<br>D<br>P<br>**----- End of picture text -----**<br>


**==> picture [89 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
TC, Temperature (°C)<br>**----- End of picture text -----**<br>


Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro 

13/09/19 V1.0 

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## **Power Transistor** 

**Switching Time Test Circuit** 

RB and RC Varied to Obtain Desired Current Levels D1 Must be Fast Recovery Type. eg: M8D5000 Used Above IB to 100mA MSD6100 Used Below IB to 100mA 

**==> picture [72 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
DC Current Gain<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
==nn ———-----——<br>so-eee——— Te || fF TTT s<br>0 ort<br>ott ee ee<br>qT ssc]| TTLLTet|<br>.<br>=. — _ ==...<br>see EE<br>O06 0.1 o2 03 0.5 1.0<br>IC, Collector Current (Amp)<br>, DC Current Gain<br>FE<br>h<br>**----- End of picture text -----**<br>


**Figure - 3 Turn-On Time** 

**==> picture [183 x 118] intentionally omitted <==**

**----- Start of picture text -----**<br>
RS<br>oo phe t+ at a<br>0.1 kh} — tent at Vee (OFF) =<br>0.05-=<br>PA<br>ooallt| | TIT<br>0.06 O17 oO2 5 1<br>IC, Collector Current (Amp)<br>t, Time (µs)<br>**----- End of picture text -----**<br>


## **Turn-off Time** 

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**----- Start of picture text -----**<br>
Se T———TT——T ee EEE<br>I — eet<br>0<br>ott TW Tee<br>S22 ee ee<br>o.ogsbbtht t+ t+ 1 EE<br>0.06 0.1 0.2 0.5 1<br>IC, Collector Current (Amp)<br>t, Time (µs)<br>**----- End of picture text -----**<br>


## **Active Region Safe Operating Area** 

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**----- Start of picture text -----**<br>
5.0}<br>a<br>aPT [iit,] Ud ee es NITa<br>NOS = 150°C “TN<br>05 ——Ss———Thermally~~ Bonding vineBreakclLimit — | TST<br> Limt |<br>02<br>Te = 25°C (Single Puls® lings al Tabata<br>0.1CH<br>5 10 20a ee 40<br>VCE, Collector−Emitter Voltage (Volts)<br>, Collector Current (Amp)<br>IC<br>**----- End of picture text -----**<br>


There are two limitation on the power ability of a transistor: average junction temperature and second breakdown safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than curves indicate. 

The data of curve is base on TJ (PK) = 150°C; TC is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ (PK) ≤150°C, at high case temperatures, thermal limitation will reduce the power that can be handled to less than the limitations imposed by second breakdown. 

Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro 

13/09/19 V1.0 

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## **Power Transistor** 

## **Collector Saturation Region** 

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**----- Start of picture text -----**<br>
1.2SEE<br>od tt TEU ot<br>a he<br>CE HRE<br>SSE ee<br>oL__| ere<br>IB, Base Current (mA)<br>, Collector Voltage (Volts)<br>CE<br>V<br>**----- End of picture text -----**<br>


**“ON” Voltage** 

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**----- Start of picture text -----**<br>
a8} expat lly =10<br>PTTL Vag at<br>Vcp = 4.0¥ | |<br>Doe a<br>IC, Collector Current (Amp)<br>Voltage (Volts)<br>**----- End of picture text -----**<br>


**Capacitances** 

**==> picture [179 x 135] intentionally omitted <==**

**----- Start of picture text -----**<br>
oomI>Pe<br>4G ir<br>Mey<br>0<br>oo LTT<br>VR, Reverse Voltage (Volts)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Collector Cut off Region** 

**==> picture [190 x 141] intentionally omitted <==**

**----- Start of picture text -----**<br>
a a a<br>= —— eo<br>2 +f —<br>04-03 -02 -01 0 Of 02 03 04<br>VBE, Base-emitter Voltage (Volts)<br>, Collector Current (μA)<br>IC<br>**----- End of picture text -----**<br>


Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro 

13/09/19 V1.0 

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## **Power Transistor** 

## **Pin Configuration:** 

1. Base 

2. Collector 

3. Emitter 

|**Dimensions**|**Min.**|**Max.**|
|---|---|---|
|A|14.68|15.31|
|B|9.78|10.42|
|C|5.01|6.52|
|D|13.06|14.62|
|E|3.57|4.07|
|F|2.42|3.66|
|G|1.12|1.36|
|H|0.72|0.96|
|I|4.22|4.98|
|J|1.14|1.38|
|K|2.2|2.97|
|L|0.33|0.55|
|M|2.48|2.98|
|O|3.7|3.9|



Dimensions : Millimetres 

4. Collector(Case) 

## **Part Number Table** 

|**Part Number Table**||
|---|---|
|**Description**|**Part Number**|
|Transistor, NPN, TO-220|TIP41A|
|Transistor, PNP, TO-220|TIP42A|



**Important Notice :** This data sheet and its contents (the “Information”) belong to the members of the AVNET group of companies (the “Group”) or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence. Multicomp Pro is the registered trademark of Premier Farnell Limited 2019. 

Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro 

13/09/19 V1.0 

Page <5> 



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- [Supplier page](https://es.farnell.com/multicomp-pro/tip42a/transistor-pnp-to-220/dp/9294651)
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