# Bipolar (BJT) Single Transistor, PNP, 100 V, 25 A, 125 W, TO-247, Through Hole ![Product image](https://novapart.co/image/farnell:2535670/) **URL**: https://novapart.co/products/TIP36CG/bipolar-bjt-single-transistor-pnp-100-v-25-a-125-w **SKU**: TIP36CG **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT **Price**: €1.5300 **Stock**: 50+ **Lead Time**: 2 days (indicative) ## Description Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-100V; Transition Frequency ft:3MHz; Power Dissipation Pd:125W; DC Collector Current:-25A; DC Current Gain hFE:15hFE; Tr ## Specifications | Parameter | Value | |---|---| | Msl | - | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 3Pins | | Product Range | TIPxxx | | Qualification | - | | Power Dissipation | 125W | | Transistor Mounting | Through Hole | | Transistor Polarity | PNP | | Transition Frequency | 3MHz | | Transistor Case Style | TO-247 | | Dc Current Gain Hfe Min | 15hFE | | Operating Temperature Max | 150°C | | Continuous Collector Current | 25A | | Collector Emitter Voltage Max | 100V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2535670/) ## TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) ## Complementary Silicon High-Power Transistors Designed for general−purpose power amplifier and switching applications. ## **Features** - 25 A Collector Current - Low Leakage Current − ## **http://onsemi.com** ## **25 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60−100 VOLTS, 125 WATTS** - ICEO = 1.0 mA @ 30 and 60 V - Excellent DC Gain − - hFE = 40 Typ @ 15 A - High Current Gain Bandwidth Product − ⎪hfe⎪ = 3.0 min @ IC = 1.0 A, f = 1.0 MHz - These are Pb−Free Devices* ## **MAXIMUM RATINGS** **TIP35A TIP35B TIP35C** ~~es~~ **Rating Symbol TIP36A TIP36B TIP36C Unit** ~~ee es~~ Collector − Emitter Voltage VCEO ~~es es~~ 60 80 100 Vdc Collector − Base Voltage VCB 60 80 100 Vdc Emitter − Base Voltage VEB 5.0 Vdc Collector Current IC Adc − Continuous 25 − Peak (Note 1) 40 ~~ee~~ Base Current − Continuous IB 5.0 Adc Total Power Dissipation PD 125 @ TC = 25 C W Derate above 25 C W/ C ~~eo. ff~~ Operating and Storage TJ, Tstg −65 to +150 C Junction Temperature Range ~~-___|~~ Unclamped Inductive Load ESB ~~| ___}~~ 90 mJ ~~—~~ **THERMAL CHARACTERISTICS Characteristic Symbol Max Unit** ~~a esee~~ Thermal Resistance, R JC 1.0 ° C/W Junction−to−Case Junction−To−Free−Air R JA 35.7 ° C/W Thermal Resistance ~~TET~~ **SOT−93 (TO−218) CASE 340D STYLE 1 TO−247 CASE 340L STYLE 3** **NOTE: Effective June 2012 this device will be available only in the TO−247 package. Reference FPCN# 16827.** ## **ORDERING INFORMATION** See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 10 ms, Duty Cycle 10%. - *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2012 **May, 2012 − Rev. 6** **TIP35/D** **TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP)** ## **MARKING DIAGRAMS** **==> picture [273 x 173] intentionally omitted <==** **----- Start of picture text -----**
TO−247
TO−218
TIP3xx
AYWWG AYWWG
TIP3xx
1 BASE 3 EMITTER 1 BASE 3 EMITTER
2 COLLECTOR
2 COLLECTOR
TIP3xx = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
**----- End of picture text -----**
## **ORDERING INFORMATION** |**ORDERING INFORMATION**||| |---|---|---| |**Device**|**Package**|**Shipping**| |TIP35AG|SOT−93 (TO−218)
(Pb−Free)|30 Units / Rail| |TIP35BG|SOT−93 (TO−218)
(Pb−Free)|30 Units / Rail| |TIP35CG|SOT−93 (TO−218)
(Pb−Free)|30 Units / Rail| |TIP36AG|SOT−93 (TO−218)
(Pb−Free)|30 Units / Rail| |TIP36BG|SOT−93 (TO−218)
(Pb−Free)|30 Units / Rail| |TIP36CG|SOT−93 (TO−218)
(Pb−Free)|30 Units / Rail| |TIP35AG|TO−247
(Pb−Free)|30 Units / Rail| |TIP35BG|TO−247
(Pb−Free)|30 Units / Rail| |TIP35CG|TO−247
(Pb−Free)|30 Units / Rail| |TIP36AG|TO−247
(Pb−Free)|30 Units / Rail| |TIP36BG|TO−247
(Pb−Free)|30 Units / Rail| |TIP36CG|TO−247
(Pb−Free)|30 Units / Rail| **http://onsemi.com** **2** ## **TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP)** |ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ
**ELECTRICAL CHARACTERISTICS**(TC= 25�C unless otherwise noted)
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
**Characteristic**
ÎÎÎÎÎ
ÎÎÎÎÎ
**Symbol**
ÎÎ**Î**
ÎÎ**Î**
**Min**
ÎÎ**Î**
ÎÎ**Î**
**Max**
ÎÎ
ÎÎ
**Unit**
ÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ
**OFF CHARACTERISTICS**
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Collector−Emitter Sustaining Voltage (Note 2)
(IC= 30 mA, IB= 0)
TIP35A, TIP36A
TIP35B, TIP36B
TIP35C, TIP36C
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
**ÎÎÎÎÎ**
VCEO(sus)
ÎÎ**Î**
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
60
80
100
ÎÎ**Î**
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
−
−
−
ÎÎ
ÎÎ
ÎÎ
**ÎÎ**
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Collector−Emitter Cutoff Current
(VCE= 30 V, IB= 0)
TIP35A, TIP36A
(VCE= 60 V, IB= 0)
TIP35B, TIP35C, TIP36B, TIP36C
ÎÎÎÎÎ
ÎÎÎÎÎ
**ÎÎÎÎÎ**
ICEO
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
−
−
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
1.0
1.0
ÎÎ
ÎÎ
**ÎÎ**
mA
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Collector−Emitter Cutoff Current
(VCE= Rated VCEO, VEB= 0)
**ÎÎÎÎÎ**
ICES
**ÎÎÎ**
−
**ÎÎÎ**
0.7
**ÎÎ**
mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Emitter−Base Cutoff Current
(VEB= 5.0 V, IC= 0)
ÎÎÎÎÎ
ÎÎÎÎÎ
IEBO
ÎÎ**Î**
ÎÎ**Î**
−
ÎÎ**Î**
ÎÎ**Î**
1.0
ÎÎ
ÎÎ
mA
ÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ
**ON CHARACTERISTICS**(Note 2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
DC Current Gain
(IC= 1.5 A, VCE= 4.0 V)
(IC= 15 A, VCE= 4.0 V)
ÎÎÎÎÎ
ÎÎÎÎÎ
**ÎÎÎÎÎ**
hFE
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
25
15
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
−
75
ÎÎ
ÎÎ
**ÎÎ**
−
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Collector−Emitter Saturation Voltage
(IC= 15 A, IB= 1.5 A)
(IC= 25 A, IB= 5.0 A)
ÎÎÎÎÎ
ÎÎÎÎÎ
**ÎÎÎÎÎ**
VCE(sat)
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
−
−
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
1.8
4.0
ÎÎ
ÎÎ
**ÎÎ**
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Base−Emitter On Voltage
(IC= 15 A, VCE= 4.0 V)
(IC= 25 A, VCE= 4.0 V)
ÎÎÎÎÎ
ÎÎÎÎÎ
VBE(on)
ÎÎ**Î**
ÎÎ**Î**
−
−
ÎÎ**Î**
ÎÎ**Î**
2.0
4.0
ÎÎ
ÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ
**DYNAMIC CHARACTERISTICS**
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Small−Signal Current Gain
(IC= 1.0 A, VCE= 10 V, f = 1.0 kHz)
ÎÎÎÎÎ
ÎÎÎÎÎ
**ÎÎÎÎÎ**
hfe
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
25
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
−
ÎÎ
ÎÎ
**ÎÎ**
−
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current−Gain — Bandwidth Product
(IC= 1.0 A, VCE= 10 V, f = 1.0 MHz)
ÎÎÎÎÎ
fT
ÎÎ**Î**
3.0
ÎÎ**Î**
−
ÎÎ
MHz|ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ
**ELECTRICAL CHARACTERISTICS**(TC= 25�C unless otherwise noted)
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
**Characteristic**
ÎÎÎÎÎ
ÎÎÎÎÎ
**Symbol**
ÎÎ**Î**
ÎÎ**Î**
**Min**
ÎÎ**Î**
ÎÎ**Î**
**Max**
ÎÎ
ÎÎ
**Unit**
ÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ
**OFF CHARACTERISTICS**
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Collector−Emitter Sustaining Voltage (Note 2)
(IC= 30 mA, IB= 0)
TIP35A, TIP36A
TIP35B, TIP36B
TIP35C, TIP36C
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
**ÎÎÎÎÎ**
VCEO(sus)
ÎÎ**Î**
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
60
80
100
ÎÎ**Î**
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
−
−
−
ÎÎ
ÎÎ
ÎÎ
**ÎÎ**
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Collector−Emitter Cutoff Current
(VCE= 30 V, IB= 0)
TIP35A, TIP36A
(VCE= 60 V, IB= 0)
TIP35B, TIP35C, TIP36B, TIP36C
ÎÎÎÎÎ
ÎÎÎÎÎ
**ÎÎÎÎÎ**
ICEO
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
−
−
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
1.0
1.0
ÎÎ
ÎÎ
**ÎÎ**
mA
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Collector−Emitter Cutoff Current
(VCE= Rated VCEO, VEB= 0)
**ÎÎÎÎÎ**
ICES
**ÎÎÎ**
−
**ÎÎÎ**
0.7
**ÎÎ**
mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Emitter−Base Cutoff Current
(VEB= 5.0 V, IC= 0)
ÎÎÎÎÎ
ÎÎÎÎÎ
IEBO
ÎÎ**Î**
ÎÎ**Î**
−
ÎÎ**Î**
ÎÎ**Î**
1.0
ÎÎ
ÎÎ
mA
ÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ
**ON CHARACTERISTICS**(Note 2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
DC Current Gain
(IC= 1.5 A, VCE= 4.0 V)
(IC= 15 A, VCE= 4.0 V)
ÎÎÎÎÎ
ÎÎÎÎÎ
**ÎÎÎÎÎ**
hFE
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
25
15
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
−
75
ÎÎ
ÎÎ
**ÎÎ**
−
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Collector−Emitter Saturation Voltage
(IC= 15 A, IB= 1.5 A)
(IC= 25 A, IB= 5.0 A)
ÎÎÎÎÎ
ÎÎÎÎÎ
**ÎÎÎÎÎ**
VCE(sat)
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
−
−
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
1.8
4.0
ÎÎ
ÎÎ
**ÎÎ**
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Base−Emitter On Voltage
(IC= 15 A, VCE= 4.0 V)
(IC= 25 A, VCE= 4.0 V)
ÎÎÎÎÎ
ÎÎÎÎÎ
VBE(on)
ÎÎ**Î**
ÎÎ**Î**
−
−
ÎÎ**Î**
ÎÎ**Î**
2.0
4.0
ÎÎ
ÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ
**DYNAMIC CHARACTERISTICS**
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Small−Signal Current Gain
(IC= 1.0 A, VCE= 10 V, f = 1.0 kHz)
ÎÎÎÎÎ
ÎÎÎÎÎ
**ÎÎÎÎÎ**
hfe
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
25
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
−
ÎÎ
ÎÎ
**ÎÎ**
−
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current−Gain — Bandwidth Product
(IC= 1.0 A, VCE= 10 V, f = 1.0 MHz)
ÎÎÎÎÎ
fT
ÎÎ**Î**
3.0
ÎÎ**Î**
−
ÎÎ
MHz|ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ
**ELECTRICAL CHARACTERISTICS**(TC= 25�C unless otherwise noted)
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
**Characteristic**
ÎÎÎÎÎ
ÎÎÎÎÎ
**Symbol**
ÎÎ**Î**
ÎÎ**Î**
**Min**
ÎÎ**Î**
ÎÎ**Î**
**Max**
ÎÎ
ÎÎ
**Unit**
ÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ
**OFF CHARACTERISTICS**
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Collector−Emitter Sustaining Voltage (Note 2)
(IC= 30 mA, IB= 0)
TIP35A, TIP36A
TIP35B, TIP36B
TIP35C, TIP36C
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
**ÎÎÎÎÎ**
VCEO(sus)
ÎÎ**Î**
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
60
80
100
ÎÎ**Î**
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
−
−
−
ÎÎ
ÎÎ
ÎÎ
**ÎÎ**
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Collector−Emitter Cutoff Current
(VCE= 30 V, IB= 0)
TIP35A, TIP36A
(VCE= 60 V, IB= 0)
TIP35B, TIP35C, TIP36B, TIP36C
ÎÎÎÎÎ
ÎÎÎÎÎ
**ÎÎÎÎÎ**
ICEO
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
−
−
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
1.0
1.0
ÎÎ
ÎÎ
**ÎÎ**
mA
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Collector−Emitter Cutoff Current
(VCE= Rated VCEO, VEB= 0)
**ÎÎÎÎÎ**
ICES
**ÎÎÎ**
−
**ÎÎÎ**
0.7
**ÎÎ**
mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Emitter−Base Cutoff Current
(VEB= 5.0 V, IC= 0)
ÎÎÎÎÎ
ÎÎÎÎÎ
IEBO
ÎÎ**Î**
ÎÎ**Î**
−
ÎÎ**Î**
ÎÎ**Î**
1.0
ÎÎ
ÎÎ
mA
ÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ
**ON CHARACTERISTICS**(Note 2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
DC Current Gain
(IC= 1.5 A, VCE= 4.0 V)
(IC= 15 A, VCE= 4.0 V)
ÎÎÎÎÎ
ÎÎÎÎÎ
**ÎÎÎÎÎ**
hFE
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
25
15
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
−
75
ÎÎ
ÎÎ
**ÎÎ**
−
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Collector−Emitter Saturation Voltage
(IC= 15 A, IB= 1.5 A)
(IC= 25 A, IB= 5.0 A)
ÎÎÎÎÎ
ÎÎÎÎÎ
**ÎÎÎÎÎ**
VCE(sat)
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
−
−
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
1.8
4.0
ÎÎ
ÎÎ
**ÎÎ**
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Base−Emitter On Voltage
(IC= 15 A, VCE= 4.0 V)
(IC= 25 A, VCE= 4.0 V)
ÎÎÎÎÎ
ÎÎÎÎÎ
VBE(on)
ÎÎ**Î**
ÎÎ**Î**
−
−
ÎÎ**Î**
ÎÎ**Î**
2.0
4.0
ÎÎ
ÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ
**DYNAMIC CHARACTERISTICS**
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Small−Signal Current Gain
(IC= 1.0 A, VCE= 10 V, f = 1.0 kHz)
ÎÎÎÎÎ
ÎÎÎÎÎ
**ÎÎÎÎÎ**
hfe
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
25
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
−
ÎÎ
ÎÎ
**ÎÎ**
−
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current−Gain — Bandwidth Product
(IC= 1.0 A, VCE= 10 V, f = 1.0 MHz)
ÎÎÎÎÎ
fT
ÎÎ**Î**
3.0
ÎÎ**Î**
−
ÎÎ
MHz|ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ
**ELECTRICAL CHARACTERISTICS**(TC= 25�C unless otherwise noted)
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
**Characteristic**
ÎÎÎÎÎ
ÎÎÎÎÎ
**Symbol**
ÎÎ**Î**
ÎÎ**Î**
**Min**
ÎÎ**Î**
ÎÎ**Î**
**Max**
ÎÎ
ÎÎ
**Unit**
ÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ
**OFF CHARACTERISTICS**
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Collector−Emitter Sustaining Voltage (Note 2)
(IC= 30 mA, IB= 0)
TIP35A, TIP36A
TIP35B, TIP36B
TIP35C, TIP36C
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
**ÎÎÎÎÎ**
VCEO(sus)
ÎÎ**Î**
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
60
80
100
ÎÎ**Î**
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
−
−
−
ÎÎ
ÎÎ
ÎÎ
**ÎÎ**
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Collector−Emitter Cutoff Current
(VCE= 30 V, IB= 0)
TIP35A, TIP36A
(VCE= 60 V, IB= 0)
TIP35B, TIP35C, TIP36B, TIP36C
ÎÎÎÎÎ
ÎÎÎÎÎ
**ÎÎÎÎÎ**
ICEO
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
−
−
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
1.0
1.0
ÎÎ
ÎÎ
**ÎÎ**
mA
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Collector−Emitter Cutoff Current
(VCE= Rated VCEO, VEB= 0)
**ÎÎÎÎÎ**
ICES
**ÎÎÎ**
−
**ÎÎÎ**
0.7
**ÎÎ**
mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Emitter−Base Cutoff Current
(VEB= 5.0 V, IC= 0)
ÎÎÎÎÎ
ÎÎÎÎÎ
IEBO
ÎÎ**Î**
ÎÎ**Î**
−
ÎÎ**Î**
ÎÎ**Î**
1.0
ÎÎ
ÎÎ
mA
ÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ
**ON CHARACTERISTICS**(Note 2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
DC Current Gain
(IC= 1.5 A, VCE= 4.0 V)
(IC= 15 A, VCE= 4.0 V)
ÎÎÎÎÎ
ÎÎÎÎÎ
**ÎÎÎÎÎ**
hFE
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
25
15
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
−
75
ÎÎ
ÎÎ
**ÎÎ**
−
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Collector−Emitter Saturation Voltage
(IC= 15 A, IB= 1.5 A)
(IC= 25 A, IB= 5.0 A)
ÎÎÎÎÎ
ÎÎÎÎÎ
**ÎÎÎÎÎ**
VCE(sat)
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
−
−
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
1.8
4.0
ÎÎ
ÎÎ
**ÎÎ**
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Base−Emitter On Voltage
(IC= 15 A, VCE= 4.0 V)
(IC= 25 A, VCE= 4.0 V)
ÎÎÎÎÎ
ÎÎÎÎÎ
VBE(on)
ÎÎ**Î**
ÎÎ**Î**
−
−
ÎÎ**Î**
ÎÎ**Î**
2.0
4.0
ÎÎ
ÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ
**DYNAMIC CHARACTERISTICS**
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Small−Signal Current Gain
(IC= 1.0 A, VCE= 10 V, f = 1.0 kHz)
ÎÎÎÎÎ
ÎÎÎÎÎ
**ÎÎÎÎÎ**
hfe
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
25
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
−
ÎÎ
ÎÎ
**ÎÎ**
−
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current−Gain — Bandwidth Product
(IC= 1.0 A, VCE= 10 V, f = 1.0 MHz)
ÎÎÎÎÎ
fT
ÎÎ**Î**
3.0
ÎÎ**Î**
−
ÎÎ
MHz|ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ
**ELECTRICAL CHARACTERISTICS**(TC= 25�C unless otherwise noted)
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
**Characteristic**
ÎÎÎÎÎ
ÎÎÎÎÎ
**Symbol**
ÎÎ**Î**
ÎÎ**Î**
**Min**
ÎÎ**Î**
ÎÎ**Î**
**Max**
ÎÎ
ÎÎ
**Unit**
ÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ
**OFF CHARACTERISTICS**
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Collector−Emitter Sustaining Voltage (Note 2)
(IC= 30 mA, IB= 0)
TIP35A, TIP36A
TIP35B, TIP36B
TIP35C, TIP36C
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
**ÎÎÎÎÎ**
VCEO(sus)
ÎÎ**Î**
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
60
80
100
ÎÎ**Î**
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
−
−
−
ÎÎ
ÎÎ
ÎÎ
**ÎÎ**
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Collector−Emitter Cutoff Current
(VCE= 30 V, IB= 0)
TIP35A, TIP36A
(VCE= 60 V, IB= 0)
TIP35B, TIP35C, TIP36B, TIP36C
ÎÎÎÎÎ
ÎÎÎÎÎ
**ÎÎÎÎÎ**
ICEO
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
−
−
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
1.0
1.0
ÎÎ
ÎÎ
**ÎÎ**
mA
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Collector−Emitter Cutoff Current
(VCE= Rated VCEO, VEB= 0)
**ÎÎÎÎÎ**
ICES
**ÎÎÎ**
−
**ÎÎÎ**
0.7
**ÎÎ**
mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Emitter−Base Cutoff Current
(VEB= 5.0 V, IC= 0)
ÎÎÎÎÎ
ÎÎÎÎÎ
IEBO
ÎÎ**Î**
ÎÎ**Î**
−
ÎÎ**Î**
ÎÎ**Î**
1.0
ÎÎ
ÎÎ
mA
ÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ
**ON CHARACTERISTICS**(Note 2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
DC Current Gain
(IC= 1.5 A, VCE= 4.0 V)
(IC= 15 A, VCE= 4.0 V)
ÎÎÎÎÎ
ÎÎÎÎÎ
**ÎÎÎÎÎ**
hFE
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
25
15
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
−
75
ÎÎ
ÎÎ
**ÎÎ**
−
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Collector−Emitter Saturation Voltage
(IC= 15 A, IB= 1.5 A)
(IC= 25 A, IB= 5.0 A)
ÎÎÎÎÎ
ÎÎÎÎÎ
**ÎÎÎÎÎ**
VCE(sat)
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
−
−
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
1.8
4.0
ÎÎ
ÎÎ
**ÎÎ**
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Base−Emitter On Voltage
(IC= 15 A, VCE= 4.0 V)
(IC= 25 A, VCE= 4.0 V)
ÎÎÎÎÎ
ÎÎÎÎÎ
VBE(on)
ÎÎ**Î**
ÎÎ**Î**
−
−
ÎÎ**Î**
ÎÎ**Î**
2.0
4.0
ÎÎ
ÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ
**DYNAMIC CHARACTERISTICS**
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Small−Signal Current Gain
(IC= 1.0 A, VCE= 10 V, f = 1.0 kHz)
ÎÎÎÎÎ
ÎÎÎÎÎ
**ÎÎÎÎÎ**
hfe
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
25
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
−
ÎÎ
ÎÎ
**ÎÎ**
−
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current−Gain — Bandwidth Product
(IC= 1.0 A, VCE= 10 V, f = 1.0 MHz)
ÎÎÎÎÎ
fT
ÎÎ**Î**
3.0
ÎÎ**Î**
−
ÎÎ
MHz|ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ
**ELECTRICAL CHARACTERISTICS**(TC= 25�C unless otherwise noted)
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
**Characteristic**
ÎÎÎÎÎ
ÎÎÎÎÎ
**Symbol**
ÎÎ**Î**
ÎÎ**Î**
**Min**
ÎÎ**Î**
ÎÎ**Î**
**Max**
ÎÎ
ÎÎ
**Unit**
ÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ
**OFF CHARACTERISTICS**
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Collector−Emitter Sustaining Voltage (Note 2)
(IC= 30 mA, IB= 0)
TIP35A, TIP36A
TIP35B, TIP36B
TIP35C, TIP36C
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
**ÎÎÎÎÎ**
VCEO(sus)
ÎÎ**Î**
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
60
80
100
ÎÎ**Î**
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
−
−
−
ÎÎ
ÎÎ
ÎÎ
**ÎÎ**
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Collector−Emitter Cutoff Current
(VCE= 30 V, IB= 0)
TIP35A, TIP36A
(VCE= 60 V, IB= 0)
TIP35B, TIP35C, TIP36B, TIP36C
ÎÎÎÎÎ
ÎÎÎÎÎ
**ÎÎÎÎÎ**
ICEO
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
−
−
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
1.0
1.0
ÎÎ
ÎÎ
**ÎÎ**
mA
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Collector−Emitter Cutoff Current
(VCE= Rated VCEO, VEB= 0)
**ÎÎÎÎÎ**
ICES
**ÎÎÎ**
−
**ÎÎÎ**
0.7
**ÎÎ**
mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Emitter−Base Cutoff Current
(VEB= 5.0 V, IC= 0)
ÎÎÎÎÎ
ÎÎÎÎÎ
IEBO
ÎÎ**Î**
ÎÎ**Î**
−
ÎÎ**Î**
ÎÎ**Î**
1.0
ÎÎ
ÎÎ
mA
ÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ
**ON CHARACTERISTICS**(Note 2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
DC Current Gain
(IC= 1.5 A, VCE= 4.0 V)
(IC= 15 A, VCE= 4.0 V)
ÎÎÎÎÎ
ÎÎÎÎÎ
**ÎÎÎÎÎ**
hFE
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
25
15
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
−
75
ÎÎ
ÎÎ
**ÎÎ**
−
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Collector−Emitter Saturation Voltage
(IC= 15 A, IB= 1.5 A)
(IC= 25 A, IB= 5.0 A)
ÎÎÎÎÎ
ÎÎÎÎÎ
**ÎÎÎÎÎ**
VCE(sat)
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
−
−
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
1.8
4.0
ÎÎ
ÎÎ
**ÎÎ**
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Base−Emitter On Voltage
(IC= 15 A, VCE= 4.0 V)
(IC= 25 A, VCE= 4.0 V)
ÎÎÎÎÎ
ÎÎÎÎÎ
VBE(on)
ÎÎ**Î**
ÎÎ**Î**
−
−
ÎÎ**Î**
ÎÎ**Î**
2.0
4.0
ÎÎ
ÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ
**DYNAMIC CHARACTERISTICS**
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Small−Signal Current Gain
(IC= 1.0 A, VCE= 10 V, f = 1.0 kHz)
ÎÎÎÎÎ
ÎÎÎÎÎ
**ÎÎÎÎÎ**
hfe
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
25
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
−
ÎÎ
ÎÎ
**ÎÎ**
−
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current−Gain — Bandwidth Product
(IC= 1.0 A, VCE= 10 V, f = 1.0 MHz)
ÎÎÎÎÎ
fT
ÎÎ**Î**
3.0
ÎÎ**Î**
−
ÎÎ
MHz| |---|---|---|---|---|---| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
**Characteristic**

|ÎÎÎ
**Symbol**


ÎÎÎ|Î**Î**
**Min**
ÎÎ|ÎÎ
**Max**
ÎÎ|ÎÎ
**Unit**
ÎÎ| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎ
**OFF CHARACTERISTICS**



||||| ||ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Collector−Emitter Sustaining Voltage (Note 2)
(IC= 30 mA, IB= 0)
TIP35A, TIP36A
TIP35B, TIP36B
TIP35C, TIP36C



|Î
Î

ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
**ÎÎÎ**
VCEO(sus)



|Î
Î
**Î**
Î
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
60
80
100|ÎÎ
ÎÎ**Î**
ÎÎ**Î**
**ÎÎ**
−
−
−|Î
ÎÎ
ÎÎ
**ÎÎ**
Vdc| ||ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Cutoff Current
(VCE= 30 V, IB= 0)
TIP35A, TIP36A
(VCE= 60 V, IB= 0)
TIP35B, TIP35C, TIP36B, TIP36C


|Î
Î

ÎÎÎÎ
ÎÎÎÎ

ICEO


|Î
Î

ÎÎ**Î**
ÎÎ**Î**

−
−|ÎÎ**Î**
ÎÎ**Î**

1.0
1.0|ÎÎ
ÎÎ

mA| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**

**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Collector−Emitter Cutoff Current
(VCE= Rated VCEO, VEB= 0)
|**Î**
**ÎÎÎÎ**

**Î**
**ÎÎÎÎ**
ICES
|**Î**
**ÎÎÎ**
**Î**
**ÎÎÎ**
−|**ÎÎÎ**

**ÎÎ**
0.7|**ÎÎ**

**ÎÎ**
mA| ||ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter−Base Cutoff Current
(VEB= 5.0 V, IC= 0)

|Î

ÎÎÎÎ

IEBO


|Î

ÎÎ**Î**

−
|ÎÎ**Î**

1.0
|ÎÎ

mA
| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
ÎÎÎÎÎ
ÎÎ**Î**
ÎÎ**Î**
ÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ

**ON CHARACTERISTICS**(Note 2)



||||| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
DC Current Gain
(IC= 1.5 A, VCE= 4.0 V)
(IC= 15 A, VCE= 4.0 V)


|ÎÎÎ
Î
**Î**
ÎÎÎ
ÎÎÎÎ
**ÎÎÎÎ**
hFE


|ÎÎÎ
Î
Î
**Î**
ÎÎ**Î**
ÎÎ**Î**
**ÎÎÎ**
25
15|ÎÎ



ÎÎ
ÎÎ**Î**
**ÎÎ**
−
75|ÎÎ



ÎÎ
ÎÎ
**ÎÎ**
−| ||ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Saturation Voltage
(IC= 15 A, IB= 1.5 A)
(IC= 25 A, IB= 5.0 A)


|Î
Î

ÎÎÎÎ
ÎÎÎÎ

VCE(sat)


|Î
Î

ÎÎ**Î**
ÎÎ**Î**

−
−|ÎÎ**Î**
ÎÎ**Î**

1.8
4.0|ÎÎ
ÎÎ

Vdc| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Base−Emitter On Voltage
(IC= 15 A, VCE= 4.0 V)
(IC= 25 A, VCE= 4.0 V)

|**Î**
**ÎÎÎÎ**

Î

ÎÎÎÎ
ÎÎÎ
VBE(on)


ÎÎÎ|**Î**
**ÎÎÎ**
Î
Î
ÎÎ**Î**
ÎÎ**Î**
−
−
ÎÎÎ|**ÎÎ**


ÎÎ**Î**
ÎÎ
2.0
4.0
ÎÎ|**ÎÎ**


ÎÎ
ÎÎ
Vdc
ÎÎ| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ
**DYNAMIC CHARACTERISTICS**
ÎÎÎÎÎ
ÎÎ**Î**
ÎÎ**Î**
ÎÎ||||| ||ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small−Signal Current Gain
(IC= 1.0 A, VCE= 10 V, f = 1.0 kHz)


|Î


ÎÎÎÎ

hfe


|Î


ÎÎ**Î**

25|ÎÎ**Î**

−|ÎÎ

−| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current−Gain — Bandwidth Product
(IC= 1.0 A, VCE= 10 V, f = 1.0 MHz)
|**Î**
**ÎÎÎÎ**

Î
ÎÎÎÎ
fT
|**Î**
**ÎÎÎ**
Î
ÎÎ**Î**
3.0|**ÎÎ**

ÎÎ**Î**
−|**ÎÎ**

ÎÎ
MHz| 2. Pulse Test: Pulse Width = 300 � s, Duty Cycle � 2.0%. **http://onsemi.com 3** **TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP)** **==> picture [237 x 170] intentionally omitted <==** **----- Start of picture text -----**
125
100
75
50
25
0
0 25 50 75 100 125 150 175
TC, CASE TEMPERATURE (°C)
PD, POWER DISSIPATION (WATTS)
**----- End of picture text -----**
**Figure 1. Power Derating** **==> picture [483 x 105] intentionally omitted <==** **----- Start of picture text -----**
VCC -�30 V VCC -�30 V
TURN−ON TIME TURN−OFF TIME
RL 3.0 RL 3.0
+�9.0 V
+�2.0 V TO SCOPE TO SCOPE
10 10
0 tr ≤ 20 ns 0 tr ≤ 20 ns
RB RB
20 nstr ≤ -11.0 V -11.0 V tr ≤ 20 ns
10 TO 100 �S 10 to 100 �s VBB +�4.0 V
DUTY CYCLE ≈ 2.0% DUTY CYCLE ≈ 2.0%
**----- End of picture text -----**
FOR CURVES OF FIGURES 3 & 4, RB & RL ARE VARIED. INPUT LEVELS ARE APPROXIMATELY AS SHOWN. FOR NPN, REVERSE ALL POLARITIES. **Figure 2. Switching Time Equivalent Test Circuits** **==> picture [239 x 171] intentionally omitted <==** **----- Start of picture text -----**
2.0
TJ = 25°C
1.0 IC/IB = 10
0.7 VCC = 30 V
0.5 VBE(off) = 2 V
0.3 tr
0.2
(PNP)
0.1 td (NPN)
0.07
0.05
0.03
0.02
0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30
IC, COLLECTOR CURRENT (AMPERES)
μ
t, TIME (��s)
**----- End of picture text -----**
**Figure 3. Turn−On Time** **http://onsemi.com** **4** **TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP)** **==> picture [239 x 170] intentionally omitted <==** **----- Start of picture text -----**
10
7.0 (PNP) TJ = 25°C
5.0 (NPN) VCC = 30 V
3.02.0 ts IICB1/I = IB = 10B2
1.0 ts
0.7
0.5 tf
0.3
0.2 tf
0.1
0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30
IC, COLLECTOR CURRENT (AMPERES)
μ
t, TIME (��s)
**----- End of picture text -----**
**Figure 4. Turn−Off Time** ## **FORWARD BIAS** There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 6 is based on TC = 25�C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC � 25�C. Second breakdown limitations do not derate the same as thermal limitations. ## **REVERSE BIAS** For inductive loads, high voltage and high current must be sustained simultaneously during turn−off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage−current conditions during reverse biased turn−off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 7 gives RBSOA characteristics. **==> picture [239 x 171] intentionally omitted <==** **----- Start of picture text -----**
1000
500
V CE = 4.0 V
200 TJ = 25°C
100
50
20
10
5.0 PNP
NPN
2.0
1.0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
IC, COLLECTOR CURRENT (AMPS)
hFE, DC CURRENT GAIN
**----- End of picture text -----**
**Figure 5. DC Current Gain** **==> picture [233 x 409] intentionally omitted <==** **----- Start of picture text -----**
100
50 300��s T C = 25°C
30 1.0�ms
20
10
10�ms
5.0
dc
2.0
SECONDARY BREAKDOWN
1.0 THERMAL LIMIT
BONDING WIRE LIMIT
0.5
0.3 TIP35A, 36A
0.2 TIP35B, 36B
TIP35C, 36C
0
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 6. Maximum Rated Forward Bias
Safe Operating Area
40
30 T J ≤ 100°C
25
20
TIP35C
15 TIP36C
TIP35B
10 TIP36B
TIP35A
5.0 TIP36A
0
0 10 20 30 40 50 60 70 80 90 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
**----- End of picture text -----**
**Figure 7. Maximum Rated Forward Bias Safe Operating Area** **http://onsemi.com** **5** **TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP)** ## **TEST CIRCUIT** **==> picture [441 x 261] intentionally omitted <==** **----- Start of picture text -----**
VCE MONITOR
L1
(SEE NOTE A)
RBB1
MJE180 TUT
INPUT 20
50 L2
(SEE NOTE A)
50 RBB2 = 100 -
VCC = 10 V
+ IC MONITOR
VBB2 = 0
-
VBB1 = 10 V RS = 0.1 �
+
**----- End of picture text -----**
## **VOLTAGE AND CURRENT WAVEFORMS** **==> picture [268 x 258] intentionally omitted <==** **----- Start of picture text -----**
tw = 6.0 ms
(SEE NOTE B)
5.0 V
INPUT
VOLTAGE
0
100 ms
0
COLLECTOR
CURRENT
-�3.0 A
0
-10 V
COLLECTOR
VOLTAGE
V(BR)CER
**----- End of picture text -----**
## **NOTES:** A. L1 and L2 are 10 mH, 0.11 � , Chicago Standard Transformer Corporation C−2688, or equivalent. B. Input pulse width is increased until ICM = −3.0 A. C. For NPN, reverse all polarities. **Figure 8. Inductive Load Switching** **http://onsemi.com** **6** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **DATE 01/03/2002** **SOT−93 (TO−218) CASE 340D−02 ISSUE E** **==> picture [430 x 303] intentionally omitted <==** **----- Start of picture text -----**
NOTES:
SCALE 1:1 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
C 2. CONTROLLING DIMENSION: MILLIMETER.
B Q E
MILLIMETERS INCHES
DIM MIN MAX MIN MAX
A --- 20.35 --- 0.801
B 14.70 15.20 0.579 0.598
U 4 C 4.70 4.90 0.185 0.193
A D 1.10 1.30 0.043 0.051
S L E 1.17 1.37 0.046 0.054
G 5.40 5.55 0.213 0.219
K 1 2 3 HJ 2.000.50 3.000.78 0.0790.020 0.0310.118
K 31.00 REF 1.220 REF
L --- 16.20 --- 0.638
Q 4.00 4.10 0.158 0.161
S 17.80 18.20 0.701 0.717
U 4.00 REF 0.157 REF
V 1.75 REF 0.069
J
D MARKING DIAGRAM
. H [i]
a V ic ===
G
oan =
STYLE 1: STYLE 2: AYWW
PIN 1. BASE PIN 1. ANODE
2. COLLECTOR 2. CATHODE xxxxx
3. EMITTER 3. ANODE
4. COLLECTOR 4. CATHODE
A = Assembly Location
Y = Year
WW = Work Week
xxxxx = Device Code
**----- End of picture text -----**
Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB42643B** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DESCRIPTION: SOT−93 PAGE 1 OF 1** ~~a~~ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [123 x 78] intentionally omitted <==** **TO−247** CASE 340L ISSUE G **==> picture [81 x 8] intentionally omitted <==** **----- Start of picture text -----**
DATE 06 OCT 2021
**----- End of picture text -----**
**SCALE 1:1** **==> picture [87 x 34] intentionally omitted <==** ## **GENERIC MARKING DIAGRAM*** **==> picture [452 x 238] intentionally omitted <==** **----- Start of picture text -----**
XXXXXXXXX
AYWWG
STYLE 1: STYLE 2: STYLE 3: STYLE 4: XXXXX = Specific Device Code
PIN 1. 2. GATEDRAIN PIN 1. 2. ANODECATHODE (S) PIN 1. 2. BASECOLLECTOR PIN 1. 2. GATECOLLECTOR A = Assembly Location
3. SOURCE 3. ANODE 2 3. EMITTER 3. EMITTER Y = Year
4. DRAIN 4. CATHODES (S) 4. COLLECTOR 4. COLLECTOR WW = Work Week
STYLE 5: STYLE 6: G = Pb−Free Package
PIN 1. CATHODE PIN 1. MAIN TERMINAL 1
2. 3. ANODEGATE 2. 3. GATEMAIN TERMINAL 2 *This information is generic. Please refer to
4. ANODE 4. MAIN TERMINAL 2 device data sheet for actual part marking.
**----- End of picture text -----**
*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ � ”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DOCUMENT NUMBER: 98ASB15080C DESCRIPTION: TO−247** **PAGE 1 OF 1** **onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2021 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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