# Bipolar (BJT) Single Transistor, NPN, 100 V, 25 A, 125 W, TO-3P, Through Hole

![Product image](https://novapart.co/image/farnell:2807345/)

**URL**: https://novapart.co/products/TIP35CP/bipolar-bjt-single-transistor-npn-100-v-25-a-125-w
**SKU**: TIP35CP
**Manufacturer**: STMICROELECTRONICS
**Price**: €1.2200
**Stock**: 100+
**Lead Time**: 274 days (indicative)

## Description

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Power Dissipation Pd:125W; DC Collector Current:25A; DC Current Gain hFE:10hFE; T; Available until stocks are exhausted

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (23-Jan-2024) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 125W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | NPN |
| Transition Frequency | 3MHz |
| Transistor Case Style | TO-3P |
| Dc Current Gain Hfe Min | 10hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 25A |
| Collector Emitter Voltage Max | 100V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2807345/)

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## **TIP35CP TIP36CP** 

## Complementary power transistors 

## **Features** 

. 

- Low collector-emitter saturation voltage 

- Complementary NPN-PNP transistors 

## **Applications** 

- General purpose 

- Audio amplifier 

## **Description** 

The devices are manufactured in planar technology with “base island” layout. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. 

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## **TO-3P** 

## **Figure 1. Internal schematic diagrams** 

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**Table 1. Device summary** 

|**Order code**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|TIP35CP|TIP35CP|TO-3P|Tube|
|TIP36CP|TIP36CP|||



September 2008 

1/9 

Rev 2 

_www.st.com_ 

**TIP35CP - TIP36CP** 

**Electrical ratings** 

## **1 Electrical ratings** 

## **Table 2. Absolute maximum ratings** 

|**Table 2.**|**Absolute maximum ratings**||||
|---|---|---|---|---|
|**Symbol**|**Parameter**||**Value**|**Unit**|
|||**NPN**|**TIP35CP**||
|||**PNP**|**TIP36CP**||
|VCBO|Collector-base voltage (IE= 0)||100|V|
|VCEO|Collector-emitter voltage (IB= 0)||100|V|
|VEBO|Emitter-base voltage (IC= 0)||5|V|
|IC|Collector current||25|A|
|ICM|Collector peak current (tP<  5 ms)||50|A|
|IB|Base current||5|A|
|Ptot|Total dissipation at Tcase= 25 °C||125|W|
|Tstg|Storage temperature||-65 to 150|°C|
|TJ|Max. operating junction temperature||150|°C|



For PNP type voltage and current values are negative. 

## **Table 3. Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rthj-case|Thermal resistance junction-case                           max|1|°C/W|



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**Electrical characteristics** 

## **2 Electrical characteristics** 

(Tcase = 25 °C; unless otherwise specified) 

## **Table 4. Electrical characteristics** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ICEO|Collector cut-off current<br>(IB= 0)|VCE= 60 V|||1|mA|
|IEBO|Emitter cut-off current<br>(IC= 0)|VEB= 5 V|||1|mA|
|ICES|Collector cut-off current<br>(VBE= 0)|VCE= 100 V|||0.7|mA|
|VCEO(sus)<br>(1)|Collector-emitter<br>sustaining voltage<br>(IB= 0)|IC= 30 mA|100|||V|
|VCE(sat)<br>(1)|Collector-emitter<br>saturation voltage|IC= 15 A__IB= 1.5 A<br>IC= 25 A_IB= 5 A|||1.8<br>4|V<br>V|
|VBE(on)<br>(1)|Base-emitter voltage|IC= 15 A__VCE= 4 V<br>IC= 25 A_VCE= 4 V|||2<br>4|V<br>V|
|hFE<br>(1)|DC current gain|IC= 1.5 A_VCE= 4 V<br>IC= 15 A__VCE= 4 V|25<br>10||50||
|fT|Transition frequency|IC= 1 A_VCE= 10 V<br>f = 1 MHz|3|||MHz|



1. Pulsed duration = 300 ms, duty cycle  ≥  1.5%. 

For PNP type voltage and current are negative. 

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**TIP35CP - TIP36CP** 

**Electrical characteristics** 

## **2.1 Electrical characteristic (curves)** 

**Figure 2. DC current gain for NPN type Figure 3. DC current gain for PNP type** 

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**Figure 4. DC current gain for NPN type Figure 5. DC current gain for PNP type** 

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**Figure 6. Collector-emitter saturation voltage for NPN type** 

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**Figure 7. Collector-emitter saturation voltage for PNP type** 

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**Electrical characteristics** 

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**----- Start of picture text -----**<br>
Figure 8. Base-emitter saturation  Figure 9. Base-emitter saturation<br>voltage for NPN type voltage for PNP type<br>**----- End of picture text -----**<br>


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**Figure 10. Base-emitter on voltage for NPN type** 

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**Figure 11. Base-emitter on voltage for PNP type** 

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**Package mechanical data** 

## **3 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at : _www.st.com_ 

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**TIP35CP - TIP36CP** 

**Package mechanical data** 

## **TO-3P Mechanical data** 

|**TO-3P Mechanical data**|**TO-3P Mechanical data**|**TO-3P Mechanical data**|**TO-3P Mechanical data**|
|---|---|---|---|
|||||
|||||
|**DIM.**|**mm.**<br>**MIN.**<br>**TYP**<br>**MAX.**|||
|||**TYP**|**MAX.**|
|A|4.6||5|
|A1|1.45|1.50|1.65|
|A2|1.20|1.40|1.60|
|b|0.80|1|1.20|
|b1|1.80||2.20|
|b2|2.80||3.20|
|c|0.55|0.60|0.75|
|D|19.70|19.90|20.10|
|D1||13.90||
|E|15.40||15.80|
|E1||13.60||
|E2||9.60||
|e|5.15|5.45|5.75|
|L|19.50|20|20.50|
|L1||3.50||
|L2|18.20|18.40|18.60|
|P|3.10||3.30|
|Q||5||
|Q1||3.80||
|||||



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**Revision history** 

## **4 Revision history** 

## **Table 5. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|21-Apr-2008|1|Initial release|
|23-Sep-2008|2|Added figures_2_,_3_,_4_,_5_,_6_,_7_,_8_,_9_,_10_,_11_.|



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