# TRANSISTOR, PNP, 100V, 3A, TO-220

![Product image](https://novapart.co/image/farnell:4575634/)

**URL**: https://novapart.co/products/TIP32C/transistor-pnp-100v-3a-to-220
**SKU**: TIP32C
**Manufacturer**: MULTICOMP PRO
**Price**: €0.1670
**Stock**: 1000+
**Lead Time**: 134 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | Multicomp Pro PNP Transistors |
| Qualification | - |
| Power Dissipation | 40W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | PNP |
| Transition Frequency | 3MHz |
| Transistor Case Style | TO-220 |
| Dc Current Gain Hfe Min | 10hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 3A |
| Collector Emitter Voltage Max | 100V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4575634/)

## TIP31, TIP32 

## Hi h Power Bi olar Transistors g p 

## **Features:** 

- Collector - emitter sustaining voltage - VCEO (sus) 

   - = 60 V (Minimum) - TIP31A, TIP32A 

   - = 100 V (Minimum) - TIP31C, TIP32C 

- Collector - emitter sustaining voltage - VCE (sat) = 1.2 V (Maximum) at IC = 3 A 

- Current gain - bandwidth product fT = 3 MHz (Minimum) at IC = 500 mA 

## **TO-220** 

- **Pin** 1. Base 

   2. Collector 

   3. Emitter 

   4. Collector (Case) 

|**Dimensions**|**Minimum**|**Maximum**||
|---|---|---|---|
|A<br>B<br>C|14.68<br>9.78<br>5.01|15.31<br>10.42<br>6.52|**NPN**<br>**PNP**<br>**TIP31A**<br>**TIP32A**<br>**TIP32C              TIP32C**|
|D|13.06|14.62|**3 Amperes**|
|E<br>F<br>G<br>H<br>I<br>J<br>K|3.57<br>2.42<br>1.12<br>0.72<br>4.22<br>1.14<br>2.2|4.07<br>3.66<br>1.36<br>0.96<br>4.98<br>1.38<br>2.97|**Complementary Silicon**<br>**Power Transistors**<br>**60 - 100 Volts**<br>**40 Watts**|
|L<br>M|0.33<br>2.48|0.55<br>2.98||
|O|3.7|3.9||



Dimensions : Millimetres 

## **Maximum Ratings** 

|**Maximum Ratings**|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**TIP31A**<br>**TIP32A**|**TIP31C**<br>**TIP32C**|**Unit**|
|Collector - emitter voltage|VCEO|60|100|V|
|Collector - base voltage|VCBO||||
|Emitter - base voltage|VEBO|5<br>OC||A|
|Collector current - continuous<br>- peak|IC|3<br>5|||
|Base current|IB|1|||
|Total power dissipation at tc = 25°C<br>derate above 25°C|PD|40<br>0.32||W<br>W/°C|
|Operating and storage junction temperature range|TJ, TSTG|-65 to +150||°C|



## **Thermal Characteristics** 

|**Characteristic**|**Symbol**|**Maximum**|**Unit**||
|---|---|---|---|---|
|Thermal resistance junction to case|Rθjc|3.125|°C/W||
|**www.element14.com**<br>**www.farnell.com**<br>**www.newark.com**<br>~~ee~~<br>~~Sr~~|||||



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## TIP31, TIP32 

## Hi h Power Bi olar Transistors g p 

**Figure - 1 Power Derating** 

**==> picture [90 x 10] intentionally omitted <==**

**----- Start of picture text -----**<br>
TC, Temperature (°C)<br>**----- End of picture text -----**<br>


## **Electrical Characteristics (TC = 25°C Unless Otherwise Noted)** 

|**Characteristic**|**Symbol**|**Minimum**|**Maximum**|**Unit**|
|---|---|---|---|---|
|**OFF Characteristics**|||||
|Collector - emitter sustaining voltage (1)<br>(IC = 30 mA, IB = 0)<br>TIP31A, TIP32A<br>TIP31C, TIP32C|VCEO (SUS)|60<br>100|-|V|
|Collector cut off current<br>(VCE = 30V, IB = 0)<br>TIP31A, TIP32A<br>(VCE = 60V, IB = 0)<br>TIP31C, TIP32C|ICEO|-|0.3|mA|
|Collector cut off current<br>(VCE = 60 V, VEB = 0)<br>TIP31A, TIP32A<br>(VCE = 100 V, VEB = 0)<br>TIP31C, TIP32C|ICES|-|0.2||
|Emitter cut off current<br>(VEB = 5 V, IC = 0)|IEBO|-|1||
|**ON Characteristics (1)**|||||
|DC current gain<br>(IC = 1 A, VCE = 4 V)<br>(IC = 3 A, VCE = 4 V)|hFE|25<br>15|-<br>50|-|
|Collector - emitter saturation voltage<br>(IC = 3 A, IB = 375 mA)|VCE (sat)|-|1.2|V|
|Base - emitter on voltage<br>(IC = 3 A, VCE = 4 V)|VBE (on)|-|1.8||
|**Dynamic Characteristics**|||||
|Current gain - bandwidth product (2)<br>(IC = 500 mA, VCE = 10 V, fTEST= 1 KHz)|fT|3|-|MHz|
|Small - signal current gain<br>(IC = 500 A, VCE = 10 V, f = 1 kHz)|hfe|20|-|-|



(1) Pulse Test : Pulse width ≤ 300 µs, duty cycle ≤ 2% 

(2) fT = hFE• fTEST 

**www.element14.com www.farnell.com www.newark.com** 

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## TIP31, TIP32 Hi h Power Bi olar Transistors g p 

**Figure - 2 Switching Time Equivalent Circuit** 

## **Figure - 3 Turn-On Time** 

**Figure - 4 DC Current Gain** 

**IC, Collector Current (Amperes)** 

## **Figure - 5 Turn-Off Time** 

ss | oR a sa} esPSus[a] st Atw Aoo a = * a ——}— | | pi tt | 20hi | ' 10 —+-—; iy ns es ees ee so. I eea 1. wee eeea a a a aos O08 ol b2 03 0 **IC, Collector Current (Amperes) Figure - 6 Active Region Safe Operating Area** bea ie 5.0 ++}+——-— : ara en ! TT ae 20 loa dc me m= 1.0 | ft | | === —— = ashF- =Second + ThetinallyBreakdownLimited atLiritedTeetSht | | ee Bending lire Lint L " — That, 320, 

**Figure - 6 Active Region Safe Operating Area** 

**IC, Collector Current (Amperes)** 

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than the curves indicate. 

The data of Figure - 6 curve is based on TJ (PK) = 150°C; TC is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ (PK) = 150°C, At high case temperatures, thermal limitation will reduce the power that can be handled to values less than the limitations imposed by second breakdown 

**==> picture [159 x 10] intentionally omitted <==**

**----- Start of picture text -----**<br>
VCE, Collector Emitter Voltage (Volts)<br>**----- End of picture text -----**<br>


**www.element14.com www.farnell.com www.newark.com** 

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## TIP31, TIP32 

## Hi h Power Bi olar Transistors g p 

## **Figure - 7 Collector Saturation Region** ee ee TRLLA bE7 Ant 7 PTH sea TELL eee] Lu Ut ELT “TI PATELSHEP| EE 7 CICLO MOTTE: MALE ane Sat io zo Su 10 mw 50 410 200 **IB Base Current (mA) Figure - 9 “ON” Voltage** ~~a~~ oe TT| | i | tICen phanneet oma “peaee=sall lp =10 eee Baal Tt TT wT ere | Vee ace “208 

**==> picture [135 x 10] intentionally omitted <==**

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IC, Collector Current (Amperes)<br>**----- End of picture text -----**<br>


**==> picture [9 x 85] intentionally omitted <==**

**----- Start of picture text -----**<br>
C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**==> picture [11 x 107] intentionally omitted <==**

**----- Start of picture text -----**<br>
Collector Current (µA)<br>IC,<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Figure - 8 Capacitances<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
VCE, Reverse Volatage (Volts)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Figure - 10 Collector Cut-off Region<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
VBE, Base Emitter Voltage (Volts)<br>**----- End of picture text -----**<br>


## **Part Number Table** 

|**Part Number Table**|||
|---|---|---|
|**Description**|**Type**|**Part Number**|
|High Power Bipolar Transistor|NPN|TIP31A|
|High Power Bipolar Transistor||TIP31C|
|High Power Bipolar Transistor|PNP|TIP32A|
|High Power Bipolar Transistor||TIP32C|



**Important Notice :** This data sheet and its contents (the "Information") belong to the members of the Premier Farnell group of companies (the "Group") or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. Multicomp is the registered trademark of the Group. © Premier Farnell plc 2011. 

**www.element14.com www.farnell.com www.newark.com** 

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## Links

- [View this product on Novapart](https://novapart.co/products/TIP32C/transistor-pnp-100v-3a-to-220)
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- [Supplier page](https://es.farnell.com/multicomp-pro/tip32c/transistor-pnp-100v-3a-to-220/dp/4575634)
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