# Bipolar (BJT) Single Transistor, General Purpose, NPN, 100 V, 1 A, 30 W, TO-220, Through Hole
**URL**: https://novapart.co/products/TIP29C/bipolar-bjt-single-transistor-general-purpose-npn
**SKU**: TIP29C
**Manufacturer**: MULTICOMP PRO
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.6610
**Stock**: 10+
## Specifications
| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Power Dissipation | 30W |
| Dc Current Gain Hfe | 15hFE |
| Transistor Mounting | Through Hole |
| Transistor Polarity | NPN |
| Transition Frequency | 3MHz |
| Transistor Case Style | TO-220 |
| Dc Current Gain Hfe Min | 15hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 1A |
| Collector Emitter Voltage Max | 100V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:9294317/)
## **High Power Bipolar Transistors**
## **NPN TIP29A TIP29C**
## **Features**
- Collector-Emitter sustaining voltage - Vceo (sus) = 60V (Minimum) - TIP29A
- = 100V (Minimum) - TIP29C
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**----- Start of picture text -----**
1A
Complementary Silicon
Power Transistors
60 - 100V
30W
TO-220
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- Collector-Emitter saturation voltage - Vce (sat) = 0.7V (Maximum) at Ic = 1A
- Current gain-bandwidth product ft = 3MHz (Minimum) at Ic = 200mA
## **Maximum Ratings**
|**Maximum Ratings**|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**TIP29A**|**TIP29C**|**Unit**|
|Collector-Emitter Voltage|Vceo|60|100|V|
|Collector-Base Voltage|Vcbo||||
|Emitter-Base Voltage|Vebo|5|||
|Collector Current - Continuous
- Peak|Ic|1
3||A|
|Base Current|Ib|0.4|||
|Total Power Dissipation at Tc= 25°C
Derate above 25°C|Pd|30
0.24||W
W / °C|
|Operatingand Storage Junction Temperature Range|tj, tstg|-65 to +150||°C|
## **Thermal Characteristics**
|**Thermal Characteristics**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Max.**|**Unit**|
|Thermal Resistance Junction to Case|Rθjc|4.167|°C / W|
## **Power Derating**
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oe
Tc, Temperature (°C)
, Power Dissipation (W)
d
P
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Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro
02/04/20 V1.0
Page <1>
## **High Power Bipolar Transistors**
## **Electrical Characteristics (Ta = 25°C unless otherwise specified)**
|**Parameter**|**Symbol**|**Min.**|**Max.**|**Unit**|
|---|---|---|---|---|
|**OFF Characteristics**|||||
|Collector - Emitter Breakdown Voltage (Note 1)|||||
|(Ic= 30mA, Ib= 0) TIP29A|Vceo (sus)|60|-|V|
|TIP29C||100|||
|Collector Cut-off Current|||||
|Vce= 30V, Ib= 0 TIP29A|Iceo|-|0.3||
|Vce= 60V, Ib= 0 TIP29C|||0.3||
|Collector Cut-off Current
Vce= 60V, Veb= 0 TIP29A|Ices||0.2|mA|
|Vce= 100V, Veb= 0 TIP29C|||0.2||
|Emitter Cut-off Current
(Veb= 5V, Ic= 0)|Iebo|-|1||
|**ON Characteristics**(Note 1)|||||
|DC Current Gain|||||
|(Ic= 0.2A, Vce= 4V)|hfe|40||-|
|(Ic= 1A, Vce= 4V)||15|75||
|Collector - Emitter Saturation Voltage
(Ic= 1A, Ib= 125mA)|Vce(sat)|-|0.7|V|
|Base - Emitter On Voltage
(Ic= 1A, Vce= 4V)|Vbe(on)|-|1.3||
|**Dynamic Characteristics**|||||
|Current Gain-Bandwidth Product (2)
(Ic= 200mA, Vce= 10V, f = 1MHz)|ft|3|-|MHz|
|Small-Signal Current Gain
(Ic= 200mA, Vce= 10V, f = 1kHz)|hfe|20|-|-|
(1) Pulse Test: Pulse Width ≤300μs, Duty Cycle ≤2%
(2) ft = | hFE | ° fTest
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Turn - On Time
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## **Switching Time Equivalent Circuit**
**==> picture [170 x 120] intentionally omitted <==**
**----- Start of picture text -----**
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O41 Oni
FF la @ Veneer
aa SS SE AE A OS
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a ONS A A OS Os OS
TEE
oot LITT tf ETI
0.03 0.1 0.3 1.0
Ic, Collector Current (A)
t, Time (μs)
**----- End of picture text -----**
**Rb and Rc Varied to Obtain Desired Current Levels**
Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro
02/04/20 V1.0
Page <2>
## **High Power Bipolar Transistors**
## **DC Current Gain**
**Ic, Collector Current (A)**
## **Turn-Off Time**
**Ic, Collector Current (A)**
## **Active Region Safe Operating Area**
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown safe operating area curves indicate Ic - Vce limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than the curves indicate
The data of beside curve is based on Tj(Pk) = 150°C; Tc is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% provided Tj(Pk) = 150°C. At high case temperatures, thermal limitation will reduce the power that can be handled to values less than the limitations imposed by second breakdown
**Vce, Collector Emitter Voltage (V)**
Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro
02/04/20 V1.0
Page <3>
## **High Power Bipolar Transistors**
## **Diagram**
|**Dim.**|**Min.**|**Max.**||**Dim.**|**Min.**|**Max.**|
|---|---|---|---|---|---|---|
|A|14.68|15.31||H|0.72|0.96|
|B|9.78|10.42||I|4.22|4.98|
|C|5.01|6.52||J|1.14|1.38|
|D|13.06|14.62||K|2.2|2.97|
|E|3.57|4.07||L|0.33|0.55|
|F|2.42|3.66||M|2.48|2.98|
|G|1.12|1.36||O|3.7|3.9|
**Pin Configuration:**
Dimensions : Millimetres
1. Base
2. Collector
3. Emitter
4. Collector (Case)
## **Part Number Table**
|**Part Number Table**||
|---|---|
|**Description**|**Part Number**|
|Power Transistor, NPN, 60V, TO-220|TIP29A|
|Power Transistor, NPN, 100V, TO-220|TIP29C|
**Important Notice :** This data sheet and its contents (the “Information”) belong to the members of the AVNET group of companies (the “Group”) or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence. Multicomp Pro is the registered trademark of Premier Farnell Limited 2019.
Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro
02/04/20 V1.0
Page <4>
## Links
- [View this product on Novapart](https://novapart.co/products/TIP29C/bipolar-bjt-single-transistor-general-purpose-npn)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/multicomp-pro/tip29c/transistor-npn-to-220/dp/9294317)
---
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